JPS6321870A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS6321870A JPS6321870A JP61166896A JP16689686A JPS6321870A JP S6321870 A JPS6321870 A JP S6321870A JP 61166896 A JP61166896 A JP 61166896A JP 16689686 A JP16689686 A JP 16689686A JP S6321870 A JPS6321870 A JP S6321870A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photoelectric conversion
- conversion element
- semiconductor device
- optical semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 238000007789 sealing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000008393 encapsulating agent Substances 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 238000000465 moulding Methods 0.000 abstract description 2
- 238000001721 transfer moulding Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 108091008695 photoreceptors Proteins 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の属する技術分野〕
本発明は入射先を電気信号に変換する光型変換素子を光
透過性樹脂を用いて封止した光半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical field to which the invention pertains) The present invention relates to an optical semiconductor device in which an optical conversion element that converts an incident light source into an electrical signal is sealed using a light-transmitting resin.
従来、入射先を電気信号に変換する光電変換装置は第２
図に示すように構成されている。Conventionally, the photoelectric conversion device that converts the incident source into an electrical signal has a second
It is configured as shown in the figure.
すなわち、光電変換素子１を光電変換素子支持部材２上
に固定保持し、光電変換素子１とリード端子２′の所定
の箇所に、極細金属線３を用いてワイヤボンディングし
、次に、光ｉｆｆ ｉＭ １’ｌ樹脂４を用いて成形し
、外形を形成する。その後、リード端子２′の外部導出
部７を必要長さに切断し、所望状態に曲げるなどして光
半導体装置を構成していた。That is, the photoelectric conversion element 1 is fixedly held on the photoelectric conversion element support member 2, and wire bonding is performed using the ultrafine metal wire 3 at predetermined locations of the photoelectric conversion element 1 and the lead terminals 2'. It is molded using iM 1'l resin 4 to form an external shape. Thereafter, the external lead-out portion 7 of the lead terminal 2' was cut to a required length and bent into a desired shape, thereby constructing an optical semiconductor device.
ところで、上記構成の従来の光半導体装置には、下達の
ごとき諸問題が存在する。By the way, the conventional optical semiconductor device having the above structure has various problems such as poor performance.
すなわち、光電変換素子１の光受容部が複数個（ｎ個）
の光受容部から構成されている場合、光電変換素子１の
ｎ個の光受容部に均一な光束を有する光６が入射すると
、該ｎ個の光受容部から得られる電気信号は、すべて同
一なレベルにならなければならないところ、実Ｖ、空上
は同一なレベルにならないという問題がある。また、ｎ
個の光受容部のうちのある１つの光受容部に光を入射さ
せ、その他の光受容部には光を入射させない場合におい
て：よ、光を入射させない光受容部にも暗７流よりも大
なる電気信号出力が得られてしまうという問題もある。That is, the photoelectric conversion element 1 has a plurality of light receiving parts (n pieces).
When light 6 having a uniform luminous flux is incident on the n photoreceptors of the photoelectric conversion element 1, the electric signals obtained from the n photoreceptors are all the same. The problem is that the actual level and the aerial level are not the same. Also, n
When light is made to enter one of the photoreceptors and not to the other photoreceptors: 7. There is also the problem that a large electrical signal output is obtained.
（発明の目的）
本発明は、前述した従来の光半導体装置における上述の
諸問題を克服して、優れた特性を有する光半導体装置を
提供することを目的とする。(Objective of the Invention) An object of the present invention is to overcome the above-mentioned problems in the conventional optical semiconductor device and provide an optical semiconductor device having excellent characteristics.
即ち、本発明の主たる目的は、光透過性樹脂を用いて封
止した光半導体装置において、光電変換素子を構成する
複数個の光受容部から得られる電気信号が均一である光
半導体装置を提供することにある。That is, the main object of the present invention is to provide an optical semiconductor device sealed using a light-transmitting resin, in which electrical signals obtained from a plurality of light receiving parts constituting a photoelectric conversion element are uniform. It's about doing.
（発明の構成）
本発明は、前述の従来装置における諸問題を解決して上
記本発明の目的を達成すべく鋭意研究を重ねたところ、
前述の従来装】の諸問題は以下のごとき原因によるもの
であることが判明した。(Structure of the Invention) The present invention has been made through intensive research to solve the problems in the conventional device described above and achieve the object of the present invention.
It has been found that the problems with the conventional system described above are due to the following causes.
前述の間−の４発生原因について、第２図を用いて説明
する。The causes of the above-mentioned four occurrences will be explained using FIG. 2.
即ち、空気Ｎ８から光透過性樹脂４および光電変換素子
４に直角に光線６つ（入射ｌ、た時光電変喚素子１の表
面９で、光が反射散乱される。反射散乱された光強度は
表面９の材料、面積度にも依るが角度依存性を持つ。反
射された散乱光は樹脂４がら空気層８へ抜けるものもあ
れば空気層８と樹脂４の界面１０で反射されるものもあ
る。That is, when six light rays (incidence l) are perpendicular to the light-transmitting resin 4 and the photoelectric conversion element 4 from the air N8, the light is reflected and scattered on the surface 9 of the photoelectric conversion element 1.The intensity of the reflected and scattered light is has angular dependence depending on the material and area of the surface 9.Some of the reflected scattered light passes through the resin 4 to the air layer 8, while others are reflected at the interface 10 between the air layer 8 and the resin 4. There is also.
スネルの法則によればある角度θ１で全反射する。θ１
は光透過性樹脂４と空気層８の屈折率により決定される
。例えば光透過性樹脂４、空気層８の屈折率をそれぞれ
１．５．１とした時、θ１は略４０度となり略４０度以
上になった場合全反射する。従って光電変換素子１の受
光部５の入射先量Ａは、次式！で表わされる。According to Snell's law, total reflection occurs at a certain angle θ1. θ1
is determined by the refractive index of the light-transmitting resin 4 and the air layer 8. For example, when the refractive indexes of the light-transmitting resin 4 and the air layer 8 are each 1.5.1, θ1 is approximately 40 degrees, and when it exceeds approximately 40 degrees, total reflection occurs. Therefore, the incident amount A of the light receiving section 5 of the photoelectric conversion element 1 is calculated by the following formula! It is expressed as
Ａ＝（光線６の光量）＋（θｒ （θ「≧θ１）をなす
光線の全反射光量の積分値）＋
（θｒ （θｒ〈θ１）をなす光線の反射光量の積分値
）・・・・・Ｉ
式１の第３項においてθ「の値がθユより小さい時反射
光量は非常に小さく無視できる値であるが、θｒが０１
にほぼ近い値になった時に反射光量は犬になる。A = (light amount of light ray 6) + (integral value of total reflected light amount of light rays forming θr (θ "≧θ1)) + (integral value of reflected light amount of light rays forming θr (θr<θ1))...・I In the third term of Equation 1, when the value of θ is smaller than θ, the amount of reflected light is very small and can be ignored, but when θr is 01
When the value is almost close to , the amount of reflected light becomes a dog.
つまり受光部５の入射先量は光線６の光量と光電変換素
子１面上で受光部５を中心に１１を半径にして描いた円
の円周近傍および円外から反射した光の入射先量の和と
なり、後者の不要反射光が入射するために光学特性異常
が生じ、前述のごとき問題が生じることとなる。In other words, the amount of light incident on the light receiving section 5 is the amount of light ray 6 and the amount of light reflected from near the circumference and outside the circle of a circle drawn on the surface of the photoelectric conversion element with the light receiving section 5 as the center and radius 11. Since the latter unnecessary reflected light enters, an optical characteristic abnormality occurs, resulting in the above-mentioned problem.
本発明は、上述の知見に基づいて更に研究を続けた結果
完成するに至ったものである。The present invention was completed as a result of further research based on the above-mentioned findings.
即ち、本発明の光半導体装置は、光電変換素子を光電変
換素子支持部材上に固定保持し、該素子とリード端子を
極細金属線を介して電気的に接続したのち、光透過性樹
脂を用いて封止した光半導体装置であって、封止体外形
の少なくとも光透過面と光電変換素子との間の厚さおよ
び前記光透過面の形成が、光電変換素子の受光部からの
反射光がさらに封止体外形面で反射されて別の受光部へ
入射する入射先および光電変換素子の受光部周辺からの
反射光がさらに封止体外形面で反射されて受光部へ入射
する入射先の影響を減少させうる厚味および形状である
ことを特徴とするものである。That is, in the optical semiconductor device of the present invention, a photoelectric conversion element is fixedly held on a photoelectric conversion element support member, and the element and lead terminals are electrically connected via ultrafine metal wires, and then a light-transmitting resin is used to connect the element and lead terminals. An optical semiconductor device sealed with an optical semiconductor device, wherein the thickness of the outer shape of the sealed body at least between the light transmitting surface and the photoelectric conversion element and the formation of the light transmitting surface are such that reflected light from the light receiving part of the photoelectric conversion element is Furthermore, the incident light is reflected from the outer surface of the sealing body and enters another light receiving part, and the reflected light from around the light receiving part of the photoelectric conversion element is further reflected by the outer face of the sealing body and enters the light receiving part. It is characterized by a thickness and shape that can reduce the influence.
以下、図示の実施例により本発明の詳細な説明するが、
本発明はこれにより何ら限定されるものではない。Hereinafter, the present invention will be explained in detail with reference to illustrated embodiments.
The present invention is not limited to this in any way.
第１図は、本発明の光半導体装置の１実施例を模式的に
示す断面略図である。なお、第１図において、前述の第
２図と同一符号を付したものは、第２図と同一のものを
示している。すなわち光電変換素子１を光電変換素子支
持部材２に固定保持し、光電変換素子１とリード端子２
′の所定箇所に極細金属線３を用いてワイヤボンディン
グし、次に光透過性樹脂４を用いて、トランスファーモ
−ルド法等の成形手段により１体的に成形し、外形を形
成する。成形型は、打止体外形の少なくとも光透過面と
光電変換素子との間の距離が従来のものに比べて犬であ
る型を用いる。即ち、第１図において、ｄｌを従来の光
半導体装置の封止体外形表面と光電変換素子１との間の
距離、 ｄ、 ＋ ｄ２を本発明の打止体外形の少な
くとも光透過面と光；変））素子；との間の距離とする
と、従来のもつの場合 Ｄ＝ｄ＋であるのに対し２本発
明の場合Ｄ ＝ ｄ、 ＋ ｄ２（ａ２＞ Ｏ）であ
るようにする。その後、リード端子２′の外部導出部７
を必要長さに切断し、所望形状に曲げるなどして、光半
導体装置を形成する。FIG. 1 is a schematic cross-sectional view schematically showing one embodiment of the optical semiconductor device of the present invention. In FIG. 1, the same reference numerals as in FIG. 2 described above indicate the same components as in FIG. 2. That is, the photoelectric conversion element 1 is fixedly held on the photoelectric conversion element support member 2, and the photoelectric conversion element 1 and the lead terminal 2 are connected to each other.
Wire bonding is performed using a very fine metal wire 3 at a predetermined location of 1, and then the light transmitting resin 4 is integrally molded by a molding method such as a transfer molding method to form an outer shape. The mold used is one in which the distance between at least the light transmitting surface of the outside of the stopper and the photoelectric conversion element is longer than that of conventional molds. That is, in FIG. 1, dl is the distance between the outer surface of the sealed body of the conventional optical semiconductor device and the photoelectric conversion element 1, and d, + d2 is the distance between at least the light-transmitting surface of the outer shape of the molded body of the present invention and the light. In the case of the conventional case, D = d+, whereas in the case of the present invention, D = d, + d2 (a2> O). After that, the external lead-out portion 7 of the lead terminal 2'
An optical semiconductor device is formed by cutting the material to a required length and bending it into a desired shape.
光線６が光ｉ！を過性樹脂４の外形および光電変換素子
１に直角に入射した時、θをスネルの法則に従う全反射
角度とすると、光電変換素子１の受光部５に入射する光
量は、従来の光半導体装置（ｄ２＝０）の場合、次式Ｉ
＋で表わされるものとなる。Ray 6 is light i! When is incident on the outer shape of the transient resin 4 and the photoelectric conversion element 1 at right angles, and θ is the total reflection angle according to Snell's law, the amount of light incident on the light receiving part 5 of the photoelectric conversion element 1 is equal to that of the conventional optical semiconductor device. (d2=0), the following formula I
It will be represented by +.
Ａ＝（光線６の光量）＋（光電変換素子１面上でｐ、を
半径にして描いた円の円周近傍と円外から反射した光の
入射先量の和）・・・・・１１これに対し、本発明の光
墨導体装ＦＦ （ｄ２≠０）の場合、次式ｉｌ＋で表わ
されるものとなる。A = (amount of light ray 6) + (sum of the amount of incident light reflected from the vicinity of the circumference of a circle drawn on one surface of the photoelectric conversion element with p as the radius and the amount of light reflected from outside the circle)...11 On the other hand, in the case of the optical ink conductor device FF (d2≠0) of the present invention, it is expressed by the following formula il+.
Ａ＝（光線６の光量）＋（光電変換素子１面上で、Ｑ２
を半径にして描いた円の円周近傍と円外から反射した光
の入射先量の和）・・・・・ＩＩＩ式ＩＩ＋において、
ＪＩＨ＝２ｄｌ ｔａｎθ１ｘ２＝２ぐｄ、＝−づ２）
ｊａｎｅ１
１１２Ｂ、 ＋ ＝ ２ｄ２ｊａｎθ１（θ１．１１は
一定）
となる。従ってａ２（−嵩上げ高さ）を犬きくすればす
る程ｕ２−４．の値が犬になることにより反射光の入射
する領域が狭くなり反射による影響が少なくなる。また
光の強度は光路長の二乗に反比例することから、本発明
の場合、光路長が長くなるゆえに、反射光の入射する強
度の絶対値も減少し影響が少なくなる。つまり反射光の
影響を少なくするためには、光電変換素子１の受光部以
外からの反射光の影響を少なくするため受光部以外は光
到達できないようにマスキングすることと、光電変換素
子１の任意の受光部が略１□を半径にして描いた円内に
入るようにｄ２（＝嵩上げ高さ）の７厚さおよび打止体
外形の少なくとも光透過面形状を設計すれば良い。また
マスキングしても光電変換素子１面の受光部部具外にも
光到達する場合、また任意の受光部が略λ２を半径にし
て描いた円外に存在せざるを得ない場合は予め影■の程
度を把握しｄ２（−嵩上げ高さ）および打止体外形の少
なくとも光透過面形状を設計すれば良い。A=(light intensity of light ray 6)+(on photoelectric conversion element 1 surface, Q2
Sum of the amount of incident light reflected from the vicinity of the circumference of a circle drawn with radius and outside the circle)...III In formula II+,
JIH=2dl tanθ1x2=2gud,=-zu2)
jane1 112B, + = 2d2janθ1 (θ1.11 is constant). Therefore, the more a2 (-raised height) is set, the more u2-4. When the value of is set to dog, the area into which the reflected light enters becomes narrower, and the influence of reflection is reduced. Furthermore, since the intensity of light is inversely proportional to the square of the optical path length, in the case of the present invention, since the optical path length becomes long, the absolute value of the incident intensity of the reflected light also decreases, and the influence is reduced. In other words, in order to reduce the influence of reflected light, in order to reduce the influence of reflected light from areas other than the light receiving part of the photoelectric conversion element 1, it is necessary to mask the parts other than the light receiving part so that the light cannot reach the parts other than the light receiving part. The thickness of d2 (=raised height) and at least the shape of the light-transmitting surface of the stopper body may be designed so that the light-receiving portion falls within a circle drawn with a radius of approximately 1□. In addition, even if masking is performed, if light reaches outside the light-receiving part on one side of the photoelectric conversion element, or if any light-receiving part must exist outside the circle drawn with approximately λ2 as the radius, there will be a shadow in advance. It is sufficient to grasp the extent of (2) and design d2 (-height of raised height) and at least the shape of the light transmitting surface of the outer shape of the stopper.
次に本発明の効果について第１図を用いて説明する。本
発明の光半導体装置において、ｄ２が大になればなる程
反尉の影響が少なくなるとともに、光路長が長くなるこ
とによる反射光量の絶対値が小さくなりざらに影響が少
なくなる。Next, the effects of the present invention will be explained using FIG. 1. In the optical semiconductor device of the present invention, the larger d2 is, the less the influence of reflection becomes, and the longer the optical path length becomes, the smaller the absolute value of the amount of reflected light, and the less the influence becomes.
本発明の光半導体装置は、光電変換素子がＣＣＤ等受光
面か多分割化されているラインセンサー、エリアセンサ
ー等反射の影響がシビアに問われるセンサーに有効であ
る。The optical semiconductor device of the present invention is effective for sensors such as line sensors and area sensors in which the photoelectric conversion element has a multi-divided light receiving surface such as a CCD, and sensors where the influence of reflection is seriously considered.
第３〜４図を用いて、本発明の光半導体装置をカメラの
オートフォーカスセンサーとして用いた時の光学特性向
上効果について説明する。The effect of improving optical characteristics when the optical semiconductor device of the present invention is used as an autofocus sensor of a camera will be explained using FIGS. 3 and 4.
第３図は本発明の光半導体装置をカメラのＡＦセンサー
として用いた場合の光学系展開区を示す。図中、１３〜
１８は焦点検出装置（ＡＦｕ ）を構成する部品を夫々
示している。即ち、１３はピント面近傍に置かれた視野
マスク、１４はフィールドレンズ、１５は開口１５ａ
、１５ｂを持つ測距光束分割用マスク、１６は二次結像
レンズで、１６ａ 、 １６ｂがレンズ部である。１７
は測距用センサー（本発明の光半導体装置）で、多数の
画素が一直線上に並んだ一対のラインセンサー１７ａ
、 １７ｂを有している。FIG. 3 shows the development of an optical system when the optical semiconductor device of the present invention is used as an AF sensor of a camera. In the figure, 13~
Reference numeral 18 indicates the parts constituting the focus detection device (AFu). That is, 13 is a field mask placed near the focal plane, 14 is a field lens, and 15 is an aperture 15a.
, 15b, a distance measuring beam splitting mask, 16 a secondary imaging lens, and 16a and 16b lens parts. 17
is a distance measuring sensor (optical semiconductor device of the present invention), which is a pair of line sensors 17a in which a large number of pixels are arranged in a straight line.
, 17b.
１８ａ 、Ｌ８ｂは各々二次結像レンズ１６のレンズ部
１６ａ 、１５ｂによって投影された１３ａの像で、該
１８ａ 、 １８ｂは境界部がぴったり請接する様に１
５ａの大きさが決められている。１４は通過した光束を
有効に測距光束分割用マスク１５および二次結像レンズ
１６に導くためのレンズである。18a and L8b are the images of 13a projected by the lens parts 16a and 15b of the secondary imaging lens 16, respectively, and these 18a and 18b are 18a and 18b so that their boundaries are exactly connected to each other.
The size of 5a is determined. Reference numeral 14 denotes a lens for effectively guiding the passed light flux to a distance measuring light flux dividing mask 15 and a secondary imaging lens 16.
従って当光学系において撮影レンズを通った光束は１３
の上で結像し、更に開口１５ａ 、 １５ｂを通過して
、レンズ部１ｔｉａ 、１６ｂによりラインセンサー１
７ａ 、 １７ｂ上の１８ａ 、 １８ｂ内に再結像さ
れる。そしてラインセンサー１７ａ 、 １７ｂ上の２
像の相対位置を検出して合焦状、預を判別する様になっ
ている。Therefore, in this optical system, the light flux passing through the photographing lens is 13
The image is formed on the line sensor 1 by the lens portions 1tia and 16b, and then passes through the apertures 15a and 15b.
It is re-imaged into 18a, 18b on 7a, 17b. and 2 on line sensors 17a and 17b.
It detects the relative position of the image and determines whether it is in focus or not.
第４図にその原理を示す。ラインセンサー１７ａ１７ｂ
上に投影された像の各々の出力をＥａ、 Ｅｂとすると
、合焦状態では２像の距ＢＳがある値Ｓｏとなるように
設定されているものとする、そして撮影レンズが非合焦
の状態ではＳ≠ Ｓｏとなるが、これを検出するために
はＥａとＥｂを相対的にｂｉｔシフトさせて２像の相関
をとるという手法が用いられる。Figure 4 shows the principle. Line sensor 17a17b
Let Ea and Eb be the outputs of the images projected above, and assume that in the in-focus state, the distance BS between the two images is set to a certain value So, and when the photographic lens is out of focus, In this state, S≠So, but in order to detect this, a method is used in which Ea and Eb are relatively bit-shifted and the two images are correlated.
ここでもし１８ａ上の像が前述した反射により１８ａ上
自体の像に反射の影響を及ぼすとか、ｔａｂ上の像が前
述した反射により１８ｂ上自体の像に反射の影響を及ぼ
すとか、また１８ａ上の像が前述した反射により１８ｂ
上の像に反射の影響を及ぼすとか、１８ｂ上の像が前述
した反射により１８ａ上の像に反射の影響を及ぼすとＥ
ａとＥｂは本来の被写体輝度分布とは異なった形状とな
る。ので真の被写体情報とは異なった情報で相関演算を
していることになり、その結果として検出されたピント
情報に誤差を生ずることとなる。Here, if the image on 18a has a reflection effect on the image on 18a itself due to the above-mentioned reflection, or the image on tab has a reflection effect on the image on 18b itself due to the above-mentioned reflection, or Due to the above-mentioned reflection, the image of 18b
If the image on 18b has a reflection effect on the image on 18a, or the image on 18b has a reflection effect on the image on 18a due to the aforementioned reflection, then E
a and Eb have shapes different from the original subject brightness distribution. Therefore, the correlation calculation is performed using information different from the true subject information, and as a result, an error occurs in the detected focus information.
本発明の光半導体装置を用いると反射の影響が減少し正
確なピント情報を与えることになり、特にＡＦとして有
利なものである。Use of the optical semiconductor device of the present invention reduces the influence of reflection and provides accurate focus information, which is particularly advantageous for AF.
東１図は本発明の光半導体装！の一実施例を模式的に示
す断面略図であり、第２図は従来の光半導体装置を模式
的に示す断面略図である。第３図は、本発明の光半導体
装置をカメラのＡＦセンサーとして用いた場合の光学系
展開図であり、第４図は、その原理を説明するための図
である。
１・・・・・光電変換素子、２・・・・・光電変換素子
支持部材、２′・・・・・リード端子、３・・・・・極
細金属線、４・・・・・光透過性樹脂、５・・・・・光
電変換素子の受光部、６・・・・・光線、７・・・・・
リード端子の外部導出部、８・・・・・空気層、９・・
・・・光電変換素子の表面、ｌＯ・・・・・ 光透過性
樹脂と空気層との界面、１３・・・・・ 視舒マスク、
１４・・・・・フィールドレンズ、１５・・・・・ 測
距光束分割用マスク、１５ａ 、 １５ｂ・・・・・開
口、１６・・・・・ 二次結像レンズ、１６ａ ％ １
８ｂ・・・・・レンズ部、１７・・・・・測距用センサ
ー、 １７ａ 、１７ｂ・・・・・ラインセンサー、１
８ａ 、 １８ｂ・・・・・投影された１３ａの像図面
の浄書（内容に変更なし）
第１図
第２図
！（！（
第３図
ｊρａ
第４図
手 続 補 正 書 （方式）％式％
１、事件の表示
昭和６１年特許願１６６８９６号
２、発明の名称
光 半 導 体 装 蓋
３、補正をする者
事件との関係 特許出願人
住所 東京都大田区下丸子３丁目３０番２号名称
（１００）キャノン株式会社
４、代理人
住所 東京都千代田区麹町３丁目１２番地６麹町グリ
ーンビル
６、補正の対象 明細書及び図面
７、補正の内容
願書に最初に添付した明細書及び図面の浄書・別紙のと
おり（内容に変更なし）
以 上East figure 1 is the optical semiconductor device of the present invention! FIG. 2 is a schematic cross-sectional view schematically showing one embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view schematically showing a conventional optical semiconductor device. FIG. 3 is a developed view of the optical system when the optical semiconductor device of the present invention is used as an AF sensor of a camera, and FIG. 4 is a diagram for explaining the principle thereof. 1...Photoelectric conversion element, 2...Photoelectric conversion element support member, 2'...Lead terminal, 3...Superfine metal wire, 4...Light transmission 5... Light receiving part of photoelectric conversion element, 6... Light ray, 7...
External lead-out portion of lead terminal, 8...Air layer, 9...
...Surface of photoelectric conversion element, lO... Interface between light-transmitting resin and air layer, 13... Visual mask,
14...Field lens, 15...Distance measurement light flux division mask, 15a, 15b...Aperture, 16...Secondary imaging lens, 16a % 1
8b...Lens section, 17...Distance measurement sensor, 17a, 17b...Line sensor, 1
8a, 18b...Engraving of the projected image drawing of 13a (no change in content) Figure 1 Figure 2! (!( Figure 3 jρa Figure 4 Procedures Amendment (method) % formula % 1, Indication of the case 1985 Patent Application No. 166896 2, Title of the invention Optical semiconductor packaging 3, Person making the amendment Relationship to the incident Patent applicant address 3-30-2 Shimomaruko, Ota-ku, Tokyo Name
(100) Canon Co., Ltd. 4, Agent Address: 6 Kojimachi Green Building, 3-12-6 Kojimachi, Chiyoda-ku, Tokyo, Subject of amendment: Description and drawings 7, Contents of amendment: An engraving of the specification and drawings originally attached to the application.・As shown in the attached sheet (no change in content)
Claims (2)
持し、該素子とリード端子を極細金属線を介して電気的
に接続したのち、光透過性樹脂を用いて封止してなる光
半導体装置であって、封止体外形の少なくとも光透過面
と光電変換素子との間の厚さおよび前記光透過面の形成
が、光電変換素子の受光部からの反射光がさらに封止体
外形面で反射されて別の受光部へ入射する入射先および
光電変換素子の受光部周辺からの反射光がさらに封止体
外形面で反射されて受光部へ入射する入射先の影響を減
少させうる厚味および形状であることを特徴とする光半
導体装置。(1) A photoelectric conversion element is fixedly held on a photoelectric conversion element support member, the element and lead terminals are electrically connected via ultra-thin metal wires, and then sealed using a light-transmitting resin. In the semiconductor device, at least the thickness between the light transmitting surface and the photoelectric conversion element of the outer shape of the encapsulant and the formation of the light transmitting surface are such that the reflected light from the light receiving part of the photoelectric conversion element is further adjusted to the outer shape of the encapsulant. The influence of the incident destination that is reflected by a surface and enters another light receiving section and the reflected light from around the light receiving section of the photoelectric conversion element is further reflected by the outer surface of the sealing body and enters the light receiving section can be reduced. An optical semiconductor device characterized by its thickness and shape.
が凸状形状であり、その他の部分の封止体外形よりも厚
味が厚い特許請求の範囲第（１）項に記載された光半導
体装置。(2) At least the light-transmitting surface of the optical semiconductor device has a convex outer shape, and is thicker than the other parts of the sealed body as described in claim (1). Optical semiconductor device.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61166896A JPH07112050B2 (en) | 1986-07-16 | 1986-07-16 | Optical semiconductor device |
| EP87306304A EP0253664B1 (en) | 1986-07-16 | 1987-07-16 | Semiconductor photo-sensor and method for manufacturing the same |
| DE8787306304T DE3782201T2 (en) | 1986-07-16 | 1987-07-16 | SEMICONDUCTOR PHOTOSENSOR AND METHOD FOR THE PRODUCTION THEREOF. |
| US08/472,110 US5583076A (en) | 1986-07-16 | 1995-06-07 | Method for manufacturing a semiconductor photo-sensor |
| US09/013,031 US5912504A (en) | 1986-07-16 | 1998-01-26 | Semiconductor photo-sensor and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61166896A JPH07112050B2 (en) | 1986-07-16 | 1986-07-16 | Optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6321870A true JPS6321870A (en) | 1988-01-29 |
| JPH07112050B2 JPH07112050B2 (en) | 1995-11-29 |
Family
ID=15839635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61166896A Expired - Fee Related JPH07112050B2 (en) | 1986-07-16 | 1986-07-16 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07112050B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5350914A (en) * | 1991-08-09 | 1994-09-27 | Fuji Xerox Co., Ltd. | Image reading apparatus |
| JP2004179495A (en) * | 2002-11-28 | 2004-06-24 | Oki Electric Ind Co Ltd | Semiconductor device |
| US8630867B2 (en) | 2007-04-23 | 2014-01-14 | Samsung Electronics Co., Ltd. | Remote-medical-diagnosis system method |
-
1986
- 1986-07-16 JP JP61166896A patent/JPH07112050B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5350914A (en) * | 1991-08-09 | 1994-09-27 | Fuji Xerox Co., Ltd. | Image reading apparatus |
| JP2004179495A (en) * | 2002-11-28 | 2004-06-24 | Oki Electric Ind Co Ltd | Semiconductor device |
| US7009295B2 (en) | 2002-11-28 | 2006-03-07 | Oki Electric Industry Co., Ltd. | Semiconductor device |
| US8630867B2 (en) | 2007-04-23 | 2014-01-14 | Samsung Electronics Co., Ltd. | Remote-medical-diagnosis system method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07112050B2 (en) | 1995-11-29 |
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