JPS63217302A - Multlayered optical element - Google Patents
Multlayered optical elementInfo
- Publication number
- JPS63217302A JPS63217302A JP62051257A JP5125787A JPS63217302A JP S63217302 A JPS63217302 A JP S63217302A JP 62051257 A JP62051257 A JP 62051257A JP 5125787 A JP5125787 A JP 5125787A JP S63217302 A JPS63217302 A JP S63217302A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- optical element
- vapor deposition
- skin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 238000010894 electron beam technology Methods 0.000 claims abstract description 15
- 238000007740 vapor deposition Methods 0.000 claims abstract description 9
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 8
- 229920003002 synthetic resin Polymers 0.000 claims description 9
- 239000000057 synthetic resin Substances 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 229920005553 polystyrene-acrylate Polymers 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 238000007738 vacuum evaporation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910003320 CeOx Inorganic materials 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
本発明は、スキン層を有する合成樹脂製基板上に光学薄
膜を形成してなる光学素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical element formed by forming an optical thin film on a synthetic resin substrate having a skin layer.
光学薄膜は機能面から分類すると、反射防止膜、反射増
加膜、反射膜、フィルター、偏光フィルター、位相板な
どに分類され、その多くは光学理論に基づいて構造設計
される。設計により、単層膜の場合と多層膜の場合があ
る。Optical thin films are categorized from a functional standpoint into antireflection films, reflection increasing films, reflective films, filters, polarizing filters, phase plates, etc., and most of them are structurally designed based on optical theory. Depending on the design, it may be a single layer film or a multilayer film.
他方、光学薄膜の構成物質としては、５ｉＯ１Ｓ ｉｏ
、 、Ｚｒ０ｚ 、ＭｇＦ、 、Ｔｉｅ、 、ＣｅＯ，
、ＺｎＳ、Ａｊ！、０３、ＺｎＯｌＭｇＯなどの誘電体
、Ａｉ！、Ａｇ、Ａｕ、Ｇｅなどの金属又は半金属が使
用される。On the other hand, as a constituent material of the optical thin film, 5iO1S io
, ,Zr0z,MgF, ,Tie, ,CeO,
, ZnS, Aj! , 03, dielectric materials such as ZnOlMgO, Ai! , Ag, Au, Ge, or other metals or metalloids are used.
そして光学薄膜は、一般に０．０１〜１０μｍと薄いた
めに、一般には真空蒸着、スパッタリング、イオンブレ
ーティングなどで形成される。真空蒸着の場合、蒸着源
を加熱する手段として、抵抗加熱と電子ビーム加熱の２
種がある。抵抗加熱では融点の低い物質例えば５ｉＯｘ
（１≦ｘ＜２）Ｌ。Since the optical thin film is generally as thin as 0.01 to 10 μm, it is generally formed by vacuum evaporation, sputtering, ion blasting, or the like. In the case of vacuum evaporation, there are two methods of heating the evaporation source: resistance heating and electron beam heating.
There are seeds. In resistance heating, substances with low melting points such as 5iOx
(1≦x<2)L.
か蒸着できず、それに対して電子ビーム加熱では、融点
の高い物質、例えばＳｔＯ□、ＡｌｚＯｘ、ＺｒＯ，、
Ｔｉｅ、 、Ｗ、Ｍｏ、Ｔａでも蒸着できる。On the other hand, electron beam heating cannot deposit substances with high melting points, such as StO□, AlzOx, ZrO, etc.
Tie, , W, Mo, and Ta can also be deposited.
ところで、近年光学薄膜を形成する基板として従来のガ
ラスから軽くて強靭な合成樹脂例えばポリカーボネート
（ｐｃ）、ポリスチレン（ＰＳ）、ポリメチルメタクリ
レート（ＰＭＭＡ）に変わりつつある。ここでいう「基
板」とは、単なる平板にとどまらず、それ自体、レンズ
、プリズム、反射基板等の光学素子であってもよい。そ
して、特定の形状を有する合成樹脂製光学素子は、合成
樹脂の特徴として、注形、射出成形、押し出し成形、カ
レンダー成形、プレス成形などの成形方法で製造され、
製造と同時に最終形状が得られる。Incidentally, in recent years, as substrates on which optical thin films are formed, conventional glass has been replaced by lightweight and strong synthetic resins such as polycarbonate (PC), polystyrene (PS), and polymethyl methacrylate (PMMA). The "substrate" herein is not limited to a simple flat plate, but may also be an optical element such as a lens, a prism, or a reflective substrate. A synthetic resin optical element having a specific shape is manufactured by a molding method such as casting, injection molding, extrusion molding, calendar molding, press molding, etc. as a characteristic of the synthetic resin.
The final shape is obtained at the same time as manufacturing.
〔発明が解決しようとする問題点］
ところが、合成樹脂製基板に電子ビーム加熱による蒸着
で光学薄膜を形成すると、光学薄膜がその後基板表面層
と共に剥離することがあるという問題点があった。[Problems to be Solved by the Invention] However, when an optical thin film is formed on a synthetic resin substrate by vapor deposition using electron beam heating, there is a problem in that the optical thin film may subsequently peel off together with the substrate surface layer.
本発明者らは、かかる問題点の解決のため鋭意研究の結
果、問題点の生じるのは、基板表面層に内部とは密度又
は結晶化度の異なる異質層（スキン層と呼ばれ、数μｍ
の厚さがある）の形成された合成樹脂製基板を使用した
場合に限られることを突き止めた。The inventors of the present invention have conducted extensive research to solve these problems, and have found that the problem arises because the substrate surface layer has a heterogeneous layer (called a skin layer, with a density or crystallinity of several μm) that differs from the inside.
It has been found that this is limited to cases where a synthetic resin substrate with a thickness of
そして更に研究を進めた結果、かかるスキン層を有する
基板であっても基板上に予め抵抗加熱により無機酸化物
例えばＳ ｉｏｘ薄膜を形成しておけば、その後電子ビ
ーム加熱蒸着で光学薄膜を形成しても前記問題点が生じ
ないことを見い出し、本発明を成すに至った。As a result of further research, we found that even if a substrate has such a skin layer, if an inorganic oxide such as Siox thin film is formed on the substrate by resistance heating in advance, then an optical thin film can be formed by electron beam heating evaporation. The inventors have found that the above-mentioned problems do not occur even if the above-mentioned method is used, and have accomplished the present invention.
従って、本発明は、［内部とは密度又は結晶化度の異な
るスキン層を有する合成樹脂製基板上に、電子ビーム加
熱蒸着により光学薄膜を形成してなる光学素子に於いて
、前記基板と前記光学薄膜との間に、中間層として抵抗
加熱蒸着により無機酸化物好ましくは５ｉＯｘ（１≦ｘ
く２）の薄膜を形成したことを特徴とする光学素子」を
提供する。Therefore, the present invention provides an optical element in which an optical thin film is formed by electron beam heating evaporation on a synthetic resin substrate having a skin layer having a density or crystallinity different from that of the inside, An inorganic oxide, preferably 5iOx (1≦x
(2) An optical element characterized by forming the thin film of (2) above.
Ｓ ｉｏｘ （１＜ｘ＜２）は、蒸着源としてＳｉＯを
用い、少量の酸素ガスを導入した低真空中（真空度８
Ｘ １０−’〜６ Ｘ １０−’Ｔｏｒｒ程度）で真空
蒸着することにより形成され、幸いなことに透明で１．
４５〜１．９０の屈折率ｎｄを有するので光学薄膜の機
能に影響を与えないようにすることもできる。しかし、
この５ｔｙｘを積極的に多層光学薄膜の一部と兼用させ
てもよい。Ｓ ｉｏｘ （１＜ｘ〈２）薄膜は薄膜故に
Ｘの特定は難しいが、Ｘ＝１．３〜１．９と思われる。Siox (1<x<2) uses SiO as a deposition source in a low vacuum (vacuum degree 8) with a small amount of oxygen gas introduced.
It is formed by vacuum evaporation at a temperature of about 1.5 x 10-' to 6.
Since it has a refractive index nd of 45 to 1.90, it can also be prevented from affecting the function of the optical thin film. but,
This 5tyx may also be actively used as a part of the multilayer optical thin film. Siox (1<x<2) Although it is difficult to specify X because the thin film is a thin film, it is thought that X=1.3 to 1.9.
しかし、本発明ではＳｉＯを中間層として使用してもよ
く、その場合には酸素ガスを導入せずに真空蒸着を行な
う。光学薄膜の一部と兼用させずに単に中間層としてな
らば、５ｉＯｘ（１≦ｘ〈２）膜厚は一般に０．００５
〜１０μｍ程度でよい。０．０１μｍ以上特に０゜０５
μｍ以上の膜厚があれば、スキン層と共に基板から剥離
する問題は心配ない。However, in the present invention, SiO may be used as the intermediate layer, in which case vacuum deposition is performed without introducing oxygen gas. If it is simply used as an intermediate layer without also serving as a part of the optical thin film, the film thickness of 5iOx (1≦x<2) is generally 0.005
It may be about 10 μm. 0.01μm or more especially 0゜05
If the film has a thickness of μm or more, there is no need to worry about the problem of peeling off from the substrate together with the skin layer.
５ｉＯｘ（１≦Ｘ〈２）の薄膜（中間層）の上に、光学
薄膜が電子ビーム加熱で蒸着される。電子ビーム加熱に
よる蒸着膜は、ち密なため耐擦傷性に優れる。An optical thin film is deposited on the thin film (intermediate layer) of 5iOx (1≦X<2) by electron beam heating. The film deposited by electron beam heating is dense and has excellent scratch resistance.
以下、実施例によって本発明を説明するが、本発明はこ
れに限定されるものではない。The present invention will be explained below with reference to Examples, but the present invention is not limited thereto.
〔実施例１〕
真空チャンバー内にスキン層を有するＰＭＭＡ基板と蒸
着源としてＳｉＯをセットし、５×１０− ”Ｔｏｒｒ
まで排気した。酸素を導入して２Ｘ１０−’Ｔｏｒｒに
した後、抵抗加熱によってＳｉＯを飛ばして０．０５μ
ｍ蒸着し、第１層５ｆｏｘ （１＜ｘ＜２）を形成した
。次に酸素導入をやめチャンバーを３ Ｘ １０−ｈＴ
ｏｒｒまで排気して、電子ビーム法にて、ＺｒＯ，を０
．２μｍ、その上にＳｉｎ、を０゜２μ涌蒸着すること
により２層反射防止膜を形成した。[Example 1] A PMMA substrate having a skin layer and SiO as an evaporation source were set in a vacuum chamber, and the pressure was set at 5×10-” Torr.
Exhausted until. After introducing oxygen to 2X10-'Torr, SiO is blown off by resistance heating to 0.05μ
m vapor deposition to form a first layer 5fox (1<x<2). Next, stop introducing oxygen and change the chamber to 3 x 10-hT.
Evacuate to orr and remove ZrO to 0 using electron beam method.
．． A two-layer antireflection film was formed by vapor-depositing 2 μm of Sin at 0° and 2 μm thereon.
〔実施例２〕
実施例１と同様にスキン層を有するＰＳ基板に抵抗加熱
法にてＳ ｉｏｘ （１＜ｘ＜２）を蒸着後、酸素導入
をやめ、チャンバー内を５ Ｘ １０−”Ｔｏｒｒまで
排気して、電子ビーム法にてＡｚｚ ０３を０゜２μｎ
＋、ＺｒＯ，を０．２μｍ、ＳｉＯ，を０．１ ｕ−そ
れぞれ順に蒸着することにより３層反射防止膜を形成し
た。[Example 2] As in Example 1, after depositing Siox (1<x<2) on a PS substrate having a skin layer using a resistance heating method, oxygen introduction was stopped and the inside of the chamber was heated to 5 x 10-” Torr. Azz 03 was evacuated to 0°2 μn using the electron beam method.
A three-layer antireflection film was formed by sequentially depositing 0.2 μm of ZrO, 0.1 μm of SiO, and 0.1 μm of ZrO.
〔実施例３〕
実施例１と同様にスキン層を有するＰＣ基板に抵抗加熱
法にてＳ ｉｏｘ （１＜ｘ＜２）を蒸着後、酸素導入
をやめ、チャンバー内を３ Ｘ １０−”Ｔｏｒｒまで
排気後、電子ビーム法にて順にＴｉｅ、を０゜２μｔａ
−、Ｓ Ｚ Ｏｚを０．ｌ＃ｓ、ＺｒＯ，を０．２μ
ｍ、５１０ｇを０．１μ−それぞれ蒸着することにより
４層反射防止膜を形成した。[Example 3] After depositing Siox (1<x<2) on a PC board having a skin layer using a resistance heating method in the same manner as in Example 1, oxygen introduction was stopped and the inside of the chamber was heated to 3×10-” Torr. After evacuation to
-, S Z Oz is 0. l#s, ZrO, 0.2μ
A four-layer anti-reflection film was formed by depositing 0.1 μm of 510 g of 4-layer anti-reflection film.
〔比較例１〕
実施例１と同様にＰＭＭＡ基板にここでは直接に電子ビ
ーム法にてＺｒＯ，を０．２μｍ、ＳｉＯ２を０．２μ
ｓ積層した。。[Comparative Example 1] As in Example 1, a 0.2 μm thick layer of ZrO and a 0.2 μm thick layer of SiO2 were directly deposited on a PMMA substrate using the electron beam method.
s laminated. .
〔比較例２〕
実施例２と同様にＰＳ基板にここでは直接に電子ビーム
法にてＡｆｆｉ、 Ｏ，を０．２μｍ、ＺｒＯ。[Comparative Example 2] As in Example 2, Affi, O, and ZrO were directly applied to the PS substrate to a thickness of 0.2 μm using the electron beam method.
を０．２μ園、ｓｔｏｗを０．１μ−積層した。A layer of 0.2 μm was layered, and a layer of 0.1 μm of stow was layered.
〔比較例３〕
実施例３と同様にＰＣ基板にここでは直接に電子ビーム
法にてＴｉｏｔを０．２μ鴎、Ｓｉｎ、を０．１μｓ、
Ｚｒ０＝を０．２μｓ＋、５ｉＯ１を０．１μｓ蒸着し
た。[Comparative Example 3] Similar to Example 3, Tiot was applied directly to the PC board using the electron beam method for 0.2 μs, and Sin was applied for 0.1 μs.
Zr0 was deposited for 0.2 μs+, and 5iO1 was deposited for 0.1 μs.
以上、実施例１〜３、比較例１〜３の光学素子について
次のような試験を行なった。この結果を第１表に示す。As described above, the following tests were conducted on the optical elements of Examples 1 to 3 and Comparative Examples 1 to 3. The results are shown in Table 1.
〔試験例１〕
薄膜表面にセロハンテープを貼り、思い切り剥して薄膜
の密着性を調べた。[Test Example 1] Cellophane tape was applied to the surface of the thin film, and the adhesiveness of the thin film was examined by peeling it off.
〔試験例２〕
薄膜表面をスチールウール（＃０Ｏ００）で荷重２００
ｇｆの負荷をかけながら３０回擦った。[Test Example 2] Apply a load of 200 to the surface of the thin film using steel wool (#0O00).
I rubbed it 30 times while applying a load of gf.
尚、実施例ではＳ ｉｏｘを使用したが、ＴｉＯｘ （
１＜ｘ＜２）やＣｅＯｘ （１＜ｘ≦２）も使用し得る
。Although Siox was used in the example, TiOx (
1<x<2) or CeOx (1<x≦2) may also be used.
以上の通り、スキン層を有する合成樹脂基板であっても
、本発明に従い基板上に抵抗加熱蒸着により無機酸化物
薄膜特にＳｉＯｘ （１≦ｘ〈２）薄膜を設けることに
より、その上に電子ビーム蒸着に種々の光学薄膜を形成
しても、光学薄膜がスキン層と共に基板から剥離する問
題が解消される。As described above, even if the synthetic resin substrate has a skin layer, by providing an inorganic oxide thin film, particularly a SiOx (1≦x<2) thin film, on the substrate by resistance heating vapor deposition according to the present invention, electron beams can be applied on the substrate. Even if various optical thin films are formed by vapor deposition, the problem of the optical thin film peeling off from the substrate together with the skin layer is solved.
また、ＳｉＯｘは帯電防止効果もあり、耐擦傷性にも優
れる。Furthermore, SiOx has an antistatic effect and is also excellent in scratch resistance.
Claims (1)
る合成樹脂製基板上に、電子ビーム加熱蒸着により光学
薄膜を形成してなる光学素子に於いて、 前記基板と前記光学薄膜との間に、抵抗加熱蒸着により
無機酸化物薄膜を形成したことを特徴とする光学素子。 ２ 前記無機酸化物がＳｉＯ＿ｘ（１≦ｘ＜２）である
ことを特徴とする特許請求の範囲第１項記載の光学素子
。 ３ 前記ＳｉＯ＿ｘ薄膜の膜厚が０．００５〜１０μｍ
であることを特徴とする特許請求の範囲第２項記載の光
学素子。 ４ 前記基板がポリカーボネート、ポリスチレンまたは
ポリメチルメタクリレートであることを特徴とする特許
請求の範囲第１項記載の光学素子。[Scope of Claims] 1. An optical element in which an optical thin film is formed by electron beam heating evaporation on a synthetic resin substrate having a skin layer having a different density or crystallinity from the inside, comprising: An optical element characterized in that an inorganic oxide thin film is formed between an optical thin film and an inorganic oxide thin film by resistance heating vapor deposition. 2. The optical element according to claim 1, wherein the inorganic oxide is SiO_x (1≦x<2). 3 The thickness of the SiO_x thin film is 0.005 to 10 μm
The optical element according to claim 2, characterized in that: 4. The optical element according to claim 1, wherein the substrate is polycarbonate, polystyrene, or polymethyl methacrylate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62051257A JPS63217302A (en) | 1987-03-06 | 1987-03-06 | Multlayered optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62051257A JPS63217302A (en) | 1987-03-06 | 1987-03-06 | Multlayered optical element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63217302A true JPS63217302A (en) | 1988-09-09 |
Family
ID=12881892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62051257A Pending JPS63217302A (en) | 1987-03-06 | 1987-03-06 | Multlayered optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63217302A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998052074A1 (en) * | 1997-05-16 | 1998-11-19 | Hoya Kabushiki Kaisha | Plastic optical component having a reflection prevention film and mechanism for making reflection prevention film thickness uniform |
-
1987
- 1987-03-06 JP JP62051257A patent/JPS63217302A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998052074A1 (en) * | 1997-05-16 | 1998-11-19 | Hoya Kabushiki Kaisha | Plastic optical component having a reflection prevention film and mechanism for making reflection prevention film thickness uniform |
| US6250758B1 (en) | 1997-05-16 | 2001-06-26 | Hoya Corporation | Plastic optical devices having antireflection film and mechanism for equalizing thickness of antireflection film |
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