JPS63222487A - Manufacture of semiconductor light emitting device - Google Patents
Manufacture of semiconductor light emitting deviceInfo
- Publication number
- JPS63222487A JPS63222487A JP62056035A JP5603587A JPS63222487A JP S63222487 A JPS63222487 A JP S63222487A JP 62056035 A JP62056035 A JP 62056035A JP 5603587 A JP5603587 A JP 5603587A JP S63222487 A JPS63222487 A JP S63222487A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- temperature
- inp
- active layer
- dfb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 238000005253 cladding Methods 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000010276 construction Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Abstract
Description
【発明の詳細な説明】
〔概要〕
非対称反射鏡型の叶Ｂレーザ（分布帰還型レーザ）では
、利得ピーク波長λ１とＤＦＢモード波長λＤＦＩＩを
一致させることにより、単一波長発振を得ているが１周
囲温度を広い範囲にわたって変化させるとλ、とλＤＦ
ＩＩの差が太き（なってＦＰ（Ｆａｂｒｙ−Ｐｅｒｏ
Ｌ）モード発振が起こってしまうことがある。この不都
合を抑制するために５本発明者の実験結果より△λ＝λ
ＥＬ−λＤＦＩを温度２０℃で負の値になるように回折
格子の周期を調節して発光装置を形成するようにする方
法を提起する。[Detailed Description of the Invention] [Summary] In the asymmetric reflecting mirror type Kano B laser (distributed feedback laser), single wavelength oscillation is obtained by matching the gain peak wavelength λ1 and the DFB mode wavelength λDFII. 1 When the ambient temperature is varied over a wide range, λ and λDF
The difference between II and FP (Fabry-Pero
L) Mode oscillation may occur. In order to suppress this inconvenience, based on the experimental results of the inventor, △λ=λ
A method is proposed in which a light emitting device is formed by adjusting the period of a diffraction grating so that EL-λDFI becomes a negative value at a temperature of 20°C.
本発明はＤＦＢレーザについて、広い温度範囲で単一波
長発振を得るための方法に関する。The present invention relates to a method for obtaining single wavelength oscillation over a wide temperature range for a DFB laser.
ＤＦＢレーザは単一波長発振が得られやすいために、光
通信システムの光源として広く用いられている。DFB lasers are widely used as light sources for optical communication systems because they easily produce single wavelength oscillation.
第３図（１）、 （２）はＤＦＢレーザの断面図と側断
面図である。FIGS. 3(1) and 3(2) are a cross-sectional view and a side cross-sectional view of the DFB laser.
図には、波長が１．３μｍ帯のＰＢＨ（Ｆｌａｔ ５ｕ
ｒｆａｃｅＢｕｒｉｅｄ ５ｔｒｕｃｔｕｒｅ）−ＤＦ
Ｂが示される。The figure shows PBH (Flat 5u
rfaceBuried 5structure)-DF
B is shown.
以下にこのレーザの構造を製造工程順に説明する。The structure of this laser will be explained below in the order of manufacturing steps.
図において、ｎ型インジウム￥Ａ（ｎ−１ｎＰ）基板１
上に、ガイド層としてｎ型インジウムガリウム砒素Ｗ（
ｎ−１ｎＧａＡｓＰ）層２．活性層としてアンドープの
ＩｎＧａＡｓＰ ｉ ３ 、クラッド層としてｐ型イン
ジウム燐（ｐ−ＩｎＰ）層４を成長する。In the figure, an n-type indium\A (n-1nP) substrate 1
On top, n-type indium gallium arsenide W (
n-1nGaAsP) layer 2. Undoped InGaAsP i 3 is grown as an active layer, and a p-type indium phosphide (p-InP) layer 4 is grown as a cladding layer.
この際、 ｎ−１ｎＰ基板１は下側のクラッド層を兼用
し、成長に先立ってこれとｎ−ＩｎＧａＡｓＰ ’ｆｆ
ｊ ２との間に回折格子を形成する。At this time, the n-1nP substrate 1 also serves as the lower cladding layer, and prior to growth, the n-InGaAsP 'ff
A diffraction grating is formed between the two.
つぎに１通常のりソグラフィを用いて基板をエツチング
してメサストライプを形成し、エツチングマスクをその
まま成長マスクに使用して、メサストライプ側面に埋込
層としてｐ−１ｎＰ層５゜ｎＪｎＰ層６を成長する。Next, the substrate is etched using normal lamination lithography to form a mesa stripe, and using the etching mask as a growth mask, a p-1nP layer 5°nJnP layer 6 is grown as a buried layer on the side surface of the mesa stripe. do.
つぎに、成長マスクを除去して基板全面にｐ−１ｎＰ層
７．コンタクト層としてｐ−１ｎＧａＡｓＰ層８を成長
し、メサストライプ上のｐ−１ｎＧａＡｓＰ ＷＪ ８
をストライプ状に残し、この上にストライプ状に開口さ
れた二酸化珪素（ＳｉＯ□）ＪＥＪ９を介して、ｐ側電
極としてチタン／白金／金（Ｔｉ／Ｐｔ／Ａｕ）層１０
゜ｎ−ＩｎＰ基板１の裏面にｎ側電極として金／金ゲル
マニウム（Ａｕ／ＡｕＧｅ）層１１を形成する。Next, the growth mask is removed and a p-1nP layer 7. A p-1nGaAsP layer 8 is grown as a contact layer, and a p-1nGaAsP WJ 8 is grown on the mesa stripe.
is left in the form of a stripe, and a titanium/platinum/gold (Ti/Pt/Au) layer 10 is formed as a p-side electrode via a silicon dioxide (SiO□) JEJ9 having an opening in the form of a stripe.
A gold/gold germanium (Au/AuGe) layer 11 is formed on the back surface of the n-InP substrate 1 as an n-side electrode.
レーザの層構造は以上のように形成され、非対称反射鏡
型の構造は２例えば活性層の片方の端面ばへき開（反射
率３１％）のまま、他方の端面ば低反射膜（反射率５％
）１２を被着して形成する。The layer structure of the laser is formed as described above, and the asymmetric reflector type structure has two, for example, one end face of the active layer is left cleaved (reflectance 31%) and the other end face is coated with a low reflection film (reflectance 5%).
) 12 is deposited and formed.
ＤＦＢレーザにおいて単一波長を得るために。 To obtain a single wavelength in a DFB laser.
Δλ−λ、−λＤＦＩＩを常温（〜温度２０℃）で０に
なるように回折格子の周期を調節しているが、広い温度
範囲にわたってΔλ＝０を維持することは困難であった
。Although the period of the diffraction grating is adjusted so that Δλ−λ and −λDFII become 0 at room temperature (up to a temperature of 20° C.), it has been difficult to maintain Δλ=0 over a wide temperature range.
上記問題点の解決は、活性層のバンドギャップより決ま
る利得ピーク波長λ。と、活性層と活性層を挾むクラッ
ド層との屈折率と回折格子のピッチより決まるＤＦＢモ
ード波長λｔｌＦ１１との差Δλ＝λ。−λＤ□を温度
２０’Ｃで負の値になるように、活性層、クラッド層９
回折格子構造を設定して形成する半導体発光装置の製造
方法により達成される。The solution to the above problem is the gain peak wavelength λ determined by the bandgap of the active layer. and the difference Δλ=λ between the refractive index of the active layer and the cladding layer sandwiching the active layer and the DFB mode wavelength λtlF11 determined by the pitch of the diffraction grating. -λD□ has a negative value at a temperature of 20'C, the active layer and cladding layer 9
This is achieved by a method of manufacturing a semiconductor light emitting device in which a diffraction grating structure is set and formed.
１．３μｍ帯系のＤＦＢレーザにおいて、前記△λが温
度２０℃で
一１５ｎｍ≦△λ≦−５ｎｍ
にあればよい。In the 1.3 μm band DFB laser, the Δλ may be -15 nm≦△λ≦−5 nm at a temperature of 20°C.
本発明はΔλの異なる種々のレーザを作製し。 In the present invention, various lasers with different Δλs are manufactured.
各Δλの温度依存と発振モードを測定した結果。Results of measuring the temperature dependence and oscillation mode of each Δλ.
Δλを温度２０℃で負の値に設定すると広い温度範囲で
ＤＦＢモードの発振が得られるという実験結果を利用し
たものである。This is based on the experimental result that when Δλ is set to a negative value at a temperature of 20° C., DFB mode oscillation can be obtained over a wide temperature range.
第１図は本発明を説明する実験データで、 ＤＦＢレー
ザの温度依存と発振モードを示す図である。FIG. 1 shows experimental data for explaining the present invention, and is a diagram showing the temperature dependence and oscillation mode of a DFB laser.
図は１．３μｍ帯系のＤＦ［ｌレーザの測定結果で。The figure shows the measurement results of a 1.3 μm band DF[l laser.
黒丸はＦＰモード、白丸はＤＩ”Ｂモードを示す。The black circles indicate the FP mode, and the white circles indicate the DI''B mode.
図より、温度２０℃で、−１５ｎｍ≦△λ≦−５ｎｍで
あれば５〜１００℃でＤＦＢモード発振が得られること
が分かる。From the figure, it can be seen that at a temperature of 20°C, DFB mode oscillation can be obtained at 5 to 100°C if -15nm≦△λ≦-5nm.
第２図は利得ピーク波長λ、と叶Ｂモード波長λ。２．
の温度依存を示す図である。Figure 2 shows the gain peak wavelength λ and the B mode wavelength λ. 2.
FIG. 2 is a diagram showing the temperature dependence of
図より分かるように、λ。は０．３ｎｍ／’Ｃ。As can be seen from the figure, λ. is 0.3nm/'C.
λｔａｒｓは０．１ｎｍ／”Ｃの温度依存をもつため、
常温においてΔλ−０に調節すると高温において△λが
大きい正の値をもつようになる。従って図のように常温
でΔλを負の値に設定すれば９周囲温度の変化にともな
うΔλの絶対値を広い温度範囲で小さく抑えることがで
きる。Since λtars has a temperature dependence of 0.1 nm/”C,
When adjusted to Δλ-0 at room temperature, Δλ has a large positive value at high temperatures. Therefore, if Δλ is set to a negative value at room temperature as shown in the figure, the absolute value of Δλ due to changes in ambient temperature can be suppressed to a small value over a wide temperature range.
活性層のバンドギャップの温度依存により利得ピーク波
長λ１が周囲温度の上昇とともに叶Ｂモード波長λＤＦ
ＩＩ以上に長波長側に大きくずれるためにΔλは大きく
なり１本発明はこのずれを常温において前もって補正す
るものである。Due to the temperature dependence of the bandgap of the active layer, the gain peak wavelength λ1 changes to the B mode wavelength λDF as the ambient temperature rises.
Since there is a large shift toward longer wavelengths than II, Δλ becomes large, and the present invention corrects this shift in advance at room temperature.
従って２本発明の作用は、その他の帯域のレーザについ
ても適用できる。Therefore, the effects of the present invention can also be applied to lasers in other bands.
第３図を用いて実施例を説明する。 An example will be explained using FIG.
従来例と異なる点は１回折格子の周期へが従来例ではΔ
＝１９９．６ ｎｍであったが、Δλ”１０ｎｍに対応
してＡ ＝２０２．２ ｎｍに形成したことである。The difference from the conventional example is that the period of one diffraction grating is Δ in the conventional example.
= 199.6 nm, but A = 202.2 nm corresponding to Δλ''10 nm.
回折格子はレジストをマスクにして二光束干渉法による
リソグラフィを用いて形成し、深さはエツチングにより
３０ ｎｍに調節する。The diffraction grating is formed using lithography using a two-beam interference method using a resist as a mask, and its depth is adjusted to 30 nm by etching.
ここで、レーザの各層の諸元はつぎのとおりである。Here, the specifications of each layer of the laser are as follows.
図番 眉毛 物質 Ｆ−バントキャリア濃度 厚さ
くｃａ＋−リ （ｎｎ＋）
１ 基板 ｎ−１ｎＰ Ｓｎ ２Ｅ１８ １
００μｍ（クラ９Ｆ）
２ ガイド ｎ−ＩｎＧａＡｓＰ Ｓｎ
５Ｅ１７ １５０３ 活性
ＩｎＧａＡｓＰ アンドープ −
１５０４ クラフト ｐ４ｎＰ
Ｃｄ ５８１７ ５００５
埋込 ｐ−ＩｎＰ Ｃｄ ２Ｅ１８ １
０００６ 埋込 ｎ−１ｎＰ Ｓｎ ５８１
７ １０００７ クラフト ｐ−ＩｎＰ
Ｃｄ ５Ｅ１７ １０００
８ コンタクト ｐ−１ｎＧａＡｓＰ Ｚｎ
ＩＥ１９ １０００実施例において
は、１．３μｍ帯のレーザについて説明したが、その他
の帯域のレーザについても本発明を適用すれば原理的に
も、実験的にも同様の効果が得られることが確認された
。Drawing number Eyebrow Substance F-band carrier concentration Thickness ca+-ri (nn+) 1 Substrate n-1nP Sn 2E18 1
00μm (Kura 9F) 2 Guide n-InGaAsP Sn
5E17 1503 Active InGaAsP Undoped -
1504 Craft p4nP
Cd 5817 5005
Embedded p-InP Cd 2E18 1
0006 Embedded n-1nP Sn 581
7 10007 Craft p-InP
Cd 5E17 1000
8 Contact p-1nGaAsP Zn
In the IE19 1000 example, a 1.3 μm band laser was explained, but it has been confirmed that the same effect can be obtained both in principle and experimentally if the present invention is applied to lasers in other bands. Ta.
以上詳細に説明したように本発明によれば、従来法に比
べて広い温度範囲で単一波長発振を維持することができ
る。As described in detail above, according to the present invention, single wavelength oscillation can be maintained over a wider temperature range than in conventional methods.
第１図は本発明を説明する実験データで、 ＤＦＢレー
ザの温度依存と発振モードを示す図。
第２図は利得ピーク波長λ１とＤＦＢモード波長ある。
図において。
■はｎ−１ｎＰ基板。
２はガイド層でｎ−１ｎＧａＡｓＰ層。
３は活性層でＩｎＧａＡｓＰ ］ｉ＋
４はクラッド層でｐ−ＩｎＰ ｆｆ１゜５は埋込層でｐ
−１ｎＰ層。
６は埋込層でｎ−ＩｎＰ層。
７はクラッド層でｐ４ｎＰ ｊｉう
８はコンタクト層でｐ−１ｎＧａＡｓＰ層。
９はＳｉＯ２層。
１０はｐ側゛電極でＴｉ／Ｐｔ／ＡｕＮ。
１１はｎ側電極でＡｕ／ＡｕＧｅ Ｎｔ１２は低反射膜
周囲温度（°Ｃ）
末路日月を説日月する実屑史データ
第 １ 図
周囲温度（°Ｃ）
入ＥＬヒ入１）ＦＢの５里ルイ欠在
第２図
（１）断面図
ＦＢｌ
第 ３
（２）Ａ−△側断面口
ｍ−す゛
図FIG. 1 is a diagram showing experimental data explaining the present invention, showing the temperature dependence and oscillation mode of a DFB laser. In FIG. 2, there is a gain peak wavelength λ1 and a DFB mode wavelength. In fig. ■ is an n-1nP board. 2 is a guide layer and is an n-1nGaAsP layer. 3 is the active layer, InGaAsP ] i+ 4 is the cladding layer, p-InP ff1゜5 is the buried layer, p
-1nP layer. 6 is a buried layer, which is an n-InP layer. 7 is a cladding layer, and 8 is a contact layer, which is a p-1nGaAsP layer. 9 is a SiO2 layer. 10 is a p-side electrode made of Ti/Pt/AuN. 11 is the n-side electrode, Au/AuGe Nt12 is a low reflective film Ambient temperature (°C) Actual scrap history data to explain the final date Figure 1 Ambient temperature (°C) Input EL input 1) FB of 5 Figure 2 (1) Cross-sectional view FBl Part 3 (2) A-△ side cross-sectional opening m-diagram
Claims (2)
長（λ＿Ｅ＿Ｌ）と、活性層と活性層を挟むクラッド層
との屈折率と回折格子のピッチより決まるＤＦＢモード
波長（λ＿Ｄ＿Ｅ＿Ｆ）との差（△λ＝λ＿Ｅ＿Ｌ−λ
＿Ｄ＿Ｆ＿Ｆ）を温度２０℃で負の値になるように、活
性層、クラッド層、回折格子構造を設定して形成するこ
とを特徴とする半導体発光装置の製造方法。(1) The difference (△λ =λ_E_L−λ
A method of manufacturing a semiconductor light emitting device, characterized in that an active layer, a cladding layer, and a diffraction grating structure are set and formed so that _D_F_F) becomes a negative value at a temperature of 20°C.
λが温度２０℃で −１５ｎｍ≦△λ≦−５ｎｍ であることを特徴とする特許請求の範囲第１項記載の半
導体発光装置の製造方法。(2) In the 1.3 μm band DFB laser, the above △
2. The method of manufacturing a semiconductor light emitting device according to claim 1, wherein λ satisfies -15 nm≦△λ≦-5 nm at a temperature of 20°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62056035A JPS63222487A (en) | 1987-03-11 | 1987-03-11 | Manufacture of semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62056035A JPS63222487A (en) | 1987-03-11 | 1987-03-11 | Manufacture of semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63222487A true JPS63222487A (en) | 1988-09-16 |
Family
ID=13015821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62056035A Pending JPS63222487A (en) | 1987-03-11 | 1987-03-11 | Manufacture of semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63222487A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0423528A2 (en) * | 1989-10-20 | 1991-04-24 | Alcatel SEL Aktiengesellschaft | Semiconductor laser with electrically tunable wavelength |
| EP0549123A2 (en) * | 1991-12-20 | 1993-06-30 | AT&T Corp. | Semiconductor laser having reduced temperature dependence |
| JP2017034034A (en) * | 2015-07-30 | 2017-02-09 | 浜松ホトニクス株式会社 | Distribution feedback lateral multimode semiconductor laser element |
-
1987
- 1987-03-11 JP JP62056035A patent/JPS63222487A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0423528A2 (en) * | 1989-10-20 | 1991-04-24 | Alcatel SEL Aktiengesellschaft | Semiconductor laser with electrically tunable wavelength |
| US5101414A (en) * | 1989-10-20 | 1992-03-31 | Alcatel N.V. | Electrically wavelength tunable semiconductor laser |
| EP0549123A2 (en) * | 1991-12-20 | 1993-06-30 | AT&T Corp. | Semiconductor laser having reduced temperature dependence |
| EP0549123B1 (en) * | 1991-12-20 | 1997-02-12 | AT&T Corp. | Semiconductor laser having reduced temperature dependence |
| JP2017034034A (en) * | 2015-07-30 | 2017-02-09 | 浜松ホトニクス株式会社 | Distribution feedback lateral multimode semiconductor laser element |
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