JPS63245365A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63245365A JPS63245365A JP62077792A JP7779287A JPS63245365A JP S63245365 A JPS63245365 A JP S63245365A JP 62077792 A JP62077792 A JP 62077792A JP 7779287 A JP7779287 A JP 7779287A JP S63245365 A JPS63245365 A JP S63245365A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polished
- aluminum
- alcohol
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000005498 polishing Methods 0.000 claims abstract description 96
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000007788 liquid Substances 0.000 claims abstract description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004744 fabric Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract 3
- 235000019441 ethanol Nutrition 0.000 description 11
- 239000006061 abrasive grain Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000005360 phosphosilicate glass Substances 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 235000021167 banquet Nutrition 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical compound C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、半導体基板上に設けられたアルミニウムが含
まれてなる被研磨材の研磨工程において、その研磨レー
トを向上するためにアルコールが含まれている研磨液を
使用して研摩を行なうものである。[Detailed Description of the Invention] [Summary] The present invention provides a polishing process containing alcohol in order to improve the polishing rate in a polishing process of a material to be polished, which is provided on a semiconductor substrate and includes aluminum. Polishing is performed using a liquid.
本発明は、半導体装置の製造方法、特にそのアルミニウ
ムが含まれてなる被研磨材の研磨方法に関する。The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for polishing a material to be polished containing aluminum.
従来の技術を第４図を参照して説明する。第４図はコン
タクトホールにアルミニウム合金を埋込む構造の多層配
線形成方法を工程順に示す断面図である。A conventional technique will be explained with reference to FIG. FIG. 4 is a cross-sectional view showing, in order of steps, a method for forming a multilayer interconnection structure in which contact holes are filled with aluminum alloy.
この多層配線形成方法は、先ず第４図（Ａ）に示す様に
、絶縁膜８上に第１の配線ＩＯをパターンニングし、そ
の表面に例えばＰＳＧ（燐ケイ酸ガラス）からなる眉間
絶縁膜９を形成した後、その所定箇所に、コンタクトホ
ール９ａを開口する。In this multilayer wiring formation method, first, as shown in FIG. 4(A), a first wiring IO is patterned on an insulating film 8, and a glabella insulating film made of, for example, PSG (phosphosilicate glass) is formed on the surface of the first wiring IO. After forming the contact hole 9a, a contact hole 9a is opened at a predetermined location.
次に第４図（Ｂ）を示す様に、例えばスパッタ成長によ
って、アルミニウム合金（例えばアルミニウム・銅合金
）からなる埋込み金属１１を表面に形成する。Next, as shown in FIG. 4(B), a buried metal 11 made of an aluminum alloy (for example, an aluminum-copper alloy) is formed on the surface by, for example, sputter growth.
次に、第４図（Ｃ）に示す様に、通常の研磨を行ない、
コンタクトホール９ａ内に、埋込み金属１１を埋込む。Next, as shown in FIG. 4(C), normal polishing is performed,
A buried metal 11 is buried in the contact hole 9a.
この場合、その研磨液には、例えば酸化シリコンからな
る砥粒と、純水との混合液を使用する。In this case, the polishing liquid is a mixture of abrasive grains made of silicon oxide and pure water, for example.
最後に第４図（Ｄ）に示す様に、埋込み金属１１に接続
される第２の配線１２を形成するものである。Finally, as shown in FIG. 4(D), a second wiring 12 connected to the buried metal 11 is formed.
上記した様に研磨によって、アルミニウムが含まれる金
属をコンタクトホールに埋込む場合、その研磨液には例
えば酸化シリコン（Ｓｉｎｇ）からなる砥粒と、純水（
ＨｚＯ）との混合液が使用されている。これは、研摩後
の洗浄工程において、純水のみによる洗浄を可能とし、
他の薬品によるアルミニウムの汚染を防止するためであ
る。When filling a contact hole with a metal containing aluminum by polishing as described above, the polishing solution contains abrasive grains made of silicon oxide (Sing) and pure water (
HzO) is used. This enables cleaning using only pure water in the cleaning process after polishing.
This is to prevent aluminum from being contaminated by other chemicals.
ところが上記の研磨中において、発生するアルミニウム
からなる研磨屑は、同様にアルミニウムからなる被研磨
材表面に付着し易く、その結果この研磨屑を除去しなが
ら、研磨を進めなければならないため、研磨レートが著
しく低下するという問題点を有していた。However, during the above-mentioned polishing, polishing debris made of aluminum that is generated tends to adhere to the surface of the workpiece being polished, which is also made of aluminum, and as a result, polishing must proceed while removing these polishing debris, which reduces the polishing rate. There was a problem in that the value decreased significantly.
更に、上記した様に研磨液は、その主成分が純水（Ｈ２
ｏ）であるため、粘性が低く、これを使用して研磨を行
なうと、研磨布と被研磨材との間隔が狭くなるために、
被研磨材の温度が上昇し、その表面に例えばＡｎ （Ｏ
Ｈ）３からなるアルミニウム変質層が形成され易い。ま
た、研磨布と被研磨材との間隔が狭いことから低粒が研
磨面に埋込まれ易く、特に前記したコンタクトホールへ
の埋込みの際において、コンタクトホール内に砥粒が埋
込まれると、埋込み金属１１と第２と配線１２とのコン
タクト抵抗が高くなるという問題点を有していた。Furthermore, as mentioned above, the main component of the polishing liquid is pure water (H2
o), its viscosity is low, and when it is used for polishing, the distance between the polishing cloth and the material to be polished becomes narrower.
The temperature of the material to be polished increases, and for example, An (O
H) Aluminum deterioration layer consisting of 3 is likely to be formed. In addition, since the distance between the polishing cloth and the material to be polished is narrow, it is easy for small grains to be embedded in the polishing surface, and especially when the abrasive grains are embedded in the contact hole as described above, There was a problem in that the contact resistance between the buried metal 11 and the second wiring 12 became high.
本発明は上記した問題点に鑑み、アルミニウムが含まれ
る被研磨材を研磨する際において、研磨レートを向上さ
せ、アルミニウム変質層の形成及び多層配線におけるコ
ンタクト抵抗の増加を防止するものであり、それは、所
定量のアルコールが添加されてなる研摩液を使用して研
磨を行なうことによって実現するものである。In view of the above-mentioned problems, the present invention improves the polishing rate when polishing a material containing aluminum, and prevents the formation of an aluminum deterioration layer and the increase in contact resistance in multilayer wiring. This is achieved by polishing using a polishing liquid to which a predetermined amount of alcohol is added.
〔作用］
本発明によると、アルミニウムを研磨する際、所定量の
アルコールを研磨液中に添加するため、研磨液の粘性が
増加し、その結果、研磨布と被研摩材との間隔が広くな
る。そのため上記した問題点が解決される。[Function] According to the present invention, when polishing aluminum, a predetermined amount of alcohol is added to the polishing liquid, so the viscosity of the polishing liquid increases, and as a result, the distance between the polishing cloth and the material to be polished becomes wider. . Therefore, the above-mentioned problems are solved.
以下、本発明によるアルミニウム研磨方法の一実施例を
第１図を参照して説明する。本実施例は、前記第４図に
おいて説明した多層配線の形成において、アルミニウム
合金からなる埋込み金属１１の研磨に本発明を適用した
ものである。An embodiment of the aluminum polishing method according to the present invention will be described below with reference to FIG. In this embodiment, the present invention is applied to the polishing of the embedded metal 11 made of aluminum alloy in the formation of the multilayer wiring explained in FIG. 4.
第１図は、通常の研磨装置であり、研磨布２が設けられ
た研磨板１を矢印ａ方向に回転させ、研磨液５を供給し
つつ、真空チャック４に固定したウェハ３を当接、揺動
させることによって、ウェハ３表面の被研磨材を研磨す
るものである。FIG. 1 shows an ordinary polishing apparatus in which a polishing plate 1 provided with a polishing cloth 2 is rotated in the direction of arrow a, and a wafer 3 fixed to a vacuum chuck 4 is brought into contact with the polishing liquid 5 while being supplied. By swinging, the material to be polished on the surface of the wafer 3 is polished.
本実施例では、上記研磨板１の直径は４００ｍｍ、その
回転速度は１２０ ｒｐｎ＋、ウェハ直径は４インチ、
その加工圧力は、２０〜３０ｇ／ｃ＋ｄである。また、
研磨液５は、純水（Ｈ，Ｏ）と、イソプロピルアルコ−
）Ｌ、（ＣＨ３ＣＨ２０Ｈ）との混合液中に、０．０１
μｍの酸化シリコン（ＳｉＯｚ）から砥粒が０．５％混
入されたものを使用し、その流量は２００ｃｃ／ｍｉｎ
である。In this embodiment, the polishing plate 1 has a diameter of 400 mm, a rotation speed of 120 rpm+, a wafer diameter of 4 inches,
The processing pressure is 20 to 30 g/c+d. Also,
The polishing liquid 5 includes pure water (H, O) and isopropyl alcohol.
)L, (CH3CH20H) in a mixed solution with 0.01
Uses μm silicon oxide (SiOz) mixed with 0.5% abrasive grains, and the flow rate is 200cc/min.
It is.
第２図は上記条件においてアルミニウムに銅が３％混入
された被研磨材の研磨を行なった場合の被研磨材の研磨
レートを示すものである。図示の様に、イソプロピルア
ルコールが１０％添加された場合の研磨レートは約１０
００人／ｍｉｎであり、無添加の場合（約１８０人／ｍ
１ｎ）に比べて、５倍以上、向上している。これは、イ
ソプロピルアルコールにより、一度削られたアルミニウ
ムからなる研磨屑が加工面に付着しにくくなったことに
加えて、研磨液の粘性が高（なり、研磨布２と、ウェハ
３の研磨面との間隔が広くなった結果、発生したアルミ
ニウムからなる研磨屑がすみやかにウェハ３・研磨布２
間から逃げるためであると考えられる。FIG. 2 shows the polishing rate of a material to be polished in which 3% copper was mixed with aluminum under the above conditions. As shown in the figure, when 10% isopropyl alcohol is added, the polishing rate is approximately 10%.
00 people/min, and without additives (approximately 180 people/m
This is an improvement of more than 5 times compared to 1n). This is because isopropyl alcohol makes it difficult for polishing debris made of aluminum that has been scraped to adhere to the processed surface, and the viscosity of the polishing liquid is high (which causes the polishing cloth 2 and the polished surface of the wafer 3 to As a result of the widening of the distance between
It is thought that this is to escape from the gap.
また、イソプロピルアルコールの添加量が約１３％以上
に増加した場合、研磨レートが低下するのは、研磨液の
粘性が増加し、研磨布２と、ウェハ３の研磨面との間隔
が広くなり過ぎたため、砥粒が研磨面に有効に作用しな
くなるためである。よって、本実施例ではイソプロピル
アルコールの添加量を１３％以下にする必要がある。Furthermore, when the amount of isopropyl alcohol added increases to about 13% or more, the polishing rate decreases because the viscosity of the polishing liquid increases and the distance between the polishing cloth 2 and the polishing surface of the wafer 3 becomes too wide. This is because the abrasive grains no longer act effectively on the polished surface. Therefore, in this example, the amount of isopropyl alcohol added must be 13% or less.
更に、第３図に多層配線の眉間絶縁膜９となっているＰ
ＳＧ（ｅケイ酸ガラス）の本実施例による研磨レートを
示す。図示の様に、イソプロピルアルコールの添加量が
増加すると、ＰＳＧの研磨レートが低下している。これ
は、イソプロピルアルコールの添加量が増加するにつれ
て、研磨液の粘性が増し、このために、研磨布２とウェ
ハ３の研磨布との間隔が徐々に広くなって砥粒がＰＳＧ
表面に有効に作用しなくなったためであり、ＰＳＧ以外
の物質においても、アルミニウムと材質を異にする物質
であれば、同様の効果を得ることが可能であると考えら
れる。Furthermore, as shown in FIG.
The polishing rate of SG (e-silicate glass) according to this example is shown. As shown in the figure, as the amount of isopropyl alcohol added increases, the polishing rate of PSG decreases. This is because as the amount of isopropyl alcohol added increases, the viscosity of the polishing liquid increases, and for this reason, the gap between the polishing cloth 2 and the polishing cloth of the wafer 3 gradually widens, causing the abrasive grains to become PSG.
This is because it no longer acts effectively on the surface, and it is thought that the same effect can be obtained with substances other than PSG if the material is different from aluminum.
以上説明した様に、本実施例によるアルミニウム研磨方
法によると、アルミニウムが含まれる被研磨材の研磨に
対しては、アルミニウムからなる研磨屑の研磨面への付
着が抑制されることから、その研磨レートが向上する。As explained above, according to the aluminum polishing method according to the present embodiment, when polishing a workpiece containing aluminum, adhesion of polishing debris made of aluminum to the polishing surface is suppressed, so that the polishing Rates will improve.
また、例えばＰＳＧからなる眉間絶縁膜９など、アルミ
ニウム以外の物質に対しては、研磨布と研磨面との間隔
が広くなることから、砥粒が有効に作用せず、その研磨
レートが低下する。このため、特に前記した多層配線の
形成において、アルミニウム合金からなる埋込み金属の
研磨に本実施例を適用した場合には、アルミニウムと、
層間絶縁膜との研磨選択比が大きいことからその研磨を
、制御性良く行なうことができる。更に、研磨布と研磨
面との間隔が広いことから、研磨面の温度上昇及び砥粒
の研磨面への埋込みが抑制され、アルミニウム変質層の
形成及びコンタクト窓への砥粒埋込みに起因するコン、
タクト抵抗の増加が防止される。またアルコールは、純
水によって除去可能であるため研磨後の洗浄を純水のみ
によって行なうことができる。Furthermore, for materials other than aluminum, such as the glabella insulating film 9 made of PSG, the distance between the polishing cloth and the polishing surface becomes wide, so the abrasive grains do not work effectively and the polishing rate decreases. . For this reason, when this embodiment is applied to polishing a buried metal made of an aluminum alloy, especially in the formation of the multilayer wiring described above, aluminum and
Since the polishing selectivity with respect to the interlayer insulating film is high, the polishing can be performed with good controllability. Furthermore, since the distance between the polishing cloth and the polishing surface is wide, the temperature rise of the polishing surface and the embedding of abrasive grains into the polishing surface are suppressed, and the formation of an aluminum deterioration layer and the embedding of abrasive grains into the contact window are suppressed. ,
An increase in takt resistance is prevented. Further, since alcohol can be removed with pure water, cleaning after polishing can be performed only with pure water.
以上、本実施例は、研磨液中にイソプロピルアルコール
を添加したものについて説明したが、その他にも、エチ
ルアルコール、プロピルアルコール、メチルアルコール
など池のアルコールを使用した場合においても、同様の
効果を得ることが可能である。例えば、０．０１μｍの
酸化シリコンが０．５％混入させた純水中に、１０％の
エチルアルコール（ＣＨ：Ｉ ＣＨ３ＣＨＯＨ）が添加
された研磨液を使用し、上記実施例の研磨装置と同条件
にて研磨を行なったところ、アルミニウムに銅が３％混
入された合金に対しては約５００人／ｍｉｎの研磨レー
トが得られ、エチルアルコール無添加の場合（約１８０
人／ｍ１ｎ）に比べて約２．７倍の速度で研磨できるこ
とが確認された。In this example, the case where isopropyl alcohol is added to the polishing liquid has been described, but the same effect can also be obtained by using other alcohols such as ethyl alcohol, propyl alcohol, methyl alcohol, etc. Is possible. For example, a polishing liquid in which 10% ethyl alcohol (CH:I CH3CHOH) is added to pure water mixed with 0.5% silicon oxide of 0.01 μm is used, and the same polishing apparatus as in the above example is used. When polishing was performed under these conditions, a polishing rate of approximately 500 polishers/min was obtained for an alloy containing 3% copper in aluminum, and a polishing rate of approximately 180 polishers/min was obtained when no ethyl alcohol was added.
It was confirmed that polishing can be performed at a speed approximately 2.7 times faster than the polishing speed (person/m1n).
以上述べた様に本発明によると、アルコールが添加され
た研磨液を使用してアルミニウムを研磨することにより
、アルミニウムの研磨レートが向上し、更に、アルミニ
ウム変質層の形成及び研磨面への砥粒埋込みが抑制され
る。As described above, according to the present invention, by polishing aluminum using a polishing liquid to which alcohol is added, the polishing rate of aluminum is improved, and furthermore, the aluminum deterioration layer is formed and the abrasive grains are formed on the polished surface. Embedding is suppressed.
第１図は、通常の研磨装置の構造を説明する図、第２図
は本発明実施例によるアルミニウムの研磨レートを示す
図、第３図は本発明実施例によるＰＳＧの研磨レートを
示す図、第４図は多層配線の形成方法を示す図である。
図において、ｌは研磨板、２は研磨布、３はウェハ、４
は真空チャック、５は研磨液、６はノズルである。また
、７は基板、８は絶縁膜、９は層間絶縁膜、９ａはコン
タクトホール、１０は第１の配線、１１は埋込み金属、
１２は第２の配線である。
ホ゛１八、７シン７゛躾憧
秦 １ 目
アルコール煽、広量 （′／ａ ）
不発Ｈ月の宴）はＭｌ、；よろタカ系
アルコール 添加量 （％）
Ｐ２Ｏの研ル−ト
％ ３ 目
夕乃酌鼻っ形へ方球
宴 ４ 必FIG. 1 is a diagram illustrating the structure of a normal polishing device, FIG. 2 is a diagram showing the polishing rate of aluminum according to the embodiment of the present invention, and FIG. 3 is a diagram showing the polishing rate of PSG according to the embodiment of the present invention. FIG. 4 is a diagram showing a method for forming multilayer wiring. In the figure, l is a polishing plate, 2 is a polishing cloth, 3 is a wafer, and 4
5 is a vacuum chuck, 5 is a polishing liquid, and 6 is a nozzle. Further, 7 is a substrate, 8 is an insulating film, 9 is an interlayer insulating film, 9a is a contact hole, 10 is a first wiring, 11 is a buried metal,
12 is a second wiring. Ho 18, 7 Shin 7 Discipline Admiration Qin 1 Alcohol incitement, large amount ('/a) misfire H month banquet) is Ml,; Yorotaka alcohol addition amount (%) P2O's training route % 3 Eye Yuno's cup-shaped nose ball banquet 4 required
Claims (1)
磨材を研磨布に当接し、研磨液を供給しつつ該被研磨材
の研磨を行なう半導体装置の製造方法において、 所定量のアルコールが含まれてなる研磨液を利用して該
研磨を行なうことを特徴とする半導体装置の製造方法。[Scope of Claim] A method for manufacturing a semiconductor device, in which a material to be polished containing aluminum provided on a semiconductor substrate is brought into contact with a polishing cloth, and the material to be polished is polished while supplying a polishing liquid, comprising: 1. A method for manufacturing a semiconductor device, characterized in that the polishing is performed using a polishing liquid containing alcohol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62077792A JPS63245365A (en) | 1987-03-31 | 1987-03-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62077792A JPS63245365A (en) | 1987-03-31 | 1987-03-31 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63245365A true JPS63245365A (en) | 1988-10-12 |
Family
ID=13643837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62077792A Pending JPS63245365A (en) | 1987-03-31 | 1987-03-31 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63245365A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584750A (en) * | 1994-09-07 | 1996-12-17 | Toshiba Machine Co., Ltd. | Polishing machine with detachable surface plate |
| US5607718A (en) * | 1993-03-26 | 1997-03-04 | Kabushiki Kaisha Toshiba | Polishing method and polishing apparatus |
| US6224464B1 (en) | 1994-07-08 | 2001-05-01 | Kabushiki Kaisha Toshiba | Polishing method and polisher used in the method |
-
1987
- 1987-03-31 JP JP62077792A patent/JPS63245365A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5607718A (en) * | 1993-03-26 | 1997-03-04 | Kabushiki Kaisha Toshiba | Polishing method and polishing apparatus |
| US6224464B1 (en) | 1994-07-08 | 2001-05-01 | Kabushiki Kaisha Toshiba | Polishing method and polisher used in the method |
| US5584750A (en) * | 1994-09-07 | 1996-12-17 | Toshiba Machine Co., Ltd. | Polishing machine with detachable surface plate |
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