JPS632321A - Pattern lithography - Google Patents

Abstract

PURPOSE:To eliminate the adverse influence of initial mechanical and electrical instability of a lithography equipment to an effective pattern lithography by drawing another pattern except an effective pattern in a region except a region where is drawn the effective pattern is drawn. CONSTITUTION:Before an effective pattern 2 is drawn, a pattern 1A is drawn by a spot scanning and state moving on the basis of EB (electron beam) lithography data at the lower left side corner of the region except the region where the effective pattern 2 of a mask substrate 1 is drawn. Then, a stage which places the substrate 1 is moved substantially in the maximum width of an effective lithography area in an X-direction, and a pattern 2A is drawn on the lower right side corner of the substrate 1. Then, the stage is moved in the maximum width in a y direction, and a pattern 3A is drawn on the upper light side corner of the substrate 1. Then, the pattern 2 is spot scanned and stage moved to draw in a direction of an arrow sequentially at each stripe 5. Thus, the adverse influence of initial mechanical and electrical instability of the EB lithography equipment to the drawing of the pattern 2 can be eliminated.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a pattern drawing method, and more particularly to a pattern drawing method in which a fine pattern is drawn by a drawing device on a photosensitive material coated on a Wlff surface.

[Prior Art] When manufacturing semiconductor integrated circuits, pattern formation is often performed using photolithography technology. recent years,
As the degree of integration of semiconductor integrated circuits increases, there is an increasing demand for improvements in the quality and precision of photomasks used in photolithography, such as pattern accuracy and alignment accuracy, and manufacturing processes are also becoming more complex. . For this reason, microfabrication is easy, and the gi degree is high. An electron beam (EB) lithography system that can create photomasks at five speeds is used.

FIG. 3 is a diagram for explaining a pattern drawing method in the production of a conventional photomask.

In the figure, 100 is a photomask. 1 is a mask substrate on which a photosensitive material is deposited, and 2 is an effective pattern two-dimensionally drawn on the photosensitive material by a spot scanning type EB drawing device. This effective pattern 2 is created by irradiating an electron beam onto the surface of a photosensitive material to form an electron beam spot 3, and by deflecting the electron beam based on EB writing data.
By spot scanning in which the photosensitive material is continuously scanned in the y direction in the stripes 5 of an appropriate width and by mechanically moving the stage (not shown) on which the mask substrate 1 is mounted in the X direction, stripes are sequentially formed. Every 5 is drawn in the direction of the arrow.

[Problems to be Solved by the Invention] By the way, in the pattern writing method using the conventional EB writing apparatus, spot scanning and stage movement may become unstable at the initial #'1st floor of writing the effective pattern 2. In many cases, the initial mechanical and electrical instability of the EB lithography system, such as the inability to properly correct errors in spot scanning, has a negative effect on the lithography of the effective pattern 2. There was a problem with not being able to draw.

This invention was made to solve the above problems! It is an object of the present invention to provide a pattern drawing method that can eliminate the adverse effects of initial d-region and electrical instability of a drawing device on the drawing of effective patterns.

[Means for solving the problems] Pattern drawing method according to the present invention 1. E. Draw this effective pattern before drawing the effective pattern! This is a method of drawing a pattern other than the effective pattern in ml other than the l area.

[Function] In the present invention, since the effective pattern is drawn after drawing another pattern, it is possible to eliminate the adverse effect that the initial mechanical and electrical instability of the drawing device has on the drawing of the effective pattern. Can be done.

[Real example] Embodiments of the present invention will be described below with reference to the drawings.

In addition, this fruit 1! In the description of example i, the description of parts that overlap with the description of the conventional technology will be omitted as appropriate.

FIG. 1 is a diagram for explaining a pattern drawing method in manufacturing a photomask according to an embodiment of the present invention.

In the figure, before the effective pattern 2 is drawn by the E8 drawing device, the effective pattern 2 is drawn on the mask substrate 1.
EBfi is installed in the lower left corner of the headrest other than I41g.
Pattern 1A is drawn based on the 6i data by spot scanning and stage movement.

Next, the mask substrate 1 is mounted on a soft stage (not shown).
Move in the X direction by approximately the maximum width of the effective 1m image area,
Pattern 2A is drawn on the lower right corner of the mask substrate 1 by spot scanning and stage movement based on the EB drawing data.6 Next, the stage is moved in the y direction by approximately the maximum width of the effective drawing area, and the mask Pattern 3A is placed on the upper right corner of the board 1 based on the EB drawing data.
l1ii! by spot scanning and stage movement. i
i do Next, the effective pattern 2 is deafened by the EB drawing data.
is sequentially drawn every stripe in the direction of the arrow by spot scanning and stage movement. Next, pattern I
Pattern 1 is drawn using the same method as drawing A, 2A, and 3A.
Pattern 1B is drawn next to pattern A, then pattern 1B is drawn next to pattern 2A, and then pattern 3B is drawn next to pattern 3A.

FIG. 2 shows patterns IA, 1B, and 2A of FIG. 1.

28. It is a diagram showing in detail the drawing method of 3A and 3B. In the figure, a pattern IA (2A) is created by scanning the spot in the y direction by the electron beam spot 3 in the stripe 5 and moving the stage in the X direction.

3A) and pattern 1B (28, 38). In the figure, SJA and SJB are the connecting parts of stripes 5, and PJ is pattern IA (2A).

3A) and pattern 1B (2E5.3B).

In this way, by writing the effective pattern 2 in the area where the patterns IA, 2A, and 3A are written, it is possible to eliminate the adverse effect that the initial mechanical and electrical instability of the EB writing device has on the writing of the effective pattern 2. Can be done.

Also, before drawing effective pattern 2, patterns 1A and 2A are
, 3A by moving the stage by approximately the maximum width of the effective drawing area, the stability of the legal movement of the stage can be increased.

Furthermore, stripe 5 of pattern 1A (2A, 3A)
Connecting part SJA, pattern IB (2B.

3B> stripe 5 joint SJB, pattern IA
(2A, 3A> and patterns 1A, 2A, such as the joint PJ of pattern 1B (2B, 3B).

By inspecting 3A and patterns IB, 2B, and 3B, the EB drawing accuracy before and after drawing of effective pattern 2 can be inspected.

In the above embodiment, patterns IA, 2A, 3A and patterns 18° 2B, 3'B are formed before and after drawing effective pattern 2.
The drawing performance of effective pattern 2 is based on patterns 1A and 2A.

Even just drawing 3A required the early mechanical work of EB drawing equipment.
The negative influence of electrical instability on drawing of the effective pattern 2 can be eliminated.

Further, in the above embodiment, 3Ei! of the mask substrate 1! Patterns IA, 2A, 3A, 1'5 and ' are placed on the corners of ii.
I have shown the case of drawing one seedling of IB, 28.3B,
The position to be drawn does not necessarily have to be at the corner of the long mask plate 1, and the pattern may be drawn at one or two places, and in these cases, the same effects as in the above embodiment can be achieved.

Furthermore, although the above embodiment shows a case in which the stage is moved in the x and y directions by approximately the maximum width of the effective drawing area, the stage may be moved an appropriate distance even if the width is not approximately the maximum width of the effective drawing area. , it is also possible to move only in either the X direction or the y direction, and in this case also the same effects as in the above embodiment can be achieved.

Further, in the above embodiment, patterns 1A and 1B.

Although the case where the connecting portions SJA and SJ[3 of the stripes 5 occur in 2A, 28.3A, and 3B is shown, the connecting portions of the stripes do not need to occur in these patterns, and in this case, the same procedure as in the above embodiment is applied. It has the effect of

Further, in the above embodiment, a case is shown in which an EB drawing device is used, but the present invention can also be applied to a case where a pattern is drawn using an FIB (focused ion beam), a laser beam, or an X-ray. Also, the same effect as in the above actual flow example is achieved.

Furthermore, although the above embodiments have been described in the case of drawing in photomask creation, the present invention can also be applied to the case of drawing a pattern on a photosensitive material coated on the surface of a semiconductor wafer, and in this case as well. The same effects as in the above embodiment are achieved.

[Effects of the Invention] As described above, according to the present invention, in order to improve the drawability of an effective pattern, another pattern other than the effective pattern is formed in an area other than the area where the effective pattern of the photosensitive material applied to the substrate surface is drawn. As a result, it is possible to obtain a pattern drawing method that can eliminate the negative effects of initial mechanical and electrical instability of the drawing device on effective pattern drawing, and to draw patterns on photosensitive materials with high precision. can do.

[Brief explanation of the drawing]

FIG. 1 is a diagram for explaining a pattern drawing method in manufacturing a photomask according to an embodiment of the present invention. FIG. 2 is a diagram showing in detail a method for drawing a pattern other than the effective pattern shown in FIG. 1. FIG. 3 is a diagram for explaining a pattern drawing method in the production of a conventional photomask. In the figure, 1 is a mask substrate, 2 is an effective pattern, and 3 is an electron beam spot, IA, IB, and 2A. 28.3A, 3B are patterns, 5 is stripes, 100
is a photomask. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (5)

[Claims] (1) In a pattern drawing method in which an effective pattern is drawn by irradiating a photosensitive material coated on the surface of a substrate with an energy beam, before drawing the effective pattern, an area other than the area where the effective pattern is drawn is covered with the effective pattern. A pattern drawing method characterized by drawing a pattern other than the pattern. (2) The pattern drawing method according to claim 1, wherein the energy beam is an electron beam. (3) The pattern drawing method according to claim 1, wherein the energy beam is a FIB. (4) The pattern drawing method according to claim 1, wherein the energy beam is a laser beam. (5) The pattern drawing method according to claim 1, wherein the energy beam is an X-ray.