JPS63244906A - Bias circuit - Google Patents

Bias circuit

Info

Publication number
JPS63244906A
JPS63244906A JP62075951A JP7595187A JPS63244906A JP S63244906 A JPS63244906 A JP S63244906A JP 62075951 A JP62075951 A JP 62075951A JP 7595187 A JP7595187 A JP 7595187A JP S63244906 A JPS63244906 A JP S63244906A
Authority
JP
Japan
Prior art keywords
high frequency
terminating resistor
bias circuit
tme
wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62075951A
Other languages
Japanese (ja)
Other versions
JPH0511802B2 (en
Inventor
Youichirou Yoda
誉田 要一朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62075951A priority Critical patent/JPS63244906A/en
Publication of JPS63244906A publication Critical patent/JPS63244906A/en
Publication of JPH0511802B2 publication Critical patent/JPH0511802B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a bias circuit with low loss in an available frequency band area and superior reflection loss outside the band area, by branching and connecting a transmission line (Tme) with 1/4-wave to a high frequency signal line, and connecting an open stub with 1/4-wave and the Tme terminated by a terminating resistor to the tip of the Tme. CONSTITUTION:The bias circuit is constituted in such a way that branching is performed by connecting the Tme1 to the high frequency signal line, and the open stub 2 with 1/4-wave and the Tme3 terminated by the terminating resistor 4 are connected to the tip of the Tme 1. To the terminating resistor 4, a high frequency short-circuited capacitor 5 and a choke coil 6 are connected, and a bias power source Vs is connected. In such constitution, a passing characteristic and a reflection loss characteristic observed from a high frequency line 11 are released by the Tme1 and the open stub 2 with 1/4-wave at the available frequency band area, then, the passing characteristic disappears. Also, reflection resistance is improved by the Tme3, the terminating resistor 4, and the capacitor 5 outside the band area.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は増幅器等の高周波能動回路におけるバイアス回
路に関し、特に使用周波数帯域内で低損失であり、帯域
外での反射損失の良いバイアス回路に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a bias circuit in a high frequency active circuit such as an amplifier, and particularly relates to a bias circuit that has low loss within the frequency band used and good return loss outside the band. .

〔従来の技術〕[Conventional technology]

従来、増幅器等の高周波能動回路の信号ラインに接続す
るバイアス回路は、使用周波数帯域内の影響を少なくし
てバイアスを供給するために、先端ショートの1/4ト
ランスミッションラインやチョークコイル等の構成を取
っている。
Conventionally, bias circuits connected to signal lines of high-frequency active circuits such as amplifiers have been configured with 1/4 transmission lines with shorted ends, choke coils, etc. in order to reduce the influence within the frequency band used and supply bias. taking it.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のバイアス回路は、使用周波数帯域外にお
いて反射損失が悪く、場合によっては完全反射となる場
合がある。このため、この種のバイアス回路を増幅器等
に使用した場合は、発振等の不具合が生ずるという問題
があり、このような帯域外の影響を取り除くためには専
用の別口路の接続が必要とされている。
The conventional bias circuit described above has poor reflection loss outside the frequency band used, and in some cases may result in complete reflection. For this reason, when this type of bias circuit is used in an amplifier, etc., problems such as oscillation may occur, and in order to eliminate such out-of-band effects, a dedicated separate connection is required. has been done.

本発明は使用周波数帯域内で低損失であり、帯域外での
反射損失の良いバイアス回路を提供することを目的とし
ている。
An object of the present invention is to provide a bias circuit that has low loss within the frequency band used and good reflection loss outside the band.

〔問題点を解決するための手段〕[Means for solving problems]

本発明のバイアス回路は、高周波信号ラインに1/4波
長トランスミッションラインを分岐接続し、この1/4
波長トランスミッションラインの先端に1/4波長オー
プンスタブと、終端抵抗により終端される1/4波長ト
ランスミッションライ、ンを接続した構成としている・ 〔実施例〕 次に、本発明を図面を参照して説明する。
The bias circuit of the present invention branches and connects a 1/4 wavelength transmission line to a high frequency signal line.
The wavelength transmission line has a configuration in which a 1/4 wavelength open stub is connected to the tip of the wavelength transmission line and a 1/4 wavelength transmission line terminated by a terminating resistor. [Example] Next, the present invention will be explained with reference to the drawings. explain.

第1図は本発明のバイアス回路構成図である。FIG. 1 is a diagram showing the configuration of a bias circuit according to the present invention.

図示のように、高周波信号ライン11に1/4波長トラ
ンスミッションライン1を接続して分岐ヲ行い、この1
/4波長トランスミッションライン1の先端に1/4波
長オープンスタブ2と、終端抵抗4により終端されたI
/4波長トランスミッションライン3を接続している。
As shown in the figure, a 1/4 wavelength transmission line 1 is connected to a high frequency signal line 11 to perform branching.
A 1/4 wavelength open stub 2 is placed at the tip of the /4 wavelength transmission line 1, and I is terminated by a terminating resistor 4.
/4 wavelength transmission line 3 is connected.

終端抵抗4には、高周波短絡コンデンサ5とチョークコ
イル6を接続し、バイアス電源■8に接続している。
A high frequency short-circuit capacitor 5 and a choke coil 6 are connected to the terminal resistor 4, which is connected to a bias power source 8.

この構成において、高周波信号ライン11から見た通過
特性と反射損失特性を第2図に示す。
In this configuration, the transmission characteristics and reflection loss characteristics as seen from the high frequency signal line 11 are shown in FIG.

すなわち、使用周波数帯域は1/4波長トランスミッシ
ョンラインlと1/4波長オープンスタブ2により開放
となり、通過損失(減衰特性)はなくなる。また、帯域
外は1/4波長トランスミツシヨン3と終端抵抗4.コ
ンデンサ5により反射損失を改善する。
That is, the frequency band used is opened by the 1/4 wavelength transmission line 1 and the 1/4 wavelength open stub 2, and there is no passing loss (attenuation characteristic). Also, outside the band, there is a 1/4 wavelength transmission 3 and a terminating resistor 4. Reflection loss is improved by capacitor 5.

これらにより帯域制限特性を得ることができる。These allow band-limiting characteristics to be obtained.

また、設計時に1/4波長トランスミッションライン1
.1/4波長オープンスタブ2のインピーダンスを任意
に設定することにより、帯域幅を変えることができる。
Also, when designing, 1/4 wavelength transmission line 1
.. By arbitrarily setting the impedance of the 1/4 wavelength open stub 2, the bandwidth can be changed.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、高周波信号ラインに1/
4波長トランスミッションラインを分岐接続し、この1
/4波長トランスミッションラインの先端に1/4波長
オープンスタブと、終端抵抗により終端される1/4波
長トランスミッションラインを接続しているので、増幅
器等の高周波能動回路に使用した場合でも、使用周波数
帯域内で低損失であるとともに、帯域外での反射tM失
を改善して帯域外発振等の帯域外の影響を防ぐことがで
きる効果がある。
As explained above, the present invention provides a high-frequency signal line with a
The 4-wavelength transmission line is branched and connected, and this 1
A 1/4 wavelength open stub and a 1/4 wavelength transmission line terminated by a terminating resistor are connected to the tip of the 4 wavelength transmission line, so even when used in high frequency active circuits such as amplifiers, the operating frequency band can be maintained. In addition to having low loss within the band, it is effective in improving reflection tM loss outside the band and preventing effects outside the band such as out-of-band oscillation.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明のバイアス回路の一実施例の回路構成図
、第2図は信号ラインにおける減衰量。 反射損失の周波数特性図である。 1・・・1/4波長トランスミッションライン、2・・
・1/4波長オープンスタブ、3・・・1/4波長トラ
ンスミッションライン、4・・・終端抵抗、5・・・高
周波短絡コンデンサ、6・・・チョークコイル、11・
・・高周波信号ライン。 第1図 フンヲ′ンフ
FIG. 1 is a circuit diagram of an embodiment of the bias circuit of the present invention, and FIG. 2 shows the amount of attenuation in the signal line. FIG. 3 is a frequency characteristic diagram of reflection loss. 1...1/4 wavelength transmission line, 2...
・1/4 wavelength open stub, 3...1/4 wavelength transmission line, 4...Terminal resistor, 5...High frequency short circuit capacitor, 6...Choke coil, 11.
...High frequency signal line. Figure 1 Funwo'funfu

Claims (1)

【特許請求の範囲】[Claims] (1)高周波信号ラインに接続するバイアス回路におい
て、前記高周波信号ラインに1/4波長トランスミッシ
ョンラインを分岐接続し、この1/4波長トランスミッ
ションラインの先端に1/4波長オープンスタブと、終
端抵抗により終端される1/4波長トランスミッション
ラインを接続したことを特徴とするバイアス回路。
(1) In a bias circuit connected to a high frequency signal line, a 1/4 wavelength transmission line is branch-connected to the high frequency signal line, and a 1/4 wavelength open stub and a terminating resistor are connected to the tip of this 1/4 wavelength transmission line. A bias circuit characterized by connecting a terminated 1/4 wavelength transmission line.
JP62075951A 1987-03-31 1987-03-31 Bias circuit Granted JPS63244906A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62075951A JPS63244906A (en) 1987-03-31 1987-03-31 Bias circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62075951A JPS63244906A (en) 1987-03-31 1987-03-31 Bias circuit

Publications (2)

Publication Number Publication Date
JPS63244906A true JPS63244906A (en) 1988-10-12
JPH0511802B2 JPH0511802B2 (en) 1993-02-16

Family

ID=13591034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62075951A Granted JPS63244906A (en) 1987-03-31 1987-03-31 Bias circuit

Country Status (1)

Country Link
JP (1) JPS63244906A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008005128A (en) * 2006-06-21 2008-01-10 Mitsubishi Electric Corp Microwave amplifier
JP2008136182A (en) * 2006-10-25 2008-06-12 Ntt Docomo Inc Bias circuit
JP2012518373A (en) * 2009-02-18 2012-08-09 ホリンワース ファンド,エル.エル.シー. Metamaterial power amplifier system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008005128A (en) * 2006-06-21 2008-01-10 Mitsubishi Electric Corp Microwave amplifier
JP4641285B2 (en) * 2006-06-21 2011-03-02 三菱電機株式会社 Microwave amplifier
JP2008136182A (en) * 2006-10-25 2008-06-12 Ntt Docomo Inc Bias circuit
JP2012518373A (en) * 2009-02-18 2012-08-09 ホリンワース ファンド,エル.エル.シー. Metamaterial power amplifier system
US8704593B2 (en) 2009-02-18 2014-04-22 Hollinworth Fund, L.L.C. Metamaterial power amplifier systems

Also Published As

Publication number Publication date
JPH0511802B2 (en) 1993-02-16

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