JPS63223788A - Drive ic for active matrix display device - Google Patents
Drive ic for active matrix display deviceInfo
- Publication number
- JPS63223788A JPS63223788A JP5803487A JP5803487A JPS63223788A JP S63223788 A JPS63223788 A JP S63223788A JP 5803487 A JP5803487 A JP 5803487A JP 5803487 A JP5803487 A JP 5803487A JP S63223788 A JPS63223788 A JP S63223788A
- Authority
- JP
- Japan
- Prior art keywords
- driving
- display device
- polycrystalline
- film
- drive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 title claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000005224 laser annealing Methods 0.000 description 7
- 238000001953 recrystallisation Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＬＣ，ＥＬ、ＶＦ等の表示装置をアクティブ
−＝ｒトｖックス方式で駆動するための駆動ＩＣに関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a drive IC for driving display devices such as LC, EL, VF, etc. in an active-=r-tox mode.
近年、ＬＣ，ＥＬ等の表示装置が大面積化するのに伴り
て駆動回路をアクティブマトリックスＴＰＴで駆動し、
高画質の表示を実現しようという方式が検討され始めて
いる。この方式では表示装置の各セルに対応して薄膜ト
ランジスタ（、以下、ＴＰＴと称す）を設けるが、この
ＴＦＴｔ−Ｘ−Ｙマトリックスで選択するためにはＸ、
Ｙの各電極線を駆動するためのドライバが必要である。In recent years, as display devices such as LC and EL have become larger in area, the drive circuit is driven by an active matrix TPT,
Studies have begun to consider methods to achieve high-quality display. In this method, a thin film transistor (hereinafter referred to as TPT) is provided corresponding to each cell of the display device, but in order to select in this TFTt-X-Y matrix,
A driver is required to drive each Y electrode line.
最近、このドライバをＴＰＴと共にガラスや石英等の基
板上ＫＩＣ化する動きも見られる。Recently, there has been a movement to use this driver together with TPT as a KIC on a substrate such as glass or quartz.
しかし、従来検討されているＩＣはガラス等の基板上に
設けた多結晶ａｉｍをＴＰＴ及びドライ、＜（ＴＰＴを
駆動する回路）を構成するトランジスタの活性層として
共用することによシ構成されている。一方、パネルが大
容量になると、データドライバとして高速性能（高移動
度）が要求されるようになるため、多結晶８ｉ膜の質を
レーザアニール等の手法で単結晶に近いレベルまで向上
させる必要が生じる。しかし、現状ではこのような良質
な膜を結晶性のばらつきを小さく抑え且つ大面積にわた
って作ることは＃１とんど困難である。However, conventionally considered ICs are constructed by using a polycrystalline AIM provided on a substrate such as glass as the active layer of the transistor that constitutes the TPT and the dry transistor (the circuit that drives the TPT). There is. On the other hand, as panels increase in capacity, high-speed performance (high mobility) is required as a data driver, so it is necessary to improve the quality of the polycrystalline 8i film to a level close to that of single crystal using methods such as laser annealing. occurs. However, at present, it is extremely difficult to produce such a high-quality film over a large area while minimizing variations in crystallinity.
仮に作成し得九としても、異なるサイズのグレインが広
い面内に形成され（結晶粒界の数が場所によシ大きく異
なる多結晶Ｓｉ膜が形成される）、キャリア移動度のは
らつきやリーク電流のＩ３″う２Ｓの大きいＴＰＴが形
成されるようになる。特に、スイッチングトランジスタ
を形成するＴＰＴの特性としてリーク電流の）ずう７ｓ
が大きいことは、表示素子（ＬＣ等）に印加される実効
電圧のはらつきをもたらすもので、コントラストが場所
によシ大きく違ってみえたシ或いはオフセット電圧のば
らつきによシ画素の劣化特性にばらつきを生じたシする
。従って、駆動ＩＣの歩留シは大幅に低下し、現実に使
えるＩＣを得ることがほとんど不可能になる。Even if it could be made, grains of different sizes would be formed in a wide plane (a polycrystalline Si film would be formed in which the number of grain boundaries varies greatly depending on the location), resulting in variations in carrier mobility and leakage. A TPT with a large current I3'' and 2S is formed.In particular, a characteristic of a TPT forming a switching transistor is that the leakage current is 7s).
A large value causes fluctuations in the effective voltage applied to the display element (LC, etc.), causing the contrast to appear to vary greatly from place to place, or to the deterioration characteristics of pixels due to variations in offset voltage. If there is any variation. Therefore, the yield of drive ICs is significantly reduced, making it almost impossible to obtain ICs that can actually be used.
本発明の目的はかかＡ従来の欠点を除去し、高性能且つ
大容量表示素子を駆動可能にしたアクティブマ） ＩＪ
ックス表示装置の駆動ＩＣを提供することにある。The purpose of the present invention is to eliminate the drawbacks of the conventional active material (IJ) and to make it possible to drive high-performance and large-capacity display elements.
An object of the present invention is to provide a driving IC for a box display device.
本発明はガラス基板上に一体化形され、 Ｘ−Ｙマトリ
ックス状に配列されたアクティブマトリックス表示装置
の駆動ＩＣにおいて、各表示セルに対応して薄膜トラン
ジスタ及びこの薄膜トランジスタを駆動するための走査
側ドライバをアモルファス８ｉ活性層上に形成し、且つ
前記薄膜トランジスタを駆動するためのデータ側ドライ
バ及びサンプルホールド回路を多結晶Ｓｉ活性層上に形
成するように構成される。The present invention provides a driving IC for an active matrix display device integrated on a glass substrate and arranged in an X-Y matrix, in which a thin film transistor and a scanning side driver for driving the thin film transistor are provided corresponding to each display cell. It is formed on the amorphous 8i active layer, and the data side driver and sample hold circuit for driving the thin film transistor are formed on the polycrystalline Si active layer.
本発明では第一に高速のスイッチングスピードが要求さ
れるデータ側ドライバ及びサンプルホールド回路を多結
晶Ｓｉ活性層上に形成する。また第二に、１００ｋＨｚ
以下の低速で動作すれはよいスイッチング用ＴＰＴや走
査側ドライバをアモルファスＳｉ活性層上に形成する。In the present invention, first, a data-side driver and a sample-and-hold circuit, which require high switching speed, are formed on a polycrystalline Si active layer. Second, 100kHz
A switching TPT and a scanning side driver that can operate at the following low speeds are formed on the amorphous Si active layer.
かかる構成によシ、移動度の大きな多結晶Ｓｉは線状に
細長く形成されればよいのでその占有面積は小さくなる
。With such a configuration, the polycrystalline Si having high mobility can be formed into a long and thin linear shape, so that the area occupied by the polycrystalline Si can be reduced.
従って、例えばＡｒレーザアニールやエキシマレーザア
ニール等で再結晶化を行って良質の結晶性の膜を線状領
域全体にわたって比較的均一性良く（グレインサイズの
ばらつきも少く）形成することができる。これは膜形成
領域が小さいため、再結晶前の多結晶Ｓｉあるいはアそ
ルファス８４膜に入る欠陥やボイドの発生率が小さいた
めである。Therefore, by performing recrystallization using, for example, Ar laser annealing or excimer laser annealing, a high-quality crystalline film can be formed with relatively good uniformity (with little variation in grain size) over the entire linear region. This is because the film formation area is small, so the incidence of defects and voids in the polycrystalline Si or amorphous 84 film before recrystallization is small.
このように均一な高品質膜が得られれは、トランジスタ
の特性（移動度やリーク電流）はらつきも少く、高速の
データドライドを歩留夛よ〈得ることができる。また、
一方のＴ Ｆ ’ｌ’や走査側ドライバは大面積化に適
したアモルファスＳｉで構成されるので、低リーク電流
、高歩留りの特性を保持することができる。即ち、駆動
ＩＣ全体としても高歩留シなＩＣが実現されるようにな
る。また、レーザアニール等を用い、従来よりも良好な
膜質の多結晶８ｉ膜をデータドライバに用いることがで
きるので表示素子の大容量、大面積化が可能になる。When a uniform high-quality film is obtained in this way, there is less variation in transistor characteristics (mobility and leakage current), and high-speed data drives can be obtained with high yield. Also,
On the other hand, T F 'l' and the scanning side driver are made of amorphous Si, which is suitable for increasing the area, so that characteristics of low leakage current and high yield can be maintained. In other words, a high-yield IC can be realized for the entire drive IC. Furthermore, by using laser annealing or the like, a polycrystalline 8i film with better film quality than before can be used for the data driver, making it possible to increase the capacity and area of the display element.
以下１本発明の実施例について１図面を参照して詳細に
説明する。Hereinafter, one embodiment of the present invention will be described in detail with reference to one drawing.
第１図は本発明の一実施例を説明するためのアクティブ
マトリックス表示装置の駆動ＩＣの回路構成図である。FIG. 1 is a circuit diagram of a driving IC for an active matrix display device for explaining one embodiment of the present invention.
第２図は第１図における駆動ＩＣの断面図である。ここ
では、−例として液晶（ＬＣ）を駆動するための駆動Ｉ
Ｃについて説明するが、他の表示装置（ＥＬＤ、ＶＦＤ
等）を駆動するための駆動ＩＣに対しても適用されるこ
とは言うまでもない。FIG. 2 is a sectional view of the drive IC in FIG. 1. Here, as an example, a driving I for driving a liquid crystal (LC) is described.
C will be explained, but other display devices (ELD, VFD
Needless to say, the present invention is also applied to a drive IC for driving a device (such as the above).
第１図に示すように、本実施例では高速ドライバ配置領
域１１にはデータ側ドライバ１３およびサンプルホール
ド回路１４が形成され、低速ドライバ配置領域１２には
走査側ドライバ１５と各セルを構成する薄膜トランジス
タ１６が形成される。As shown in FIG. 1, in this embodiment, a data-side driver 13 and a sample-hold circuit 14 are formed in the high-speed driver arrangement area 11, and a scan-side driver 15 and thin film transistors constituting each cell are formed in the low-speed driver arrangement area 12. 16 is formed.
次に１第２図に示すように、この各セル毎に形成された
薄膜トランジスタ（ＴＰＴ）１６およびこの１゛ＦＴ１
６を線順次に選択してＬＣセルの片側電極にビデオ信号
を供給するための走査側ドライバ１５を、ガラス基板２
１上に絶縁膜２２を介して形成され水素処理を処したア
モルファス８ｉ （ａ−８ｉ）活性層２４上に形成する
。′即ち、ガラス基板２１上の低速ドライバ配置領域１
２のトランジスタ活性層は全てａ−８１で構成される。Next, as shown in FIG. 1, a thin film transistor (TPT) 16 formed for each cell and a
6 line-sequentially to supply a video signal to one side electrode of the LC cell.
The amorphous 8i (a-8i) active layer 24 is formed on the active layer 24 with an insulating film 22 interposed therebetween and subjected to hydrogen treatment. 'That is, the low-speed driver arrangement area 1 on the glass substrate 21
All transistor active layers of No. 2 are composed of a-81.
しかるに、ＴＰＴ １６及び走査側ドライバ１５は通常
十数μｓｅｃのパルス期間内でスイッチングを行えばよ
いから、ａ−８ｉの移動度（０，１〜１ｃｄ／ ｖ−Ｓ
ｅｃ ）でも十分対応が可能である。従って、上記の如
き構成で、動作速度に問題が生じる恐れは少い。However, since the TPT 16 and the scanning side driver 15 normally only need to switch within a pulse period of ten or more μsec, the mobility of a-8i (0.1 to 1 cd/v-S
ec) can also be used. Therefore, with the above configuration, there is little possibility that problems will occur in the operating speed.
また、第１図におけるデータ側ドライバ１３やサンプル
ホールド回路１４は第２図に示す多結晶Ｓぜ活性層２３
上に形成される。即ち、ガラス基板２１上の高速ドライ
バ配置領域１１内のトランジスタ活性層は全て多結晶８
ｉで構成される。このようにすると、多結晶８ｉ活性層
２３は、はソ線状に細長く形成されればよくなるので、
ＩＣ全体の中に占める面積が従来よりも大幅に小さくて
済む。しかも横に長い帯状のパターンになるのでレーザ
アニール（Ａｒｃｗレーザアニールやエキシマレーザア
ニール等）等の再結晶化技術を用いることができ結晶性
の良好な高品質膜が得られる。この場合、再結晶化を行
う際の走査回数は数回程度で済むので再結晶化に要する
時間、即ちスループットは短くなる。さらに、膜の形成
される領域が小さいため再結晶化前の膜（多結晶Ｓｉあ
るいはａ−８１）に存在する欠陥、ボイド、クラック等
の発生率がチップ全体に比較してはるかに小さい。Furthermore, the data side driver 13 and sample hold circuit 14 in FIG.
formed on top. That is, the transistor active layer in the high-speed driver arrangement region 11 on the glass substrate 21 is entirely made of polycrystalline 8
Consists of i. In this way, the polycrystalline 8i active layer 23 only needs to be formed into a long and thin shape.
The area occupied in the entire IC can be significantly smaller than the conventional one. Moreover, since the pattern is a horizontally long strip, a recrystallization technique such as laser annealing (Arcw laser annealing, excimer laser annealing, etc.) can be used, and a high quality film with good crystallinity can be obtained. In this case, since the number of scans required for recrystallization is only a few times, the time required for recrystallization, that is, the throughput is shortened. Furthermore, since the region where the film is formed is small, the incidence of defects, voids, cracks, etc. that exist in the film (polycrystalline Si or A-81) before recrystallization is much smaller than in the entire chip.
このため結晶性の良い高品質膜であシながら、全体にわ
たって比較的グレインサイズのはらつきの小さい且つ均
一性の優れた膜が得られる。このように均一で高品質の
膜が得られるので移動度やリーク電流等の特性ばらつき
の小さい高移動度トランジスタが実現される。従って、
高速動作の必要なデータドライバ１３やサンプルホール
ド回路１４が容易に実現でき、従来技術では不可能とみ
なされていた表示装置の大容量化且つ大面積化も可能で
ある。Therefore, a high-quality film with good crystallinity can be obtained, and a film with relatively small variation in grain size and excellent uniformity can be obtained over the entire film. Since a uniform and high-quality film can be obtained in this way, a high-mobility transistor with small variations in characteristics such as mobility and leakage current can be realized. Therefore,
The data driver 13 and sample-and-hold circuit 14 that require high-speed operation can be easily realized, and it is also possible to increase the capacity and area of the display device, which was considered impossible with the prior art.
また、他方のＴＦＴ部１６及び走査側ドライバ部１５に
はａ−８ｉを用いるのでリーク電流が小さくできるとと
もに、大容量且つ大面積のＬＣ表示装置を駆動するのに
適したＩＣを構成することができる。このようにＴＦＴ
１６をａ−８１で構成すると、リーク電流のばらつき
も小さく抑えられるのでＬＣに印加される実効電圧のば
らつきも少くでき、コントラストやオフセット電圧のは
らつきに伴う画素劣化のばらつきも少く抑えられる。即
ち、大容量表示装置対応の駆動ＩＣ全体としての歩留シ
は従来の構成に比べ大幅に向上する。In addition, since A-8i is used for the other TFT section 16 and the scanning side driver section 15, leakage current can be reduced, and an IC suitable for driving a large-capacity, large-area LC display device can be constructed. can. In this way, TFT
When 16 is made of a-81, variations in leakage current can be suppressed to a small level, so variations in the effective voltage applied to the LC can also be reduced, and variations in pixel deterioration due to variations in contrast and offset voltage can also be suppressed. In other words, the overall yield of the drive IC compatible with large-capacity display devices is significantly improved compared to the conventional configuration.
次に、上述した駆動用ＩＣの製造について説明する。Next, manufacturing of the above-mentioned driving IC will be explained.
第２図に示すように、ガラス基板２１上に絶縁膜２２
（８１０２等）を介して多結晶８ｉ腰２３を低圧ＣＶＤ
法等を用いて形成する。ま九、前記５ｉ０２の如き絶縁
膜２２もかかる低圧ＣＶＤ法や常圧ＣＶＤ法等の手法を
用いて形成する。次に、この多結晶Ｓｉ膜２３をＡｒレ
ーザやエキシマレーザ等を用いてアニール処理する。そ
して、この多結晶Ｓｉ＠２ｓに、例えばイオン注入技術
を用いてＰ 、Ａ、等の不純物をソース・ドレイン領域
２３′。As shown in FIG. 2, an insulating film 22 is formed on a glass substrate 21.
Low pressure CVD of polycrystalline 8i waist 23 via (8102 etc.)
Formed using methods such as methods. Ninth, the insulating film 22 as shown in 5i02 is also formed using the low pressure CVD method, normal pressure CVD method, or the like. Next, this polycrystalline Si film 23 is annealed using an Ar laser, an excimer laser, or the like. Then, impurities such as P and A are added to the source/drain regions 23' using, for example, ion implantation technology into this polycrystalline Si@2s.
２３＃に導入し、適当なアニール処理を行りてソース２
３′、ドレイン２３′を形成する。次に１ この上に、
８ｉ０．のようなゲート絶縁膜２５をＣＶＤ法等で形成
した後、例えばＰドープを施した多結晶Ｓ１からなるデ
ート電極２６を設ける。23#, perform appropriate annealing treatment, and prepare source 2.
3', forming a drain 23'. Next 1 On top of this,
8i0. After forming the gate insulating film 25 by CVD or the like, a date electrode 26 made of, for example, P-doped polycrystal S1 is provided.
上記の如きプロセスは比較的高温（４００〜６５０°Ｃ
程度）の熱処理を経るが、ａ−８Ｈ領域は低温（〜３０
０°Ｃ以下）で形成される。Processes such as those described above are carried out at relatively high temperatures (400-650°C).
The a-8H region undergoes heat treatment at a low temperature (~30°C).
(below 0°C).
まづ、絶縁膜２２上に、グロー放電法等を用いてａ−８
ｉ膜２４を形成し、その上部からイオン注入等によシソ
ース、ドレイン領域２４’、 ２４’ＫＰ又はＡｓの不
純物を導入する。その上に、蒸着法やスパッタ法等を用
いて、 ８ｉ０．あるいは８ ｉＮｘ等のゲート絶縁
膜２５′を付着する。更に％金属（ＡＩ、Ａｕ、Ｃｒ９
Ｍ０．ｖ等）の導電層２７（ゲート電極）および２８（
配線）を蒸着法等を用−て形成する。この際、この導電
層２７，２８ａ多結晶Ｓｉのソース、ドレイン領域２３
’、２３’及びａ −８ｉ。First, a-8 is formed on the insulating film 22 using a glow discharge method or the like.
An i-film 24 is formed, and impurities such as source and drain regions 24', 24'KP or As are introduced from the top thereof by ion implantation or the like. On top of that, 8i0. Alternatively, a gate insulating film 25' of 8 iNx or the like is deposited. Furthermore, % metal (AI, Au, Cr9
M0. conductive layers 27 (gate electrode) and 28 (
(wiring) is formed using a vapor deposition method or the like. At this time, the source and drain regions 23 of the conductive layers 27 and 28a of polycrystalline Si
', 23' and a-8i.
ソース、ドレイン領域２４’、２４’と電気的接触がと
られる。Electrical contact is made with the source and drain regions 24', 24'.
このように、はとんど通常の多結晶Ｓ１やａ −８ｉを
形成する技術を用いて駆動ＩＣを製造することが可能で
あり、多結晶Ｓｉの７ニールエ程を除いては特殊なプロ
セスを要することなく容易に製造することができる。尚
、多結晶８ｉのアニールも条件が決まれば、スループッ
トが短いのでプロセスを長くするととはほとんどない。In this way, it is possible to manufacture drive ICs using the usual techniques for forming polycrystalline S1 and a-8i, and no special processes are required except for the 7-neel etching process for polycrystalline Si. It can be easily manufactured without any need. Note that once the conditions for annealing polycrystalline 8i are determined, the throughput is short, so there is little need to lengthen the process.
以上説明したように、本発明によれば高性能なデータド
ライバと低リーク電流のＴＰＴ 、走査側ドライバとが
高歩留シで得られるので、大面積且つ大容量の表示装置
を実現することが容易になる。As explained above, according to the present invention, a high-performance data driver, a TPT with low leakage current, and a scanning side driver can be obtained with high yield, making it possible to realize a large-area, large-capacity display device. becomes easier.
特に、移動度やリーク電流等の特性上のばらつきを小さ
く抑えられるので、表示素子の画質が向上するだけでな
く、画素の劣化のばらつきも少くしたアクティブマトリ
ックス表示装置の駆動ＩＣを得られる効果がある。In particular, variations in characteristics such as mobility and leakage current can be suppressed to a minimum, which not only improves the image quality of display elements, but also provides a drive IC for active matrix display devices that reduces variations in pixel deterioration. be.
第１図は本発明の一実施例を説明するためのアクティブ
マトリックス表示装置の駆動ＩＣの回路構成図、第２図
は第１図における駆動ＩＣの断面図である。FIG. 1 is a circuit configuration diagram of a driving IC of an active matrix display device for explaining one embodiment of the present invention, and FIG. 2 is a sectional view of the driving IC in FIG. 1.
Claims (1)
に配列されたアクティブマトリックス表示装置の駆動Ｉ
Ｃにおいて、各表示セルに対応して薄膜トランジスタ及
びこの薄膜トランジスタを駆動するための走査側ドライ
バをアモルファスＳｉ活性層上に形成し、且つ前記薄膜
トランジスタを駆動するためのデータ側ドライバ及びサ
ンプルホールド回路を多結晶Ｓｉ活性層上に形成したこ
とを特徴とするアクティブマトリックス表示装置の駆動
ＩＣ。Driving I of an active matrix display device integrally formed on a glass substrate and arranged in an X-Y matrix
In C, a thin film transistor and a scanning side driver for driving the thin film transistor are formed on an amorphous Si active layer corresponding to each display cell, and a data side driver and a sample hold circuit for driving the thin film transistor are formed of polycrystalline silicon. A driving IC for an active matrix display device, characterized in that it is formed on a Si active layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62058034A JPH0752329B2 (en) | 1987-03-13 | 1987-03-13 | Driver IC for active matrix display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62058034A JPH0752329B2 (en) | 1987-03-13 | 1987-03-13 | Driver IC for active matrix display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63223788A true JPS63223788A (en) | 1988-09-19 |
| JPH0752329B2 JPH0752329B2 (en) | 1995-06-05 |
Family
ID=13072654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62058034A Expired - Lifetime JPH0752329B2 (en) | 1987-03-13 | 1987-03-13 | Driver IC for active matrix display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0752329B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0527713A (en) * | 1991-07-25 | 1993-02-05 | Casio Comput Co Ltd | Display driving device and display device |
| JPH0527712A (en) * | 1991-07-25 | 1993-02-05 | Casio Comput Co Ltd | Display driving device and display device |
| JPH05100633A (en) * | 1991-10-04 | 1993-04-23 | Casio Comput Co Ltd | Liquid crystal driving circuit and liquid crystal display device |
| US5247375A (en) * | 1990-03-09 | 1993-09-21 | Hitachi, Ltd. | Display device, manufacturing method thereof and display panel |
| JPH07135324A (en) * | 1993-11-05 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | Thin film semiconductor integrated circuit |
| WO1998048318A1 (en) * | 1997-04-22 | 1998-10-29 | Matsushita Electric Industrial Co., Ltd. | Drive circuit for active matrix liquid crystal display |
| US6218678B1 (en) | 1993-11-05 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6849482B2 (en) | 1999-02-12 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of forming the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS584180A (en) * | 1981-06-30 | 1983-01-11 | セイコーエプソン株式会社 | Active matrix substrate |
-
1987
- 1987-03-13 JP JP62058034A patent/JPH0752329B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS584180A (en) * | 1981-06-30 | 1983-01-11 | セイコーエプソン株式会社 | Active matrix substrate |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247375A (en) * | 1990-03-09 | 1993-09-21 | Hitachi, Ltd. | Display device, manufacturing method thereof and display panel |
| JP2776073B2 (en) * | 1991-07-25 | 1998-07-16 | カシオ計算機株式会社 | Display drive device and display device |
| JPH0527712A (en) * | 1991-07-25 | 1993-02-05 | Casio Comput Co Ltd | Display driving device and display device |
| JPH0527713A (en) * | 1991-07-25 | 1993-02-05 | Casio Comput Co Ltd | Display driving device and display device |
| JPH05100633A (en) * | 1991-10-04 | 1993-04-23 | Casio Comput Co Ltd | Liquid crystal driving circuit and liquid crystal display device |
| US6475839B2 (en) | 1993-11-05 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing of TFT device by backside laser irradiation |
| US6218678B1 (en) | 1993-11-05 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JPH07135324A (en) * | 1993-11-05 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | Thin film semiconductor integrated circuit |
| US6617612B2 (en) * | 1993-11-05 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a semiconductor integrated circuit |
| WO1998048318A1 (en) * | 1997-04-22 | 1998-10-29 | Matsushita Electric Industrial Co., Ltd. | Drive circuit for active matrix liquid crystal display |
| US6411273B1 (en) | 1997-04-22 | 2002-06-25 | Matsushita Electric Industrial Co., Ltd. | Drive circuit for active matrix liquid crystal display |
| US6849482B2 (en) | 1999-02-12 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of forming the same |
| US9097953B2 (en) | 1999-02-12 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0752329B2 (en) | 1995-06-05 |
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