JPS63247388A - Semiconductor photocatalyst device - Google Patents
Semiconductor photocatalyst deviceInfo
- Publication number
- JPS63247388A JPS63247388A JP62077411A JP7741187A JPS63247388A JP S63247388 A JPS63247388 A JP S63247388A JP 62077411 A JP62077411 A JP 62077411A JP 7741187 A JP7741187 A JP 7741187A JP S63247388 A JPS63247388 A JP S63247388A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- films
- thickness
- semiconductor photocatalyst
- thin metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000011941 photocatalyst Substances 0.000 title abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims description 8
- 230000001699 photocatalysis Effects 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 5
- 238000007740 vapor deposition Methods 0.000 abstract description 4
- 239000012212 insulator Substances 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 229910052742 iron Inorganic materials 0.000 abstract description 2
- 229910052707 ruthenium Inorganic materials 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 description 18
- 229910052739 hydrogen Inorganic materials 0.000 description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 6
- 239000010419 fine particle Substances 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
Landscapes
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電気分解装置に係り、特に光と半導体微粒子と
を用い水を分解する半導体光触媒装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electrolyzer, and more particularly to a semiconductor photocatalyst device that decomposes water using light and semiconductor fine particles.
光と半導体微粒子を用いて水を酸素と水素に分解する技
術は広く知られている。公知例としては。The technology of decomposing water into oxygen and hydrogen using light and semiconductor particles is widely known. As a known example.
たとえば、ジャーナル オブ フィジカル ケミストリ
第８５巻（１９８１年）５９２頁から５９４頁まで（
Ｔｈｅ Ｊｏｕｒｎａｌ ｏｆ ＰｈｙｓｉｃａｌＣｈ
ｅａ＋１ｓｔｒｙｅＶｏＱ、８５（１９８１）ｐ ５９
２〜５９４）あるいは同雑誌の第８９巻（１９８５年）
１９０２頁から１９０５頁（Ｖｏｗ、８５ （１９８
５）ｐ１９０２から１９０５）などがある、以下、この
技術を説明する。第２図は半導体微粒子１とその中のエ
ネルギーバンドを模式的に示したものである。３は伝導
体、４は価電子帯、５はバンドギャップである。この粉
状の半導体を水中に分散し、光６を当てると、電子７と
正孔８の対が光励起される。電子と正孔は半導体と水の
界面まで拡散し。For example, Journal of Physical Chemistry Volume 85 (1981) pp. 592-594 (
The Journal of Physical Ch.
ea+1strye VoQ, 85 (1981) p 59
2-594) or Volume 89 of the same magazine (1985)
pp. 1902-1905 (Vow, 85 (198
5) pages 1902 to 1905), etc. This technique will be explained below. FIG. 2 schematically shows the semiconductor fine particles 1 and the energy bands therein. 3 is a conductor, 4 is a valence band, and 5 is a band gap. When this powdered semiconductor is dispersed in water and exposed to light 6, pairs of electrons 7 and holes 8 are photoexcited. Electrons and holes diffuse to the interface between the semiconductor and water.
そこで、電子は水を還元し水素を、正孔は水を酸化して
酸素を作る。このようにして得られる水素はエネルギー
として使われる。また、半導体の分解を防ぐために半導
体表面に金属薄膜をつけることも知られている。この技
術は、水と光から無公害でエネルギーを得られるので、
大きな脚光を浴びている。Electrons reduce water to produce hydrogen, and holes oxidize water to produce oxygen. The hydrogen obtained in this way is used as energy. It is also known to apply a thin metal film to the surface of a semiconductor to prevent it from decomposing. This technology allows energy to be obtained from water and light without any pollution.
is in the spotlight.
この技術において、半導体微粒子上に金属薄膜を設ける
と、その厚さにより光が半導体にとどく前に吸収され変
換効率が悪くなる。そこで、金属薄膜の厚さを制御した
り、半導体の一部分のみに膜をつけることが必要となる
。しかし、上記従来技術のように半導体の粉を用いてい
たのでは、これは困難である。In this technique, when a metal thin film is provided on semiconductor particles, light is absorbed before reaching the semiconductor due to its thickness, resulting in poor conversion efficiency. Therefore, it is necessary to control the thickness of the metal thin film or to apply the film only to a portion of the semiconductor. However, this is difficult if semiconductor powder is used as in the prior art described above.
本発明の目的は、金属薄膜の厚さ、形の制御が容易な技
術を提供することにある。An object of the present invention is to provide a technique that allows easy control of the thickness and shape of a metal thin film.
上記目的は、半導体光触媒装置を絶縁物基板上にマスク
等を用いて、互いに孤立した半導体領域のパターンを作
る構造にしたうえで、その上にさらに金属膜をマスクを
用いて蒸着等により作成することで達成される。The above purpose is to construct a semiconductor photocatalytic device using a mask or the like on an insulating substrate to form a pattern of mutually isolated semiconductor regions, and then to create a metal film thereon by vapor deposition or the like using a mask. This is achieved by
絶縁物基板上に半導体パターンを作ることにより、半導
体装置、大きさ、形が容易に制御できる。従って、次に
金属膜をつけるときに同様にマスク等を用いれば、金属
膜を任意の形、面積でつけることができる。また厚さの
制御を、たとえば金属を蒸着する時間、温度を変えるこ
とで可能になる。By creating a semiconductor pattern on an insulating substrate, the size and shape of the semiconductor device can be easily controlled. Therefore, if a mask or the like is used similarly when applying a metal film next time, the metal film can be applied in any desired shape and area. Furthermore, the thickness can be controlled by, for example, changing the time and temperature at which the metal is deposited.
以下１本発明の実施例を図により説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は、絶縁物基板２の上に、半導体微粒子１とその
上に金属薄膜９を設けた、半導体光触媒装置である。（
ａ）はその上面図、（ｂ）は断面図である。半導体の種
類は、Ｓｉｃ、ＧａＡｓ。FIG. 1 shows a semiconductor photocatalytic device in which semiconductor fine particles 1 and a metal thin film 9 are provided on an insulating substrate 2. (
(a) is a top view thereof, and (b) is a cross-sectional view. The types of semiconductors are Sic and GaAs.
ＣｄＳ、Ｃｄ’ｓ、Ｔｉｅｚ、ＭｏＳ２．Ｆｅ２０ｓ＋
Ｉ ｎ２０＋ｓ、ＷＯａ、ＣｄＯなとである。厚さ大き
さは通常、数μｍ以下が良い。絶縁物基板２の材質は、
ガラス、セラミック等で、これらの絶縁物基板２を何枚
も重ねて使用できるように、透光性の物質が良い。金属
薄膜９は、Ｐ ｔＨＡ ｕ ｙ Ａ ｇ ｐＲｈ、Ｒｕ
、ｓｎ、Ｎｉ、Ｆｅなどで、厚さは数百Å以下が良い、
半導体、金属膜の製作はマスクを用いて基板上に蒸着あ
るいは化学反応やプラズマを利用して形成する。この装
置の機能、および動作原理は、従来の半導体の粉を用い
たものと同じである。しかし、半導体の粉では、その寸
法、形状などの制御が困難で従って、再現性良く同じも
のができない。一方、本発明によれば１寸法、形状は任
意に制御でき、かつ、同性能のものがいくつでもできる
。CdS, Cd's, Tiez, MoS2. Fe20s+
In20+s, WOa, and CdO. The thickness is usually several micrometers or less. The material of the insulating substrate 2 is
A translucent material such as glass or ceramic is preferable so that many of these insulating substrates 2 can be stacked and used. The metal thin film 9 is made of P tHA u y A g pRh, Ru
, sn, Ni, Fe, etc., and the thickness should preferably be several hundred Å or less.
Semiconductor and metal films are manufactured by vapor deposition on a substrate using a mask, or by using chemical reactions or plasma. The function and operating principle of this device is the same as that using conventional semiconductor powder. However, with semiconductor powder, it is difficult to control its dimensions, shape, etc., and therefore it is not possible to produce the same product with good reproducibility. On the other hand, according to the present invention, one dimension and shape can be controlled arbitrarily, and any number of products with the same performance can be produced.
第３図は別の実施例である。金属薄膜９は半導体微粒子
１の全面につけず、一部に設けたものである。金属部の
形状はこの形に必らないがこの構造では、半導体微粒子
１に直接光が当たるので効率が良くなる。FIG. 3 shows another embodiment. The metal thin film 9 is not applied to the entire surface of the semiconductor fine particles 1, but is provided to a part of the semiconductor particles 1. Although the shape of the metal part does not necessarily have to be this shape, with this structure, the semiconductor fine particles 1 are directly irradiated with light, so efficiency is improved.
第４図は、以上の実施例を用いた全体の装置構成を示す
ものである。透明窓１０とタンク１１からなる容器に水
あるいはそれにＮ ａ ＣＱ等の電解質を加えた溶液１
２が入っている。１，２．９から成る半導体光触媒装置
は溶液中に沈められる。FIG. 4 shows the overall device configuration using the above embodiment. A solution 1 in which water or an electrolyte such as Na CQ is added to a container consisting of a transparent window 10 and a tank 11
2 is included. A semiconductor photocatalytic device consisting of 1, 2, and 9 is submerged in the solution.
光６が照射されると前述の原理により、水は酸素と水素
に分解される。この装置ではさらに酸素と水素を分離す
るために、水素分離膜１３と真空ポンプ１４が設けられ
ている。水素分離膜１３はポリイミド、ボスエステル等
から成る水素だけを透過するもので、真空ポンプ１４に
より水素発生側の反対側を減圧することによりパイプ１
５から水素がとり出せる。また本装置において、水素分
離膜の代わりに、水素吸蔵合金を置いて水素を貯えるよ
うにしてもよい、水素吸蔵合金の例としては、ミツシュ
メタルＮ１ＡＱ （セリウム族希土類元素混合物、ニッ
ケル、アルミニウム合金）がある。When the light 6 is irradiated, water is decomposed into oxygen and hydrogen according to the above-mentioned principle. This device is further provided with a hydrogen separation membrane 13 and a vacuum pump 14 to separate oxygen and hydrogen. The hydrogen separation membrane 13 is made of polyimide, boss ester, etc. and allows only hydrogen to pass therethrough.The hydrogen separation membrane 13 is made of polyimide, boss ester, etc. and allows only hydrogen to pass therethrough.
Hydrogen can be extracted from 5. In addition, in this device, a hydrogen storage alloy may be placed in place of the hydrogen separation membrane to store hydrogen. Examples of hydrogen storage alloys include Mitsushmetal N1AQ (cerium group rare earth element mixture, nickel, aluminum alloy). be.
この水素分離膜あるいは水素吸蔵合金を用いる手法は光
触媒として従来の半導体粉を用いる場合でも、もちろん
有効である。また本装置で分解する溶液は水には限らず
アルコール等を分解できる。Of course, this method of using a hydrogen separation membrane or a hydrogen storage alloy is also effective when using conventional semiconductor powder as a photocatalyst. Furthermore, the solution decomposed by this device is not limited to water, but can also decompose alcohol, etc.
また、同様な半導体光触媒は、ガラス、セラミック、あ
るいはポリエチレン等高分子膜上に、半導体粉と金属の
ペーストを印刷することでも作れる。A similar semiconductor photocatalyst can also be made by printing a paste of semiconductor powder and metal onto a polymer film such as glass, ceramic, or polyethylene.
本発明によれば、効率のよい半導体光触媒が再現性良く
実現できる。According to the present invention, an efficient semiconductor photocatalyst can be realized with good reproducibility.
第１図、第３図は本発明の実施例になる触媒の上面図と
断面図、第２図は原理説明図、第４図は本発明の実施例
になる水分解装置の全体構成を示す横断面図である。
１・・・半導体微粒子、２・・・絶縁物基板、３・・・
伝導帯、４・・・価電子帯、５・・・バンドギャップ、
６・・・光、７・・・電子、８・・・正孔、９・・・金
属薄膜、１ｏ・・・透明窓。
１１・・・タンク、１２・・・溶液、１３・・・水素分
離膜、１４・・・真空ポンプ、１５・・・パイプ。
Ｔ１図
＜ａ＞
＄２図Figures 1 and 3 are a top view and a sectional view of a catalyst that is an embodiment of the present invention, Figure 2 is a diagram explaining the principle, and Figure 4 is an overall configuration of a water splitting apparatus that is an embodiment of the present invention. FIG. 1... Semiconductor fine particles, 2... Insulator substrate, 3...
Conduction band, 4... Valence band, 5... Band gap,
6...Light, 7...Electron, 8...Hole, 9...Metal thin film, 1o...Transparent window. 11...Tank, 12...Solution, 13...Hydrogen separation membrane, 14...Vacuum pump, 15...Pipe. T1 figure <a> $2 figure
Claims (1)
に孤立した半導体領域から成る半導体光触媒装置におい
て、半導体領域の全面あるいは一部に金属薄膜を設けた
ことを特徴とする半導体光触媒装置。1. A semiconductor photocatalytic device comprising a solution and semiconductor regions isolated from each other provided on an insulating substrate contained therein, characterized in that a metal thin film is provided on the entire surface or a part of the semiconductor region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62077411A JPS63247388A (en) | 1987-04-01 | 1987-04-01 | Semiconductor photocatalyst device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62077411A JPS63247388A (en) | 1987-04-01 | 1987-04-01 | Semiconductor photocatalyst device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63247388A true JPS63247388A (en) | 1988-10-14 |
Family
ID=13633186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62077411A Pending JPS63247388A (en) | 1987-04-01 | 1987-04-01 | Semiconductor photocatalyst device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63247388A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8414758B2 (en) | 2011-03-09 | 2013-04-09 | Panasonic Corporation | Method for reducing carbon dioxide |
| JP2015196869A (en) * | 2014-03-31 | 2015-11-09 | イムラ・ジャパン株式会社 | electrode |
-
1987
- 1987-04-01 JP JP62077411A patent/JPS63247388A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8414758B2 (en) | 2011-03-09 | 2013-04-09 | Panasonic Corporation | Method for reducing carbon dioxide |
| JP2015196869A (en) * | 2014-03-31 | 2015-11-09 | イムラ・ジャパン株式会社 | electrode |
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