JPS63239174A - Method of joining metal member to ceramic substrate - Google Patents
Method of joining metal member to ceramic substrateInfo
- Publication number
- JPS63239174A JPS63239174A JP7384587A JP7384587A JPS63239174A JP S63239174 A JPS63239174 A JP S63239174A JP 7384587 A JP7384587 A JP 7384587A JP 7384587 A JP7384587 A JP 7384587A JP S63239174 A JPS63239174 A JP S63239174A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- metal member
- joining
- metal
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 42
- 239000000758 substrate Substances 0.000 title claims description 31
- 239000002184 metal Substances 0.000 title claims description 29
- 229910052751 metal Inorganic materials 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 25
- 239000010409 thin film Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000005219 brazing Methods 0.000 claims description 2
- 238000007733 ion plating Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000010949 copper Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- -1 AIl Chemical class 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はセラミックス基体と金属部材との接合方法に関
するものであって、特に従来よりも強固な接合強度が得
られる様な接合方法に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method of joining a ceramic substrate and a metal member, and particularly relates to a joining method that can provide stronger joining strength than conventional methods. be.
近年電子工業の発達に伴い、電子回路基板等セラミック
ス基体と金属部材との接合体が注目されている、従来か
らセラミックス基体と金属部材との接合方法に関しては
多くの方法が提案されており、一般的に、は接着材を用
いたり、加熱、加圧等により接合する方法が行なわれて
いる。In recent years, with the development of the electronics industry, joined bodies of ceramic substrates and metal components such as electronic circuit boards have been attracting attention.Many methods have been proposed for joining ceramic substrates and metal components; Generally speaking, bonding methods using adhesives, heating, pressure, etc. are used.
これらの方法は基本的にはセラミックスに金属が濡れる
ことが前提であり、比較的金属酸化物と濡れやすい酸化
物系セラミックス例えばＡＩｌ、□０３、ＭｇＯ，Ｓｉ
Ｏ□等に関しては、例えば特開昭５９−３０７８２号発
明等多数の研究報告や実例が示されている。一方弁酸化
物系セラミックス例えばＡ／！Ｎ、Ｓ ｉ、Ｎａ 、Ｂ
Ｎ、Ｓ ｉＣ等はほとんど金属と濡れないため、あらか
じめこれらセラミックスの表面改質、例えば表面酸化、
酸化物コーティング等を行なった後金属部材と接合する
方法がとられているが、研究報告や実例（例えば特開昭
５５−１１３６７８号発明等）は酸化物系セラミックス
に比べると少ない。These methods are basically based on the premise that the metal gets wet with ceramics, and oxide ceramics that are relatively easy to get wet with metal oxides, such as AIl, □03, MgO, Si, etc.
Regarding O□, etc., many research reports and examples have been disclosed, such as the invention in Japanese Patent Application Laid-Open No. 59-30782. On the other hand, valve oxide ceramics such as A/! N, Si, Na, B
Since N, SiC, etc. hardly wet with metals, surface modification of these ceramics, such as surface oxidation,
A method has been used in which ceramics are bonded to metal members after being coated with an oxide, but there are fewer research reports and actual examples (for example, the invention disclosed in JP-A-55-113678) than with oxide-based ceramics.
前記従来のセラミックス基体と金属部材との接合方法に
おいては、セラミックスと金属との接合界面に脆い中間
相が存在することが多く、更にセラミックスと金属との
熱膨張係数の相違によって前記接合界面に応力を生じ、
接合部特にセラミックス側に微細な亀裂が発生する場合
が多いため、充分な接合強度を得ることが出来なかった
。In the conventional bonding method of a ceramic substrate and a metal member, a brittle intermediate phase often exists at the bonding interface between the ceramic and the metal, and further stress is generated at the bonding interface due to the difference in thermal expansion coefficient between the ceramic and the metal. arises,
Since minute cracks often occur at the joint, especially on the ceramic side, sufficient joint strength could not be obtained.
更に、スパッタ法や蒸着法等の気相法によってセラミッ
クス基体上にＴｉやＭＯ等の薄膜を形成した後金属部材
を接合する方法も試みられているが、この場合も接合界
面に脆い中間相（例えばＴｉの場合はＴｉｅｔ、ＴｉＮ
、Ｔｉｃ等）が形成されることが多く、やはり充分な接
合強度が得られていない。Furthermore, attempts have also been made to form a thin film of Ti, MO, etc. on a ceramic substrate by a vapor phase method such as sputtering or vapor deposition, and then bond the metal members together; however, in this case as well, a brittle intermediate phase ( For example, in the case of Ti, Tiet, TiN
, Tic, etc.) are often formed, and sufficient bonding strength is still not obtained.
〔問題点を解決するための手段］
本発明は上記の点に鑑みなされたものであり、その目的
とするところは、セラミックス基体上に金属部材を接合
した際に、従来よりも強固な接合強度が得られる様な接
合方法を提供することである。[Means for Solving the Problems] The present invention has been made in view of the above points, and its purpose is to provide stronger bonding strength than before when a metal member is bonded to a ceramic substrate. The object of the present invention is to provide a joining method that can obtain the following.
即ち本発明は、セラミックス基体表面を物理的にエツチ
ングした後、金属の薄膜を気相成長法により形成し、該
薄膜を介してセラミックス基体上に所望の金属部材を熱
的又は機械的手段により接合することを特徴とする金属
部材をセラミックス基体に接合する方法である。That is, in the present invention, after physically etching the surface of a ceramic substrate, a thin metal film is formed by vapor phase growth, and a desired metal member is bonded onto the ceramic substrate via the thin film by thermal or mechanical means. This is a method for joining a metal member to a ceramic substrate.
本発明においてセラミックス基体表面を物理的にエツチ
ングする手段としては、Ｈｚ 、Ａ ｒ等のセラミック
ス基体を構成していない原子のイオン或いは電子を用い
ることが出来る。又前記エツチングされたセラミックス
基体表面にＡｌ２．Ｃｕ。In the present invention, as means for physically etching the surface of the ceramic substrate, ions or electrons of atoms that do not constitute the ceramic substrate, such as Hz or Ar, can be used. Further, Al2. Cu.
Ｆｅ等の薄膜を気相成長させる手段としては、スパッタ
法、蒸着法、イオンプレーティング法、ＣＶＤ法、ＩＶ
Ｄ法の内いずれか１種の方法を用いることが出来る。以
上の様にして形成された′ａ膜を介してセラミックス基
体上にＦｅ系、Ｃｕ系、ＡＩ！、系等の金属部材を熱的
又は機械的手段により接合する方法は特に限定されるも
のではなく、加熱、ロー付け、加圧、電圧印加等の方法
を単独で、又は二つ以上組合わせて行なうことが出来る
。Methods for vapor phase growth of thin films such as Fe include sputtering, vapor deposition, ion plating, CVD, and IV
Any one of methods D can be used. Fe-based, Cu-based, AI! There are no particular limitations on the method of joining metal members such as , systems, etc. by thermal or mechanical means, and methods such as heating, brazing, pressurization, voltage application, etc. may be used alone or in combination of two or more. It can be done.
本発明においては、セラミックス基体例えばＡＩＮやＡ
２□０１等の表面をイオン等でエツチングすることによ
り、前記ＡＩＮやＡ２□０３が分解して酸素や窒素はセ
ラミックス基体上から遊離し、基体表面はＡ２に富んだ
組成となる。即ち該基体表面は金属に近い性質を有する
様になるので、該基体表面に強固に結合したＡｌ、Ｃｕ
、Ｆｅ等の薄膜を形成することが可能であり、該薄膜を
介して金属部材を接合することにより強固な接合強度を
得ることが出来る。又本発明においては接合界面に脆い
中間相を生じることがないので、上記中間相による接合
強度低下も生じない。In the present invention, a ceramic substrate such as AIN or A
By etching the surface of 2□01 etc. with ions or the like, the AIN and A2□03 are decomposed and oxygen and nitrogen are liberated from the ceramic substrate, so that the substrate surface has a composition rich in A2. In other words, since the surface of the substrate comes to have properties close to metal, Al and Cu strongly bonded to the surface of the substrate
It is possible to form a thin film of , Fe, etc., and by joining metal members through the thin film, strong joint strength can be obtained. Furthermore, in the present invention, since no brittle intermediate phase is generated at the bonding interface, the bonding strength does not deteriorate due to the intermediate phase.
〔実施例１〕 以下に実施例により本発明を更に具体的に説明する。[Example 1] The present invention will be explained in more detail below using Examples.
セラミックス基体としてＡ１Ｎセラミックスを用い、こ
れにスパッタ装置内でＡｒ８０％、８２２０％の混合ガ
ス中（ガス圧： ５ Ｘｌ０−’Ｔｏｒｒ）で投入電力
３００ｗでイオンエツチングを行なった後、投入電力５
００ＷにてＡｆの薄膜を５−形成した。しかる後Ｂ！Ｊ
薄膜上にｊアさ３００−の銅板を重ね、加熱温度７００
°Ｃ１Ｉ Ｘｌ０−’Ｔｏｒｒの真空雰囲気の接合条件
で接合させた。この様にして得られた接合体の接合強度
は９．６ｋｇ／ｃｕ＋と良好であった。A1N ceramic was used as the ceramic substrate, and ion etching was performed on it in a sputtering device in a mixed gas of 80% Ar and 8220% (gas pressure: 5 Xl0-'Torr) with an input power of 300 W, and then with an input power of 5
A thin film of Af was formed at 00W. After that, B! J
A copper plate with a diameter of 300 mm was placed on top of the thin film, and heated to a temperature of 700 mm.
The bonding was performed under a vacuum atmosphere bonding condition of °C1IX10-'Torr. The bonding strength of the thus obtained bonded body was 9.6 kg/cu+, which was good.
〔実施例２〕
セラミックス基体としてＡｆｆｉ２０３セラミックスを
用い、実施例１と同様な方法で厚さ３００−の銅板を接
合させた。この様にして得られた接合体の接合強度は９
、８ ｋｇ ／ ｃｍと良好であった。[Example 2] Affi203 ceramics was used as the ceramic substrate, and a 300-thick copper plate was joined in the same manner as in Example 1. The bonding strength of the bonded body obtained in this way was 9
, 8 kg/cm, which was good.
（実施例３）
セラミックス基体としてＳｉＣセラミックスを用い、実
施例１と同様な方法でイオンエツチングを行なった後、
投入電力５００ＷにてＣｕの薄膜を５−形成した。しか
る後該薄膜上に厚さ３００−の鉄板を重ね、加熱温度１
２００°Ｃ１Ｉ Ｘｌ０−’Ｔｏｒｒの真空雰囲気の接
合条件で接合させた。この様にして得られた接合体の接
合強度は１０ 、０ ｋｇ ／ ｃｍと良好であった。(Example 3) After performing ion etching in the same manner as in Example 1 using SiC ceramics as the ceramic substrate,
A thin Cu film was formed at an input power of 500 W. After that, a 300-thick iron plate was placed on top of the thin film, and the heating temperature was 1.
The bonding was performed under the vacuum atmosphere bonding conditions of 200°C1IX10-'Torr. The bonding strength of the thus obtained bonded body was as good as 10.0 kg/cm.
〔比較例１〕
セラミックス基体としてＡ４２Ｎセラミツクスを用い、
スパッタ装置内でＡｒガス圧５ Ｘ １０− ”Ｔｏｒ
ｒ。[Comparative Example 1] Using A42N ceramics as the ceramic base,
Ar gas pressure was set at 5 x 10-” Tor in the sputtering equipment.
r.
投入電力９００ＷでＴｉのｙｉ膜を５４形成した。しか
る後該薄膜上に厚さ３００−の銅板を重ね、加熱温度１
０００’Ｃ１Ｉ Ｘｌ０−’Ｔｏｒｒの真空雰囲気の接
合条件で接合させた。この様にして得られた接合体の接
合強度は１ 、６ ｋｇ ／ ｃｒａと低かった。54 yi films of Ti were formed with an input power of 900 W. After that, a 300-thick copper plate was placed on top of the thin film, and the heating temperature was 1.
The bonding was performed under a vacuum atmosphere bonding condition of 000'C1IX10-'Torr. The bonding strength of the bonded body thus obtained was as low as 1.6 kg/cra.
〔比較例２〕
セラミックス基体として／１２ｃｈセラミックスを用い
、比較例１と同様な方法で厚さ３００−の銅板を接合さ
せた。この様にして得られた接合体の接合強度は５．８
ｋｇ／ｃ＋ａと低かった。[Comparative Example 2] A 300-thick copper plate was bonded in the same manner as in Comparative Example 1 using /12ch ceramic as a ceramic substrate. The bonding strength of the bonded body obtained in this way was 5.8
It was as low as kg/c+a.
〔比較例３〕
セラミックス基体としてＳｉＣセラミ・νクスを用い、
比較例１と同様な方法でＴｉの薄膜を５−形成した後、
該ｆ３１ｉ膜上に厚さ３００μの鉄板を重ね、加熱温度
１２００’ｃ、Ｉ Ｘｌ０−’Ｔｏｒｒの真空雰囲気の
接合条件で接合させた。この様にして得られた接合体の
接合強度は１ 、８ ｋｇ ／ ｃ＋ｓと低かった。[Comparative Example 3] Using SiC ceramic νx as the ceramic substrate,
After forming a Ti thin film in the same manner as in Comparative Example 1,
An iron plate having a thickness of 300 μm was placed on the f31i film, and bonding was performed under the following bonding conditions: a heating temperature of 1200° C. and a vacuum atmosphere of I Xl0 −′ Torr. The bonding strength of the bonded body thus obtained was as low as 1.8 kg/c+s.
以上の様に本発明は、セラミックス基体上に金属部材を
、従来よりも強固な接合強度をもって接合せしめること
が出来るという工業上顕著な効果を奏するものである。As described above, the present invention has an industrially significant effect in that it is possible to bond a metal member onto a ceramic substrate with stronger bonding strength than before.
Claims (6)
後、金属の薄膜を気相成長法により形成し、該薄膜を介
してセラミックス基体上に所望の金属部材を熱的又は機
械的手段により接合することを特徴とする金属部材をセ
ラミックス基体に接合する方法。(1) After physically etching the surface of the ceramic substrate, a thin metal film is formed by vapor phase growth, and a desired metal member is bonded onto the ceramic substrate via the thin film by thermal or mechanical means. A method for bonding a metal member to a ceramic substrate, characterized by:
特徴とする特許請求の範囲第１項記載の金属部材をセラ
ミックス基体に接合する方法。(2) A method for joining a metal member to a ceramic substrate according to claim 1, which comprises physically etching with ions or electrons.
プレーティング法、ＣＶＤ法、ＩＶＤ法の内いずれか１
種の方法を用いることを特徴とする特許請求の範囲第１
項記載の金属部材をセラミックス基体に接合する方法。(3) As a vapor phase growth method, any one of sputtering method, vapor deposition method, ion plating method, CVD method, and IVD method
Claim 1 characterized in that a seed method is used.
A method for joining the metal member described in Section 1 to a ceramic substrate.
加圧、電圧印加の内いずれか１種、又は２種以上の手段
を組合わせて用いることを特徴とする特許請求の範囲第
１項記載の金属部材をセラミックス基体に接合する方法
。(4) As thermal or mechanical means, heating, brazing,
A method for joining a metal member to a ceramic substrate according to claim 1, characterized in that one of pressurization and voltage application, or a combination of two or more of them, is used.
か１種の金属薄膜を用いることを特徴とする特許請求の
範囲第１項記載の金属部材をセラミックス基体に接合す
る方法。(5) A method for joining a metal member to a ceramic substrate according to claim 1, characterized in that the metal thin film is one of Al, Cu, and Fe.
れか１種の部材であることを特徴とする特許請求の範囲
第１項記載のセラミックス基体と金属部材との接合方法
。(6) The method of joining a ceramic substrate and a metal member according to claim 1, wherein the metal member is any one of Fe-based, Cu-based, and Al-based members.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7384587A JPS63239174A (en) | 1987-03-27 | 1987-03-27 | Method of joining metal member to ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7384587A JPS63239174A (en) | 1987-03-27 | 1987-03-27 | Method of joining metal member to ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63239174A true JPS63239174A (en) | 1988-10-05 |
Family
ID=13529884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7384587A Pending JPS63239174A (en) | 1987-03-27 | 1987-03-27 | Method of joining metal member to ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63239174A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012044188A (en) * | 2004-02-16 | 2012-03-01 | Bondtech Inc | Connection method |
-
1987
- 1987-03-27 JP JP7384587A patent/JPS63239174A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012044188A (en) * | 2004-02-16 | 2012-03-01 | Bondtech Inc | Connection method |
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