JPS63225463A - Image pickup tube - Google Patents
Image pickup tubeInfo
- Publication number
- JPS63225463A JPS63225463A JP5821887A JP5821887A JPS63225463A JP S63225463 A JPS63225463 A JP S63225463A JP 5821887 A JP5821887 A JP 5821887A JP 5821887 A JP5821887 A JP 5821887A JP S63225463 A JPS63225463 A JP S63225463A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent conductive
- light
- electrode
- mesh
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 230000000694 effects Effects 0.000 abstract description 21
- 239000011651 chromium Substances 0.000 abstract description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052804 chromium Inorganic materials 0.000 abstract description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 4
- 239000011733 molybdenum Substances 0.000 abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 230000003449 preventive effect Effects 0.000 abstract 3
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、メツシュ状電極を有する撮像管に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an image pickup tube having mesh-like electrodes.
本発明は、使用波長帯域内の光が光電変換膜を透過して
メツシュ状電極に到達する撮像管において、メツシュ状
電極上に反射防止膜を形成することＬ二より、メツシュ
状電極からの反射光を大幅に低下させ、フレアを防止す
るようにしたものである。In the present invention, in an image pickup tube in which light within the used wavelength band passes through a photoelectric conversion film and reaches a mesh-like electrode, an anti-reflection film is formed on the mesh-like electrode. This greatly reduces light intensity and prevents flare.
第８図は撮像管のターゲツト面周辺を示す図である。同
図において、（１１はフェースプレート、（２）及び（
３）はターゲツト面を構成する透明導電膜及び光電変換
膜であり、（４）はフェースブレー） （１）を通過し
て透明導電膜（２）に電気的に接続された信号取出し用
の信号電極である。FIG. 8 is a diagram showing the vicinity of the target surface of the image pickup tube. In the figure, (11 is a face plate, (2) and (
3) is a transparent conductive film and a photoelectric conversion film constituting the target surface, and (4) is a face brake.) A signal for signal extraction that passes through (1) and is electrically connected to the transparent conductive film (2). It is an electrode.
また、（５）はガラスバルブ、（６）は金属リング、（
７）はインジウムであり、ガラスバルブ（５）とフェー
スプレート（１）はインジウム（７）で冷封止されてい
る。In addition, (5) is a glass bulb, (6) is a metal ring, (
7) is indium, and the glass bulb (5) and face plate (1) are cold-sealed with indium (7).
また、（８）は電子ビームのランディングエラーを補正
するためのメツシュ状電極であり、メツシュホルダー（
９）を介してインジウム（７）に機械的かつ電気的に接
続されている。このメツシュ状電極（８）には金属リン
グ（６）、インジウム（７）及びメツシュホルダー（９
）を介して所定電圧が印加される。In addition, (8) is a mesh-like electrode for correcting the landing error of the electron beam, and the mesh holder (
9) is mechanically and electrically connected to indium (7). This mesh-like electrode (8) includes a metal ring (6), indium (7) and a mesh holder (9).
) A predetermined voltage is applied through the terminal.
この第８図例のような撮像管において、光電変換膜（３
）に供給される光が、この光電変換膜（３）を透遇して
メツシュ状電極（８）に到達するときには、このメツシ
ュ状電極（８）で光が散乱反射され、再び光電変換膜（
３）に入射し、信号電流となり、フレアが生じる不都合
があった。In an image pickup tube like the example in FIG. 8, a photoelectric conversion film (3
When the light supplied to the photoelectric conversion film (3) passes through the photoelectric conversion film (3) and reaches the mesh-like electrode (8), the light is scattered and reflected by the mesh-like electrode (8), and the light passes through the photoelectric conversion film (3) and reaches the mesh-like electrode (8).
3) and becomes a signal current, causing a flare.
例えば、３管式カラーカメラの各色撮像管の光電変換膜
（３）としてＳｅ （セレン）−ＡｓＣヒ素）−Ｔｅ
（テルル）膜が使用される場合、青色光、緑色光は
このＳｅ −Ａｓ −Ｔｅ ｌＱをほとんど透過しない
ので、青色撮像管、緑色撮像管ではフレアを生じないが
、このＳｅ −Ａｓ −Ｔｅ［１に対する赤色光の透過
率は高く、このＳｓ −Ａｓ −Ｔｅ膜は赤色光の波長
帯域では感度（量子効率）が低いものの、フレアを生じ
る。したがって、３管式カラーカメラに白色光の強い光
が入射すると、画像としては白色部の周辺に赤のフレア
が出て、画質が著しく劣化する不都合があった。For example, the photoelectric conversion film (3) of each color image pickup tube of a three-tube color camera is made of Se (Se (Se)-AsCArsenic)-Te.
When a (tellurium) film is used, blue light and green light hardly pass through this Se-As-Te IQ, so flare does not occur in blue and green image pickup tubes, but this Se-As-Te[ The transmittance of red light relative to No. 1 is high, and although this Ss-As-Te film has low sensitivity (quantum efficiency) in the wavelength band of red light, flare occurs. Therefore, when strong white light is incident on a three-tube color camera, red flare appears around the white portion of the image, resulting in a disadvantage that the image quality is significantly degraded.
因みに、第９図において、曲線ａは通常のＳｅ膜の感度
の最大点を１００％として表わしたものである。また、
曲線Ｃは赤色撮像管に供給される赤色光を通過せしめる
色フィルタの透過率、曲線ｄはＳｅ −Ａｓ−Ｔｅ膜の
透過率であり、赤色光の透過率が高く、特に高感度Ｓｅ
−Ａｓ −Ｔｅｌ’ｊ４においては赤色光の波長帯域
でも感度が高く、上述したように赤のフレアが問題とな
る。Incidentally, in FIG. 9, curve a represents the maximum sensitivity point of a normal Se film as 100%. Also,
Curve C is the transmittance of a color filter that passes red light supplied to the red image pickup tube, and curve d is the transmittance of a Se-As-Te film.
-As-Tel'j4 has high sensitivity even in the wavelength band of red light, and red flare becomes a problem as described above.
このようなフレアに対する対策としては、メツシュ状電
極（８）の反射率を低下させることが、従来提案されて
いる。一般的にメツシュ状電極（８）は銅製であり、銅
（Ｃｕ）は、第１Ｏ図に示すように赤色光（第９図曲線
Ｃ参照）に対する反射率の大きな金属である。そこで、
メツシュ状電極（８）上に単に例えばクロム（Ｃｒ）を
蒸着等でコーティングして反射率を低下させることも考
えられているが、反射率はせいぜい１／３程度に低下で
きるだけで不充分であった。As a countermeasure against such flare, it has been conventionally proposed to reduce the reflectance of the mesh-like electrode (8). Generally, the mesh-like electrode (8) is made of copper, and copper (Cu) is a metal that has a high reflectance for red light (see curve C in FIG. 9) as shown in FIG. 1O. Therefore,
It has been considered to reduce the reflectance by simply coating the mesh-like electrode (8) with, for example, chromium (Cr) by vapor deposition, but the reflectance can only be reduced to about 1/3 at most, which is insufficient. Ta.
なお、特開昭５６−１１８２４９号には、目的は異なる
が、メツシュ状電極上にクロム等の金属膜を被着するこ
とが示されている。Incidentally, Japanese Patent Laid-Open No. 118249/1983 discloses that a metal film such as chromium is deposited on a mesh-like electrode, although the purpose is different.
本発明は斯る点に鑑み、メツシュ状電極の反射率を大幅
に低下させ、フレアの防止を図るものである。In view of this point, the present invention aims to significantly reduce the reflectance of the mesh-like electrode to prevent flare.
本発明は、使用波長帯域内の光が光電変換膜（３）を透
過してメツシュ状電極（８）に到達する撮像管であって
、メツシュ状電極（８）上に、金属膜（１０）及び透明
導電膜（１１）がこの順序で被着された使用波長帯域内
の光の反射防止膜が形成されるものである。The present invention provides an image pickup tube in which light within a used wavelength band passes through a photoelectric conversion film (3) and reaches a mesh-like electrode (8), in which a metal film (10) is provided on the mesh-like electrode (8). and a transparent conductive film (11) are deposited in this order to form an antireflection film for light within the usable wavelength band.
例えば金属膜（１０）としてはクロム（Ｃｒ）、タング
ステン（Ｗ）、モリブデン（Ｍｏ）等が使用され、透明
導電！５！１（１１）としてはＩＴＯ、ネサ（商品名）
等が使用される。For example, chromium (Cr), tungsten (W), molybdenum (Mo), etc. are used as the metal film (10), and transparent conductive! 5!1 (11) is ITO, Nesa (product name)
etc. are used.
上述構成においては、透明導電膜（１１）と金属１１Ｇ
Ｉ（１０）とで干渉効果を利用した反射防止膜が構成さ
れ、メツシュ状電極（８）から光電変換膜（３）への反
射光は大幅に減少される。In the above configuration, the transparent conductive film (11) and the metal 11G
I (10) constitutes an antireflection film that utilizes interference effects, and the reflected light from the mesh electrode (8) to the photoelectric conversion film (3) is significantly reduced.
以下、第１図を参照しながら本発明の一実施例について
説明する０本例は、赤色光の反射を減少させるようにし
た例である。Hereinafter, one embodiment of the present invention will be described with reference to FIG. 1. This embodiment is an example in which reflection of red light is reduced.
本例においては、メツシュ状電極（８）上にクロム（Ｃ
ｒ）よりなる金属膜（１０）が蒸着によって形成される
と共に、この金属膜（ｌＯ）の上にＩＴＯよりなる透明
導電膜（１１）が蒸着によって形成され、これらにより
干渉効果を利用した反射防止膜が構成される。In this example, chromium (C
A metal film (10) made of r) is formed by vapor deposition, and a transparent conductive film (11) made of ITO is formed on this metal film (lO) by vapor deposition, thereby preventing reflection using interference effects. A membrane is formed.
ここで、第２図に示すように、屈折率ｎ（の透明物質Ａ
と、屈折率ｎ（の物質Ｂとが積層されたものにおいて、
透明物質Ａ側より波長λの光りが垂直入射する場合、反
射光が干渉効果によって零となるためには、
λ
ｎ４ Ｘ ｔ ＝ｍ （ｒｎ＝１＋ ３＋ ５ｓ
・”） ｏｎ−・（１１の二つの条件を満足しなければ
ならないことが知られている。Here, as shown in FIG. 2, a transparent material A with a refractive index n (
and a material B with a refractive index n() are laminated,
When light with wavelength λ is perpendicularly incident from the transparent material A side, in order for the reflected light to become zero due to the interference effect, λ n4 X t = m (rn = 1 + 3 + 5s
・”) on-・(It is known that the two conditions of 11 must be satisfied.
メツシュ状電ｐｆＡ（８）の材料である銅の屈折率の実
数部及び虚数部は、夫々第３図実線ａ （ｎ）及びａ
（ｋ）に示すように波長６００ｒ＋ｍ付近で急激に変化
する。The real part and imaginary part of the refractive index of copper, which is the material of mesh-like electrode pfA (8), are shown by the solid lines a (n) and a in Figure 3, respectively.
As shown in (k), the wavelength changes rapidly around 600r+m.
この屈折率を用いて、メツシュ状電極（８）の上に屈折
率ｎ＃２の透明導電膜（１１）を直接蒸着した場合にお
ける、例えばフレア効果の大きな波長６５０ｎｍの赤色
光に対する反射特性のシミュレーション結果は第４図に
示すようになり、反射率の低下効果はほとんどない。第
４図において、横軸は透明導電膜の厚さｄである。Using this refractive index, we simulate the reflection characteristics for, for example, red light with a wavelength of 650 nm, which has a large flare effect, when a transparent conductive film (11) with a refractive index of n#2 is directly deposited on the mesh-like electrode (8). The results are shown in FIG. 4, and there is almost no effect of lowering the reflectance. In FIG. 4, the horizontal axis is the thickness d of the transparent conductive film.
ところが、クロムの屈折率の実数部及び虚数部は、夫々
第３図破線ｂ （ｎ）及びｂ （ｋ）に示すように可視
光域で比較的一定である。この屈折率を用いて、メツシ
ュ状電極（８）の上にクロムよりなる金属膜（１０）を
蒸着したのち透明導電膜（１１）を蒸着した場合におけ
る、例えばフレア効果の大きな波長６５０ｎｍの赤色光
に対する反射特性のシミュレーション結果は、第５図に
示すようになり、反射率の低下効果は非常に高くなる。However, the real part and imaginary part of the refractive index of chromium are relatively constant in the visible light range, as shown by broken lines b (n) and b (k) in FIG. 3, respectively. Using this refractive index, for example, when a metal film (10) made of chromium is vapor-deposited on the mesh-like electrode (8) and then a transparent conductive film (11) is vapor-deposited, red light with a wavelength of 650 nm, which has a large flare effect, can be used. The simulation results of the reflection characteristics are shown in FIG. 5, and the effect of reducing the reflectance is very high.
第５図において横軸は透明導電膜の厚さｄである。In FIG. 5, the horizontal axis is the thickness d of the transparent conductive film.
第６図は分光器によって反射率の変化を測定したもので
あり、曲線ａ、ｂ、ｃ及びｄは、夫々金属膜（１０）の
厚さ力く０人、１００人、２２５人及び４３０人の場合
を示している。この図からも明らがなように、例えばフ
レア効果の大きな波Ｗｔ ６５０ｎｍの赤色光に対して
は、金属膜（１０）の厚さが１００人程度ではメツシュ
状電極（８）の銅の影響が出てしまう。したがって本例
においては、金Ｅｌｌｆｆ（１０）の厚さは２００Å以
上、例えば３００人とされる。Figure 6 shows changes in reflectance measured using a spectrometer, and curves a, b, c, and d represent the thickness of the metal film (10) of 0, 100, 225, and 430, respectively. The case is shown below. As is clear from this figure, for example, when the thickness of the metal film (10) is about 100 nm, the effect of the copper of the mesh electrode (8) on red light of 650 nm, which has a large flare effect. will appear. Therefore, in this example, the thickness of the gold Ellff (10) is 200 Å or more, for example, 300 Å.
また金属膜（１０）の厚さが３００人で透明導電膜（Ｉ
ｆ）の厚さが７００人のときの反射率を分光器によって
測定すると、第７図曲線Ｃに示すように変化した。即ち
、透明導電膜（１１）の厚さが７００人のときにフレア
効果の大きな波長６５０ｎｍの赤色光に対する干渉効果
が大となって反射率が低くなる。In addition, the thickness of the metal film (10) is 300 people, and the transparent conductive film (I
When the reflectance of layer f) was measured using a spectrometer when the thickness was 700 mm, it changed as shown in curve C in FIG. That is, when the thickness of the transparent conductive film (11) is 700 nm, the interference effect with respect to red light with a wavelength of 650 nm, which has a large flare effect, becomes large and the reflectance becomes low.
したがって本例においては、透明導電ＨＩＪ！（エエ）
の厚さｄは７００人とされる。完全に上述（１）式を満
たさないのは、メツシュ状電極（８）のメツシュが平坦
でなく、所定の曲率を有しているためと考えられる。Therefore, in this example, transparent conductive HIJ! (eee)
The thickness d is said to be 700 people. The reason why the above formula (1) is not completely satisfied is considered to be because the mesh of the mesh electrode (8) is not flat and has a predetermined curvature.
尚、第７図すの曲線は金属膜（１０）のみ蒸着したとき
の反射率の変化であり、同図ａの曲線は金属膜（１０）
も蒸着しないときの反射率変化である。The curve in Figure 7 (a) shows the change in reflectance when only the metal film (10) is deposited, and the curve in Figure 7 (a) shows the change in reflectance when only the metal film (10) is deposited.
is also the change in reflectance when no vapor deposition is performed.
本例は以上のように構成され、メツシュ状電極（８）の
上に金属膜（１０）及び透明導電膜（１１）よりなる干
渉効果を利用した反射防止膜が形成され、フレア効果の
大きな波長６５０ｎｍの赤色光に対する干渉効果が大と
なり、その赤色光の反射率は非常に低くなる。したがっ
て、光電変換膜（３）を透過し７メツシユ状電極（８）
に到達する赤色光の光電変換膜（３）への反射は極めて
小となり、赤のフレアはほとんど生じなくなる。This example is constructed as described above, and an anti-reflection film that utilizes the interference effect is formed on the mesh-like electrode (8) by the metal film (10) and the transparent conductive film (11), and the wavelength with a large flare effect is The interference effect with respect to red light of 650 nm becomes large, and the reflectance of the red light becomes very low. Therefore, the 7 mesh electrodes (8) pass through the photoelectric conversion film (3).
The reflection of the red light reaching the photoelectric conversion film (3) becomes extremely small, and almost no red flare occurs.
このように本例によれば、メツシュ状電極（８）からの
反射光による赤のフレアをほぼ完全に防出することがで
きる。また本例によれば、透明導電膜（１１）はＩＴＯ
よりなるものであり、良導体であるので電子ビームのチ
ャージアップがな（、また２次電子放出も少ないので、
電子ビームの軌道に悪影響を及ぼす等の弊害もない。As described above, according to this example, red flare due to reflected light from the mesh electrode (8) can be almost completely prevented. Further, according to this example, the transparent conductive film (11) is made of ITO.
Since it is a good conductor, there is no charge-up of the electron beam (and there is little secondary electron emission, so
There is no adverse effect such as an adverse effect on the trajectory of the electron beam.
また本例によれば、金属膜（１０）及び透明導電膜（１
１）の膜厚は１０００人であり、接着力が強く、振動衝
撃で剥離することもなく、高信頼性のものとなる。また
本例によれば、クロム及びＩＴＯの蒸着は低温でできる
ため、メツシュ状電極（８）の張りに影ツを与えること
もなく、製作も容易である。Further, according to this example, the metal film (10) and the transparent conductive film (1
The film thickness of 1) is 1000 μm, has strong adhesive strength, does not peel off due to vibration and impact, and is highly reliable. Further, according to this example, since chromium and ITO can be vapor-deposited at a low temperature, the tension of the mesh-like electrode (8) is not affected, and manufacturing is easy.
なお、上述実施例においては、金属膜（１０）はクロム
よりなるものであるが、タングステン（Ｗ）、モリブデ
ン（Ｍｏ）等よりなるものであってもよい。In the above embodiment, the metal film (10) is made of chromium, but may be made of tungsten (W), molybdenum (Mo), or the like.
第３図一点鎖線Ｃ（ｎｌ、ｃ （ｋｌは、夫々タングス
テンの屈折率の実数部及び虚数部を示しており、同図二
点鎖線ｄ （ｎ）、ｄ ｆｋ）は、夫々モリブデンの屈
折率の実数部及び虚数部を示している。In Figure 3, the dashed-dotted lines C (nl, c (kl) represent the real and imaginary parts of the refractive index of tungsten, respectively, and the dashed-dotted lines d (n), d fk) in the figure represent the refractive index of molybdenum, respectively. shows the real and imaginary parts of.
また、上述実施例においては、透明導電膜（Ｌｌ）はＩ
ＴＯよりなるものであったが、ネサ（商品名）よりなる
ものであってもよい。ネサも屈折率ｎ＃２であり、ＩＴ
Ｏの場合と同様の作用効果を得ることができる。Further, in the above embodiment, the transparent conductive film (Ll) is I
Although it was made of TO, it may also be made of Nesa (trade name). Nesa also has a refractive index n#2, and IT
The same effects as in the case of O can be obtained.
また、上述実施例によれば、透明導電膜（１１）の厚さ
を７００人としたものであるが、上述（１）式を路溝た
す厚さとされてあれば、同様の作用効果を得ることがで
きることは明らかである。例えば、７００人×ｍ± ３
００人 （ｍ＝１．３．５．・・・・）程度とすればよ
い。In addition, according to the above embodiment, the thickness of the transparent conductive film (11) was set to 700, but if the thickness was set to the above-mentioned formula (1) plus the groove, the same effect could be obtained. It is clear that it can be obtained. For example, 700 people x m±3
00 people (m=1.3.5...).
また、上述実施例においては、赤色光の反射率を低下さ
せるものを示したが、例えば青色光あるいは緑色光を透
過する光電変換膜を有する撮像管においては、透明導電
膜の厚さの調整により、同様にして青色光あるいは緑色
光の反射率を低下させることもできる。Furthermore, in the above embodiments, the reflectance of red light was shown to be lowered, but for example, in an image pickup tube having a photoelectric conversion film that transmits blue light or green light, adjustment of the thickness of the transparent conductive film may be used. Similarly, the reflectance of blue light or green light can also be reduced.
以上述べた本発明によれば、メツシュ状電極上に干渉効
果を利用した反射防止膜を形成したので、メツシュ状電
極から光電変換膜への反射光を大幅に低下させることが
できるので、反射光によるフレアをほぼ完全に防止する
ことができる。また、反射防止膜は全て良導体で形成さ
れるので、この反射防止膜に電子ビームがチャージアッ
プすることもなく、電子ビームの軌道に悪影響を与える
こともない。According to the present invention described above, since an anti-reflection film using interference effect is formed on the mesh-like electrode, it is possible to significantly reduce the reflected light from the mesh-like electrode to the photoelectric conversion film. Flare caused by this can be almost completely prevented. Further, since the anti-reflection film is entirely formed of a good conductor, the electron beam will not be charged up on the anti-reflection film, and the trajectory of the electron beam will not be adversely affected.
第１図は本発明の一実施例を示す構成図、第２図〜第７
図はその説明のための図、第８図は撮像管の要部の構成
図、第９図及び第１０図はその説明のための図である。
（３）は光電変換膜、（８）はメツシュ状電極、（１ｏ
）は金ＢＩ！ｉＪ、（工１）は透明導電膜である。Figure 1 is a configuration diagram showing one embodiment of the present invention, Figures 2 to 7
The figure is a diagram for explaining the same, FIG. 8 is a configuration diagram of the main part of the image pickup tube, and FIGS. 9 and 10 are diagrams for explaining the same. (3) is a photoelectric conversion film, (8) is a mesh-like electrode, (1o
) is gold BI! iJ, (Process 1) is a transparent conductive film.
Claims (1)
電極に到達する撮像管において、 上記メッシュ状電極上に、金属膜及び透明導電膜がこの
順序で被着された上記使用波長帯域内の光の反射防止膜
が形成されることを特徴とする撮像管。[Claims] In an image pickup tube in which light within a used wavelength band passes through a photoelectric conversion film and reaches a mesh electrode, a metal film and a transparent conductive film are deposited in this order on the mesh electrode. An image pickup tube characterized in that an antireflection film for light within the above-mentioned usage wavelength band is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5821887A JPS63225463A (en) | 1987-03-13 | 1987-03-13 | Image pickup tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5821887A JPS63225463A (en) | 1987-03-13 | 1987-03-13 | Image pickup tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63225463A true JPS63225463A (en) | 1988-09-20 |
Family
ID=13077925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5821887A Pending JPS63225463A (en) | 1987-03-13 | 1987-03-13 | Image pickup tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63225463A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01186538A (en) * | 1988-01-14 | 1989-07-26 | Hitachi Ltd | Image pickup tube |
| US10564780B2 (en) | 2015-08-21 | 2020-02-18 | 3M Innovative Properties Company | Transparent conductors including metal traces and methods of making same |
-
1987
- 1987-03-13 JP JP5821887A patent/JPS63225463A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01186538A (en) * | 1988-01-14 | 1989-07-26 | Hitachi Ltd | Image pickup tube |
| US10564780B2 (en) | 2015-08-21 | 2020-02-18 | 3M Innovative Properties Company | Transparent conductors including metal traces and methods of making same |
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