JPS63239994A - Frequency tunable laser device - Google Patents
Frequency tunable laser deviceInfo
- Publication number
- JPS63239994A JPS63239994A JP7350387A JP7350387A JPS63239994A JP S63239994 A JPS63239994 A JP S63239994A JP 7350387 A JP7350387 A JP 7350387A JP 7350387 A JP7350387 A JP 7350387A JP S63239994 A JPS63239994 A JP S63239994A
- Authority
- JP
- Japan
- Prior art keywords
- light
- frequency
- incident
- laser
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 230000010287 polarization Effects 0.000 abstract description 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Landscapes
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、半導体レーザの出力光の周波数を連続的に可
変とする装置の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a device that continuously varies the frequency of output light from a semiconductor laser.
(従来の技術)
従来、レーザの出力光の周波数を連続的に可変とする装
置としては、YAGレー1ア等にJ3けるように、光パ
ラメトリック発蛋器によって、連続的に周波数を変化で
きるものがある。(Prior art) Conventionally, as a device for continuously changing the frequency of the output light of a laser, there is a device that can continuously change the frequency using an optical parametric incubator, as shown in YAG laser 1A, etc. There is.
(発明が解決しようとする問題点)
しかしながら、半導体レーザはYAGレー+f等に比べ
て出力が低いため、光パラメトリック発振を実現できな
い。従来半導体レーザ゛でその出射光の周波数を連続的
に変化できるものは、半)9体し−ザ素子全体の温度を
制御してその周波数を可変とするものであったため、制
罪性、応答速度等に難点があった。(Problems to be Solved by the Invention) However, since a semiconductor laser has a lower output than a YAG laser+f, etc., optical parametric oscillation cannot be realized. Conventional semiconductor lasers that can continuously change the frequency of their emitted light are semi-nine semiconductor lasers. There were problems with speed, etc.
本発明はこのような問題点を解決するために41された
もので、半導体レーザの出力周波数を電気的に制御して
連続可変でき、制御性、応答速度の浸れた周波数可変レ
ーザ装置を実現することを目的とする。The present invention was developed in order to solve these problems, and it is possible to electrically control the output frequency of a semiconductor laser to continuously vary it, thereby realizing a variable frequency laser device with excellent controllability and response speed. The purpose is to
(問題点を解決するための手段)
本発明はレーザ出力周波数を連続的に可変とする周波数
可変レーザ装置に係るもので、その特徴とするところは
レーザ光源と、このレーザ光源の出射光を入射して電気
的な制御でその周波数を連続的にシフトできる光周波数
シフタと、この光周波数シフタの出射光に関連する光を
反射する位相共役ミラーとを備え、光周波数シフタから
の出射光の方向の変化を位相共役ミラーで打消すことに
より、周波数シフトされた光を常に一定の方向に出射す
るように構成した点にある。(Means for Solving the Problems) The present invention relates to a variable frequency laser device that continuously varies the laser output frequency, and its features include a laser light source and an input light source for emitted light from the laser light source. and a phase conjugate mirror that reflects light related to the light emitted from the optical frequency shifter, and the direction of the light emitted from the optical frequency shifter. The structure is configured so that the frequency-shifted light is always emitted in a constant direction by canceling the change in the frequency with a phase conjugate mirror.
(実施例) 以下本発明を図面を用いて詳しく説明する。(Example) The present invention will be explained in detail below using the drawings.
第1図は本発明に係る周波数可変レーザ装置の一実施例
を示づ゛構成ブロック図である。1は駆動回路および発
振周波数安定化回路からなる制御回路、2はこの制御回
路1により制御され狭周波数幅のレー(ア光を出射する
外部共振器付き半導体レーザ等の半導体レーザ光源、3
はこの半導体レーザ光源2の出射光を入射するコリメー
タレンズ、4はこのコリメータレンズ3の出射光を入射
する戻り光防止用の光アイソレータ、5はこの光アイソ
レータ4の出射光を入射してこれを全て出射するように
配設された偏光プリズム、6は光周波数シフタを構成し
前記偏光プリズム5の出射光を入射する超音波変調器、
7はこの超音波変調器6の駆動周波数を電気的に制御す
る駆動回路、8は前期超音波変調器6の出射光を入射ザ
る1/4波長板、9は位相共役ミラーを構成し前記1/
4波長板8の出射光を入射するBaTtO1単結晶であ
る。ここでBaT、03単結晶は位相共役波を発注する
た′めの非線形光学結晶である。ここで位相共役波とは
、入射光Eに対してその複素共役E1を指している。8
a丁tO3単結品では位相)(投波の発生は縮退4光子
混合という過程によって行われる。FIG. 1 is a block diagram showing an embodiment of a variable frequency laser device according to the present invention. 1 is a control circuit consisting of a drive circuit and an oscillation frequency stabilization circuit; 2 is a semiconductor laser light source such as a semiconductor laser with an external resonator that emits narrow frequency width laser light; 3;
numeral 4 is a collimator lens into which the emitted light from the semiconductor laser light source 2 is incident; numeral 4 is an optical isolator for preventing return light into which the emitted light from the collimator lens 3 is incident; 5 is an optical isolator into which the emitted light from the optical isolator 4 is incident; a polarizing prism arranged to emit all the light; 6 constitutes an optical frequency shifter and an ultrasonic modulator into which the light emitted from the polarizing prism 5 enters;
7 is a drive circuit that electrically controls the driving frequency of this ultrasonic modulator 6; 8 is a quarter-wave plate that receives the output light from the ultrasonic modulator 6; and 9 is a phase conjugate mirror; 1/
It is a BaTtO1 single crystal into which the light emitted from the four-wavelength plate 8 is incident. Here, the BaT, 03 single crystal is a nonlinear optical crystal for generating phase conjugate waves. Here, the phase conjugate wave refers to the complex conjugate E1 of the incident light E. 8
In the case of a tO3 single-crystal product, phase) (wave generation is performed by a process called degenerate four-photon mixing.
上記のような構成のv4置の動作を以下に説明する。半
導体レーザ光源2の出射光はコリメータレンズ3により
平行光となり、光アイソレータ4を通過して偏光プリズ
ム5に入射する。この入射光は上述のように偏光プリズ
ム5から全て出射されて超音波変調器6に入射する。超
音波変調器6は光の周波数シフタとして動作する。すな
わち半導体レーザ2の出射光の周波数をωo1超音波変
調器6の変調周波数をωSとすると、1次回折光の周波
数はω。+ωSとなる(光の進行方向と超音波の進行方
向の関係を適当に選ぶことにより、ω0−ωSとなるよ
うに配置することもできる)。The operation of the v4 device configured as described above will be explained below. The emitted light from the semiconductor laser light source 2 becomes parallel light by the collimator lens 3, passes through the optical isolator 4, and enters the polarizing prism 5. All of this incident light is emitted from the polarizing prism 5 and enters the ultrasonic modulator 6 as described above. The ultrasonic modulator 6 operates as an optical frequency shifter. That is, if the frequency of the emitted light from the semiconductor laser 2 is ωo1 and the modulation frequency of the ultrasonic modulator 6 is ωS, then the frequency of the first-order diffracted light is ω. +ωS (by appropriately selecting the relationship between the traveling direction of the light and the ultrasound, the arrangement can be made so that ω0−ωS).
超音波変調器6で回折された1次回折光は1/4波長板
8を通過して円偏光となりBaTtOs単結晶9に入射
する。8aTiOz単結晶9では入割面で屈折した光を
ポンプ光として利用して位相共役波を発生させている。The first-order diffracted light diffracted by the ultrasonic modulator 6 passes through a quarter-wave plate 8 to become circularly polarized light and enters a BaTtOs single crystal 9. In the 8aTiOz single crystal 9, a phase conjugate wave is generated by using the light refracted at the cleavage plane as pump light.
この位相共役波は反射光として、入射光と同一の光路を
逆に戻ってゆく。This phase conjugate wave returns as reflected light along the same optical path as the incident light.
この光は1/4波長板8を通って入射光とは直交する偏
波面を持つ直線偏光となるから、再び超音波変WA21
6を通過してωo+2ωSの周波数とlzす、偏光プリ
ズム5で直角の方向に反射されて出力光となる。超音波
変調器6の1次回折光の方向は、その変調周波数に対応
して変化するが、位相共役波はその性質上必ず入射光と
同一の光路を逆に戻るので、R柊的に出力光の出射角は
変化しない。This light passes through the quarter-wave plate 8 and becomes linearly polarized light with a plane of polarization perpendicular to the incident light, so the ultrasonic modifier WA21
6 and has a frequency of ωo+2ωS, and is reflected by the polarizing prism 5 in the right angle direction to become output light. The direction of the first-order diffracted light of the ultrasonic modulator 6 changes depending on its modulation frequency, but due to its nature, the phase conjugate wave always returns in the opposite direction along the same optical path as the incident light. The exit angle of does not change.
このような構成の周波数可変レーザ装置によれば、ωS
を電気的に変化させることにより、ω0+2ωSの周波
数の出射光を常に一定の出射角かつ一定出力で得ること
ができる。According to the variable frequency laser device having such a configuration, ωS
By electrically changing , it is possible to obtain output light with a frequency of ω0+2ωS at a constant output angle and a constant output.
なお上記の実施例で、BaT(Ox単結晶の代りに、B
SO単結晶に電界を加えたものや、L。In the above example, instead of BaT (Ox single crystal), B
One in which an electric field is applied to SO single crystal, and L.
NbO3単結晶、Naガス等位相共役波を発生できる任
意の材料を用いることができる。Any material capable of generating phase conjugate waves, such as NbO3 single crystal or Na gas, can be used.
また超音波変調器6の出射光として、1次回折光以外の
高次の回折光を用いれば、周波数シフト量を大きくする
ことができる。Furthermore, if higher-order diffracted light other than the first-order diffracted light is used as the emitted light from the ultrasonic modulator 6, the amount of frequency shift can be increased.
また光の回折はB l agcx回折でもRaman−
Nath散乱のどちらを利用してもよい。In addition, light diffraction can be performed by B l agcx diffraction or Raman-
Either Nath scattering may be used.
また光周波数シフタとしては超音波変5i器以外のもの
を利用してもよい。Further, as the optical frequency shifter, something other than the ultrasonic transducer 5i may be used.
第2図は本発明に係る周波数可変レーザ装置の変形例で
BaT+03単結晶9に外部からボンブ光14を加えた
ものを示す要部構成ブロック図である。10はへrレー
ザ等を用いた外部ポンプ光源、11はこの外部ポンプ光
ff110からの出射光がBaT703単結晶9を通過
した光を反射するミラーである。1/4波長板8からB
aTjO31t1結晶9へ入射した入射光12は外部ポ
ンプ光14と衝突すると位相共役波13を発生し、再び
入射光と同一の光路を逆にもどる。FIG. 2 is a block diagram illustrating a modification of the variable frequency laser device according to the present invention, in which a bomb beam 14 is added to a BaT+03 single crystal 9 from the outside. Reference numeral 10 denotes an external pump light source using a helium laser or the like, and reference numeral 11 denotes a mirror that reflects the light emitted from the external pump light ff110 that has passed through the BaT703 single crystal 9. 1/4 wavelength plate 8 to B
When the incident light 12 that has entered the aTjO31t1 crystal 9 collides with the external pump light 14, it generates a phase conjugate wave 13 and returns again along the same optical path as the incident light.
このような構成の周波数可変レーザ装置によれば、ポン
プ光のロスが少ないので、位相共役ミラーとしての反射
率を向上することができる。According to the variable frequency laser device having such a configuration, the loss of pump light is small, so that the reflectance as a phase conjugate mirror can be improved.
なお上記の変形例において、第1図の半導体レーザ光源
2の出力の一部を光学系により導いて外部ポンプ光とし
てもよい。In the above modification, a part of the output of the semiconductor laser light source 2 shown in FIG. 1 may be guided by an optical system to be used as external pump light.
(発明の効果)
以上述べたように本発明によれば、半導体レーザの出力
周波数を電気的に制御して連続可変でき、制御性、応答
速度の優れた周波数可変レーザ装置を簡単な構成で実現
することができる。また位相共役ミラーの作用により、
出力光を常に一定の出射角で得ることができる。(Effects of the Invention) As described above, according to the present invention, the output frequency of a semiconductor laser can be electrically controlled and continuously varied, and a variable frequency laser device with excellent controllability and response speed can be realized with a simple configuration. can do. Also, due to the action of the phase conjugate mirror,
Output light can always be obtained at a constant output angle.
第1図は本発明に係る周波数可変レーザ装置の一実施例
を示す構成ブロック図、第2図は本発明に係る周波数可
変レーザ装置の変形例を示す要部構成ブロック図である
。
2・・・レーザ光源、6・・・光周波数シフタ、9・・
・位相共役ミラー。FIG. 1 is a block diagram showing an embodiment of a variable frequency laser device according to the present invention, and FIG. 2 is a block diagram showing a modification of the variable frequency laser device according to the present invention. 2... Laser light source, 6... Optical frequency shifter, 9...
・Phase conjugate mirror.
Claims (2)
変レーザ装置において、レーザ光源と、このレーザ光源
の出射光を入射して電気的な制御でその周波数を連続的
にシフトできる光周波数シフタと、この光周波数シフタ
の出射光に関連する光を反射する位相共役ミラーとを備
え、光周波数シフタからの出射光の方向の変化を位相共
役ミラーで打消すことにより、周波数シフトされた光を
常に一定の方向に出射するように構成したことを特徴と
する周波数可変レーザ装置。(1) A variable frequency laser device that continuously varies the laser output frequency includes a laser light source and an optical frequency shifter that can input the emitted light of the laser light source and shift its frequency continuously under electrical control. , and a phase conjugate mirror that reflects light related to the light emitted from the optical frequency shifter, and by canceling changes in the direction of the light emitted from the optical frequency shifter with the phase conjugate mirror, the frequency-shifted light is always reflected. A variable frequency laser device characterized by being configured to emit light in a fixed direction.
ミラーとして非線形光学効果素子を用いた特許請求の範
囲第1項記載の周波数可変レーザ装置。(2) The variable frequency laser device according to claim 1, which uses an ultrasonic optical modulator as the optical frequency shifter and a nonlinear optical effect element as the phase conjugate mirror.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7350387A JPH0671114B2 (en) | 1987-03-27 | 1987-03-27 | Frequency variable laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7350387A JPH0671114B2 (en) | 1987-03-27 | 1987-03-27 | Frequency variable laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63239994A true JPS63239994A (en) | 1988-10-05 |
JPH0671114B2 JPH0671114B2 (en) | 1994-09-07 |
Family
ID=13520121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7350387A Expired - Lifetime JPH0671114B2 (en) | 1987-03-27 | 1987-03-27 | Frequency variable laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0671114B2 (en) |
-
1987
- 1987-03-27 JP JP7350387A patent/JPH0671114B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0671114B2 (en) | 1994-09-07 |
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