JPS63229843A - Composite ceramic substrate - Google Patents
Composite ceramic substrateInfo
- Publication number
- JPS63229843A JPS63229843A JP6494087A JP6494087A JPS63229843A JP S63229843 A JPS63229843 A JP S63229843A JP 6494087 A JP6494087 A JP 6494087A JP 6494087 A JP6494087 A JP 6494087A JP S63229843 A JPS63229843 A JP S63229843A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- mullite
- ceramic substrate
- ceramics
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 239000002131 composite material Substances 0.000 title claims abstract description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052863 mullite Inorganic materials 0.000 claims abstract description 23
- 229910000679 solder Inorganic materials 0.000 abstract description 13
- 230000005496 eutectics Effects 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 6
- 229910017944 Ag—Cu Inorganic materials 0.000 abstract description 3
- 238000007772 electroless plating Methods 0.000 abstract description 3
- 229910015365 Au—Si Inorganic materials 0.000 abstract 3
- 238000005245 sintering Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000012752 auxiliary agent Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000005394 sealing glass Substances 0.000 description 2
- 238000001694 spray drying Methods 0.000 description 2
- 238000010344 co-firing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
イ゛０発明の目的
産業上の利用分野
本発明は半導体素子を備えムライトセラミックスおよび
窒化アルミニウムセラミックスの複合セラミックス基板
からなる半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device including a semiconductor element and comprising a composite ceramic substrate of mullite ceramics and aluminum nitride ceramics.
従来の技術
近年、半導体素子の高密度化、高速化に件ない半導体素
子からの発熱量は増大の傾向にあり半導体装置の放熱性
の改善が望まれている。BACKGROUND OF THE INVENTION In recent years, the amount of heat generated from semiconductor devices has tended to increase as semiconductor devices have become more dense and faster, and it has been desired to improve the heat dissipation properties of semiconductor devices.
また素子の大型化により素子と素子固定部分との熱膨張
差のため発生する熱応力に起因した素子の歪、はがれ、
破壊等が問題とされ、これ等に対する信頼性を確保する
ために熱膨張係数が素子に近いことも同時に望まれてい
る。In addition, due to the increase in the size of the device, distortion and peeling of the device due to thermal stress generated due to the difference in thermal expansion between the device and the part where the device is fixed,
Breakage is a problem, and in order to ensure reliability against such problems, it is also desired that the coefficient of thermal expansion be close to that of the element.
従来この放熱性の改善のため素子固定部に銅タングステ
ン等の金属を用いたアルミナセラミックス−金属複合構
造の半導体装置が用いられている。Conventionally, in order to improve heat dissipation, a semiconductor device having an alumina ceramic-metal composite structure in which a metal such as copper tungsten is used for the element fixing portion has been used.
しかし最近では更に電気絶縁性をも持つ要求が高まり、
このため電気絶縁性と高熱伝導性を併せ持つ材料として
ベリリアセラミックス、窒化アルミニウムセラミックス
等が注目されている。However, recently there has been an increasing demand for electrical insulation properties.
For this reason, beryllia ceramics, aluminum nitride ceramics, and the like are attracting attention as materials that have both electrical insulation and high thermal conductivity.
ベリリアセラミックスはすでにアルミナセラミックスと
複合化され実用化に至っているが、熱膨張係数が素子よ
りも大きく大型素子の固定か困難であること、また原料
の有する毒性および材料がすべて輸入にたよっているこ
と等、生産上大きな障害を持っている。Beryllia ceramics has already been combined with alumina ceramics and put into practical use, but its coefficient of thermal expansion is larger than the elements, making it difficult to fix large elements, and the toxicity of the raw materials means that all materials must be imported. This poses a major problem in production.
一方窒化アルミニウムセラミックスは、熱膨張係数が素
子に近く素子の固定についての問題はないものの、アル
ミナセラミックスとの複合化においては両者の熱１膨張
差により発生する熱応力のために直接の接合が不可能で
ある。これを緩和するために両者の間に応力緩和層を設
ける必要がありこのため工程が複雑になる上、信頼性に
も著しく欠けるものがあった〇
また窒化アルミニウムセラミックスだけで半導体装置を
製造することも可能であるが導体との同時焼成が・困難
なことや装置が高価になり過ぎる等の問題を持っている
。On the other hand, aluminum nitride ceramics has a coefficient of thermal expansion close to that of the element, so there is no problem with fixing the element, but when combined with alumina ceramics, direct bonding is not possible due to the thermal stress generated by the difference in thermal expansion between the two. It is possible. In order to alleviate this, it is necessary to provide a stress relaxation layer between the two, which complicates the process and significantly reduces reliability.Also, it is difficult to manufacture semiconductor devices using only aluminum nitride ceramics. Although it is possible, there are problems such as simultaneous firing with the conductor is difficult and the equipment is too expensive.
発明が解決しようとする問題点
本発明は以上の点を考慮してなされたもので半導体装置
に於て放熱性に優れかつ素子との熱膨張係数が近い複合
セラミックス基板を安価に提供することを目的とする。Problems to be Solved by the Invention The present invention has been made in consideration of the above points, and aims to provide at a low cost a composite ceramic substrate that has excellent heat dissipation properties and has a coefficient of thermal expansion close to that of an element in a semiconductor device. purpose.
口０発明の構成
問題点を解決するだめの手段
本発明は半導体素子を備えムライトセラミックス及び窒
化アルミニウムセラミックスを用いた半導体装置に於て
少くとも該半導体素子を固定する部分が窒化アルミニウ
ムセラミックスで構成されていることを特徴とする複合
セラミックス基板である。The present invention provides a semiconductor device including a semiconductor element and using mullite ceramics and aluminum nitride ceramics, in which at least a portion for fixing the semiconductor element is made of aluminum nitride ceramics. This is a composite ceramic substrate characterized by:
作用
ムライトセラミックスは熱膨張係数が窒化アルミニウム
セラミックスに近く両者の接合に関してはアルミナセラ
ミックスと窒化アルミニウムセラミックスの場合と比較
して熱応力の発生が無く、従来技術を用いて容易に製造
される。また窒化アルミニウムセラミックスのみで製造
するよりも製造コストが低い。従ってムライトセラミッ
クスと窒化アルミニウムセラミックスを複合化すること
により良放熱性、低熱膨張性等の特性を持った半導体装
置 １ 表
置を安価に得ることができ高出力で大型の素子用として
利用できる。Function Mullite ceramics have a coefficient of thermal expansion close to that of aluminum nitride ceramics, and when bonding them together, no thermal stress occurs compared to the case of alumina ceramics and aluminum nitride ceramics, and they can be easily manufactured using conventional techniques. Furthermore, the manufacturing cost is lower than manufacturing using only aluminum nitride ceramics. Therefore, by combining mullite ceramics and aluminum nitride ceramics, it is possible to obtain a semiconductor device with characteristics such as good heat dissipation and low thermal expansion at a low cost, and it can be used for high-output, large-sized devices.
なお第１表に窒化アルミニウムセラミ−７クス（ＡＩＮ
） 、 ムライトセラミックス（ムライト）、アルミ
ナの材料特性を示す。Table 1 shows aluminum nitride ceramic 7x (AIN
), mullite ceramics (mullite), and alumina material properties.
本発明の応用範囲としては半導体装置で回路基板型のも
のからパッケージ型の構造を持つものま゛で全での装置
に適用可能である。The scope of application of the present invention is applicable to all types of semiconductor devices, from those having a circuit board type to those having a package type structure.
本発明は従来アルミナセラミックスを用いた部分にムラ
イトセラミックスを用い、高熱伝導性の必要とされると
ころに使用されている金属、ベリリヤセラミックス、ま
たはアルミナセラミックスの代りに窒化アルミニウムセ
ラミックスを用いたものである。これらの材料には導体
パターン、リードフレーム、ＩＣ等を接合する必要があ
るが何れも通常用いられている同時焼成技術、厚膜ペー
スト技術、薄膜技術等を適用しメタライズおよびろう付
け、半田付、又はガラスソルダー等による接合を用いる
ことができる。The present invention uses mullite ceramics in parts where alumina ceramics were conventionally used, and uses aluminum nitride ceramics in place of metal, beryllia ceramics, or alumina ceramics, which are used in areas where high thermal conductivity is required. be. It is necessary to bond conductor patterns, lead frames, ICs, etc. to these materials, and in all cases, commonly used co-firing technology, thick film paste technology, thin film technology, etc. are applied to metallize, braze, solder, etc. Alternatively, bonding using glass solder or the like can be used.
実施例
実施例１
第１図は本発明をＰ、Ｇ、Ａ （ピングリッドアレイ）
に適用した実施例の断面図である。ムライト粉末に）４
ｇＯ又はＣａＯ等の助剤を添加したものを、有機溶剤中
に結合剤と共に分散、溶解しスラリーとしドクターブレ
ード法により厚さ０．８ ｍｍのシートを作成した。こ
れにＷペーストにより所定のパターンを印刷後、５枚を
加熱圧着して積層した。その後所定の形状に打ちぬいて
１５８０°Ｃで２時間窒素と水素の混合ガス中で同時焼
成を行ないムライトセラミックス基板ｌを得た。Examples Example 1 Figure 1 shows the present invention in P, G, A (pin grid array).
FIG. 3 is a cross-sectional view of an example applied to. (to mullite powder) 4
A slurry containing an auxiliary agent such as gO or CaO was dispersed and dissolved together with a binder in an organic solvent, and a sheet with a thickness of 0.8 mm was prepared using a doctor blade method. After printing a predetermined pattern on this with W paste, five sheets were heat-pressed and laminated. Thereafter, it was punched into a predetermined shape and co-fired at 1580° C. for 2 hours in a mixed gas of nitrogen and hydrogen to obtain a mullite ceramic substrate 1.
一方窒化アルミニウム粉末に助剤を添加したものをスラ
リー化し、ドクターブレー・ド法によりシートを作成し
た。これに−ペーストを用い所定のパターンを印刷後所
定の形状に打ちぬいて１８００℃で２時間窒素ガスまた
は窒素と水素の混合ガス中で焼成を行ない窒化アルミニ
ウムセラミックス基板２を得た。On the other hand, an auxiliary agent was added to aluminum nitride powder to form a slurry, and a sheet was made using the doctor blade method. After printing a predetermined pattern on this using paste, it was punched out into a predetermined shape and fired at 1800° C. for 2 hours in nitrogen gas or a mixed gas of nitrogen and hydrogen to obtain an aluminum nitride ceramic substrate 2.
こうして得られたムライト基板１、窒化アルミニウム基
板２にＮｉ無電解メッキを施した後、ビン３と共に窒化
アルミニウム基板２をムライト基板２にＡｇ−Ｃｕろう
４により８５０°Ｃで１０分間、窒素と水素の混合ガス
中で焼成し接合を行ない、Ａｕの無電解メッキを施した
。この後半導体素子５をＡｕ−８ｉ共晶ろう６でマウン
トした。次いでＡｕワイヤー７を用いて半導体素子５と
導体との接続を加熱超音波ポンディング法で行なった。After applying Ni electroless plating to the mullite substrate 1 and aluminum nitride substrate 2 obtained in this way, the aluminum nitride substrate 2 together with the bottle 3 was applied to the mullite substrate 2 using an Ag-Cu solder 4 at 850°C for 10 minutes with nitrogen and hydrogen. The joints were bonded by firing in a mixed gas of 1, and electroless Au plating was applied. Thereafter, the semiconductor element 5 was mounted with Au-8i eutectic solder 6. Next, using the Au wire 7, the semiconductor element 5 and the conductor were connected by a heating ultrasonic bonding method.
最後にムライトキャップ８をＡｕ−５ｎ共晶ろう９を用
いて、封止し複合Ｐ、Ｇ、Ａを形成した。また窒化アル
ミニウム基板２について先にシートを打ちぬき焼成を行
った後Ｗ 、 ＭｏまたはＭａｓＷペーストを用いパタ
ーン印刷し、１６５０°Ｃで窒素、水素混合ガス中で焼
付し、その後ＮｉＢ無電解メッキを行ないムライト基板
１との接合を行っても良好なＰ、Ｇ、Ａが得られた。Finally, the mullite cap 8 was sealed using Au-5n eutectic solder 9 to form composites P, G, and A. Further, for the aluminum nitride substrate 2, a sheet is first punched and fired, then a pattern is printed using W, Mo or MasW paste, baked at 1650°C in a nitrogen and hydrogen mixed gas, and then NiB electroless plating is performed. Good P, G, and A were obtained even when bonding with mullite substrate 1 was performed.
実施例 ２
第２図は本発明をチップキャリヤーを搭載した回路基板
に適用した実施例の断面図である。Embodiment 2 FIG. 2 is a sectional view of an embodiment in which the present invention is applied to a circuit board on which a chip carrier is mounted.
実施例１と同様にシート化されたムライトセラミックス
、窒化アルミニウムセラミックスを所定形状に打ちぬき
焼成して基板を得た。In the same manner as in Example 1, sheets of mullite ceramics and aluminum nitride ceramics were punched into predetermined shapes and fired to obtain substrates.
ムライト基板１にＡｇＰｄペーストを８５０℃、大気中
で焼付は導体パターン１０を形成した。次いで抵抗体ペ
ーストにより抵抗体１１を８５０℃大気中で形成し更に
オーバーコートガラス１２を５２０°Ｃ１大気中で焼付
し旧Ｃサブアセンブリ基板１３を得た。A conductor pattern 10 was formed by baking AgPd paste on a mullite substrate 1 at 850° C. in the atmosphere. Next, a resistor 11 was formed using a resistor paste in an atmosphere of 850°C, and an overcoat glass 12 was baked in an atmosphere of 520°C to obtain an old C subassembly board 13.
同じく半導体素子５搭載用の窒化アルミニウム基板２に
ＡｇＰｄペーストで８５０℃、大気中で導体パターンｌ
Ｏを形成した。これに半導体素子５をＡｕ−５ｉ共晶ろ
う６によりマウントし更にＡｕワイヤー７によりポンデ
ィングを行ってチップキャリヤー１４を得た。上記旧Ｃ
サブアセンブリ基板１３にチップキャリヤー１４を接着
後樹脂１５をコートして複合旧Ｃ基板を得た。Similarly, a conductor pattern l is formed with AgPd paste on an aluminum nitride substrate 2 for mounting a semiconductor element 5 at 850°C in the atmosphere.
O was formed. A semiconductor element 5 was mounted on this using an Au-5i eutectic solder 6, and bonding was performed using an Au wire 7 to obtain a chip carrier 14. Old C above
After adhering the chip carrier 14 to the subassembly board 13, a resin 15 was coated to obtain a composite old C board.
実施例 ３
第３図は本発明をサーディツプ（ＣＥＲ−ＤＩＲ）に適
用した実施例の断面図である。Embodiment 3 FIG. 3 is a sectional view of an embodiment in which the present invention is applied to a cerdip (CER-DIR).
ムライト粉末に助剤を添加したものを水、結合剤と共に
スラリー化しスプレードライ法により造粒した。 これ
をプレス成形した後１５８０°Ｃで２時間焼成して更に
封止ガラス１６を印刷焼付けでムライトセラミックスの
キャップ８を得た。Mullite powder with auxiliary agents added thereto was made into a slurry with water and a binder, and granulated by a spray drying method. After press-molding this, it was fired at 1580°C for 2 hours, and a sealing glass 16 was printed and baked to obtain a cap 8 made of mullite ceramics.
また窒化アルミニウム粉末に助剤を添加したものを有機
溶剤及び結合剤と共にスラリー化しスプレードライ法に
より造粒を行ない、これをプレス成形した後１８００℃
で２吟間窒素ガス中で焼成した。更に封止ガラス１６を
印刷焼付けその上にリードフレーム１７を加熱圧着し固
定して窒化アルミニウムベース１８ヲ得た。In addition, aluminum nitride powder with auxiliary agents is made into a slurry with an organic solvent and a binder, granulated by a spray drying method, and then press-molded at 1800°C.
It was fired in nitrogen gas for 2 minutes. Furthermore, a sealing glass 16 was printed and baked, and a lead frame 17 was heat-pressed and fixed thereon to obtain an aluminum nitride base 18.
このベース１日のキャビティ部にＡｕペーストを滴下し
８５０°Ｃ１空気中で焼成後ＩＣ素子５をＡｕ−５ｉ共
晶ろう６でマウントした。次いでＡｕワイヤー７でＩＣ
素子５とリードフレーム１７をＡｕワイヤーポンディン
グ７した。最後にベース１８とキャンプ８を加圧封止し
て気密構造とし複合セラミックスのサーディツプを得た
。Au paste was dropped into the cavity of this base and baked in air at 850 DEG C., after which the IC element 5 was mounted with Au-5i eutectic solder 6. Next, connect the IC with Au wire 7.
The element 5 and the lead frame 17 were bonded with Au wire 7. Finally, the base 18 and the camp 8 were sealed under pressure to form an airtight structure and a composite ceramic cerdip was obtained.
ハ０発明の詳細
な説明したように本発明によれば半導体装置において放
熱性に優れ大型素子の固定できる複合セラミックス基板
を安価に提供することができる。As described in detail, according to the present invention, it is possible to provide, at low cost, a composite ceramic substrate that has excellent heat dissipation properties in semiconductor devices and is capable of fixing large-sized elements.
第１図は本発明をＰ、Ｇ、Ａ （ピングリッドアレイ）
に適用した実施例の断面図である。
第２図は本発明をチップキャリヤーを搭載した回路基板
に適用した実施例の断面図である。
第３図は本発明をサーディツプ（ＣＥＲ−ＤＩＰ）に適
用した実施例の断面図である。
１、ムライトセラミックス基板 ２．窒化アルミニウム
セラミックス基板 ３．ヒン
４、Ａｇ−Ｃｕろう５．半導体素子６．Ａｕ−５ｉ共晶
ろう７、 Ａｕワイヤー ８．キャップ９．Ａｕ−５ｎ
共晶ろう１０、導体パターン １１．抵抗体
１２、オーバーコートガラス
１３、８ＩＣサブアツセンブリ基板
１４、チップキャリヤ １５．樹脂 １６．封市ガラス
１７、リードフレーム１８．窒化アルミニウムベース特
許出願人 鳴海製陶株式会社
第１図
第２図
第３図Figure 1 shows the present invention as P, G, A (pin grid array).
FIG. 3 is a cross-sectional view of an example applied to. FIG. 2 is a sectional view of an embodiment in which the present invention is applied to a circuit board on which a chip carrier is mounted. FIG. 3 is a sectional view of an embodiment in which the present invention is applied to a CER-DIP. 1. Mullite ceramics substrate 2. Aluminum nitride ceramic substrate 3. Hin4, Ag-Cu wax5. Semiconductor element 6. Au-5i eutectic solder 7, Au wire 8. Cap9. Au-5n
Eutectic solder 10, conductor pattern 11. Resistor 12, overcoat glass 13, 8IC subassembly board 14, chip carrier 15. Resin 16. Sealed glass 17, lead frame 18. Aluminum nitride base patent applicant Narumi Seito Co., Ltd. Figure 1 Figure 2 Figure 3
Claims (1)
ニウムセラミックスを用いた半導体装置に於て少くとも
該半導体素子を固定する部分が窒化アルミニウムセラミ
ックスで構成されていることを特徴とする複合セラミッ
クス基板A composite ceramic substrate comprising a semiconductor device including a semiconductor element and using mullite ceramics and aluminum nitride ceramics, characterized in that at least a portion for fixing the semiconductor element is made of aluminum nitride ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62064940A JP2652014B2 (en) | 1987-03-19 | 1987-03-19 | Composite ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62064940A JP2652014B2 (en) | 1987-03-19 | 1987-03-19 | Composite ceramic substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63229843A true JPS63229843A (en) | 1988-09-26 |
| JP2652014B2 JP2652014B2 (en) | 1997-09-10 |
Family
ID=13272530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62064940A Expired - Lifetime JP2652014B2 (en) | 1987-03-19 | 1987-03-19 | Composite ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2652014B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138426A (en) * | 1988-09-22 | 1992-08-11 | Ngk Insulators, Ltd. | Ceramic joined body |
| US5885853A (en) * | 1990-06-22 | 1999-03-23 | Digital Equipment Corporation | Hollow chip package and method of manufacture |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS617647A (en) * | 1984-06-21 | 1986-01-14 | Toshiba Corp | Circuit substrate |
| JPS61230204A (en) * | 1985-04-05 | 1986-10-14 | 株式会社日立製作所 | Ceramic substrate and manufacture thereof |
-
1987
- 1987-03-19 JP JP62064940A patent/JP2652014B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS617647A (en) * | 1984-06-21 | 1986-01-14 | Toshiba Corp | Circuit substrate |
| JPS61230204A (en) * | 1985-04-05 | 1986-10-14 | 株式会社日立製作所 | Ceramic substrate and manufacture thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138426A (en) * | 1988-09-22 | 1992-08-11 | Ngk Insulators, Ltd. | Ceramic joined body |
| US5885853A (en) * | 1990-06-22 | 1999-03-23 | Digital Equipment Corporation | Hollow chip package and method of manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2652014B2 (en) | 1997-09-10 |
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