JPS63236562A - Formation of lb membranes - Google Patents
Formation of lb membranesInfo
- Publication number
- JPS63236562A JPS63236562A JP62069212A JP6921287A JPS63236562A JP S63236562 A JPS63236562 A JP S63236562A JP 62069212 A JP62069212 A JP 62069212A JP 6921287 A JP6921287 A JP 6921287A JP S63236562 A JPS63236562 A JP S63236562A
- Authority
- JP
- Japan
- Prior art keywords
- membrane
- film
- substrate
- membranes
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012528 membrane Substances 0.000 title abstract description 16
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 230000007547 defect Effects 0.000 abstract description 6
- 230000006378 damage Effects 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 210000004379 membrane Anatomy 0.000 description 7
- 210000004303 peritoneum Anatomy 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ラングミュア・ブロジェット（ＬＢ）膜の形
成方法に関する。本発明の方法により、膜欠陥の極めて
少ないＬＢ膜が得られる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a Langmuir-Blodgett (LB) film. By the method of the present invention, an LB film with extremely few film defects can be obtained.
ＬＢ膜の形成は、いわゆるＬＢ法により、化合物分子の
単分子膜を水面上に形成せし゛め、これを基板表面に付
着せしめつつ水面から引き上げることにより行われる。The LB film is formed by forming a monomolecular film of compound molecules on the water surface by the so-called LB method, and then lifting the film from the water surface while adhering it to the substrate surface.
しかるに、このような従来のＬＢ膜形成方法により得ら
れるＬＢ膜においては、ピンホールや膜破れ等の膜欠陥
が多発するという問題があり、均質な膜を得ることは困
難である。However, in the LB film obtained by such a conventional LB film forming method, there is a problem that film defects such as pinholes and film tears occur frequently, and it is difficult to obtain a homogeneous film.
本発明の、上述の如き従来技術の問題点を解決しようと
するものであり、膜欠陥の極めて少ないＬＢ膜を形成す
ることのできる方法を提供しようとするものである。The present invention aims to solve the problems of the prior art as described above, and provides a method that can form an LB film with extremely few film defects.
本発明によれば即ちＬＢ法により化合物分子の単分子膜
を基板上に形成する方法が提供されるのであって、この
方法は、化合物分子の単分子膜を基板に付着させて水面
から引き上げるときに直接または間接に加熱することを
特徴とする。According to the present invention, there is provided a method for forming a monomolecular film of compound molecules on a substrate by the LB method, and this method involves attaching a monomolecular film of compound molecules to a substrate and lifting it from the water surface. It is characterized by heating directly or indirectly.
前述した従来技術における穴あきや膜破れの原因の１つ
は、膜に混入してくる水の作用である。One of the causes of holes and membrane breakage in the prior art described above is the effect of water entering the membrane.
即ち、多層に形成したＬＢ腹膜中含まれる水が、ＬＢ膜
形成後の処理であるアニールや真空もしくはデシケータ
による乾燥の過程において、弱い分子間力でしか引き合
っていないＬＢ膜形成分子間の保合を破壊しながら、Ｌ
Ｂ腹膜中り外部へと雛脱し、このため穴あきや膜破れが
生ずるのである。In other words, the water contained in the multi-layered LB peritoneum is held together by the molecules forming the LB film, which are attracted only by weak intermolecular forces during annealing and drying using a vacuum or desiccator, which are treatments after forming the LB film. While destroying L.
B. The chicks escape from the peritoneum to the outside, resulting in perforations and membrane tears.
しかして、本発明においては、上記の問題を解決するた
めに、水面からＬＢ膜を引き上げる毎に、Ｌ Ｂ膜を加
熱し、これによってＬＢ腹膜中混入してくる水を、ＬＢ
膜自体の破壊を最少水に押さえながら、ＬＢ腹膜中り排
除するのである。この処理により、ＬＢ膜形成後の乾燥
処理工程において生ずるＬＢ膜の穴あきや破れ等の膜欠
陥を減少させ、従来法により得られる！、 Ｂ ＩＩ！
よりも良質のＬＢ膜を得るのである。However, in the present invention, in order to solve the above problem, the LB membrane is heated every time the LB membrane is lifted from the water surface, thereby removing the water mixed into the LB peritoneum.
The LB peritoneum is expelled while minimizing the destruction of the membrane itself. This treatment reduces film defects such as holes and tears in the LB film that occur during the drying process after forming the LB film, and can be obtained using conventional methods! , B II!
This results in a better quality LB film.
ＬＢ膜を加熱する手段としては赤外光を用いるのが好ま
しい。しかし、加熱は基板をヒータで加熱することによ
り間接的に行ってもよい。赤外光により直接加熱する方
法では、パルス照射により不必要な加熱、特に基板加熱
を避けることができるという利点がある。基板自体の温
度を上げすぎると、基板が放熱して水温に近いレベルに
温度が下がるまで、次のＬＢ膜の積層を持たなければな
らないという不都合がある。It is preferable to use infrared light as a means for heating the LB film. However, heating may be performed indirectly by heating the substrate with a heater. The method of direct heating with infrared light has the advantage that unnecessary heating, especially substrate heating, can be avoided by pulse irradiation. If the temperature of the substrate itself is raised too much, there is a disadvantage that the next LB film must be stacked until the substrate dissipates heat and the temperature drops to a level close to water temperature.
本発明の実施例を、添付の図面を参照しながら、以下に
説明する。Embodiments of the invention will now be described with reference to the accompanying drawings.
基板ｌ （例えば、３１％石英、ＣａＡｓ、 ＩＴＯ）
上にＬＢ膜２を形成する。この際、基板の引き上げ操作
時に、すでに水面３より上に引き上げられた部分のＬＢ
膜に赤外光を照射する（第１図）。このとき、基板表面
温度が８０℃以上になるまで赤外加熱する。一方、次の
ＬＢ膜の積層のために基板を押し下げる際には加熱を行
わない。しかして、これらの操作を繰り返すことにより
、■、Ｂ膜を多層に形成することができる。赤外加熱は
、ＬＢ膜を水面から引き上げつつ行ってもよく （第２
図）、あるいはＬＢ膜を水面から引き上げた後に行って
もよいく第３図〉。尚、図示されていないけれども、こ
の場合、基板の裏面にもＬＢ膜が形成されることが多い
。Substrate (e.g. 31% quartz, CaAs, ITO)
An LB film 2 is formed thereon. At this time, when the board is pulled up, the LB of the part that has already been pulled up above the water surface 3
The film is irradiated with infrared light (Figure 1). At this time, infrared heating is performed until the substrate surface temperature reaches 80° C. or higher. On the other hand, no heating is performed when pressing down the substrate for laminating the next LB film. By repeating these operations, it is possible to form multilayer films 1 and B. Infrared heating may be performed while lifting the LB film from the water surface (Second
(Fig. 3), or after the LB membrane is lifted from the water surface (Fig. 3). Although not shown, in this case, an LB film is often formed also on the back surface of the substrate.
赤外光による加熱は、基板自体の温度上昇を押さえ、ま
たＬＢ膜の破壊を防止することを目的として、基板表面
温度がＬＢ膜形成分子の融点以上にならないように、パ
ルス的に照射を行うのがよい。Heating with infrared light is irradiated in pulses so that the substrate surface temperature does not exceed the melting point of the molecules forming the LB film, with the aim of suppressing the temperature rise of the substrate itself and preventing destruction of the LB film. It is better.
さらに具体的には、本発明の方法は、例えば、下記のよ
うにして行うことができる。More specifically, the method of the present invention can be performed, for example, as follows.
（１）基板として疎水性Ｓｉウェハーを用いる。(1) A hydrophobic Si wafer is used as the substrate.
（２）ＬＢ膜形成用分子としてアラキン酸、ＣＨＩ （
ＣＨ２） ＋ 、１ＣＯＯＩＩ、を用いる。(2) Arachic acid, CHI (
CH2) + , 1COOII is used.
（３）ＬＢ膜を、上述の方法により、水面からの引き上
げ時にあるいは引き上げ後に赤外光照射を行い、形成す
る。(3) The LB film is formed by irradiating infrared light during or after lifting from the water surface using the method described above.
（４）膜は、所望により、２〜２０層形成する。(4) 2 to 20 layers of the film are formed, if desired.
（５）形成後、デシケータ中で乾燥処理を行う。(5) After formation, drying is performed in a desiccator.
得られた膜の膜質を評価は、ＬＢ膜上に蒸着法によりＡ
Ｉ膜を形成し、基板とＡ１との間のり−ク電流をみるこ
とにより行うことができる。The film quality of the obtained film was evaluated using the vapor deposition method on the LB film.
This can be done by forming an I film and observing the leakage current between the substrate and A1.
本発明によれば、膜欠陥の極めて少ないＬＢ膜を形成す
ることができる。According to the present invention, an LB film with extremely few film defects can be formed.
第１２および３図は、それぞれ、本発明方法の実施例を
説明するための図である。
ｌ・・・基板、 ２・・・ＬＢ膜、３・・・
水面。12 and 3 are diagrams for explaining an embodiment of the method of the present invention, respectively. l...Substrate, 2...LB film, 3...
water surface.
Claims (1)
単分子膜を基板上に形成するに際して、この単分子膜を
基板に付着させて水面から引き上げるときに直接または
間接に加熱することを特徴とする、ラングミュア・ブロ
ジェット膜の形成方法。1. When forming a monomolecular film of compound molecules on a substrate by the Langmuir-Blodgett method, the Langmuir method is characterized in that the monomolecular film is heated directly or indirectly when it is attached to the substrate and lifted from the water surface.・Method for forming Blodgett film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62069212A JPS63236562A (en) | 1987-03-25 | 1987-03-25 | Formation of lb membranes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62069212A JPS63236562A (en) | 1987-03-25 | 1987-03-25 | Formation of lb membranes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63236562A true JPS63236562A (en) | 1988-10-03 |
Family
ID=13396187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62069212A Pending JPS63236562A (en) | 1987-03-25 | 1987-03-25 | Formation of lb membranes |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63236562A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006517463A (en) * | 2003-02-11 | 2006-07-27 | プリンストン ユニヴァーシティ | Monolayer using organic acid bonded to the surface |
-
1987
- 1987-03-25 JP JP62069212A patent/JPS63236562A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006517463A (en) * | 2003-02-11 | 2006-07-27 | プリンストン ユニヴァーシティ | Monolayer using organic acid bonded to the surface |
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