JPS63231446A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS63231446A JPS63231446A JP62066029A JP6602987A JPS63231446A JP S63231446 A JPS63231446 A JP S63231446A JP 62066029 A JP62066029 A JP 62066029A JP 6602987 A JP6602987 A JP 6602987A JP S63231446 A JPS63231446 A JP S63231446A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- film
- pattern forming
- resist film
- forming method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000001678 irradiating effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 230000018109 developmental process Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- WQMWHMMJVJNCAL-UHFFFAOYSA-N 2,4-dimethylpenta-1,4-dien-3-one Chemical compound CC(=C)C(=O)C(C)=C WQMWHMMJVJNCAL-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- VHRYZQNGTZXDNX-UHFFFAOYSA-N methacryloyl chloride Chemical compound CC(=C)C(Cl)=O VHRYZQNGTZXDNX-UHFFFAOYSA-N 0.000 description 1
- NXMXPVQZFYYPGD-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;methyl prop-2-enoate Chemical compound COC(=O)C=C.COC(=O)C(C)=C NXMXPVQZFYYPGD-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
レジストｍの乾式現像方法を使用してなすパターン形成
方法である。[Detailed Description of the Invention] [Summary] This is a pattern forming method using a dry developing method of resist m.
レジスト膜を加熱した状態で遠紫外光照射をなし、この
一工程をもって露光と現像とを同時になすパターン形成
方法である。This is a pattern forming method in which the resist film is heated and irradiated with deep ultraviolet light, and exposure and development are performed simultaneously in this one step.
本発明はパターン形成方法の改良に関する。 The present invention relates to improvements in pattern forming methods.
特に、レジス）ＩＩの乾式現像方法を使用してなすパタ
ーン形成方法に関する。In particular, the present invention relates to a pattern forming method using the Regis II dry development method.
従来、レジストを使用してなすパターン形成方法におい
ては、レジスト膜を露光した後、現像液を使用して湿式
現像をなしている。Conventionally, in a pattern forming method using a resist, a resist film is exposed to light and then wet development is performed using a developer.
しかし、湿式現像をもっては、Ｗ潤の問題が避は難く、
湿式現像は自動化に適さず、安全上も望ましいとは言え
ないので、乾式現像法の開発が望まれており、ＰＭｉＰ
Ｋ（ポリメチルイソプロペニルケトン）レジストを遠紫
外光をもって露光した後、酸素プラズマエツチングをも
って現像する方法について研究がなされているが、未完
成であり、しかも、必ずしも簡易な工程とは言いがたい
。However, with wet development, the problem of W moisture is unavoidable.
Since wet development is not suitable for automation and is not desirable from a safety standpoint, the development of a dry development method is desired, and PMiP
Research has been conducted on a method in which K (polymethyl isopropenyl ketone) resist is exposed to deep ultraviolet light and then developed using oxygen plasma etching, but this method is incomplete and cannot necessarily be called a simple process.
本発明の目的は、上記の要望に応えることにあり、簡易
な工程をもってなす乾式現像法を使用してなすパターン
形成方法を提供することにある。An object of the present invention is to meet the above-mentioned needs, and to provide a method for forming a pattern using a dry development method that involves simple steps.
上記の目的を達成するために本発明が採った手段は、レ
ジスト膜（３）を加熱した状態で遠紫外光を照射して、
レジスト膜（３）の露光と現像とを、一工程をもって、
同時になすことにある。 。The means taken by the present invention to achieve the above object is to irradiate the resist film (3) with deep ultraviolet light while heating it.
Exposure and development of the resist film (3) in one step,
It is about doing things at the same time. .
レジスト現像の目的は、レジスト膜９選択された一部を
除去することである。湿式現像法においては、このレジ
ストの選択的排除を、溶剤を使用してなす溶解をもって
なしていたが、乾式現像法においては、（イ）選択され
た領域に微粒子を衝突させてこの領域のレジストを機械
的に除去する方法、（ロ）選択された領域のレジストを
昇華させる方法、（ハ）選択された領域のレジストに乾
式化学反応を発生させる方法等が考えられるが、本発明
は、選択された領域のレジストを昇華させる方法を利用
したものである。The purpose of resist development is to remove a selected portion of resist film 9. In the wet development method, this selective removal of the resist was achieved by dissolving it using a solvent, but in the dry development method, (a) fine particles are caused to collide with the selected area to eliminate the resist in this area. (b) sublimation of the resist in the selected area; (c) method of causing a dry chemical reaction to the resist in the selected area; however, the present invention This method utilizes a method of sublimating the resist in the exposed areas.
本発明は、ある種のレジストが露光されると昇華しやす
くなるという性質を利用したものであるが、これに加え
て、レジストを加熱して昇華しやすい状態にしておき、
その状態で紫外線照射をなし、紫外線照射がなされた領
域のレジストを昇華させて除去するものであり、一工程
をもって。The present invention utilizes the property that certain types of resist tend to sublimate when exposed to light.
In this state, the resist is irradiated with ultraviolet rays, and the resist in the irradiated area is sublimated and removed in one step.
露光と現像とを同時になすものである。This method performs exposure and development at the same time.
本発明に好適なレジストの１例としては、本来電子線露
光用として本出願の出願人によって開発され特許出願さ
れている（特願昭５２−１３３３３７号）架橋型ポリメ
チルメタクリレートレジストが挙げられる。この架橋型
ポリメチルメタクリレートレジストの組成はメチルメタ
クリレート（ＭＭＡ）９０．５モル％とメタクリル酸８
．５モル％とからなる共重合体Ｐ （ＭＭＡ−ＭＡ）及
びメチルメタクリレート（ＭＭＡ）９８．０モル％とメ
タクリル酸クロライド（ＣＪＩＭＡ）２．０モル％とか
らなる共重合体Ｐ （ＭＭＡ−ＣｌＭＡ）を等重量溶解
したものであり、本来的に、ポジ型の性質を有する。An example of a resist suitable for the present invention is a crosslinked polymethyl methacrylate resist originally developed for electron beam exposure by the applicant of the present application and for which a patent application has been filed (Japanese Patent Application No. 133337/1982). The composition of this cross-linked polymethyl methacrylate resist is 90.5 mol% of methyl methacrylate (MMA) and 8 mol% of methacrylic acid.
．． Copolymer P consisting of 5 mol% (MMA-MA) and Copolymer P consisting of 98.0 mol% methyl methacrylate (MMA) and 2.0 mol% methacrylic acid chloride (CJIMA) (MMA-ClMA) It is obtained by dissolving equal weights of , and inherently has positive type properties.
遠紫外光の好適な波長や好適な加熱温度は使用されるレ
ジストの分子機構にもとづいて決定されるが、 １００
〜１６０℃に加熱した状態テ２００〜３００ｎｍの遠紫
外光を照射すると好ましい結果が得られる。The suitable wavelength of deep ultraviolet light and suitable heating temperature are determined based on the molecular structure of the resist used, but 100
Favorable results can be obtained by irradiating deep ultraviolet light of 200 to 300 nm in a state heated to ~160°C.
以下、図面を参照しつ一１本発明の一実施例に係るパタ
ーン形成方法についてさらに説明する。Hereinafter, a pattern forming method according to an embodiment of the present invention will be further described with reference to the drawings.
第２図参照
シリコン基板ｌ上に、二酸化シリコン膜２を形成し、架
橋型ポリメチルメタクリレートレジストを１．Ｑ 膳ｌ
厚にスピンニートし、 １７０℃で２０分間程度プリベ
ークする。Referring to FIG. 2, a silicon dioxide film 2 is formed on a silicon substrate 1, and a cross-linked polymethyl methacrylate resist is applied 1. Q Meal
Spin-kneat until thick and pre-bake at 170°C for about 20 minutes.
第１図参照
ヒータ４を １５０℃程度に加熱しながら、フォトマス
ク５を介して、Ｘｅ−Ｈｇランプを使用して、紫外光を
照射する。While heating the heater 4 (see FIG. 1) to about 150° C., ultraviolet light is irradiated through the photomask 5 using a Xe-Hg lamp.
この工程によって、照射された領域のレジストは昇華し
て排除されて乾式現像が実現する。Through this step, the resist in the irradiated area is sublimated and removed, thereby realizing dry development.
第３図参照
残留したレジスト膜５をマスクとして、二酸化シリコン
膜３にフッ酸を接触させると、二酸化シリコン膜３をパ
ターニングすることができる。Referring to FIG. 3, by bringing hydrofluoric acid into contact with the silicon dioxide film 3 using the remaining resist film 5 as a mask, the silicon dioxide film 3 can be patterned.
以上説明せるとおり１本発明によれば、ある種のレジス
トを使用して形成したレジスト膜を、一工程をもって乾
式に露光会現像することができる。その結果、パターン
形成の工程短縮は勿論、現像液による膨潤の問題もなく
、解像性が向上し、現像液を全く必要としないので、安
全性も向上する。As explained above, according to the present invention, a resist film formed using a certain type of resist can be dry exposed and developed in one step. As a result, not only the process of pattern formation is shortened, but there is no problem of swelling caused by the developer, the resolution is improved, and since no developer is required, safety is also improved.
【図面の簡単な説明】
第１図は、本発明の一実施例に係るパターン形成方法の
主要工程の説明図である。
第２・３図は、本発明の一実施例に係るパターン形成方
法の主要工程完了後の基板断面図である・ｌ・・・基板
、
２・拳φ二酸化シリコン、
３・Ｓ帝しジスト膜、
４・・・ヒータ、
５ ＩＩ ６１１フオトマスク。
工程図
第２図
本発明
第１図
工程図
第 ３ ヒｊBRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory diagram of the main steps of a pattern forming method according to an embodiment of the present invention. Figures 2 and 3 are cross-sectional views of the substrate after completion of the main steps of the pattern forming method according to an embodiment of the present invention.l...Substrate, 2.Fist φ silicon dioxide, 3.S resist film , 4... Heater, 5 II 611 photomask. Process diagram Figure 2 Present invention Figure 1 Process diagram No. 3
Claims (1)
て前記レジスト膜（３）の露光・現像を同時になす ことを特徴とするパターン形成方法。 ［２］前記レジスト膜（３）は架橋型ポリメチルメタク
リレートを塗布して形成したレジスト膜（３）であり、
前記加熱の温度は１００〜１６０℃である特許請求の範
囲第１項記載のパターン形成方法。[Claims] [1] A resist film (3) is formed on a substrate (1), and the resist film (3) is exposed to light by irradiating far ultraviolet light while heating the resist film (3). - A pattern forming method characterized by simultaneous development. [2] The resist film (3) is a resist film (3) formed by applying cross-linked polymethyl methacrylate,
The pattern forming method according to claim 1, wherein the heating temperature is 100 to 160°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62066029A JPS63231446A (en) | 1987-03-20 | 1987-03-20 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62066029A JPS63231446A (en) | 1987-03-20 | 1987-03-20 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63231446A true JPS63231446A (en) | 1988-09-27 |
Family
ID=13304071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62066029A Pending JPS63231446A (en) | 1987-03-20 | 1987-03-20 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63231446A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996026467A1 (en) * | 1995-02-23 | 1996-08-29 | Council For The Central Laboratories Of The Research Councils | Deep pattern micro-lithography |
| US20220181171A1 (en) * | 2011-07-05 | 2022-06-09 | Kioxia Corporation | Substrate processing method and substrate processing apparatus |
-
1987
- 1987-03-20 JP JP62066029A patent/JPS63231446A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996026467A1 (en) * | 1995-02-23 | 1996-08-29 | Council For The Central Laboratories Of The Research Councils | Deep pattern micro-lithography |
| US20220181171A1 (en) * | 2011-07-05 | 2022-06-09 | Kioxia Corporation | Substrate processing method and substrate processing apparatus |
| US11921428B2 (en) * | 2011-07-05 | 2024-03-05 | Kioxia Corporation | Substrate processing method and substrate processing apparatus |
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