JPS63213974A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPS63213974A JPS63213974A JP62048111A JP4811187A JPS63213974A JP S63213974 A JPS63213974 A JP S63213974A JP 62048111 A JP62048111 A JP 62048111A JP 4811187 A JP4811187 A JP 4811187A JP S63213974 A JPS63213974 A JP S63213974A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photovoltaic device
- resin
- type
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 230000005855 radiation Effects 0.000 claims abstract description 3
- 238000010304 firing Methods 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 abstract description 15
- 239000011347 resin Substances 0.000 abstract description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 11
- 239000004332 silver Substances 0.000 abstract description 11
- 239000011230 binding agent Substances 0.000 abstract description 9
- 238000005476 soldering Methods 0.000 abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 230000007774 longterm Effects 0.000 abstract description 5
- 239000004593 Epoxy Substances 0.000 abstract description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000003822 epoxy resin Substances 0.000 abstract description 2
- 229920000647 polyepoxide Polymers 0.000 abstract description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 abstract description 2
- 229920002554 vinyl polymer Polymers 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、■−■族化合物半導体を用いた光起電力装置
の製造方法、とくにその電極および電極形成手法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a photovoltaic device using a ■-■ group compound semiconductor, and in particular to an electrode thereof and a method for forming the electrode.
従来の技術
ｆｆ−Ｖｌ族化合物は、有力な半導体材料の１つであり
、現在では、太陽電池用として、ＣｄＳとＣｃｉＴ ｅ
との接合の光起電力効果を利用したものが多く取り上げ
られている。Ｉ［−Ｍ族化合物を用いて光起電力素子を
作成する際、半導体膜から電極を取り出す必要がある。Conventional technologyFF-Vl group compounds are one of the leading semiconductor materials, and currently CdS and CciT e are used for solar cells.
There are many examples that utilize the photovoltaic effect of bonding with. When creating a photovoltaic device using an I[-M group compound, it is necessary to take out an electrode from a semiconductor film.
従来は、Ａｑ粉末にＩｎ又はＳｎを３０〜５０％添加し
たものに、アクリル、フェノール、エポキシ等の樹脂バ
インダーを加え、溶剤とともに十分混合したものを、素
子半導体１漠上にスクリーン印刷を行い、輻射熱方式の
ベルト焼成炉により、１５０〜２ｏｏ℃で約１時間焼成
を行うことによシミ極形成を行ってきた。Conventionally, 30 to 50% of In or Sn was added to Aq powder, a resin binder such as acrylic, phenol, or epoxy was added, and the mixture was thoroughly mixed with a solvent and screen printed on a semiconductor element. The stain electrode was formed by firing at 150 to 20° C. for about 1 hour using a radiant heat type belt firing furnace.
発明が解決しようとする問題点
しかし■−■族化合物半導体膜とオーミック接触を得、
かつ光電特性に悪影響を与えない電極／ＣｄＳ膜間の接
触抵抗値３ｏΩ／ａｄを得るためには、Ｉｎ＋５ｎ（Ｉ
ｎ：５ｎ＝１ ：１ ）の添加率をＡｑペーストの総重
量忙対し、３０〜５０％にする必要があった。一般の銀
ペーストには、導電性を得るために、銀成分が８０〜８
６％含有されており、上記Ｉｎ＋Ｓｎの添加物を３０〜
６０％添加する事により、銀ペースト中の金属成分の含
有率が８５〜９０％となり、樹脂バインダーの含有率が
下がる。この様にして作成した銀ペーストを用いて電極
を形成すると、樹脂成分が１０〜１５係であるため、電
極自体の機械的強度も低く、特に高温高湿雰囲気下では
、長期信頼性が低かった。Problems to be solved by the inventionHowever, it is difficult to obtain ohmic contact with the ■-■ group compound semiconductor film,
In order to obtain a contact resistance value of 3 oΩ/ad between the electrode and the CdS film that does not adversely affect the photoelectric properties, In+5n (I
It was necessary to set the addition ratio of n:5n=1:1) to 30 to 50% based on the total weight of the Aq paste. General silver paste has a silver content of 80 to 8 to obtain conductivity.
It contains 6% of the above In+Sn additives.
By adding 60%, the content of the metal component in the silver paste becomes 85 to 90%, and the content of the resin binder decreases. When an electrode is formed using the silver paste prepared in this way, the mechanical strength of the electrode itself is low because the resin component is 10-15%, and the long-term reliability is low, especially in a high-temperature and high-humidity atmosphere. .
また、電極部から半田付によりリード線を取り付ける際
、Ｉｎが半田とＡ９との溶融をさまたげるため、Ｉｎ含
有量がＡｑペーストに対し、Ｓ係を越えると半田付か不
可能となった。しかしながら、従来の電極では、Ａｑペ
ースト中のＩｎ添加量が１５〜２０％であるため、半田
による電極−＼のリード線取付けは不可能であり、太陽
電池素子を商品化する上で大きな問題点となっていた。Furthermore, when attaching a lead wire from the electrode part by soldering, since In hinders the melting of the solder and A9, soldering becomes impossible when the In content exceeds the S ratio with respect to the Aq paste. However, in conventional electrodes, since the amount of In added in the Aq paste is 15 to 20%, it is impossible to attach the electrode lead wires by soldering, which is a major problem in commercializing solar cell elements. It became.
問題点を解決するための手段
本発明は、上記問題点を解決すべく、電極導電膜の形成
を光焼成で行うものである。Means for Solving the Problems In the present invention, in order to solve the above problems, the electrode conductive film is formed by photo-baking.
作 用
これにより銀ペースト中のＩｎ、Ｓｎ添加量を減らし、
電極部の機械的強度、長期信頼性を向上させ、半田付に
よるリード取り出しを可能にするとともＫ、焼成時間を
大幅に低減することができる。Effect: This reduces the amount of In and Sn added in the silver paste,
It improves the mechanical strength and long-term reliability of the electrode part, makes it possible to take out the leads by soldering, and significantly reduces the firing time.
実施例 以下、本発明を実施例により詳述する。Example Hereinafter, the present invention will be explained in detail with reference to Examples.
本実施例の光起電力素子の断面図を第１図に示した。第
１図に示すように、ガラス基板１上にｎ型ＣｄＳ焼結膜
２を形成し、その上にＣｄＴｅ焼結膜３を形成する。Ｃ
ｄＴｅ膜３上に適量のアクセプタ不純物を添加したカー
ボン膜４を印刷、焼成し、カーホン膜４中に含１れるア
クセプタ不純物１ｃｄＴｅ膜３中にドープすることによ
り、ｐ型ＣｄＴｅ膜３を形成した。このようにしてｎ型
ＣｄＳ焼結・膜２とｐ型焼結膜３との間に光起電力効果
をもつヘテコ接合を形成する。次にＣｄＳ焼結膜２上お
よびカーボン膜４上に、Ａｇ：Ｉｎ：Ｓｎ：エボキシ樹
脂バインダー：１５８：１ ：１ ：４０の比で混合し
た銀ペーストを印刷する。ついで１〜６０μの波長の光
を主として発生する遠赤外線放射発熱体を用いた遠赤外
高速焼成炉によシ、１５０℃〜２５０℃の範ｊ囲の焼成
温度で１０分間焼成する。ここで用いた銀ペーストは、
樹脂をバインダーとして含んでおり、樹脂の吸収波長域
は一般に６〜１６μの範囲にある。電極ペーストとして
用いる樹脂は、フェノール、アクリル、エポキシ、ビニ
ル系のものを選択する。これらの樹脂分子の双極子モー
メントは一般に高いため、遠赤外線を銀ペースト印刷部
に照射すると、分子振動により、電極内部の樹脂バイン
ダーの温度が急激に上昇する。A cross-sectional view of the photovoltaic device of this example is shown in FIG. As shown in FIG. 1, an n-type CdS sintered film 2 is formed on a glass substrate 1, and a CdTe sintered film 3 is formed thereon. C
A carbon film 4 doped with an appropriate amount of acceptor impurities was printed and fired on the dTe film 3, and the acceptor impurity 1 contained in the carbon film 4 was doped into the cdTe film 3, thereby forming a p-type CdTe film 3. In this way, a heterojunction having a photovoltaic effect is formed between the n-type CdS sintered film 2 and the p-type sintered film 3. Next, on the CdS sintered film 2 and the carbon film 4, a silver paste mixed in a ratio of Ag:In:Sn:epoxy resin binder: 158:1:1:40 is printed. Then, it is fired for 10 minutes at a firing temperature in the range of 150°C to 250°C in a far-infrared high-speed firing furnace using a far-infrared radiation heating element that mainly emits light with a wavelength of 1 to 60μ. The silver paste used here is
It contains a resin as a binder, and the absorption wavelength range of the resin is generally in the range of 6 to 16μ. The resin used as the electrode paste is selected from phenol, acrylic, epoxy, and vinyl resins. Since the dipole moment of these resin molecules is generally high, when far infrared rays are irradiated onto the silver paste printed area, the temperature of the resin binder inside the electrode rises rapidly due to molecular vibration.
従来の対流式電熱炉では、対流により熱が伝わり、電極
表面部より温度が上がシ、電極部６とＣｄＳ膜２との界
面は温度上昇が遅れる傾向があったが、遠赤外線焼成炉
においては、電極内部より温度が上昇するため、電極部
６とＣｄＳ膜２との界面付近に存在するＩｎ、Ｓｎは、
焼成早期から溶融活性化される。このため、焼成により
樹脂バインダーが硬化する前に、遠赤外焼成では、Ｉｎ
、Ｓｎが溶融活性化するため、ＣｄＳ膜２中２中Ｉｎ、
Ｓｎの拡散量及び速度が増大する。In conventional convection electric heating furnaces, heat is transferred by convection, and the temperature tends to rise above the electrode surface, and the temperature rise at the interface between the electrode part 6 and the CdS film 2 tends to be delayed, but in a far-infrared firing furnace, Since the temperature rises from inside the electrode, In and Sn existing near the interface between the electrode part 6 and the CdS film 2 are
Melting is activated from the early stage of firing. For this reason, in far-infrared firing, before the resin binder is hardened by firing, In
, Sn is melted and activated, so In in the CdS film 2,
The amount and speed of Sn diffusion increases.
第２図に、焼成方法の違いによる電極／ＣｄＳ膜間の接
触抵抗の変化を示す。図中１は、従来の対流式電熱炉で
焼成した場合の接触抵抗、２は遠赤外線焼成炉で焼成し
た場合の接触抵抗を示す。FIG. 2 shows the change in contact resistance between the electrode and the CdS film due to different firing methods. In the figure, 1 shows the contact resistance when fired in a conventional convection electric heating furnace, and 2 shows the contact resistance when fired in a far-infrared firing furnace.
縦軸は電極ｅ／ａｃｔｓ膜２間の接触抵抗、横軸は銀ペ
ースト全体に対する（ Ｉ ｎ＋Ｓｎ ）の添加量百分
率全庁す。ここで、ＩｎとＳｎの重量比率はに１である
。第２図に示す様に、遠赤外線処理を行えば、（Ｉｎ＋
Ｓｎ）添加率が１係でも、従来方法の（Ｉｎ＋５ｎ）３
０％添加のものと、電極ｓ／ＣｄＳ膜２接触低２接触抵
抗等であるという結果が得られた。The vertical axis represents the contact resistance between the electrode e/acts film 2, and the horizontal axis represents the percentage of the addition amount of (In+Sn) to the entire silver paste. Here, the weight ratio of In and Sn is 1. As shown in Figure 2, if far infrared processing is performed, (In+
Even if the Sn) addition rate is 1 factor, the conventional method (In+5n)3
Results were obtained that the electrode s/CdS film 2 contact had a low 2 contact resistance, etc. compared to the one with 0% addition.
電極部６，６へのリード線取付けは、（Ｉ ｎ＋ｓｎ）
添加の重量百分率が６％以下であれば、半田付によるリ
ード線取り付けが可能であり、本実施例で形成した電極
部は、リード半田取り付は後の垂直引張り強度で０．５
〜１．ｏＫｑｒ／−と非常に高い値が得られる。To attach the lead wires to the electrode parts 6, 6, (I n+sn)
If the weight percentage of addition is 6% or less, lead wire attachment by soldering is possible, and the electrode portion formed in this example has a vertical tensile strength of 0.5 after lead soldering.
~1. A very high value of oKqr/- is obtained.
また、高温高湿下での長期信頼性も向上し、６０１：、
９５％ＲＨ条件下で、２０００時間経過後、電極部の劣
化に起因する素子の性能変化は全く認められなかった。In addition, long-term reliability under high temperature and high humidity has also been improved.
After 2000 hours under 95% RH conditions, no change in performance of the device due to deterioration of the electrode portion was observed.
発明の効果
以上の様に本発明によれば次の効果を得ることができる
。Effects of the Invention As described above, according to the present invention, the following effects can be obtained.
（１）ＩＩ−’Ａ族半導体膜と電極膜との間のオーミ７
り性がよりなり、Ｉｎ、Ｓｎ添加量が従来の１Ｑ分の１
以下となった。(1) Ohmi 7 between II-'A group semiconductor film and electrode film
It has better resilience, and the amount of In and Sn added is 1/1/1 of the conventional amount.
It became the following.
（２） 半田付によるリード取出しが可能となった。(2) It is now possible to take out the leads by soldering.
（３）電極形成時間が短縮された。(3) Electrode formation time was shortened.
（４） Ｉ ｎ 、 Ｓ ｎ添加量の減少にともない
、樹脂バインダー含有量が増え、特に高温高湿下での長
期信頼性が向上した。(4) As the added amounts of In and Sn were reduced, the content of the resin binder was increased, and the long-term reliability was improved, especially under high temperature and high humidity conditions.
第１図は本発明による光起電力素子の断面図、第２図は
本発明によって形成した電極と、従来法により形成した
電極の、ＣｄＳ膜との接触抵抗比較図である。
１・・・・・・ガラス基板、２・・・・・・ＣｄＳ焼結
膜、３・・・・・・ＣｄＴｅ焼結膜、４・・・・・・カ
ーボン膜、５・・・・・・陽極電極、６・・・・・・陰
極電極。FIG. 1 is a cross-sectional view of a photovoltaic device according to the present invention, and FIG. 2 is a comparison diagram of contact resistance between an electrode formed according to the present invention and an electrode formed by a conventional method with a CdS film. 1... Glass substrate, 2... CdS sintered film, 3... CdTe sintered film, 4... Carbon film, 5... Anode Electrode, 6... cathode electrode.
Claims (7)
成において、電極導電膜を光焼成により形成することを
特徴とした光起電力装置の製造方法。(1) A method for manufacturing a photovoltaic device, characterized in that in forming electrodes of a photoelectric device using a II-VI group compound semiconductor, an electrode conductive film is formed by photo-baking.
λ≦５０μである遠赤外領域の光を主として用いること
を特徴とする特許請求の範囲第１項記載の光起電力装置
の製造方法。(2) The range of the wavelength λ of the irradiated light in photobaking is 1μ≦
The method for manufacturing a photovoltaic device according to claim 1, characterized in that light in the far infrared region where λ≦50μ is mainly used.
℃であることを特徴とする特許請求の範囲第１項記載の
光起電力装置の製造方法。(3) The firing temperature T of the electrode conductive film is 150°C≦T≦250
The method for manufacturing a photovoltaic device according to claim 1, wherein the temperature is .degree.
ｐ型ＣｄＴｅ膜と、ｎ型ＣｄＳもしくは、それを含む化
合物半導体からなるｎ形膜とのヘテロ接合による光起電
性を用いた素子であることを特徴とする特許請求の範囲
第１項記載の光起電力装置の製造方法。(4) A photovoltaic device using a II-VI group compound semiconductor,
Claim 1, characterized in that the device uses photovoltaic properties due to a heterojunction of a p-type CdTe film and an n-type film made of n-type CdS or a compound semiconductor containing the same. Method of manufacturing a photovoltaic device.
を含む化合物から成ることを特徴とする特許請求の範囲
第１項記載の光起電力装置の製造方法。(5) The method for manufacturing a photovoltaic device according to claim 1, wherein the electrode conductive film is made of Ag, In, Sn, or a compound containing them.
を含む金属化合物と有機物質との混合物から成ることを
特徴とする特許請求の範囲第１項記載の光起電力装置の
製造方法。(6) The method for manufacturing a photovoltaic device according to claim 1, wherein the electrode conductive film is made of a mixture of Ag, In, Sn, or a metal compound containing these and an organic substance.
熱体を用いることを特徴とする特許請求の範囲第１項記
載の光起電力装置の製造方法。(7) A method for manufacturing a photovoltaic device according to claim 1, characterized in that a far-infrared radiation heating element is used as a light generation source in the photo-baking.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62048111A JPS63213974A (en) | 1987-03-03 | 1987-03-03 | Manufacture of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62048111A JPS63213974A (en) | 1987-03-03 | 1987-03-03 | Manufacture of photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63213974A true JPS63213974A (en) | 1988-09-06 |
Family
ID=12794202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62048111A Pending JPS63213974A (en) | 1987-03-03 | 1987-03-03 | Manufacture of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63213974A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02117177A (en) * | 1988-10-26 | 1990-05-01 | Fuji Electric Co Ltd | Thin film optoelectric transducer |
| JP2744847B2 (en) * | 1991-06-11 | 1998-04-28 | エイエスイー・アメリカス・インコーポレーテッド | Improved solar cell and method for manufacturing the same |
| EP0744779A3 (en) * | 1995-05-17 | 1998-10-21 | Matsushita Battery Industrial Co Ltd | A manufacturing method of compound semiconductor thinfilms and photoelectric device or solar cell using the same compound semiconductor thinfilms |
| JP2002373995A (en) * | 2001-06-15 | 2002-12-26 | Honda Motor Co Ltd | Manufacturing method for solar cell |
| JP2008135416A (en) * | 2005-11-11 | 2008-06-12 | Mitsubishi Materials Corp | Composition for forming electrode in solar cell, method of forming electrode, and solar cell using electrode obtained by the same |
| US8758891B2 (en) | 2007-04-19 | 2014-06-24 | Mitsubishi Materials Corporation | Conductive reflective film and production method thereof |
| US8816193B2 (en) | 2006-06-30 | 2014-08-26 | Mitsubishi Materials Corporation | Composition for manufacturing electrode of solar cell, method of manufacturing same electrode, and solar cell using electrode obtained by same method |
| US8822814B2 (en) | 2006-10-11 | 2014-09-02 | Mitsubishi Materials Corporation | Composition for electrode formation and method for forming electrode by using the composition |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115359A (en) * | 1979-02-27 | 1980-09-05 | Agency Of Ind Science & Technol | Electrode material for group 2-6 compound semiconductor |
| JPS55117287A (en) * | 1979-03-02 | 1980-09-09 | Agency Of Ind Science & Technol | Photovoltaic element and fabricating the same |
| JPS5996798A (en) * | 1982-11-03 | 1984-06-04 | レイデイアント・テクノロジ−・コ−ポレイシヨン | Method of producing multilayer thick film circuit |
| JPS61124084A (en) * | 1984-11-20 | 1986-06-11 | 松下電器産業株式会社 | Continuous heater |
-
1987
- 1987-03-03 JP JP62048111A patent/JPS63213974A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115359A (en) * | 1979-02-27 | 1980-09-05 | Agency Of Ind Science & Technol | Electrode material for group 2-6 compound semiconductor |
| JPS55117287A (en) * | 1979-03-02 | 1980-09-09 | Agency Of Ind Science & Technol | Photovoltaic element and fabricating the same |
| JPS5996798A (en) * | 1982-11-03 | 1984-06-04 | レイデイアント・テクノロジ−・コ−ポレイシヨン | Method of producing multilayer thick film circuit |
| JPS61124084A (en) * | 1984-11-20 | 1986-06-11 | 松下電器産業株式会社 | Continuous heater |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02117177A (en) * | 1988-10-26 | 1990-05-01 | Fuji Electric Co Ltd | Thin film optoelectric transducer |
| JP2744847B2 (en) * | 1991-06-11 | 1998-04-28 | エイエスイー・アメリカス・インコーポレーテッド | Improved solar cell and method for manufacturing the same |
| EP0744779A3 (en) * | 1995-05-17 | 1998-10-21 | Matsushita Battery Industrial Co Ltd | A manufacturing method of compound semiconductor thinfilms and photoelectric device or solar cell using the same compound semiconductor thinfilms |
| JP2002373995A (en) * | 2001-06-15 | 2002-12-26 | Honda Motor Co Ltd | Manufacturing method for solar cell |
| JP2008135416A (en) * | 2005-11-11 | 2008-06-12 | Mitsubishi Materials Corp | Composition for forming electrode in solar cell, method of forming electrode, and solar cell using electrode obtained by the same |
| US8816193B2 (en) | 2006-06-30 | 2014-08-26 | Mitsubishi Materials Corporation | Composition for manufacturing electrode of solar cell, method of manufacturing same electrode, and solar cell using electrode obtained by same method |
| US9312404B2 (en) | 2006-06-30 | 2016-04-12 | Mitsubishi Materials Corporation | Composition for manufacturing electrode of solar cell, method of manufacturing same electrode, and solar cell using electrode obtained by same method |
| US9620668B2 (en) | 2006-06-30 | 2017-04-11 | Mitsubishi Materials Corporation | Composition for manufacturing electrode of solar cell, method of manufacturing same electrode, and solar cell using electrode obtained by same method |
| US8822814B2 (en) | 2006-10-11 | 2014-09-02 | Mitsubishi Materials Corporation | Composition for electrode formation and method for forming electrode by using the composition |
| US8758891B2 (en) | 2007-04-19 | 2014-06-24 | Mitsubishi Materials Corporation | Conductive reflective film and production method thereof |
| US10020409B2 (en) | 2007-04-19 | 2018-07-10 | Mitsubishi Materials Corporation | Method for producing a conductive reflective film |
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