JPS63227008A - Vapor growth method - Google Patents
Vapor growth methodInfo
- Publication number
- JPS63227008A JPS63227008A JP6154487A JP6154487A JPS63227008A JP S63227008 A JPS63227008 A JP S63227008A JP 6154487 A JP6154487 A JP 6154487A JP 6154487 A JP6154487 A JP 6154487A JP S63227008 A JPS63227008 A JP S63227008A
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- mixer
- reaction gases
- chamber
- growth method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 19
- 239000007789 gas Substances 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 8
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 4
- 229910000058 selane Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は化合物半導体等の半導体薄膜積層成長において
、特に組成や不純物濃度の分布が大面積にわたって均一
である成長層を再現性よく得ることのできる気相成長方
法を提供するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to the growth of thin films of semiconductors such as compound semiconductors, in which growth layers having a uniform composition and impurity concentration distribution over a large area can be obtained with good reproducibility. A phase growth method is provided.
従来の技術
最近、化合物半導体を用いたベテロ接合デバイスの研究
開発が盛んに行なわれている。薄膜のエピタキシャル成
長法としては、従来の液相成長（Ｌ Ｐ Ｅ ； Ｌｉ
ｑｕｉｄ Ｐｈａｓｅ Ｋｐｉｔａｘｙ ）法にかわり
、超薄膜多層構造の形成が容易な分子線エピタキシー
（Ｍ Ｂ Ｅ ； Ｍｏｌｅｃｕｌａｇ Ｂｅａｍ Ｋ
ｐｉｔａｘｙ ）法や気相成長（Ｖ Ｐ ＩＣ； Ｖａ
ｐｏｒ Ｐｈａｓｅ Ｒｐｉｔａｘｙ）法が主流を占め
ている。この気相成長法のうち有機金属化合物を用いた
有機金属気相成長（ＭＯＶＰＥ； Ｍｅｔａｌ Ｏｒｇ
ａｎｉｃ Ｖａｐｏｒ Ｐｈａｓｅ Ｅｐｉｔａｘｙ
）法が、特に量産性の高い方法として注目されている。BACKGROUND OF THE INVENTION Recently, research and development of beterojunction devices using compound semiconductors has been actively conducted. Conventional liquid phase epitaxy (LPE; Li
Molecular beam epitaxy, which can easily form ultra-thin multilayer structures, replaces the Quid Phase Kpitaxy method.
(MBE; Moleculag Beam K
pitaxy) method and vapor phase growth (V PIC; Va
por Phase Rpitaxy) method is the mainstream. Among these vapor phase growth methods, metal organic vapor phase epitaxy (MOVPE; Metal Org) using an organometallic compound
anic Vapor Phase Epitaxy
) method is attracting attention as a method with particularly high mass production efficiency.
一般に、この種の気相成長法に用いられる装置は、結晶
成長室内の気体の圧力によって、常圧（大気圧）ｖｐｘ
装置および減圧ＶＰＥ装置に大別される。常圧ｖｐｘ装
置の方が、装置が簡単であり、反応ガスの切り換え等に
よる結晶成長室内の圧力変動も少ない。しかし、エピタ
キシャル成長する材料によっては、結晶成長室内の圧力
が、大気圧よりも低い方が好ましい場合がある。特にＩ
ｎＰ系の場合や高純度の結晶膜の場合顕著である。Generally, the equipment used for this type of vapor phase growth method uses the pressure of the gas in the crystal growth chamber to create a normal pressure (atmospheric pressure) vpx.
It is broadly divided into equipment and reduced pressure VPE equipment. The atmospheric pressure VPX apparatus is simpler and has less pressure fluctuations in the crystal growth chamber due to switching of reaction gas, etc. However, depending on the material to be epitaxially grown, it may be preferable for the pressure inside the crystal growth chamber to be lower than atmospheric pressure. Especially I
This is noticeable in the case of nP type or high purity crystalline films.
従来、減圧気相成長法には第６図に示すような装置が用
いられていた（犬場康夫ら、１９８５年７月１９日応用
物理学結晶工学分科会第２回結晶工学シンポジウム予稿
集Ｐ３７）。１はキャリアガス用水素（Ｈ２）である。Conventionally, an apparatus as shown in Figure 6 has been used for the reduced pressure vapor phase growth method (Yasuo Inuba et al., Proceedings of the 2nd Crystal Engineering Symposium, Applied Physics Crystal Engineering Subcommittee, July 19, 1985, P37 ). 1 is hydrogen (H2) for carrier gas.
本装置は（ム１ｘＧ４＋−Ｘ）ｙＩｎ１ｙＰ系の結晶成
長に用いられる。■族原料ガス及びＰ型ドーパントガス
には、トリメチルガリウムＴ Ｍ Ｇ （（ＣＨ３）３
Ｇａ ）、トリメチルアルミニウム７Ｍ人（（ＣＨ５）
ＭＡｌ）、トリメチルインジウムＴＭＩ（（ＣＨｓ＞５
Ｉｎ ）、及びジメチルジ／りＤＭＺ（（ＯＬ）２Ｚｎ
）が用いられ、それらは同一配管内に導入され、ニード
ル弁３２を介して導入管４１に導入される。又Ｖ族原料
ガス及びｎ型ドーパントガスには、ホスフィンＰＨ３３
３，７７１７７人５Ｈ３３４及びセレン化水素Ｈ２Ｓ６
３５が用いられ、それらは同一配管に導入され、ニード
ル弁３１を介して、導入管４ｏ及び４１へと導入され、
■族原料ガスと混合し、石英炉芯管４４内へ導入される
。This apparatus is used for crystal growth of the (M1xG4+-X)yIn1yP system. Trimethylgallium TMG ((CH3)3
Ga), trimethylaluminum 7M ((CH5)
MAl), trimethylindium TMI ((CHs>5
), and dimethyldi/diDMZ ((OL)2Zn
) are used, and they are introduced into the same pipe and introduced into the introduction pipe 41 via the needle valve 32. In addition, phosphine PH33 is used as the V group raw material gas and n-type dopant gas.
3,77177 people 5H334 and hydrogen selenide H2S6
35 are used, they are introduced into the same pipe, and are introduced into the introduction pipes 4o and 41 through the needle valve 31,
It is mixed with the Group (1) raw material gas and introduced into the quartz furnace core tube 44 .
石英炉芯管４４内の気体圧力は、ニードル弁３１゜３２
及び圧力調整弁５１を調整することにより、所望の圧力
に設定される。この時、真空装置としてロータリポンプ
６２が用いられる。第４図に示される装置では、■族原
料ガス及びＰ型ドーパントガスは同一配管内で混合され
、■族原料ガス及びｎ型ドーパントガスは同一配管内で
混合され、各々ニードル弁３１．３２を介して導入管４
１に導びかれる構造になっていた。The gas pressure inside the quartz furnace core tube 44 is controlled by the needle valves 31 and 32.
By adjusting the pressure regulating valve 51, the desired pressure is set. At this time, a rotary pump 62 is used as a vacuum device. In the apparatus shown in FIG. 4, the Group 1 raw material gas and the P-type dopant gas are mixed in the same pipe, and the Group 2 raw material gas and the N-type dopant gas are mixed in the same pipe, and the needle valves 31 and 32 are respectively mixed. Introductory tube 4 through
The structure was guided by 1.
発明が解決しようとする問題点
しかしながら上記のような装置を用いた方法だと、■族
原料ガス３６．３７．３８及びＤ Ｍ Ｚ３９はニード
ル弁３２を介して導入管４１に導入される時混合される
が、Ｖ族原料やＨ２Ｓｅとの混合には導入管４１内のみ
であり、結晶成長室に導入さｎた時、充分混合されない
。したがって大面積にわたって均一な薄膜の形成は非常
に難しい問題点があった。Problems to be Solved by the Invention However, in the method using the above-mentioned device, the group (I) raw material gases 36, 37, 38 and D M Z 39 are mixed when introduced into the introduction pipe 41 via the needle valve 32. However, the group V raw material and H2Se are mixed only in the introduction tube 41, and when they are introduced into the crystal growth chamber, they are not mixed sufficiently. Therefore, it is very difficult to form a uniform thin film over a large area.
問題点を解決するための手段
本発明は上記問題点を解決するため、第１の同一元素反
応ガスの全てと第２の同一元素反応ガスの少なくとも１
種を、たとえば入口側に設けられた開閉度調整可能なオ
リスイスを介して入口側よりも細い管からなる混合器を
用いて充分に混合し結晶成長室内へ導入するようにした
ものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides that all of the first same-element reaction gases and at least one of the second same-element reaction gases
For example, the seeds are thoroughly mixed using a mixer made of a narrower tube than the inlet side, and then introduced into the crystal growth chamber via an oriSwiss that is provided on the inlet side and whose opening/closing degree can be adjusted.
作用 この技術的手段による作用は次のようになる。action The effect of this technical means is as follows.
同一族元素反応ガス及び異族元素反応ガスをガス混合が
行なわれたのち結晶成長室内に導入されるため組成やド
ーピング量のばらつきはきわめて少なくなった。Since the same family element reaction gas and the different group element reaction gas are introduced into the crystal growth chamber after gas mixing, variations in composition and doping amount are extremely small.
実施例 本発明による具体的な実施例を第１図に示す。Example A specific embodiment according to the present invention is shown in FIG.
１００は複数の反応ガスの入口例えば断面積の直径ば％
インチ、１０１は取手１０４を摺動することにより開閉
度調整可能なオリフィス、１０２はオリフィス１０１を
通過した後、広い空間に出すことによυ混合を促進する
混合部人、１０３は混合部人を通過した後、狭い空間に
導入することによシ、混合を促進するだけでなく素速く
通過させるため細い管からなる混合部Ｂ例えば断面積の
直径はμインチ、１０６はベローである。100 is the inlet of multiple reaction gases, for example, the diameter of the cross-sectional area is %
101 is an orifice whose opening/closing degree can be adjusted by sliding the handle 104, 102 is a mixing member that promotes υ mixing by letting it out into a wide space after passing through the orifice 101, and 103 is a mixing member. After passing through, the mixture is introduced into a narrow space to not only promote mixing but also to allow the mixture to pass through quickly. For example, the mixing section B consists of a thin tube, for example, the cross-sectional area has a diameter of .mu.inch, and 106 is a bellows.
本発明の混合器ビ用いて、第２図に示されるようなＭＯ
ＶＰＫ装置を作製した。この装置を用いて人７ｉｅａＡ
ｓ系層のエピタキシャル成長を行ない良好な結果を得た
。本発明の効果をより明らかにするために、人ｄＧａＡ
ｓ ／ ＧａＡｓ ／人／ＧａＡｓ ／ ＧａＡｓの単
一井戸層を作製し、フォトルミネッセンスにより、層厚
及び組成のばらつきを調べた。■族反応ガスとしてトリ
メチルガリウムＴＭＧ（（０Ｈ３）３Ｇａ ） ３６、
トリメチルアルミニウム７Ｍ人（（ＣＨ５）５ム１）３
７、■族反応ガスとしてアルシンム５Ｈ５３４ｆ用いた
。Ｐ型ドーパントにはジメチルジンクＤ Ｍ Ｚ （（
ＣＨ，）２Ｚｎ ） ３９、ｎ型ドーパントにセレン化
水素Ｈ２Ｓｅ ３５ ｉ用いた。Using the mixer bi of the present invention, MO as shown in FIG.
A VPK device was created. Using this device, people 7ieaA
Good results were obtained by epitaxially growing an s-based layer. In order to clarify the effects of the present invention, human dGaA
A single well layer of s/GaAs/Human/GaAs/GaAs was fabricated, and variations in layer thickness and composition were investigated by photoluminescence. Trimethylgallium TMG ((0H3)3Ga) 36 as a group (III) reaction gas,
Trimethylaluminum 7M people ((CH5)5M1)3
7. Alsym 5H534f was used as the group (Ⅰ) reaction gas. Dimethyl zinc DM Z ((
CH, )2Zn ) 39, hydrogen selenide H2Se 35 i was used as the n-type dopant.
キャリアガスはＰｄ拡散膜を通った高純度水素ガスで流
量は６．ｓｌ／ｍｉｎである。基板２００はｅａＡｓ（
１ｏ ｏ ）で、基板温度は７００°Ｃである。The carrier gas is high-purity hydrogen gas that has passed through a Pd diffusion membrane, and the flow rate is 6. sl/min. The substrate 200 is made of eaAs (
1o o ), and the substrate temperature is 700°C.
石英炉芯管４４内の気体の圧力は混合器本体１０６のオ
リフィス１０１及び圧力調整弁５１を調整することによ
り０゜１気圧に保たれる。成長速度は、約１μｍ／ｈｒ
になるように、ＴＭＧ３６もしくはＴＭＧ３６＋ＴＭＡ
３７の濃度を調整する。さらにＡｊｘＧ４＋−ｘｋｓの
Ａ５の混晶比は０．３になるようにＴＭＧ３６とＴＭλ
３７の濃度比も合わせて調整する。The pressure of the gas in the quartz furnace core tube 44 is maintained at 0.degree. and 1 atmosphere by adjusting the orifice 101 of the mixer body 106 and the pressure regulating valve 51. Growth rate is approximately 1 μm/hr
TMG36 or TMG36+TMA so that
Adjust the density of 37. Furthermore, TMG36 and TMλ are adjusted so that the mixed crystal ratio of A5 in AjxG4+-xks is 0.3.
The concentration ratio of 37 is also adjusted accordingly.
ます人ｊｏ３Ｇａｏ７Ａｓ層２０１を基板上に約０．２
μＩｎ成長した後、ＧａＡｓ層２０２を約４０入成長し
、さらにＡ７Ｊ、５Ｇａ（１，７ムＳ層２０３を０．２
μｍ成長してＡ１０５Ｇ２Ｌｏ７ムｓ ／ ＧａＡｓ
／ Ａｅｏ、５Ｇ”ＩＬ７ムＳ の５ＱＷ（Ｓｉｎｇｌ
ｅ Ｑｕａｔｕｍ Ｗａｌｌ ）構造を作製する（第３
図）。第４図は室温における成長結晶のフォトルミネッ
センスを示す。ピーク１は表面のＡ６ｏ、５Ｇａｏ、６
ムＳのフォトルミネッセンスであり、ピーク２とピーク
３はＧ＆ムＳ井戸層からのフォトルミネッセンスである
。ヘテロ界面が急峻であるため、ヘビーホールとライト
ホールとの再結合による発光が分離されて観察されてい
るのがわかる。Place the As layer 201 on the substrate with a thickness of about 0.2
After the μIn growth, a GaAs layer 202 of about 40 μm is grown, and an A7J, 5Ga (1.7 μm) S layer 203 of 0.2 μm is grown.
μm grown A105G2Lo7mus/GaAs
/ Aeo, 5G"IL7MUS's 5QW (Singl
e Quantum Wall) structure (3rd step)
figure). FIG. 4 shows the photoluminescence of the grown crystal at room temperature. Peak 1 is surface A6o, 5Gao, 6
Peak 2 and peak 3 are photoluminescence from the G&muS well layer. It can be seen that because the hetero interface is steep, the light emission due to recombination between the heavy hole and light hole is observed separately.
このスペクトルは、成長結晶のほぼ中央である７５ζ直
径が３インチの基板において、ピーク１は±１．５ｎｍ
、ピーク２及びピーク３は±３ｎ！Ｉｆはどばらついて
いることがわかった０これらを組成及び井戸層の層厚に
換算すると、±０．０１及び±４人となり実用上全く問
題にならないばらつきである。This spectrum shows that peak 1 is ±1.5 nm at a substrate with a 75ζ diameter of 3 inches, which is approximately the center of the grown crystal.
, peak 2 and peak 3 are ±3n! It was found that If was found to vary widely. When these values are converted into the composition and the thickness of the well layer, they become ±0.01 and ±4 people, which is a variation that does not pose any problem in practice.
すなわち混合器本体１０６及び混合部Ｂ１０３を用いる
ことにより、組成及び層厚の均一性は飛躍的に向上した
。尚、本発明による混合器を用いずに同様なＳＱＷを作
成した。表面のモフオロジーには大差は見受けられない
が、ヘビーホールとライトホールとの再結合による発光
ははっきりとは分離されなかった。この原因としては、
ヘテロ界面が急峻でないかあるいは層厚あるいは組成が
ばらついているためだと思われる。混合器を用いないだ
けであるので、ヘテロ界面やＧＩＬＡＳ井戸層よりもＡ
ＪＧａＡＳ層の組成のばらつきが犬きく幼いていると思
われる。又ドーピングを行なったところ、Ｐ型、ｎ型と
もにほとんどばらつきがない。That is, by using the mixer main body 106 and the mixing part B103, the uniformity of the composition and layer thickness was dramatically improved. Note that a similar SQW was created without using the mixer according to the present invention. Although there was no significant difference in surface morphology, the light emission due to recombination between heavy holes and light holes could not be clearly separated. The cause of this is
This is probably because the hetero interface is not steep or the layer thickness or composition varies. Since no mixer is used, the A
It seems that the variation in the composition of the JGaAS layer is extremely small. Further, when doping was performed, there was almost no variation in both the P type and the n type.
以上述べた実施例においては、ム７！ＧａＡｓ ／Ｇａ
Ａｓについて説明したが、ＩｎＧａＡｓＰ／ＩｎＰ系や
ＡｌＧａＩｎＰ ／ＧａＡｓ系は勿論のこと、他のＩ−
Ｖ族および■−■族化合物半導体や混晶半導体の結晶成
長に用いることは言うまでもない。尚混合器の構成とし
て、ペローシールニードル弁と断面積の直径が偽インチ
のステンレス管を組み合わせてもよい。In the embodiment described above, Mu7! GaAs/Ga
Although As has been explained, not only the InGaAsP/InP system and the AlGaInP/GaAs system but also other I-
Needless to say, it can be used for crystal growth of V group and ■-■ group compound semiconductors and mixed crystal semiconductors. The mixer may be constructed by combining a Perot Seal needle valve and a stainless steel tube with a cross-sectional area diameter of approximately 1 inch.
発明の効果
本発明の気相成長方法は、同一族元素反応ガス及び異族
元素反応ガスを開閉度調整可能なオリフィスを介して混
合邦人および混合部已において充分混合されるので、成
長薄膜の組成及びドーピング及び層厚はほとんどばらつ
きがなくなった。すなわち、大面積にわたってヘテロ界
面やＰｎ接合の界面が極めて急峻にしかも再現性よく得
られるようになった。その結果、この結晶より作られる
デバイスのコストも大幅に削減することが可能とな９、
非常に実用的効果は大である。Effects of the Invention In the vapor phase growth method of the present invention, the same family element reaction gas and the different group element reaction gas are thoroughly mixed in the mixing section through the orifice whose opening/closing degree can be adjusted. The doping and layer thickness are almost uniform. That is, it has become possible to obtain extremely steep hetero interfaces and Pn junction interfaces over a large area with good reproducibility. As a result, it is possible to significantly reduce the cost of devices made from this crystal9.
It has great practical effects.
第１図は本発明の一実施例方法に用いる混合器の概略断
面図、第２図は本実施例方法を用いたＭＯＶＰＥ装置の
構成図、第３図は本実施例方法を用いて作製したＳＱＷ
層の断面図、第４図は同ＳＱＷ層の２オドルミネツセン
スを示す特性図、第５図は従来のＭＯ”／ＰＥ装置の構
成図である。
４４・・・・・・石英炉芯管（結晶成長室）、４６・・
・・・・サセプタ、１０３・・・・・・混合部Ｂ、１０
６・・・・・・混合器本体、２００・・・・・・基板。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図 ｔｏｏ−Ａｏ
１蒋−敢予
第４図
ソ炙（ｎｍ ］Fig. 1 is a schematic cross-sectional view of a mixer used in the method of an embodiment of the present invention, Fig. 2 is a configuration diagram of a MOVPE device using the method of this embodiment, and Fig. 3 is a schematic cross-sectional view of a mixer used in the method of the embodiment of the present invention. SQW
A cross-sectional view of the layer, Fig. 4 is a characteristic diagram showing the 2-odorluminescence of the same SQW layer, and Fig. 5 is a configuration diagram of a conventional MO''/PE device. 44...Quartz furnace core Tube (crystal growth chamber), 46...
...Susceptor, 103...Mixing part B, 10
6... Mixer main body, 200... Board. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure too-Ao 1 Jiang-Yanyu Figure 4 So-fu (nm]
Claims (3)
室内に載置されたサセプタ上の基板上に薄膜を形成する
に際し、第１の同一族元素反応ガスの全てと第２の同一
族元素反応ガスの少なくとも１種を同一混合器を介して
前記結晶成長室に導入してなる気相成長方法。(1) When introducing a reactive gas into the crystal growth chamber and forming a thin film on the substrate on the susceptor placed in the crystal growth chamber, all of the first homogeneous element reactive gas and the second homogeneous element reactive gas are introduced into the crystal growth chamber. A vapor phase growth method comprising introducing at least one elemental reaction gas into the crystal growth chamber through the same mixer.
を介して入口側よりも細い管からなる混合器を用いる特
許請求の範囲第１項に記載の気相成長方法。(2) The vapor phase growth method according to claim 1, in which a mixer consisting of a tube narrower than the inlet side is used via an orifice that is provided on the inlet side and whose opening/closing degree can be adjusted.
、出口側の細い管の断面積の直径はほぼ１／８インチで
ある混合器を用いる特許請求の範囲第１項に記載の気相
成長方法。（４）減圧有機金属気相成長を行う特許請求
の範囲第１項に記載の気相成長方法。(3) Claim 1 using a mixer in which the diameter of the cross-sectional area on the inlet side is approximately 1/4 inch, and the diameter of the cross-sectional area of the narrow tube on the outlet side is approximately 1/8 inch. vapor phase growth method. (4) The vapor phase growth method according to claim 1, which performs reduced pressure organometallic vapor phase growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6154487A JPS63227008A (en) | 1987-03-17 | 1987-03-17 | Vapor growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6154487A JPS63227008A (en) | 1987-03-17 | 1987-03-17 | Vapor growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63227008A true JPS63227008A (en) | 1988-09-21 |
Family
ID=13174167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6154487A Pending JPS63227008A (en) | 1987-03-17 | 1987-03-17 | Vapor growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63227008A (en) |
-
1987
- 1987-03-17 JP JP6154487A patent/JPS63227008A/en active Pending
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