JPS63226012A - Method of controlling collapse magnetic field temperature coefficient of magnetic bubble garnet crystal - Google Patents
Method of controlling collapse magnetic field temperature coefficient of magnetic bubble garnet crystalInfo
- Publication number
- JPS63226012A JPS63226012A JP5791587A JP5791587A JPS63226012A JP S63226012 A JPS63226012 A JP S63226012A JP 5791587 A JP5791587 A JP 5791587A JP 5791587 A JP5791587 A JP 5791587A JP S63226012 A JPS63226012 A JP S63226012A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- temperature coefficient
- magnetic field
- collapse
- garnet crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000002223 garnet Substances 0.000 title claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 5
- 239000007791 liquid phase Substances 0.000 claims abstract description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 4
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000002994 raw material Substances 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 241000722946 Acanthocybium solandri Species 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
磁気バブルガーネット結晶（ＹＬｕＡ） ｓ （ＦｅＸ
） ｓＯ１ｇ（但し、Ａは希土類元素、’Ｃａ、Ｂｉま
たはこれらの混合物、ＸはＧａ、Ｇｅ、Ａ＋ｇ 、 Ｓ
ｉ、Ｓｃ、Ｖ 、 Ｒｕ。[Detailed description of the invention] [Summary] Magnetic bubble garnet crystal (YLuA) s (FeX
) sO1g (A is a rare earth element, 'Ca, Bi or a mixture thereof, X is Ga, Ge, A+g, S
i, Sc, V, Ru.
Ｃｏまたはこれらの混合物）の原料溶液中のＦｅと希土
類元素のモル比を調整することにより、エピタキシャル
結晶薄膜と基板との格子整合を良好に保ちつつ、コラプ
ス磁界の温度係数ΔＨｏ（０℃）をコントロールできる
ようにした。By adjusting the molar ratio of Fe and rare earth elements in the raw material solution of Co or a mixture thereof, the temperature coefficient ΔHo (0°C) of the collapse magnetic field can be adjusted while maintaining good lattice matching between the epitaxial crystal thin film and the substrate. I was able to control it.
本発明は磁気バブルメモリの記憶媒体として用いる単結
晶磁性薄膜の温度特性（特にコラプス磁界の温度係数）
の調整法に関するものである。The present invention relates to the temperature characteristics (especially the temperature coefficient of the collapse magnetic field) of a single crystal magnetic thin film used as a storage medium of a magnetic bubble memory.
This is related to the adjustment method.
磁気バブルメモリにおいてはバイアス磁石とバブル結晶
との温度特性を合わせることにより、記憶ディバイスの
動作の安定を図る必要があるため、例えば米国特許第４
．３３８．３７２号に記載されている如くバブル結晶の
コラプス磁界温度係数（ΔＨＯ（０℃））を調整するこ
とが行なわれる。上記特許の方法では、一般式（ＹＳｍ
ＬｕＣａ）ａ−ｘ Ｇｄｘ （Ｆｅｓ−ｙＧｅｙ ）Ｏ
ａｔで組成が表わされるＧｄ５ＧａｓＯ＋ｚ結晶のＸ。In magnetic bubble memory, it is necessary to stabilize the operation of the storage device by matching the temperature characteristics of the bias magnet and bubble crystal.
．． The collapse magnetic field temperature coefficient (ΔHO (0° C.)) of the bubble crystal is adjusted as described in No. 338.372. In the method of the above patent, the general formula (YSm
LuCa)a-x Gdx (Fes-yGey)O
X of Gd5GasO+z crystal whose composition is represented by at.
７モル数を調節することによって、ゼロに近い、具体的
には−０，０７〜０．０５の％／℃コラプス磁界温度係
数｛Ｈｏ）を得ている。By adjusting the number of moles, a %/°C collapse magnetic field temperature coefficient {Ho) close to zero, specifically, −0.07 to 0.05, is obtained.
また、本発明者の米国特許第４．５６８．６１８号にお
いて
コラプス磁界温度係数ΔＨｏ（０℃）をバイアスフェラ
イト磁石の残留磁化の温度係数ΔＨｒ （０℃）より
０．０１〜０．０４％／℃小さくすることにより、動作
温度範囲を拡大することが提案された。またこの特許で
開示されたコラプス磁界温度係数ΔＨａ（０℃）の具体
的調整方法は原料溶液中のＬｕｚｏｌの量を変えること
により結晶中の八面体位置のＬｕイオン（■、％ １″
）量を調整して希望のΔＨｏ（０℃）を得るものである
。In addition, in U.S. Patent No. 4.568.618 by the present inventor, the temperature coefficient of collapse magnetic field ΔHo (0°C) is 0.01 to 0.04%/ It has been proposed to expand the operating temperature range by decreasing the temperature. Furthermore, the specific method for adjusting the collapse magnetic field temperature coefficient ΔHa (0°C) disclosed in this patent is to change the amount of Luzol in the raw material solution to reduce the amount of Lu ions (■, % 1″) at the octahedral positions in the crystal.
) to obtain the desired ΔHo (0°C).
すなわち、フェライト磁石の残留磁化の温度係数ΔＨ１
（０℃）は約−０，１９％／℃であるので、Ｌｕイオン
の添加量により、−０，２０〜−０，２３％／℃のコラ
プス磁界の温度係数ΔＨＯ（０℃）を得る。That is, the temperature coefficient ΔH1 of the residual magnetization of the ferrite magnet
(0°C) is about -0.19%/°C, so depending on the amount of Lu ions added, a temperature coefficient ΔHO (0°C) of the collapse magnetic field of -0.20 to -0.23%/°C is obtained.
Ｃ発明が解決しようとする問題点〕
磁気バブルガーネット結晶（ＹＬｕＡ） ｓ （ＦｅＸ
） ｓＯｌｚ（世し、Ａは希土類元素、Ｃａ、Ｂｉまた
はこれらの混合物、ＸはＧａ、Ｇｅ、Ａ ｌ 、 Ｓｔ
、Ｓｃ、Ｖ 、 Ｒｕ。Problems to be solved by invention C] Magnetic bubble garnet crystal (YLuA) s (FeX
) sOlz (A is a rare earth element, Ca, Bi or a mixture thereof, X is Ga, Ge, Al, St
, Sc, V, Ru.
Ｃｏまたはこれらの混合物）のコラプス磁界温度係数Ｈ
ｏ（０℃）をＬｕ”の添加量により調整する前掲米国特
許第４．５６８．６１８号の方法では、Ｌｕ３“はイオ
ン半径が小さいためにＬｕ’°が多く入るとバブル結晶
の格子定数が小さくなり、格子定数ａｓ ”１２．３８
３人基板結晶（ＧＧＧ）との格子不整合が大きくなる。Collapse magnetic field temperature coefficient H of Co or a mixture thereof)
In the method of the above-mentioned US Pat. No. 4,568,618, in which the 0°C is adjusted by the amount of Lu' added, the lattice constant of the bubble crystal changes when a large amount of Lu'° is added because Lu3' has a small ionic radius. becomes smaller, and the lattice constant as ”12.38
The lattice mismatch with the triple substrate crystal (GGG) increases.
米国特許第４，５６８．６１８号では、Ｌｕ／Ａのモル
比が２．０〜２．５の磁気バブルガーネット結晶のコラ
プス磁界温度係数Ｈｏの調整がＬ ｕ３ ＋により行な
われていたので、著しい格子不整合を招かないような少
ないＬ ｕ ３ ＋添加量で所望のコラプス磁界温度係
数Ｈｏが得られていた。In U.S. Pat. No. 4,568.618, the collapse magnetic field temperature coefficient Ho of a magnetic bubble garnet crystal with a Lu/A molar ratio of 2.0 to 2.5 was adjusted by Lu3 +, so that it was remarkable. The desired collapse magnetic field temperature coefficient Ho was obtained with a small amount of L u 3 + added that would not cause lattice mismatch.
ところが、Ｌｕ／Ａ＞２．５の磁気バブルガーネット結
晶では、Ｌ ｕ”の添加量増減によっては、コラプス磁
界の温度係数Ｈｏはほとんど変わらず、一方格子不整合
のみが目立つという問題が現われたので、この問題を解
決する必要が生じた。However, in magnetic bubble garnet crystals with Lu/A > 2.5, the temperature coefficient Ho of the collapse magnetic field hardly changes depending on the amount of Lu'' added, and on the other hand, a problem appeared in which only the lattice mismatch was noticeable. , the need arose to solve this problem.
ところで、磁気バブル結晶と基板の格子不整合を少なく
することに着目した特許として、米国特許第４．１６９
．１８９号があるが、この明細書によると、ガドリニウ
ムガリウムガーネットの（１１０）基板上に成長される
バブル結晶の格子不整合（ａｔ−ａｔ）／ａｔを−６Ｘ
１０−３〜−２ Ｘ １０−３の範囲内にする方法と
して、（Ｅｕ３−ｘ Ｌｕ＋ｃ ）（Ｐｅｓ−ｙ Ｇａ
、 ）０＋を結晶のＬｕ１ｉ（ｘ）とＦｅ量（５−ｙ）
とを関連させて調整することが提案されている。しかし
、上記した（Ｙｌ、ｕＡ） ３ （ＦｅＸ） ｓｏ ＋
を組成の結晶ではこのような調整法に示されたＬｕ、
Ｆｅモル範囲は有効ではない。By the way, US Patent No. 4.169 is a patent that focuses on reducing the lattice mismatch between the magnetic bubble crystal and the substrate.
．． No. 189, and according to this specification, the lattice mismatch (at-at)/at of a bubble crystal grown on a (110) substrate of gadolinium gallium garnet is -6X.
As a method to make it within the range of 10-3 to -2 x 10-3, (Eu3-x Lu+c)(Pes-y Ga
, )0+ is Lu1i (x) and Fe amount (5-y) of the crystal
It is proposed that adjustments be made in relation to However, the above (Yl, uA) 3 (FeX) so +
In the crystal with the composition shown in this preparation method, Lu,
Fe molar ranges are not valid.
前掲米国特許第４，３３８．３７２号は、上述したよう
に（ＹＳｍＬｕＣａ）Ｇｄ （ＦｅＧｅ） Ｏ＋ ｚ結
晶組成のＧｄとＧｅをあるモル量範囲にすることにより
、コラプス磁界の温度係数を調整することを開示するか
ら、この特許の方法はＧｄを含まない磁気バブル結晶の
コラプス磁界温度係数Ｈｏの調整法を何ら示唆しないこ
とは当然である。The above-mentioned U.S. Pat. No. 4,338.372 discloses that, as mentioned above, the temperature coefficient of the collapse magnetic field is adjusted by adjusting the molar amount of Gd and Ge in the (YSmLuCa)Gd(FeGe)O+z crystal composition to a certain range. It is natural that the method of this patent does not suggest any method for adjusting the collapse magnetic field temperature coefficient Ho of a magnetic bubble crystal that does not contain Gd.
本発明は、磁気バブルガーネット結晶（ＹＬｕＡ）ａ（
ＦｅＸ）ｓＯ＋ｔ （但し、Ａは希土類元素、Ｃａ、Ｂ
ｉまたはこれらの混合物、ＸはＧａ、Ｇｅ、Ａ Ｉ 、
Ｓｉ。The present invention provides magnetic bubble garnet crystal (YLuA) a(
FeX) sO+t (However, A is a rare earth element, Ca, B
i or a mixture thereof, X is Ga, Ge, A I ,
Si.
Ｓｃ、Ｖ 、Ｒｕ、Ｃｏまたはこれらの混合物）の溶液
のＲ１＝ Ｐｅｔｏｓ ／ ＲｔＯｓ （但し、ＲｔＯ
ｓは溶液中のＹｚＯｉおよび希土類酸化物の総１）の値
を９．３〜１８．０の範囲で変えることにより液相エピ
タキシャル成長させた該結晶のコラプス磁界温度係数Δ
Ｈｏ（０℃）＝ （１／Ｈｏ（０℃））・（（Ｈ。R1 = Petos/RtOs (where RtO
s is the collapse magnetic field temperature coefficient Δ of the crystal grown by liquid phase epitaxial growth by changing the total value 1) of YzOi and rare earth oxide in the solution in the range of 9.3 to 18.0.
Ho(0℃)=(1/Ho(0℃))・((H.
（７５℃）−Ｈｏ（０℃） ） ／ （７５℃−０℃
）〕・１００を−０，２３ｓ〜−０，２０，％／℃の範
囲でコントロールすることを特徴とする磁気バブルガー
ネット結晶のコラプス磁界温度係数の制御方法である。(75℃)-Ho(0℃) ) / (75℃-0℃
)].100 in the range of -0.23 s to -0.20.%/°C.
以下、本発明の構成を詳しく説明する。 Hereinafter, the configuration of the present invention will be explained in detail.
磁気バブル結晶として使用される（ＹＳｍＬｕＣａ）
、３（ＦｅＧｅ） ５０ ＋ ｔの単結晶薄膜は、Ｙｚ
Ｏｚ 、５ＩＩＪ３１１ｔＯｚ＋ＣａＣ０＋＋ＦｅｚＯ
＊、Ｇｅ０ｔの原料酸化物を混合して溶媒中に溶解し、
この溶液を用いて液相成長法により育成する。上記の溶
媒には通常ＰｂＯとＢｔＯｚの混合物（フラックス）を
使用する。これらの酸化物を電気炉中で約１１００℃の
温度で溶解し、温度を下げて過冷却状態を実現する。そ
してこの過飽和溶液中にＧ（Ｌ＋Ｇａ５０＋ ｚ基板を
浸漬することにより単結晶磁性薄膜を育成する。Used as magnetic bubble crystal (YSmLuCa)
, 3(FeGe) 50 + t single crystal thin film is Yz
Oz, 5IIJ311tOz+CaC0++FezO
*, Ge0t raw material oxides are mixed and dissolved in a solvent,
This solution is used to grow by a liquid phase growth method. A mixture (flux) of PbO and BtOz is usually used as the above solvent. These oxides are melted in an electric furnace at a temperature of about 1100° C., and the temperature is lowered to achieve a supercooled state. Then, a single crystal magnetic thin film is grown by immersing a G(L+Ga50+ z substrate) in this supersaturated solution.
表１は本発明の実施例で原料溶液中のＲ１の値および育
成結晶の特性を示す。Table 1 shows the value of R1 in the raw material solution and the characteristics of the grown crystal in Examples of the present invention.
以下余白
表１．溶液のＲ１と育成結晶の特性
なお、表中に使用した特性表示の意味は次のとおりであ
る。Margin table 1 below. R1 of solution and characteristics of grown crystals The meanings of the characteristics used in the table are as follows.
ｈ：膜厚
Ｓ−：磁区幅
４πＭｓ：飽和磁化
■にニー軸異方性磁界
Δａ：格子定数の不整合
ΔＨｏ （０℃）：コラプス磁界の温度係数Ｒ＋ ”
ＦｅｚＯ＝ ／ ＲｚＯ＋
Δａ ＝ａ＠ ａｙ （ａｓ ：基板結晶の格子定
数、ａ、：エピタキシャル成長膜の格子定数）このとき
溶液中のＲ５がコラプス磁界の温度係数（ΔＨｏ（０℃
））に与える影響を第１図に示す。h: Film thickness S-: Domain width 4πMs: Knee-axis anisotropy magnetic field at saturation magnetization ■ Δa: Mismatch of lattice constant ΔHo (0°C): Temperature coefficient R+ of collapse magnetic field
FezO= / RzO+ Δa = a@ay (as: lattice constant of the substrate crystal, a: lattice constant of the epitaxially grown film) At this time, R5 in the solution is the temperature coefficient of the collapse magnetic field (ΔHo (0°C
)) is shown in Figure 1.
図１は表１の結晶のΔＨｏ（０℃）とＲ１との関係であ
る６図から明らかなようにＲ，＝９．３〜１８．０の範
囲で変えることによりΔＨＯ（０℃）が−０，２３゜〜
−０，２０，％／℃まで変化する。この時のΔａの変化
は表１より０〜＋３．５Ｘ１０−’人で基板との格子定
数の整合は良好である。Figure 1 shows the relationship between ΔHo (0°C) and R1 of the crystal in Table 1. As is clear from Figure 6, by changing R in the range of 9.3 to 18.0, ΔHO (0°C) can be reduced to - 0,23°〜
It varies up to -0,20,%/℃. As shown in Table 1, the change in Δa at this time is 0 to +3.5×10 −′, indicating good matching of the lattice constant with the substrate.
以上述べたように本発明によれば結晶原料溶液中のＲ６
を変えることによりΔａを小さく保ってΔＨｏ（０℃）
を調整することができる。As described above, according to the present invention, R6 in the crystal raw material solution
By changing Δa, ΔHo (0℃) can be kept small.
can be adjusted.
本発明によれば、上記した（ＹＬｕＡ） ｚ （ＦｅＸ
） ｓｏ ＋ ｚ組成について、基板と育成結晶の格子
定数の整合を良好に保って育成結晶のΔＨＯ（０℃）を
調整することができる。According to the present invention, (YLuA) z (FeX
) Regarding the so + z composition, it is possible to adjust the ΔHO (0° C.) of the grown crystal while keeping good lattice constant matching between the substrate and the grown crystal.
第１図はΔＨｏ（０℃）のＲ９依存性を示すグラフであ
る。FIG. 1 is a graph showing the R9 dependence of ΔHo (0° C.).
Claims (1)
Ｘ）＿３Ｏ＿１＿２（但し、Ａは希土類元素、Ｃａ、Ｂ
ｉまたはこれらの混合物、ＸはＧａ、Ｇｅ、Ａｌ、Ｓｉ
、Ｓｃ、Ｖ、Ｒｕ、Ｃｏまたはこれらの混合物）の成分
を溶解した溶液のＲ＿１＝Ｆｅ＿２Ｏ＿３／Ｒ＿２Ｏ＿
３（但し、Ｒ＿２Ｏ＿３は溶液中のＹ＿２Ｏ＿３および
希土類酸化物の総量）の値を９．３〜１８．０の範囲で
変えることにより液相エピタキシャル成長させた該結晶
のコラプス磁界温度係数ΔＨｏ（０℃）＝｛１／Ｈｏ（
０℃）｝・〔｛Ｈｏ（７５℃）−Ｈｏ（０℃）｝／（７
５℃−０℃）〕・１００を−０．２３＿８〜−０．２０
＿９％／℃の範囲でコントロールすることを特徴とする
磁気バブルガーネット結晶のコラプス磁界温度係数の制
御方法。[Claims] 1. Magnetic bubble garnet crystal (YLuA)_3 (Fe
X)_3O_1_2 (However, A is a rare earth element, Ca, B
i or a mixture thereof, X is Ga, Ge, Al, Si
, Sc, V, Ru, Co or a mixture thereof) R_1=Fe_2O_3/R_2O_
3 (where R_2O_3 is the total amount of Y_2O_3 and rare earth oxide in the solution) is the collapse magnetic field temperature coefficient ΔHo (0°C) of the crystal grown by liquid phase epitaxial growth by changing the value in the range of 9.3 to 18.0. ={1/Ho(
0℃)}・[{Ho(75℃)−Ho(0℃)}/(7
5℃-0℃)]・100 -0.23_8~-0.20
A method for controlling the collapse magnetic field temperature coefficient of a magnetic bubble garnet crystal, characterized by controlling it within a range of _9%/°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5791587A JPS63226012A (en) | 1987-03-14 | 1987-03-14 | Method of controlling collapse magnetic field temperature coefficient of magnetic bubble garnet crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5791587A JPS63226012A (en) | 1987-03-14 | 1987-03-14 | Method of controlling collapse magnetic field temperature coefficient of magnetic bubble garnet crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63226012A true JPS63226012A (en) | 1988-09-20 |
Family
ID=13069291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5791587A Pending JPS63226012A (en) | 1987-03-14 | 1987-03-14 | Method of controlling collapse magnetic field temperature coefficient of magnetic bubble garnet crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63226012A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03104104A (en) * | 1989-09-18 | 1991-05-01 | Shin Etsu Chem Co Ltd | Magnetic garnet material |
-
1987
- 1987-03-14 JP JP5791587A patent/JPS63226012A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03104104A (en) * | 1989-09-18 | 1991-05-01 | Shin Etsu Chem Co Ltd | Magnetic garnet material |
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