JPS63218194A - Thin film el device - Google Patents
Thin film el deviceInfo
- Publication number
- JPS63218194A JPS63218194A JP62052727A JP5272787A JPS63218194A JP S63218194 A JPS63218194 A JP S63218194A JP 62052727 A JP62052727 A JP 62052727A JP 5272787 A JP5272787 A JP 5272787A JP S63218194 A JPS63218194 A JP S63218194A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting layer
- thin film
- praseodymium
- emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 8
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 11
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052779 Neodymium Inorganic materials 0.000 claims description 7
- 238000000295 emission spectrum Methods 0.000 claims description 7
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 7
- -1 praseodymium ions Chemical class 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 22
- 230000007704 transition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910019322 PrF3 Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002798 neodymium compounds Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、電界の印加に応答してＥＬ発光を放射する発
光層を透明電極と背面電極の間に介設して成る薄膜ＥＬ
素子に関するものである。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a thin film EL device in which a light emitting layer that emits EL light in response to the application of an electric field is interposed between a transparent electrode and a back electrode.
It is related to the element.
〈従来の技術、発明が解決しようとする問題点〉透明ｉ
！極、下部絶縁層、発光層、上部絶縁層および背面電極
を、例えばガラス基板上に順次積層して成る、所謂２重
絶縁構造薄膜ＥＬ素子は、長寿命、高輝度等の特長をも
つ。既に、発光層としてＺ ｎ Ｓ ： Ｍ ｎ膜を用
いた素子は固体平面表示装置として実用化されている。<Prior art and problems to be solved by the invention> Transparent i
! A thin film EL device with a so-called double insulation structure, in which a pole, a lower insulating layer, a light emitting layer, an upper insulating layer, and a back electrode are sequentially laminated on, for example, a glass substrate, has features such as long life and high brightness. Elements using ZnS:Mn films as light-emitting layers have already been put into practical use as solid-state flat display devices.
このＺｎＳ：Ｍｎ薄膜ＥＬ素子は黄橙色の発光を示す。This ZnS:Mn thin film EL device emits yellow-orange light.
豊富な情報表示を行なうため、さまざまな発光色をもつ
素子が強く望まれている。このような状況のもとで、希
土類元素をドープしたＺｎＳ膜を発光層としたＥＬ素子
は多色化に対してきわめて重要である。希土類イオンの
ｆ−ｆ遷移に基づく発光のピーク波長は発光層母体等の
外部の影響をほとんど受けなめ。In order to display a wealth of information, elements that emit light in a variety of colors are strongly desired. Under these circumstances, an EL element whose light emitting layer is a ZnS film doped with a rare earth element is extremely important for achieving multicolor. The peak wavelength of light emission based on the f-f transition of rare earth ions is almost unaffected by external factors such as the light-emitting layer matrix.
しかも、多くの希土類イオンの発光ピーク波長は可視域
にあり、例えば、ＺｎＳ：Ｓｍ、ＺｎＳ：ＴｂおよびＺ
ｎＳ：Ｔｍでは、それぞれ赤色、緑色および青色発光が
得られる。しかし、Ｚｎｓ：Ｔｍでは発光輝度がきわめ
て低く、新たな青色発光用発光層材料が強く望まれてい
る。Moreover, the emission peak wavelength of many rare earth ions is in the visible range, for example, ZnS:Sm, ZnS:Tb and Z
In nS:Tm, red, green and blue emission are obtained, respectively. However, the luminance of Zns:Tm is extremely low, and a new light-emitting layer material for blue light emission is strongly desired.
一方、発光中心としてＰｒＦ３をドープしたＺｎＳ発光
層を用いたＥＬ素子は、主として３ＰＯ−３Ｈ４および
３ＰＱ−３Ｆ２遷移に基づく、波長約５０００λおよび
６５００λの発光を示す。発光色は白色となる（ Ｍ、
Ｙｏｓｈｉｄａ ｅｔ ａｌ、：１９８０ ＳＩＤ
Ｉｎｔ。On the other hand, an EL device using a ZnS light-emitting layer doped with PrF3 as a light-emitting center emits light at wavelengths of about 5000λ and 6500λ mainly based on 3PO-3H4 and 3PQ-3F2 transitions. The emitted light color is white (M,
Yoshida et al.: 1980 S.I.D.
Int.
Ｓｙｍｐ、 Ｄｉｇ、ｏｆ Ｔｅｃｈ、 Ｐａｐｅｒｓ
） 。ｆ −ｆ遷移に基づく発光において、発光ピーク
波長は発光層作製方法によらず一定である。したがって
、ＺｎＳ：Ｐｒ膜を用いた場合にも発光色の制御はでき
なかった。なお、色フィルタ等で発光色を制御すること
が可能である。しかし、色フィルタは透過させ之い波長
の光を完全に透過させることは出来なく、また、フィル
タを用いることによるコストの上昇は実用化上問題であ
る。Symp, Dig, of Tech, Papers
). In light emission based on f-f transition, the light emission peak wavelength is constant regardless of the method for producing the light emitting layer. Therefore, even when using a ZnS:Pr film, it was not possible to control the emission color. Note that it is possible to control the emitted light color using a color filter or the like. However, color filters cannot completely transmit light of wavelengths that cannot be transmitted, and the increase in cost due to the use of filters is a problem in practical use.
く問題点を解決するための手段〉
本発明は上記の問題点に対し、発光層中にプラセオジウ
ムとネオジウムを同時にドープすることにより、プラセ
オジウムイオンによる各発光ピークのピーク強度比の制
御が出来るという新しく発見された現象を用い、発光色
を変える技術を提供するものである。Means for Solving the Problems> The present invention solves the above problems by providing a new method in which the peak intensity ratio of each luminescence peak due to praseodymium ions can be controlled by simultaneously doping praseodymium and neodymium into the luminescent layer. This technology provides a technology that uses the discovered phenomenon to change the color of emitted light.
〈実施例〉
第４図に示すように１ガラス基板ｌ上に、透明電極２、
下部絶縁層３、発光層４、上部絶縁層５および背面電極
６を順次積層することにより、薄膜ＥＬ素子を作製した
。透明電極としてスパッタ法によるＩＴＯ膜を用いた。<Example> As shown in FIG. 4, a transparent electrode 2,
A thin film EL device was manufactured by sequentially stacking a lower insulating layer 3, a light emitting layer 4, an upper insulating layer 5, and a back electrode 6. An ITO film formed by sputtering was used as a transparent electrode.
上下絶縁層として、電子ビーム蒸着法またはスパッタ法
により作製したＹ２Ｏ２、Ｔａ２０５．Ａ１２０Ｂ、
Ｓ ｉ（’）２． Ｓ ｉ３ Ｎ４等の単層膜または積
層膜をそれぞれ用いた。背面電極はＡＩ蒸着膜を用いた
。As the upper and lower insulating layers, Y2O2, Ta205. A120B,
S i(')2. A single layer film or a laminated film such as S i3 N4 was used. An AI vapor-deposited film was used for the back electrode.
本発明において重要な膜である発光層は以下に示すよう
にして作製した。成膜方法には種々の方法があるが、こ
こではスパッタ法を例にとり説明する。ＺｎＳ粉末、Ｐ
ｒ Ｆ３粉末およびＮｃｉ２０３粉末の混合物をター
ゲットとし、Ａｒガスをスパッタガスとした。なお、プ
ラセオジウムおよびネオジウムの化合物としては、上記
フン化物、酸化物に限定されない。基板はスパッタ中５
０°Ｃ〜５００°Ｃに加熱させた。The light-emitting layer, which is an important film in the present invention, was produced as shown below. Although there are various methods for forming a film, a sputtering method will be explained here as an example. ZnS powder, P
A mixture of rF3 powder and Nci203 powder was used as the target, and Ar gas was used as the sputtering gas. Note that the praseodymium and neodymium compounds are not limited to the above-mentioned fluorides and oxides. The substrate is being sputtered 5
It was heated from 0°C to 500°C.
本発明者等は、Ｐｒ３＋イオンによる発光スペクトルに
おける各発光ピークの強度が、発光層中にプラセオジウ
ム以外にネオジウムをドープすることにより変化する事
をはじめて見い出した。The present inventors have discovered for the first time that the intensity of each emission peak in the emission spectrum due to Pr3+ ions changes by doping neodymium in addition to praseodymium into the light emitting layer.
第１図に、３ＰＱ→３Ｈ４遷移【基づく波長約５０００
λの発光ピーク強度に対する、３ＰＱ −ａＦ２遷移に
基づく波長約６５００人の発光ピーク強度が、ネオジウ
ムとプラセオジウムの濃度比Ｎｄ／Ｐｒにより、どのよ
うに変化するかを示す。図から明らかなように、発光層
中にネオジウムを加えることにより、Ｐｒ３＋イオンの
発光である３Ｐ。Figure 1 shows the 3PQ → 3H4 transition [based on a wavelength of approximately 5000
It shows how the emission peak intensity at a wavelength of about 6500 based on the 3PQ-aF2 transition changes with the concentration ratio Nd/Pr of neodymium and praseodymium with respect to the emission peak intensity of λ. As is clear from the figure, by adding neodymium to the light emitting layer, 3P, which is the light emission of Pr3+ ions, is generated.
−３Ｆ２遷移に基づく赤色成分は著しく減少する。The red component based on the −3F2 transition is significantly reduced.
したがって、従来技術では発光層中にプラセオジウムを
単独にドープし、白色発光しか得られなかったが、本発
明により、青緑色発光を得ることができる。Therefore, in the prior art, only praseodymium was doped into the light-emitting layer and only white light emission was obtained, but the present invention makes it possible to obtain blue-green light emission.
第２図に、本発明によって得られ７’（ＥＬ素子の発光
スペクトルを示す。なお、比較のために、従来技術によ
る発光スペクトルを第３図に示す。FIG. 2 shows the emission spectrum of the 7' (EL element) obtained according to the present invention. For comparison, FIG. 3 shows the emission spectrum according to the prior art.
〈発明の効果〉
以上詳細に説明したように、本発明は、ＺｎＳ膜中にプ
ラセオジウムとネオジウムをドープすることにより、プ
ラセオジウムイオンによる発光スペクトルを制御するこ
とができるという全く新規な現象の発見に基づきなされ
たものであり、本発明により、高輝度の青色系発光を呈
する薄膜ＥＬ素子の実現が可能となったものである。<Effects of the Invention> As explained in detail above, the present invention is based on the discovery of a completely new phenomenon in which the emission spectrum of praseodymium ions can be controlled by doping praseodymium and neodymium into a ZnS film. The present invention has made it possible to realize a thin film EL element that emits high-intensity blue light.
第１図は、発光ピーク強度比の、ネオジウムとプラセオ
ジウムの濃度比依存性を示す図、第２図は本発明による
ＥＬ発光スペクトルを示す図、第３図は従来技術による
ＥＬ発光スペクトルを示す図、第４図は薄＋１ｉＥＬ素
子の構造図である。
符号の説明
ｌニガラス基板、２：透明電極、３：下部絶縁層、４：
発光層、５：上部絶縁層、６：背面電極。FIG. 1 is a diagram showing the dependence of the emission peak intensity ratio on the concentration ratio of neodymium and praseodymium, FIG. 2 is a diagram showing the EL emission spectrum according to the present invention, and FIG. 3 is a diagram showing the EL emission spectrum according to the conventional technology. , FIG. 4 is a structural diagram of a thin +1i EL device. Explanation of symbols 1 glass substrate, 2: transparent electrode, 3: lower insulating layer, 4:
Light emitting layer, 5: upper insulating layer, 6: back electrode.
Claims (1)
透明電極と背面電極の間に介設して成る薄膜ＥＬ素子に
於いて、プラセオジウムおよびネオジウムをドープした
硫化亜鉛膜を発光層とすることにより、プラセオジウム
イオンによる発光スペクトルを制御したことを特徴とす
る薄膜ＥＬ素子。1) In a thin film EL element in which a light emitting layer that emits EL light in response to the application of an electric field is interposed between a transparent electrode and a back electrode, a zinc sulfide film doped with praseodymium and neodymium is used as the light emitting layer. A thin film EL device characterized in that the emission spectrum of praseodymium ions is controlled by.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62052727A JPS63218194A (en) | 1987-03-06 | 1987-03-06 | Thin film el device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62052727A JPS63218194A (en) | 1987-03-06 | 1987-03-06 | Thin film el device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63218194A true JPS63218194A (en) | 1988-09-12 |
| JPH0459759B2 JPH0459759B2 (en) | 1992-09-24 |
Family
ID=12922954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62052727A Granted JPS63218194A (en) | 1987-03-06 | 1987-03-06 | Thin film el device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63218194A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996015648A1 (en) * | 1994-11-14 | 1996-05-23 | Mitsui Mining & Smelting Co., Ltd. | Thin-film electroluminescent element |
| KR100430565B1 (en) * | 2001-05-31 | 2004-05-10 | 한국전자통신연구원 | Phosphor including aluminium sulfide and the preparation thereof |
| JP2005302693A (en) * | 2004-03-19 | 2005-10-27 | Fuji Photo Film Co Ltd | Electroluminescence device |
-
1987
- 1987-03-06 JP JP62052727A patent/JPS63218194A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996015648A1 (en) * | 1994-11-14 | 1996-05-23 | Mitsui Mining & Smelting Co., Ltd. | Thin-film electroluminescent element |
| KR100430565B1 (en) * | 2001-05-31 | 2004-05-10 | 한국전자통신연구원 | Phosphor including aluminium sulfide and the preparation thereof |
| JP2005302693A (en) * | 2004-03-19 | 2005-10-27 | Fuji Photo Film Co Ltd | Electroluminescence device |
| US7816862B2 (en) | 2004-03-19 | 2010-10-19 | Fujifilm Corporation | Electroluminescent device with enhanced color rendition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0459759B2 (en) | 1992-09-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |