JPS63230877A - Production of thin tin film - Google Patents
Production of thin tin filmInfo
- Publication number
- JPS63230877A JPS63230877A JP6390587A JP6390587A JPS63230877A JP S63230877 A JPS63230877 A JP S63230877A JP 6390587 A JP6390587 A JP 6390587A JP 6390587 A JP6390587 A JP 6390587A JP S63230877 A JPS63230877 A JP S63230877A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- thin film
- substrate
- film
- tin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910021529 ammonia Inorganic materials 0.000 claims abstract 2
- 239000001257 hydrogen Substances 0.000 claims abstract 2
- 239000010936 titanium Substances 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 8
- 150000003609 titanium compounds Chemical class 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 15
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000005979 thermal decomposition reaction Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- -1 transition metal nitride Chemical class 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＴｉＮ薄膜とその製造方法に係り、特に、半
導体装置の製造に好適なＴｉＮ薄膜の製造方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a TiN thin film and a method for manufacturing the same, and particularly to a method for manufacturing a TiN thin film suitable for manufacturing semiconductor devices.
従来、半導体装置の金属窒化物膜としては特公昭５０−
２４５９６号公報に記載のように、ＴｉＮ。Conventionally, as a metal nitride film for semiconductor devices,
TiN as described in Japanese Patent No. 24596.
ＺｒＮ、ＨｆＮ、ＶＮ、ＮｂＮ、ＴａＮ等が知られてい
る。また、これらの金属窒化物膜の製造については、Ｔ
ｉＮについて、反応性スパッタ法、ＴｉｃＱａを原料と
するＣＶＤ法等が知られている。また、特に、特開昭５
２−７１１７４号公報に記載のように有機チタン化合物
を原料とするプラズマＣＶＤ法によるＴｉＮ膜の製造方
法があった。ZrN, HfN, VN, NbN, TaN, etc. are known. In addition, regarding the production of these metal nitride films, T.
Regarding iN, a reactive sputtering method, a CVD method using TicQa as a raw material, and the like are known. In addition, in particular,
As described in Japanese Patent No. 2-71174, there is a method for producing a TiN film using a plasma CVD method using an organic titanium compound as a raw material.
特に、ジャーナル オブ エレクトロケミカルソサイエ
テイ １２２ （１９７５年）第１５４５頁から第１５
４９頁において、ＴｉＮの低温ＭＯＣＶＤ法による製膜
方法が論じられている。In particular, Journal of Electrochemical Society 122 (1975) pp. 1545-15.
On page 49, a method for forming TiN films by low temperature MOCVD is discussed.
遷移金属窒化物膜をＭＯＣＶＤ法により形成する場合、
金属ソースとしてどのような化合物を選択するかが、形
成される窒化物膜の膜質に大きく影響する。特開昭６０
−１２５３７２号公報では、ベンゼン環、または、シク
ロペンタシュニル環に金属原子がはさまれたサンドイン
チ構造の化合物を用い、その熱分解により金属薄膜を形
成している。また、特開昭６１−６９９６９号公報では
金属ソースに含窒素化合物であるアジド化合物Ｔｉ［Ｎ
（ＣＨａ）ｚ１４等を用いて金属窒化物膜を形成してい
る。When forming a transition metal nitride film by MOCVD method,
The type of compound selected as the metal source greatly influences the quality of the nitride film formed. Tokukai 1986
In Japanese Patent No. 125372, a compound having a sandwich structure in which a metal atom is sandwiched between a benzene ring or a cyclopentashnyl ring is used, and a metal thin film is formed by thermal decomposition of the compound. Furthermore, in JP-A-61-69969, an azide compound Ti[N], which is a nitrogen-containing compound, is used as a metal source.
A metal nitride film is formed using (CHa)z14 or the like.
特公昭５０−２４５９６号公報にある技術では遷移金属
窒化物膜の有効性については述べられているが、具体的
な成膜方法についての記述がなく、この技術を実施する
上で問題があった。Although the technology in Japanese Patent Publication No. 50-24596 describes the effectiveness of transition metal nitride films, there was no description of a specific film-forming method, which caused problems in implementing this technology. .
また、特開昭５２−７１１７４号公報によれば、ＴｉＮ
膜を形成することは可能だが、ＴｉＮ生成までの化学反
応についての検討がなく問題があった。すなわち、Ｔｉ
ソースに［（ＣＨｉ）ｚＮＮコミＴｉ用いる場合には、
特開昭６１−６９９６９号公報と同じ技術であり。Furthermore, according to Japanese Patent Application Laid-Open No. 52-71174, TiN
Although it is possible to form a film, there was a problem in that there was no study of the chemical reactions leading to the formation of TiN. That is, Ti
When using [(CHi)zNNkomiTi for the source,
This is the same technology as in Japanese Patent Application Laid-Open No. 61-69969.
ＴｉＮ生成までの反応経路が複雑であり反応の制御が困
難であるという問題点があった。また、Ｔｉ（ＣａＨｓ
）ｚを用いる場合、この化合物が熱的に不安定であり問
題があった。There was a problem in that the reaction path leading to TiN production was complicated and it was difficult to control the reaction. In addition, Ti(CaHs
)z was used, there was a problem because this compound was thermally unstable.
Ｊ 、Ｅｌｅｃｔｒｏｃｈａｗ＋、Ｓｏｃ、１２２ ｐ
ｐ、１５４５（１９７５）では、窒素を含む有機チタン
化合物の熱分解によってＴｉＮ膜を得ているが、膜質が
悪く、ち密で密着性良く膜形成する上で問題があった。J, Electrochaw+, Soc, 122p
P, 1545 (1975), a TiN film was obtained by thermal decomposition of a nitrogen-containing organic titanium compound, but the film quality was poor and there were problems in forming a dense film with good adhesion.
特開昭６０−１２５３７２号公報の技術をＴｉに用いる
と、Ｔｉ（ＣｓＨｓ）ｚ、 Ｔｉ（ＣａＨｓ）ｚがＴｉ
ソースとなるが、これらの化合物は熱的に不安定である
。また、この技術は金属薄膜の製造方法であり、金属窒
化物およびその製造方法である本発明とは異なる技術で
ある。特開昭６１−６９９６９号公報の技術では含窒素
金属化合物の熱分解反応によりＴｉＮを生成するが、Ｔ
ｉＮの生成までに複雑な反応経路を経なければならず、
不純物を含みやすい１反応を制御しながら膜形成するの
が困難、という問題点があった。When the technique of JP-A-60-125372 is applied to Ti, Ti(CsHs)z and Ti(CaHs)z become Ti.
However, these compounds are thermally unstable. Further, this technology is a method for manufacturing a metal thin film, and is a different technology from the present invention, which is a metal nitride and a method for manufacturing the same. In the technique disclosed in JP-A No. 61-69969, TiN is produced by a thermal decomposition reaction of a nitrogen-containing metal compound.
It is necessary to go through a complicated reaction pathway before producing iN,
There is a problem in that it is difficult to form a film while controlling one reaction that tends to contain impurities.
本発明の目的は、ＴｉＮの生成までの化学反応を制御性
良く行ない、良質のＴｉＮ膜をＭＯＣＶＤ法で形成する
ことにある。An object of the present invention is to form a high-quality TiN film by the MOCVD method by performing chemical reactions leading to the formation of TiN with good controllability.
また、本発明のＴｉＮ薄膜裏造方法によれば。Further, according to the TiN thin film backing method of the present invention.
形成されたＴｉＮ薄膜は膜面方向によく成長し。The formed TiN thin film grows well in the direction of the film surface.
１μｍ以上の大きさになる。従来のＣＶＤ法、反応性ス
パッタ法で形成されたＴｉＮ薄膜では結晶粒の大きさは
、２００〜ＳｏＯ人と小さく１粒界の影響による抵抗の
増大と拡散バリヤ性の劣化が生じていた。すなわち１本
発明は、抵抗が小さく、拡散バリア性の高いＴｉＮ膜を
提供する目的も同時に持っている。The size becomes 1 μm or more. In TiN thin films formed by conventional CVD methods and reactive sputtering methods, the crystal grain size is small, ranging from 200 to SoO, resulting in an increase in resistance and a deterioration in diffusion barrier properties due to the influence of grain boundaries. That is, one object of the present invention is to provide a TiN film with low resistance and high diffusion barrier properties.
上記目的は、ＣＶＤ装置において金属ソースとしてＴｉ
（ＣｓＨａ）ｚＲ’Ｒ” （Ｒ’ 、 Ｒ”はＣとＨ
のみで構成される。）を用い、基板を加熱し金属ソース
を分解し、基板表面にＴｉを生成させ、反応管中に別瞬
導入したＮ Ｈａと反応させ、ＴｉＮ薄膜を基板上に形
成するとこにより達成される。The above purpose is to use Ti as a metal source in a CVD device.
(CsHa)zR'R"(R',R" are C and H
Consists of only ), the substrate is heated to decompose the metal source, Ti is generated on the surface of the substrate, and is reacted with N 2 Ha introduced separately into the reaction tube to form a TiN thin film on the substrate.
本発明では、Ｔｉが以下の式に従って基板上に形成され
る。In the present invention, Ti is formed on the substrate according to the following formula.
Ｔｉ（Ｃｓ）Ｉｓ）ｚＲ”Ｒ”＋−Ｈｚ→Ｔｉ＋２Ｃｓ
Ｈｓ＋ＨＪ”＋ＨＪ”（Ｑ、ｍ、ｎは整数）
有機Ｔｉ化合物は、 Ｔｉ（ＣｓＨｓ）ｚＣＱ ｚが安
定な化合物として良く知られているが、この物質は熱分
解後ＮソースであるＮＨａと反応し、ＮＨ４ＣＱを形成
するｍ Ｎ Ｈａ Ｃａ はガスとなりにくく、基板中
に不純物として残る。そのため、Ｔｉ（ＣａＨｓ）２Ｃ
ＱｘのＣＩ２を熱分解後ガスになりやすい有機物質で置
換した化合物であるＴｉ（ＣｓＨｓ）ｚＲＩＲ”がＴｉ
ソースとして好適な化合物である。Ｎは、ＮＨｓから供
給され以下の反応によりＴｉＮを基板上に生成する。Ti(Cs)Is)zR"R"+-Hz→Ti+2Cs
HS , NH4CQ is difficult to turn into a gas and remains as an impurity in the substrate. Therefore, Ti(CaHs)2C
Ti(CsHs)zRIR”, a compound in which CI2 of Qx is replaced with an organic substance that easily becomes gas after thermal decomposition, is Ti
This compound is suitable as a source. N is supplied from NHs, and TiN is produced on the substrate through the following reaction.
Ｔｉ＋ＮＨｓ→Ｔ ｉ Ｎ ＋ −Ｈｚそれに対し、従
来のＭＯＣＶＤ技術であるＴｉ ［Ｎ（ＣＩ（ａ）ｚｌ
ａ等のＴｉアジドの熱分解では原料中のＴ ｉ ／ Ｎ
比が１／４であり、反応により形成されるＴｉＮのＴ
ｉ ／ Ｎ比の制御が困難であり、また、Ｃ−Ｈの共有
結合が切断されずに残りＴ ｉ Ｎ中に不純物としてＣ
が残っていた。Ti+NHs→T i N + -Hz On the other hand, the conventional MOCVD technology Ti [N(CI(a)zl
In the thermal decomposition of Ti azide such as a, T i / N in the raw material
The ratio is 1/4, and the T of TiN formed by the reaction
It is difficult to control the i/N ratio, and C-H covalent bonds remain unbroken and remain as impurities in TiN.
was left.
本発明では、供給Ｔｉ量とＮ量を独立に制御し膜中のＴ
ｉ ／ Ｎ比を変えることが可能である。また、ＴＬ
（ＣｓＨｓ＞ｘＲ”Ｒ”の中で切断される結合は、配位
結合、あるいは、Ｔｉ−Ｃの弱い共有結合であり、熱分
解により形成されるＴｉＮ中へＴｉソースから不純物が
はいりにくい。In the present invention, the amount of Ti and the amount of N supplied are controlled independently, and the amount of T in the film is
It is possible to vary the i/N ratio. Also, T.L.
(CsHs>xR The bond broken in "R" is a coordinate bond or a weak Ti-C covalent bond, and impurities are difficult to enter from the Ti source into TiN formed by thermal decomposition.
また１本発明によれば、ＴｉＮは基板上にＴｉとＮの層
が順次積層して形成され、しかも、結晶の成長をさまた
げるＣＱやＣ等の不純物の混入がない、そのため、従来
困難であった基板に平行な方向へ結晶はよく成長し、平
均１μｍ以上の結晶粒を含むＴｉＮ薄膜が形成される。Furthermore, according to the present invention, TiN is formed by sequentially stacking Ti and N layers on a substrate, and there is no inclusion of impurities such as CQ or C that hinder crystal growth, which is difficult to do in the past. Crystals grow well in the direction parallel to the substrate, and a TiN thin film containing crystal grains with an average size of 1 μm or more is formed.
以下、本発明の一実施例を第１図により説明する。第１
図はＴｉソースにＴｉ（ＣｓＨａ）ｚ（ＣミＣＣ１３Ｈ
５）２を用いたＭＯＣＶＤ法により形成したＴ ｉ Ｎ
薄膜の断面図である。１はＴｉＮ薄膜であり膜厚は３０
０人である。基板温度５００℃で膜形成した場合、基板
に平行な方向への結晶粒の大きさは最大２μｍとなった
。また、このｒｉＮＷＩ！Ｉは（１１１）面に配向して
おり、Ｘ線回折では（１１１）と（２２２）の回折ピー
クのみを与えた。An embodiment of the present invention will be described below with reference to FIG. 1st
The figure shows Ti(CsHa)z(CmiCC13H) in Ti source.
5) T i N formed by MOCVD method using 2
FIG. 2 is a cross-sectional view of a thin film. 1 is a TiN thin film and the film thickness is 30
There are 0 people. When the film was formed at a substrate temperature of 500° C., the maximum crystal grain size in the direction parallel to the substrate was 2 μm. Also, this riNWI! I was oriented in the (111) plane, and X-ray diffraction gave only (111) and (222) diffraction peaks.
以下、本発明の一実施例を第２図により説明する。１１
は反応容器であり石英製である。１２は反応容器を加熱
するためのヒータであり、４は基板を支持するためのサ
セプタであり内部にヒータが装着されており、２とは独
立に基板の加熱を行なう、５，６は原料ガス導入口であ
り、７は導出口であり、９の真空ポンプおよび１０のマ
スフローコントローラで容器内の圧力を調節する。原料
ガスの導入口は、Ｔｉソース−キャリヤ不活性ガス導入
口５とＮ Ｈｓ −Ｈｚ−キャリヤ不活性ガス導入口６
にわかれている。ＴｉソースとしてＴｉ（ＣｓＨｓ）ｚ
（Ｃ＝ＣＣａＨｇ）ｚを用い、キャリア不活性ガスには
Ａｒを用いた。また、ＴｉソースとしてはＴｉ（Ｃｓ）
Ｉｓ）ｚ（ＣＨｓ）ｚ、 Ｔｉ（ＣａＨｓ）ｚ（ＣｓＨ
ｓ）ｚも使用可能であるお反応容器内圧は１〜１ＯＴｏ
ｒｒとし１反応容器部度８０℃、基板温度５００℃で膜
形成を行なった。膜形成速度はソースガス濃度に依存し
て変化し５０〜３００人／ ｍ ｉ ｎ程度の速度で成
膜した。第３図にＴｉＮ薄膜の結晶粒径の平均と膜の比
抵抗の関係を示す、比抵抗は基板面に平行な方向で測定
した。比抵抗は結晶粒径が大きくなるに従って小さくな
っており、平均粒径１μｍ以上でほぼ一定値となり粒径
を大きくした時の効果を示している。第４図にＴｉＮ薄
膜の結晶粒径と拡散バリヤ性能の関係を示した。拡散バ
リヤ性能は半導体装置の寿命で測っており、寿命が長い
ほど拡散バリヤ性能が高い。半導体装置は第５図に示す
構造となっている。１３のＡＱ配線がＴｉＮ薄ｌｌ１１
４中を拡散し、Ｓｉ基板１５上に達し、さらに拡散層１
６を突きやぶることにより半導体装置は破壊される。な
お、図中３は基板、８は有機金属化合物−キャリヤガス
混合装置、１７は、Ｓｉ酸化膜である。An embodiment of the present invention will be described below with reference to FIG. 11
is a reaction vessel made of quartz. 12 is a heater for heating the reaction vessel; 4 is a susceptor for supporting the substrate; a heater is installed inside; the substrate is heated independently from 2; 5 and 6 are raw material gases; 7 is an inlet port, 7 is an outlet port, and the pressure inside the container is adjusted by a vacuum pump 9 and a mass flow controller 10. The raw material gas inlets are Ti source-carrier inert gas inlet 5 and N Hs-Hz-carrier inert gas inlet 6.
It is divided into two. Ti(CsHs) as Ti source
(C=CCaHg)z was used, and Ar was used as a carrier inert gas. In addition, Ti (Cs) is used as a Ti source.
Is)z(CHs)z, Ti(CaHs)z(CsH
s) Z can also be used.The internal pressure of the reaction vessel is 1 to 1 OTo.
Film formation was carried out at a reaction vessel temperature of 80°C and a substrate temperature of 500°C. The film formation rate varied depending on the source gas concentration and was approximately 50 to 300 people/min. FIG. 3 shows the relationship between the average crystal grain size of the TiN thin film and the resistivity of the film. The resistivity was measured in a direction parallel to the substrate surface. The specific resistance decreases as the crystal grain size increases, and becomes a nearly constant value when the average grain size is 1 μm or more, indicating the effect of increasing the grain size. FIG. 4 shows the relationship between the crystal grain size and diffusion barrier performance of the TiN thin film. Diffusion barrier performance is measured by the lifespan of a semiconductor device, and the longer the lifespan, the higher the diffusion barrier performance. The semiconductor device has a structure shown in FIG. 13 AQ wiring is TiN thin 11
4, reaches the Si substrate 15, and further spreads through the diffusion layer 1.
6, the semiconductor device is destroyed. In the figure, 3 is a substrate, 8 is an organometallic compound-carrier gas mixing device, and 17 is a Si oxide film.
本発明によれば、ＭＯＣＶＤ法により不純物を含まない
ＴｉＮ薄膜を形成でき、しかも、形成されたＴｉＮ薄膜
は基板と平行に１μｍ程度まで成長させることができる
ので粒界の影響による抵抗の増大や拡散バリヤ性能の低
下のないＴｉＮ薄膜を形成することができる。According to the present invention, a TiN thin film that does not contain impurities can be formed by the MOCVD method, and the formed TiN thin film can be grown to a thickness of about 1 μm in parallel with the substrate, so there is no increase in resistance due to the influence of grain boundaries and diffusion. A TiN thin film can be formed without deterioration in barrier performance.
第１図は本発明の一実施例のＴｉＮ薄膜の断面図、第２
図は本発明のＴｉＮ用ＭＯＣＶＤ装置の構成図、第３図
はＴｉＮ膜中のＴｉＮ結晶粒径と比抵抗の関係を示す図
、第４図はＴｉＮ膜中のＴｉＮ結晶粒径と４５０℃での
半導体装置の寿命の関係を示す図、第５図は第４図の測
定に用いた半導体装置の構造図である。FIG. 1 is a cross-sectional view of a TiN thin film according to an embodiment of the present invention, and FIG.
The figure is a block diagram of the MOCVD apparatus for TiN of the present invention, Figure 3 is a diagram showing the relationship between the TiN crystal grain size in the TiN film and specific resistance, and Figure 4 is a diagram showing the relationship between the TiN crystal grain size in the TiN film and the resistivity at 450°C. FIG. 5 is a structural diagram of the semiconductor device used in the measurement of FIG. 4.
Claims (1)
せる基板面に平行に成長し、成長方向に垂直な結晶粒界
の数が１μｍあたり平均一個以下であることを特徴とす
るＴｉＮ薄膜の製造方法。 ２、５０〜４００℃に加熱し、０．１〜１０Ｔｏｒｒに
減圧した反応管へ有機チタン化合物、アンモニアおよび
水素を不活性ガスと共に供給し、前記反応管とは独立に
加熱した基板の表面にＴｉＮ膜を形成する成膜方法にお
いて、 前記有機チタン化合物が次式で表わされる化合物である
ことを特徴とするＴｉＮ薄膜の製造方法。 Ｔｉ（Ｃ＿５Ｈ＿５）＿２Ｒ＾１Ｒ＾２ （ただし、上式においてＲ＾１、Ｒ＾２はＣとＨのみか
ら構成される。またＲ＾１とＲ＾２は同一の構造であっ
てもよい。）[Claims] 1. The crystal grains in the TiN thin film grow parallel to the substrate surface on which the TiN thin film is formed, and the number of grain boundaries perpendicular to the growth direction is one or less per 1 μm on average. Characteristic method for producing a TiN thin film. 2. An organic titanium compound, ammonia, and hydrogen are supplied together with an inert gas to a reaction tube heated to 50 to 400°C and depressurized to 0.1 to 10 Torr, and TiN is applied to the surface of the heated substrate independently of the reaction tube. A method for producing a TiN thin film, wherein the organic titanium compound is a compound represented by the following formula. Ti(C_5H_5)_2R^1R^2 (However, in the above formula, R^1 and R^2 are composed of only C and H. Also, R^1 and R^2 may have the same structure. )
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6390587A JPS63230877A (en) | 1987-03-20 | 1987-03-20 | Production of thin tin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6390587A JPS63230877A (en) | 1987-03-20 | 1987-03-20 | Production of thin tin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63230877A true JPS63230877A (en) | 1988-09-27 |
Family
ID=13242806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6390587A Pending JPS63230877A (en) | 1987-03-20 | 1987-03-20 | Production of thin tin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63230877A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5139825A (en) * | 1989-11-30 | 1992-08-18 | President And Fellows Of Harvard College | Process for chemical vapor deposition of transition metal nitrides |
| US6475912B1 (en) | 1998-06-01 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield |
-
1987
- 1987-03-20 JP JP6390587A patent/JPS63230877A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5139825A (en) * | 1989-11-30 | 1992-08-18 | President And Fellows Of Harvard College | Process for chemical vapor deposition of transition metal nitrides |
| US6475912B1 (en) | 1998-06-01 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield |
| US6683381B2 (en) | 1998-06-01 | 2004-01-27 | Matsushita Electric Industrsial Co., Ltd. | Semiconductor device having a copper interconnect layer |
| US6906420B2 (en) | 1998-06-01 | 2005-06-14 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
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