JPS63243259A - Manufacturing method of ultra-thin ceramic film - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing an ultra-thin ceramic film mainly used as a diaphragm for a speaker for medium and high frequencies.

(Prior Art) Conventionally, a metal thin film such as A2Ti has been used for the diaphragm of a speaker for medium and high frequencies.

(Problem to be solved by the invention) However, in recent years, there has been a demand for diaphragms made of lightweight and highly rigid materials, but the metal thin films of Al, Ti, etc. that have been used so far are manufactured by rolling. Therefore, there is a limit to weight reduction. For this reason, ceramics such as A1203 and TiN can be considered, but conventional polishing techniques can only polish ceramics to a depth of several 100 μm.
Polishing on the μm order was impossible, and it was difficult to process into any desired shape.

(Object of the invention) The present invention was made in view of the above-mentioned circumstances.
The object of the present invention is to provide a manufacturing method capable of obtaining an ultra-thin ceramic film of m order.

(Means for Solving the Problems) In order to solve the above problems, the method for manufacturing ultra-thin ceramic films of the present invention involves setting a metal mask on an etched metal substrate to obtain a desired pattern, and then depositing Ceramics of 0.1 to
The method is characterized in that an extremely thin film of 50 μm is formed, and then the metal substrate is removed by etching to obtain a single extremely thin ceramic film.

(Function) As mentioned above, the method for producing an ultra-thin ceramic film of the present invention involves setting a conventional metal mask and using a thin film production method in vacuum to create an ultra-thin ceramic film, which is lightweight and rigid. It is possible to easily obtain ultra-thin ceramic films with high

(Example) A first example of the method for manufacturing an ultra-thin ceramic film of the present invention will be described with reference to FIGS. 1 and 2. As shown in Figure 1 (
On the table 2 in the sputtering apparatus 1, there are 6 vertical (1 + m, 60 fins, 0 thickness) made of metal such as Aj2, Cu, SUS, etc., which can be etched with acid or alkali, in this example C'u.
．． Set the substrate 3 made of 0.05 mm, and
A frame-shaped metal mask 4 made of 5US314 with a thickness of 0.1 mm and an outer shape of 80 mm in length and 80 mm in width and an inner shape of 30 mm in diameter was placed on top to obtain the desired pattern. Next, a target with a diameter of 152.4 mm and a thickness of 5 mm was placed on the table 5 facing the Cu substrate 3. 203 plate 6, and set the distance between Cu substrate 3 and Al2O3 plate 6 to 90 mm.
After forming a dragon, the inside of the sputtering device 1 was heated to 5xto-
” After vacuum drawing to r o r r 1.0×l0-
Al2O3 without Ar gas atmosphere of 3T o r r
was sputtered with RF3 for 10 hours to coat the pattern on the Cu5 plate 3 in the metal mask 4 with Al2O3 to form an ultra-thin film 7 of 20 μm. After cooling, the Cu substrate 3 is taken out from inside the sputtering apparatus 1, the metal mask 4 on the Cu substrate 3 is removed, and the
The substrate 3 is placed in an etching solution 9 in a bath 8, in this example 21 to 30.
After dipping for a minute, the Cu substrate 3 was dissolved and removed to obtain a single circular Al2O3 ultrathin film 7 with a diameter of 30 mm and a thickness of 20 μm.

Next, a second embodiment will be explained with reference to FIGS. 3 and 4.

Table 2 in sputtering apparatus 1 as shown in FIG.
A substrate 3' made of mirror-finished cone-shaped 5US314 was set on the substrate 3', and an annular metal mask 4 made of S U 5314 with an outer diameter of 601 mm, an inner diameter of 20 mm, and a thickness of 0.1 m (7) was placed on the substrate 3'. ′ was set to obtain the desired pattern. Next, a TiN plate 6' with a diameter of 152.4+n is placed as a target on the table 5 facing the substrate 3', and after setting the distance between the substrate 3' and the TiN plate 6' to be 90 mm, the sputtering device 1 is placed. 5xto-”r o
After vacuum drawing to r r 1.0×10-'T o
TiN was heated at 500 V at 1 in an Ar gas atmosphere of r r.
Spunter for 0 hours and remove the substrate 3' inside the metal mask 4'.
The upper pattern was coated with TiN to form an extremely thin film 7' having a thickness of 30 μm. After cooling, the substrate 3' is taken out from inside the sputtering apparatus 1, the metal mask 4' on the substrate 3' is removed, and the substrate 3' is soaked in the etching solution 9 in the bath 8, in this example, for 1 hour at 21, as shown in FIG. The substrate 3' was immersed, and the substrate 3' was dissolved and removed to obtain a cone-shaped single TiN ultra-thin film 7' with a diameter of 20 mm, a height of 20 mm, and a thickness of 30 μm.

Both the Al2O3 ultra-thin film 7 of the first embodiment and the T i N ultra-thin film 7' of the second embodiment thus obtained are lightweight and have high rigidity, and are therefore suitable as a diaphragm for a speaker for medium and high frequencies.

(Effects of the Invention) As can be seen from the above explanation, according to the method for producing an ultra-thin ceramic film of the present invention, the thickness of 0.1 to 50 μm, which was previously impossible,
The present invention has the effect that it is possible to easily obtain an ultra-thin film suitable as a diaphragm for a lightweight, highly rigid mid-to-high frequency speaker made of ceramic 7x having a desired shape.

[Brief explanation of the drawing]

1 and 2 are diagrams showing the steps of a first embodiment of the method for producing an ultra-thin ceramic film of the present invention, and FIGS. 3 and 4 are diagrams showing a second embodiment of the method for producing an ultra-thin ceramic film of the present invention. FIG. Applicant Tanaka Kikinzoku Kogyo Co., Ltd. Figure 2 Figure 4 7'... 7iN extremely narrow

Claims (1)

[Claims] A metal mask is set on an etchable metal substrate to obtain the desired pattern, and then 0.1 to 50 μm ceramic electrodes are placed on the metal substrate by vapor deposition, sputtering, ion plating, CVD (chemical vapor deposition), etc. 1. A method for producing an ultra-thin ceramic film, which comprises forming a thin film and then removing a metal substrate by etching to obtain a single ultra-thin ceramic film.