JPS63247351A - Manufacture of silicon compound-coated resin body - Google Patents

Abstract

PURPOSE:To allow a thick silicon-compound film to adhere firmly to a resin body in a superior state, by introducing vapor into a vacuum tank evacuated to a specific pressure so that a specific partial pressure is reached and then heating silicon monoxide at the time of vacuum-depositing silicon oxide on a resin body. CONSTITUTION:The inside of a vacuum tank 1 is evacuated to <=1X10<-5>Torr and then maintained so that vapor partial pressure or nitrogen-gas partial pressure becomes 5X10<-5>-5X10<-4>Torr by introducing vapor or a nitrogen gas. A copper hearth 3 is heated in the above state to evaporate silicon monoxide 4 and DC voltage is impressed on an ionization electrode 5 to ionize a part of the silicon monoxide 4 by means of arc discharge, and then negative DC voltage is impressed on a substrate so as to coat a resin body 7 with the silicon monoxide 4. In this way, the thick film of silicon compound can be formed on the resin body 7 with firm adhesion without causing cracking and peeling.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for producing a silicon compound-covered ffl resin body. It is conventionally known to form, for example, VACUUM Mo1.14.385-392 (1
964) and Journal of Applied P
hysicsVoL 34.347~351 (196
2) describes that a silicon monoxide film is formed by vacuum deposition.

Generally, when the surface of a resin body is coated with ceramics, the thicker the ceramic layer, the worse the surface hardness, wear resistance, scratch resistance, etc. This method has the drawback that residual stress becomes large, cracks occur, film peeling occurs, and a continuous film cannot be obtained.

[Problem that the invention seeks to solve]

The object of the present invention is to solve the above-mentioned drawbacks, and to make the thick silicon compound coating strong and strong without cracking or peeling! It is an object of the present invention to provide a method for manufacturing a resin body.

[Means for solving problems]

Hereinafter, the method for manufacturing a silicon compound-coated resin body of the present invention will be explained with reference to page 9.

FIG. 1 is a schematic diagram showing an example of a device used in the present invention. In the figure, reference numeral 1 denotes a vacuum chamber, which is evacuated to a high vacuum by an exhaust device 1 (not shown) connected to an exhaust port 2. Inside the vacuum chamber 1 is provided a copper hearth 3 equipped with a heating and cooling device to which silicon monoxide 4 is supplied. An ionization electrode 5 connected to an electrode is installed above the copper hearth 3 so as to be able to ionize the evaporated silicon monoxide. Furthermore, a substrate 6 for fixing the resin body 7 is provided further above the ionization electrode 5, and the substrate 6 is connected to the electrode. Further, 8 is a gas introduction port, which is designed to allow introduction of water vapor or nitrogen gas.

In the present invention, if the degree of decompression in the vacuum chamber l is low, silicon monoxide turns into silicon dioxide due to residual oxygen during vacuum evaporation or ion plating of silicon monoxide, reducing adhesion. The pressure is reduced to below 10-5) liters, and then steam or nitrogen gas is introduced.

If the amount of water vapor or nitrogen gas introduced increases, the reaction product between silicon monoxide and water vapor or nitrogen will increase, and the residual stress in the silicon compound layer will increase, making cracks more likely to occur. Nitrogen partial pressure is 5×1O ~
Introduce the solution to a concentration of 5xlO torr.

In the present invention, the copper hearth 3 is heated in the reduced pressure state to evaporate the silicon monoxide 4 supplied to the copper hearth 3 and form a silicon compound layer on the resin body 7.

At this time, in order to coat with the ion plating method, it is sufficient to apply a DC voltage to the ionization electrode 5 to generate a back discharge and ionize a part of the evaporated silicon monoxide. You may apply a DC voltage of .

Note that this applied voltage causes a rise in the temperature of the substrate 6, so it is determined appropriately depending on the heat resistance of the resin of the resin body 7.

Further, in order to coat the film by vacuum evaporation, the ionization electrode 5 and the substrate 7 may be kept in a grounded state, and the other steps may be carried out in the same manner as in the ion plating method.

〔Effect of the invention〕

Structure of the present invention! tFi is as described above, and the inside of the vacuum chamber is 1
After reducing the pressure to below x 10-'), the water vapor or nitrogen gas is heated to a water vapor partial pressure or nitrogen partial pressure of 5X10' to 5X1.
Since the resin body is coated with gulyric monoxide by vacuum evaporation or ion plating in that state, most of the coated silicon compound layer is It is formed by a reaction product of guyric monoxide, some silicon monoxide, and water vapor or nitrogen.
Residual stress is small, and even if the film thickness is increased, cracks will not occur or film peeling will occur. Therefore, it is possible to obtain a resin body to which a thick silicon compound layer is firmly adhered, and the resulting resin body Fi has excellent surface hardness, abrasion resistance, scratch resistance, etc., and is suitable for use in plastic lenses, window glasses, etc. , and other surface-hardened plastic products.

〔Example〕

Next, the present invention will be explained in detail.

Examples 1-11. Comparative Examples 1 to 6 A polyether sulfon film was installed as the 411 fat body 7 in the apparatus II shown in FIG. 1, and after reducing the pressure to 8×10 Torr, the gases shown in Table 1 were introduced, The inlet gas partial pressure was maintained as shown in Table 1. A DC voltage of 40 V is applied to the ionizing electrode 5, the substrate 6 is grounded, silicon monoxide is evaporated by heating the copper hearth 3, and polyether salt coated with a silicon compound layer is formed by the ion plating method. I got Huon film. The thickness of the silicon compound layer was measured and shown in Table 1.

In addition, surface hardness test (Knoop hardness, measured with a load of 25 g) and heat cycle test (-20C% 1 hour holding and 1
After repeating 00σ for 1 hour 100 times, the surface was observed using an optical microscope, and the results are shown in Table 1. In addition, the soup hardness of polyether sulfone film is 20KII/
It was d.

Table 1

[Brief explanation of drawings]

Figure eE1 is a schematic diagram showing an example of an apparatus used in the manufacturing method of the present invention.

Claims (1)

[Claims] 1. When coating silicon monoxide on a resin body by vacuum evaporation method or ion plating method, the inside of the vacuum chamber is
After reducing the pressure to 10^-^5 torr or less, water vapor or nitrogen gas is introduced to reduce the water vapor partial pressure or nitrogen partial pressure to 5 x 10^-^.
1. A method for producing a silicon compound-coated resin body, which comprises heating silicon monoxide while maintaining the temperature at 5 to 5×10^-^4 Torr to coat the resin body.