JPS63232430A - Development of resist - Google Patents
Development of resistInfo
- Publication number
- JPS63232430A JPS63232430A JP6606387A JP6606387A JPS63232430A JP S63232430 A JPS63232430 A JP S63232430A JP 6606387 A JP6606387 A JP 6606387A JP 6606387 A JP6606387 A JP 6606387A JP S63232430 A JPS63232430 A JP S63232430A
- Authority
- JP
- Japan
- Prior art keywords
- developer
- resist
- photoresist
- patterning
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- 238000000059 patterning Methods 0.000 claims abstract description 10
- 229920003986 novolac Polymers 0.000 claims abstract description 3
- 229920005989 resin Polymers 0.000 claims abstract description 3
- 239000011347 resin Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000003513 alkali Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 4
- 238000007865 diluting Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明のレジストの現像方法は、レジスト現像液を従来
濃度より希釈することにより、レジストのパターンニン
グ特性の向上を図ったものである。DETAILED DESCRIPTION OF THE INVENTION [Summary] The resist developing method of the present invention aims to improve the patterning characteristics of the resist by diluting the resist developer solution from a conventional concentration.
本発明はレジストの現像方法に関するものである。更に
詳しく言えばレジスト現像液の希釈濃度に関するもので
ある。The present invention relates to a resist developing method. More specifically, it relates to the dilution concentration of the resist developer.
レジスト現像液の濃度は、感度、残膜率プロファイル、
パターニング形成時間等の点より決定されていた。The concentration of the resist developer depends on the sensitivity, residual film rate profile,
It was determined based on the patterning time and other factors.
しかし従来のレジスト現像液の濃度では、ネガ型に比べ
微細なパターニングが可能なポジ型を用いた場合にも、
１．０ ｐｍ程度の加工精度しかなかった。However, with the concentration of conventional resist developer, even when using a positive type, which allows for finer patterning than a negative type,
The machining accuracy was only about 1.0 pm.
ところで、半導体装置は、更に高′！Ｅ度化が要求され
ており、かかる１、０ ＪＬｍ程度の加工精度では２５
６キロビツトダイナミツクＲＡＭ級程度の装造にしか適
用できない。By the way, semiconductor devices are even more expensive! E degree is required, and the machining accuracy of about 1.0 JLm is 25
It can only be applied to a 6 kilobit dynamic RAM class structure.
４メガビツトが要請されている最近では、加工精度を０
．８４ｍ以上に向上させる必要がある。Nowadays, 4 megabits is required, and processing accuracy is reduced to 0.
．． It is necessary to increase the height to 84m or more.
本発明はかかる従来の問題点に鑑みて創作されたもので
あり、露光装置の解像性能を有効に引き出し、パターニ
ング特性を向上させることのできるレジストの現像方法
を提供することを目的とする。The present invention was created in view of these conventional problems, and it is an object of the present invention to provide a resist developing method that can effectively bring out the resolution performance of an exposure apparatus and improve patterning characteristics.
本発明のレジストの現像方法は、７オトレジストのパタ
ーニングに用いられるレジスト現像液を従来濃度より希
釈することを特徴とする。The resist developing method of the present invention is characterized in that the resist developer used for patterning the 7-oto-resist is diluted from a conventional concentration.
そしてフォトレジストがポジ型であり、レジスト現像液
がポジ型アルカリ現像液である場合において、該現像液
を（１１１５Ｎより濃く，０，１５Ｎより薄くなるよう
に希釈することが好ましい。When the photoresist is a positive type and the resist developer is a positive alkaline developer, it is preferable to dilute the developer so that it is thicker than 1115N and thinner than 0.15N.
更に、前記フォトレジストが７ポラツク樹脂であること
が好ましい。Furthermore, it is preferable that the photoresist is a 7-pork resin.
本発明は、フォトレジストのパターニングに用いられる
レジスト現像液を従来濃度より希釈することにより加工
精度の向上を図ることができる。The present invention can improve processing accuracy by diluting the resist developer used for patterning photoresist from a conventional concentration.
次に本発明を具体的に説明するために、以下に実施例を
挙げる。Next, in order to specifically explain the present invention, examples are given below.
ウェハー上にレジストとしてノボラックＭ４Ｗ１゜ＮＭ
Ｒ８２０を０．８ ＪＬｍ厚に塗布した後、０．Ｂ。Novolac M4W1°NM as a resist on the wafer
After applying R820 to a thickness of 0.8 JLm, 0.8 JLm thickness was applied. B.
０．７ 、０．９ 、１．０７ｔｍの線幅を有するマス
クのパターンに従い露光する。露光後、ポジ型フォトレ
ジスト・アルカリ現像液（ＴＭＡＨＯ水溶液（テトラメ
チルアンモニウムハイドロオキサイド、すなわち（ＣＨ
３）Ｊ”０Ｈ−） ）を０．１１５ Ｎ 、 ０．１２
５ Ｎ 。Exposure is performed according to a mask pattern having line widths of 0.7 tm, 0.9 tm, and 1.07 tm. After exposure, a positive photoresist alkaline developer (TMAHO aqueous solution (tetramethylammonium hydroxide, i.e. (CH
3) J"0H-)) 0.115 N, 0.12
5 N.
０．１４Ｎ 、 ０．１８Ｎに希釈したものを用いて現
像を行なった。なおこの現像液は、従来０．１５Ｎ〜０
．１８Ｎの濃度で用いられたものである。Development was carried out using diluted solutions of 0.14N and 0.18N. Note that this developer is conventionally 0.15N to 0.
．． It was used at a concentration of 18N.
第１図（ａ）はディフォーカス０．０ ｐｍにおける現
像液０．１２５ Ｎ現像液を用いた場合の基準エネルギ
ーと線幅との関係を示す図〒あり、各基準エネルギー奄
横輌に、ウェハー上に描かれたパターンの線幅を縦軸に
示している。Figure 1(a) is a diagram showing the relationship between the reference energy and line width when using a 0.125 N developer at a defocus of 0.0 pm. The line width of the pattern drawn above is shown on the vertical axis.
同様に、第１図（ｂ）はディフォーカスＯ，Ｑ ４ｍに
おける現像液０．１４０ Ｎ現像液を用いた場合の基準
エネルギーと線幅との関係を示す図である。Similarly, FIG. 1(b) is a diagram showing the relationship between reference energy and line width when using a 0.140 N developer at defocus O, Q 4m.
第２図は、現像液の各濃度と解像度Ｒ８およびＫｅ と
の関係を示す図である。この場合には、０．１２５ Ｎ
、 ０．１４０ Ｎの他、０．１１５ Ｎ 、 ０．
１８０ Ｎについても示している。FIG. 2 is a diagram showing the relationship between each concentration of the developer and the resolution R8 and Ke. In this case, 0.125 N
, 0.140 N, 0.115 N, 0.
180N is also shown.
ここでＲｅは主１゜０４ｍのディフォーカス、±５％露
光量変化に対して、そのレジスト幅の変動が主０゜０５
ｐｍを越えない最小ラインおよびスペースパターンを示
すものであり、以下の式によって表わされる。Here, Re is the main defocus of 1°04m, and the fluctuation of the resist width is mainly 0°05 for a ±5% exposure change.
It indicates the minimum line and space pattern that does not exceed pm and is expressed by the following equation.
弐〇において、Ｋｅは定数、λは露光に用いる波長、Ｈ
Ａは開口数である。In 2〇, Ke is a constant, λ is the wavelength used for exposure, and H
A is the numerical aperture.
また第２図には、比咬のためにポジ型フォトレジスト・
アルカリ現像液を従来通りＬｉ３Ｎに希釈した場合の測
定結果についても示している（なお希釈率以外について
は実施例と同様の条件で現像を行なっている。）。Figure 2 also shows a positive photoresist for the bite.
Also shown are the measurement results when the alkaline developer was diluted with Li3N as conventionally (the development was carried out under the same conditions as in the example except for the dilution rate).
第２図から明らかなように、 ０．８４ｍ以上の加工精
度が得られるのは、ＮＡが０．３５の場合、レジスト現
像液濃度が大体０．１３Ｎ以下のときである。As is clear from FIG. 2, processing accuracy of 0.84 m or more can be obtained when the NA is 0.35 and the resist developer concentration is about 0.13 N or less.
このように現像液を従来の濃度０．１５Ｎ〜０．１８Ｎ
より希釈することによって４メガビット級のＬＳＩの提
供が可能である。In this way, the developer solution has a conventional concentration of 0.15N to 0.18N.
By further diluting it, it is possible to provide a 4 megabit class LSI.
しかし、現像液を希釈しすぎれば現像が安定せず、実施
例に示した系では、０．１１５ Ｎ以下でその不安定性
が表われた。However, if the developer is diluted too much, the development becomes unstable, and in the system shown in the example, instability appeared at 0.115 N or less.
同様の効果の得られる希釈率は、レジストおよびレジス
ト現像液の種類によって異なり、それぞれの組み合わせ
に応じて決定しなければならない、しかし、従来用いら
れていた濃度より更に希釈すれば、いずれの系において
も加工精度を向上させることができる。The dilution rate at which similar effects can be obtained varies depending on the type of resist and resist developer, and must be determined depending on each combination. It is also possible to improve machining accuracy.
なお現像液濃度を低くすると、一般的に感度が低下する
ので、レジスト膜厚は薄い方が望ましい、また露光装置
の焦点深度を考慮すると、レジス）ＩＩ５Ｉ厚は薄い方
が望ましい、従ってレジスト膜を薄くできる場合、例え
ば三層レジスト法における上層レジストや薄膜レジスト
などに適用すれば特に有効である。Note that when the developer concentration is lowered, the sensitivity generally decreases, so the thinner the resist film is, the better. Considering the depth of focus of the exposure device, the thinner the resist) II5I thickness is. If it can be made thin, it is particularly effective when applied to, for example, an upper layer resist or a thin film resist in a three-layer resist method.
以上説明したように、本発明によれば加工精度を０．８
ｐ、ｍ以上にすることが可渣であり、半導体装置の高
密度化が可能となる。As explained above, according to the present invention, the machining accuracy is 0.8
It is possible to make it more than p and m, and it becomes possible to increase the density of semiconductor devices.
第１図（ａ）はディフォーカス０．０７ｉｍにおける現
像液０．１２５ Ｎ現像液を用いた場合の基準エネルギ
ーと線幅との関係を示す図、
第１図（ｂ）はディフォーカス０．ＯｊＬｍにおける現
像液０．１４０ Ｎ現像液を用いた場合の基準エネルギ
ーと線幅との関係を示す図。
第２図は、現像液の各濃度と解像度ＲｅおよびＫｅ と
の関係を示す図である。
（とＬン
１（遡Ｌｆ−タルべ−ｄ’＆ｎ乙め関イ刀日第１図FIG. 1(a) is a diagram showing the relationship between reference energy and line width when a 0.125 N developer is used at a defocus of 0.07 mm, and FIG. The figure which shows the relationship between the reference energy and line width in the case of using a 0.140N developer at OjLm. FIG. 2 is a diagram showing the relationship between each concentration of the developer and the resolutions Re and Ke. (and Ln 1 (Retrospective Lf-Talbe-d'&n
Claims (2)
うに希釈したアルカリ現像液を用いてポジ型フォトレジ
ストをパターニングすることを特徴とするレジストの現
像方法。(1) A method for developing a resist, which comprises patterning a positive photoresist using an alkaline developer diluted to be thicker than 0.115N and thinner than 0.15N.
を特徴とする特許請求の範囲第１項に記載のレジストの
現像方法。(2) The resist developing method according to claim 1, wherein the photoresist is a novolak resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6606387A JPS63232430A (en) | 1987-03-20 | 1987-03-20 | Development of resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6606387A JPS63232430A (en) | 1987-03-20 | 1987-03-20 | Development of resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63232430A true JPS63232430A (en) | 1988-09-28 |
Family
ID=13305022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6606387A Pending JPS63232430A (en) | 1987-03-20 | 1987-03-20 | Development of resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63232430A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013044809A (en) * | 2011-08-22 | 2013-03-04 | Fujifilm Corp | Method for forming resist pattern, resist pattern, positive resist composition, mold for nano-imprint, and photomask |
| US8968988B2 (en) | 2011-08-22 | 2015-03-03 | Fujifilm Corporation | Resist pattern forming method, resist pattern, crosslinkable negative resist composition, nanoimprint mold and photomask |
-
1987
- 1987-03-20 JP JP6606387A patent/JPS63232430A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013044809A (en) * | 2011-08-22 | 2013-03-04 | Fujifilm Corp | Method for forming resist pattern, resist pattern, positive resist composition, mold for nano-imprint, and photomask |
| US8906600B2 (en) | 2011-08-22 | 2014-12-09 | Fujifilm Corporation | Resist pattern forming method, resist pattern, positive resist composition, nanoimprint mold and photomask |
| US8968988B2 (en) | 2011-08-22 | 2015-03-03 | Fujifilm Corporation | Resist pattern forming method, resist pattern, crosslinkable negative resist composition, nanoimprint mold and photomask |
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