JPS6322462B2 - - Google Patents

Info

Publication number
JPS6322462B2
JPS6322462B2 JP56088662A JP8866281A JPS6322462B2 JP S6322462 B2 JPS6322462 B2 JP S6322462B2 JP 56088662 A JP56088662 A JP 56088662A JP 8866281 A JP8866281 A JP 8866281A JP S6322462 B2 JPS6322462 B2 JP S6322462B2
Authority
JP
Japan
Prior art keywords
bonding pad
present
film
base ribbon
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56088662A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57202750A (en
Inventor
Mototaka Kamoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56088662A priority Critical patent/JPS57202750A/ja
Publication of JPS57202750A publication Critical patent/JPS57202750A/ja
Publication of JPS6322462B2 publication Critical patent/JPS6322462B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/90—
    • H10W70/60—
    • H10W72/015—
    • H10W72/01515—
    • H10W72/075—
    • H10W72/07551—
    • H10W72/50—
    • H10W72/536—
    • H10W72/59—
    • H10W72/923—
    • H10W72/952—
    • H10W72/983—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP56088662A 1981-06-09 1981-06-09 Semiconductor device and manufacture thereof Granted JPS57202750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56088662A JPS57202750A (en) 1981-06-09 1981-06-09 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56088662A JPS57202750A (en) 1981-06-09 1981-06-09 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57202750A JPS57202750A (en) 1982-12-11
JPS6322462B2 true JPS6322462B2 (OSRAM) 1988-05-12

Family

ID=13949026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56088662A Granted JPS57202750A (en) 1981-06-09 1981-06-09 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57202750A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184720A (ja) * 2000-12-15 2002-06-28 Murata Mfg Co Ltd デバイスの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5480679A (en) * 1977-12-09 1979-06-27 Nec Corp Manufacture for semiconductor device

Also Published As

Publication number Publication date
JPS57202750A (en) 1982-12-11

Similar Documents

Publication Publication Date Title
US3585461A (en) High reliability semiconductive devices and integrated circuits
EP0684643B1 (en) Method of manufacturing semiconductor devices in an active layer on an support substrate
US4227944A (en) Methods of making composite conductive structures in integrated circuits
US4263058A (en) Composite conductive structures in integrated circuits and method of making same
US6746912B2 (en) MIM capacitor and manufacturing method therefor
US4015175A (en) Discrete, fixed-value capacitor
US3241931A (en) Semiconductor devices
US3725743A (en) Multilayer wiring structure
US3939047A (en) Method for fabricating electrode structure for a semiconductor device having a shallow junction
US3686748A (en) Method and apparatus for providng thermal contact and electrical isolation of integrated circuits
US3460003A (en) Metallized semiconductor device with fired-on glaze consisting of 25-35% pbo,10-15% b2o3,5-10% al2o3,and the balance sio2
US3698941A (en) Method of applying contacts to a semiconductor body
US3672984A (en) Method of forming the electrode of a semiconductor device
US3848260A (en) Electrode structure for a semiconductor device having a shallow junction and method for fabricating same
US4310569A (en) Method of adhesion of passivation layer to gold metalization regions in a semiconductor device
US4897707A (en) Semiconductor device comprising a capacitor and a buried passivation layer
US3735482A (en) Method of making an mos transistor including a gate insulator layer of aluminum oxide and the article so produced
JPS6322462B2 (OSRAM)
US5908316A (en) Method of passivating a semiconductor substrate
US3551196A (en) Electrical contact terminations for semiconductors and method of making the same
US3714521A (en) Semiconductor device or monolithic integrated circuit with tungsten interconnections
US3840982A (en) Contacts for semiconductor devices, particularly integrated circuits, and methods of making the same
US12489017B2 (en) Method of manufacturing a semiconductor package, die, and die package
JPS628034B2 (OSRAM)
JPH0757904A (ja) ダイヤモンド半導体装置