JPS63237208A - Perpendicular magnetic recording medium - Google Patents
Perpendicular magnetic recording mediumInfo
- Publication number
- JPS63237208A JPS63237208A JP6810187A JP6810187A JPS63237208A JP S63237208 A JPS63237208 A JP S63237208A JP 6810187 A JP6810187 A JP 6810187A JP 6810187 A JP6810187 A JP 6810187A JP S63237208 A JPS63237208 A JP S63237208A
- Authority
- JP
- Japan
- Prior art keywords
- carbide
- carbon
- substrate
- perpendicular magnetic
- magnetic recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229920000642 polymer Polymers 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract 4
- 239000000956 alloy Substances 0.000 claims abstract 4
- 229910000599 Cr alloy Inorganic materials 0.000 abstract description 9
- 229920001721 polyimide Polymers 0.000 abstract description 6
- 239000004642 Polyimide Substances 0.000 abstract description 4
- 229910002056 binary alloy Inorganic materials 0.000 abstract description 3
- 239000006229 carbon black Substances 0.000 abstract description 3
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 2
- 239000010439 graphite Substances 0.000 abstract description 2
- 229910052735 hafnium Inorganic materials 0.000 abstract description 2
- 229910052748 manganese Inorganic materials 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 229920000728 polyester Polymers 0.000 abstract description 2
- 229910052727 yttrium Inorganic materials 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract 3
- 229910052702 rhenium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 239000011651 chromium Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000005477 sputtering target Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910001567 cementite Inorganic materials 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は垂直磁気特性に優れたCo−Cr系の垂直磁気
記録媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a Co--Cr based perpendicular magnetic recording medium having excellent perpendicular magnetic properties.
高密度磁気記録媒体として、Co−Cr系合金をスパッ
タリングした垂直磁気記録媒体が優れていることが知ら
れている。Co−Cr系合金は六方晶の結晶構造を有し
、スパッタリング法によりそのC軸が基板面に垂直に配
向した膜が生成することから垂直磁気記録媒体として優
れている。理想的にはC軸が基板面に完全に垂直に配向
していることが望まれるが、現実には配向は完全ではな
く、垂直方向を中心に分布をもつ。この分布はX線回折
における(001.)面のロッキング曲線の形によって
測定することができ、ロッキング曲線の半値巾Δθ、。It is known that perpendicular magnetic recording media made of sputtered Co-Cr alloys are excellent as high-density magnetic recording media. Co--Cr alloys have a hexagonal crystal structure and are excellent as perpendicular magnetic recording media because they produce a film in which the C-axis is oriented perpendicular to the substrate surface by sputtering. Ideally, it is desired that the C-axis be oriented completely perpendicular to the substrate surface, but in reality, the orientation is not perfect and has a distribution centered on the perpendicular direction. This distribution can be measured by the shape of the rocking curve of the (001.) plane in X-ray diffraction, and the half-value width Δθ of the rocking curve.
により判定できる。It can be determined by
Co−Cr膜の垂直配向性を向上させる方法として、C
o−Cr膜中に微量の炭素を混入することが行われてい
る。磁化膜中に微量の炭素を混入する方法としては、ス
パッタリンガス中に炭素化合物のガスを混入するかある
いはスパッタリングターゲット中に炭素を混入すること
が一般に行われている。しかし、炭素化合物のガスを混
入する方法では炭素以外に水素又は酸素等の元素が混入
し、垂直磁気特性が損なわれたりするという欠点がある
。又、スパッタリングターゲット中に炭素を混入する方
法では特別に炭素入りのスパッタリングターゲットを作
製する必要があり、又、スパッタリングターゲット上に
炭素のペレット等を置く方法では炭素の混入が均一に行
われ難いという欠点がある。As a method to improve the vertical alignment of a Co-Cr film, C
A trace amount of carbon is mixed into the o-Cr film. As a method of mixing a small amount of carbon into a magnetized film, it is generally practiced to mix a carbon compound gas into sputtering gas or into a sputtering target. However, the method of mixing a carbon compound gas has the drawback that elements such as hydrogen or oxygen are mixed in in addition to carbon, and the perpendicular magnetic properties may be impaired. In addition, the method of mixing carbon into the sputtering target requires the creation of a special sputtering target containing carbon, and the method of placing carbon pellets etc. on the sputtering target makes it difficult to mix carbon uniformly. There are drawbacks.
本発明はこのような問題点を解決するもので、炭素又は
金属炭化物を含有する高分子成形物の基板と、該基板上
にスパッタリング法により形成されたCo−Cr系合金
層とからなることを特徴とする垂直磁気記録媒体に関す
るものである。The present invention solves these problems and consists of a substrate of a polymer molded material containing carbon or metal carbide, and a Co-Cr alloy layer formed on the substrate by a sputtering method. The present invention relates to a characteristic perpendicular magnetic recording medium.
本発明によれば、磁化膜中に微量の炭素を安定的に混入
することにより、垂直磁気特性に優れた垂直磁気記録媒
体を得ることができる。スパッタリング法はプラズマ雰
囲気中でターゲット原子がスパッタされることにより基
板上に薄膜が形成されるが、その際基板表面も原子の衝
撃を受け、ある程度スパッタされるのと同様な現象が起
こると考えられる。本発明はこの現象を利用するもので
、基板中に混入した炭素又は炭化物がスパッタされるこ
とにより、磁化膜中に炭素が混入されることを特徴とす
る。According to the present invention, a perpendicular magnetic recording medium with excellent perpendicular magnetic properties can be obtained by stably incorporating a small amount of carbon into a magnetized film. In the sputtering method, a thin film is formed on a substrate by sputtering target atoms in a plasma atmosphere. At this time, the surface of the substrate is also bombarded by atoms, and it is thought that a phenomenon similar to sputtering occurs to some extent. . The present invention utilizes this phenomenon, and is characterized in that carbon or carbide mixed into the substrate is sputtered to mix carbon into the magnetized film.
本発明で使用される炭素としてはカーボンブラック、グ
ラファイト、また金属炭化物としては、炭化チタン、炭
化ケイ素、炭化アルミニウム、炭化ジルコニウム、炭化
クロム、炭化タングステン、炭化鉄等を挙げることがで
きる。その形状は粉末が最も好ましいが、他の形状であ
ってもかまわない。炭素又は金属炭化物の使用量は、高
分子成形物の基板に対して1〜20wt%が好適である
。Examples of carbon used in the present invention include carbon black and graphite, and examples of metal carbides include titanium carbide, silicon carbide, aluminum carbide, zirconium carbide, chromium carbide, tungsten carbide, and iron carbide. The most preferable shape is powder, but other shapes are also possible. The amount of carbon or metal carbide used is preferably 1 to 20 wt% based on the substrate of the polymer molded product.
本発明で使用される高分子成形物としては、ポリイミド
、ポリエステル等を挙げることができる。Examples of the polymer molded product used in the present invention include polyimide and polyester.
本発明のCo−Cr系合金層としては、従来公知Co含
有量が70〜90原子%、Cr含有量が10〜30原子
%であるCo−Crの二元系合金、或いは前記二元系に
WSRe、Hf、Y、Mo、Ni、■、Cu、Mn等の
少なくとも1種を1〜10原子%添加した系を挙げるこ
とができる。The Co-Cr alloy layer of the present invention may be a conventionally known Co-Cr binary alloy having a Co content of 70 to 90 at% and a Cr content of 10 to 30 at%, or a Co-Cr alloy having a Co-Cr content of 10 to 30 at%, or the above binary alloy. Examples include systems in which 1 to 10 atomic % of at least one of WSRe, Hf, Y, Mo, Ni, ■, Cu, Mn, etc. is added.
以下に実施例及び比較例を示し、本発明を更に詳しく説
明する。EXAMPLES The present invention will be explained in more detail by showing Examples and Comparative Examples below.
実施例1
ジカルボン酸無水物とジアミンとからなるポリイミドモ
ノマー溶液に平均粒径0.03μmのカーボンブラック
粉末を5wt%混入し、ガラス基板上に流延したのち加
熱してイミド化反応を行い、厚さ約50μmのポリイミ
ドフィルムを作成した。Example 1 5 wt % of carbon black powder with an average particle size of 0.03 μm was mixed into a polyimide monomer solution consisting of dicarboxylic acid anhydride and diamine, and the mixture was cast onto a glass substrate and heated to perform an imidization reaction, resulting in a thick film. A polyimide film with a thickness of approximately 50 μm was prepared.
これを基板とし、その表面にCo−Cr合金(Cr含有
率20wt%)をスパッタし、厚さ約0.3μmの薄膜
Aを形成した。This was used as a substrate, and a Co--Cr alloy (Cr content: 20 wt%) was sputtered on the surface thereof to form a thin film A having a thickness of about 0.3 μm.
スパッタリング条件
装 置 マグネトロン式高周波スパッタリング
装W(二極平行平板型)
ターゲット Co−Cr合金(22原子%Cr)直
径6インチ 厚さ5mm
スパッタガス Ar 圧力0.5 P a基板の前
処理 真空中380°Cで2時間スパッタ電力 1
.5kV 60m1nスパツタ基板温度 水冷
実施例2
実施例1で用いたポリイミドモノマー溶液に平均粒径0
.05μmの炭化ケイ素粉末を10wt%混入し、実施
例1と同様にしてポリイミドフィルムを作成した。これ
を基板とし、実施例1と同様にして厚さ0.3μmの薄
膜Bを作成した。Sputtering conditions Equipment Magnetron type high frequency sputtering equipment W (dual parallel plate type) Target Co-Cr alloy (22 atomic% Cr) diameter 6 inches Thickness 5 mm Sputtering gas Ar Pressure 0.5 Pa Pretreatment of substrate 380 mm in vacuum Sputter power 1 for 2 hours at °C
.. 5kV 60m1n sputtering substrate temperature Water cooling Example 2 The polyimide monomer solution used in Example 1 had an average particle size of 0.
.. A polyimide film was prepared in the same manner as in Example 1 except that 10 wt % of silicon carbide powder with a diameter of 0.05 μm was mixed therein. Using this as a substrate, a thin film B having a thickness of 0.3 μm was created in the same manner as in Example 1.
比較例1
炭素粉末を混入しなかった以外は実施例1と同様な方法
により厚さ約0.3μmの薄膜Cを形成した。Comparative Example 1 A thin film C having a thickness of about 0.3 μm was formed in the same manner as in Example 1 except that carbon powder was not mixed.
実施例1及び比較例1で得られた各磁化膜中の炭素の分
布状態を二次イオン質量分析により分析した。その結果
を第1図に示す。比較例1の炭素を含まない基板の場合
、磁化膜中にはほとんど炭素は存在しない。これに対し
て炭素粉末入り基板の場合、磁化膜中の基板付近には基
板内と同程度の量の炭素が存在し、その量は表面に近づ
くにつれて次第に減少するが、表面付近まで分布してい
ることがわかる。The distribution state of carbon in each magnetized film obtained in Example 1 and Comparative Example 1 was analyzed by secondary ion mass spectrometry. The results are shown in FIG. In the case of the carbon-free substrate of Comparative Example 1, almost no carbon exists in the magnetized film. On the other hand, in the case of a substrate containing carbon powder, there is a similar amount of carbon in the magnetized film near the substrate as in the substrate, and the amount gradually decreases as it approaches the surface, but it is not distributed near the surface. I know that there is.
Co−Cr系合金薄膜は2θ=44’付近に(OO2)
回折を示す。この回折位置におけるロッキング曲線を第
2図〜第4図に示す。、比較例1の炭素を含まない基板
の場合、ロッキング曲線の半値巾Δθ5゜は6.7°と
大きく垂直配向性は悪い。Co-Cr alloy thin film is near 2θ=44' (OO2)
Shows diffraction. Rocking curves at this diffraction position are shown in FIGS. 2 to 4. In the case of the carbon-free substrate of Comparative Example 1, the half-value width Δθ5° of the rocking curve was as large as 6.7°, and the vertical alignment was poor.
これに対して炭素粉末入り基板の場合、実施例1ではΔ
θ、。=3.2°、実施例2ではΔθ、。=4.0°と
極めて垂直配向性に優れている。On the other hand, in the case of a substrate containing carbon powder, in Example 1, Δ
θ,. =3.2°, Δθ in Example 2. =4.0°, which shows extremely excellent vertical alignment.
本発明によれば垂直磁気特性に優れたCo−Cr系の垂
直磁気記録媒体を得ることができる。According to the present invention, a Co--Cr-based perpendicular magnetic recording medium with excellent perpendicular magnetic properties can be obtained.
第1図は実施例1、実施例2及び比較例1で得られた各
磁化膜中の炭素の分布状態を二次イオン質量分析法によ
り分析した結果を示す図である。
第2図〜第4図は実施例1、実施例2及び比較例1で得
られた各磁化膜のX線回折ロッキング曲線を示すグラフ
図である。
特許出願人 宇部興産株式会社
第1図
Q +0 20 30 40 50 60工・ソチ
ンデa奇問Cり
第 2 図FIG. 1 is a diagram showing the results of analyzing the carbon distribution state in each magnetized film obtained in Example 1, Example 2, and Comparative Example 1 by secondary ion mass spectrometry. 2 to 4 are graphs showing the X-ray diffraction rocking curves of each magnetized film obtained in Example 1, Example 2, and Comparative Example 1. Patent Applicant Ube Industries Co., Ltd. Figure 1
Claims (1)
該基板上にスパッタリング法により形成されたCo−C
r系合金層とからなることを特徴とする垂直磁気記録媒
体。A substrate of a polymer molded product containing carbon or metal carbide;
Co-C formed on the substrate by sputtering method
1. A perpendicular magnetic recording medium comprising an r-based alloy layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6810187A JPS63237208A (en) | 1987-03-24 | 1987-03-24 | Perpendicular magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6810187A JPS63237208A (en) | 1987-03-24 | 1987-03-24 | Perpendicular magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63237208A true JPS63237208A (en) | 1988-10-03 |
Family
ID=13364011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6810187A Pending JPS63237208A (en) | 1987-03-24 | 1987-03-24 | Perpendicular magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63237208A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02141920A (en) * | 1988-11-22 | 1990-05-31 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
JPH05210834A (en) * | 1992-01-30 | 1993-08-20 | Victor Co Of Japan Ltd | Magnetic recording medium |
JP4531331B2 (en) * | 2000-05-31 | 2010-08-25 | 高橋 研 | Magnetic thin film, manufacturing method thereof, evaluation method thereof, magnetic head using the same, magnetic recording apparatus and magnetic device |
-
1987
- 1987-03-24 JP JP6810187A patent/JPS63237208A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02141920A (en) * | 1988-11-22 | 1990-05-31 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
JPH05210834A (en) * | 1992-01-30 | 1993-08-20 | Victor Co Of Japan Ltd | Magnetic recording medium |
JP4531331B2 (en) * | 2000-05-31 | 2010-08-25 | 高橋 研 | Magnetic thin film, manufacturing method thereof, evaluation method thereof, magnetic head using the same, magnetic recording apparatus and magnetic device |
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