JPS63208215A - Electron beam lithography equipment - Google Patents

Abstract

PURPOSE:To increase the quantity of lithographed objects processed in a unit period by making respective electron beam lithography system connectable to any one of a plurality of buffer memories. CONSTITUTION:Because the electron beam control signal generators 2a and 2b of a plurality of electron beam lithography systems A and B can be connected to any one of a plurality of buffer memories M1 M4, operations of lithographying different types of patterns in a plurality of respective element forming regions of respective lithographed objects 9a and 9b in a plurality of the electron beam lithography systems A and B can be performed continuously without creating a waiting time for transferring lithography data from a lithography data storage 1 to a plurality of the buffer memories M1-M4 by switching the connections of the electron beam control signal generators 2a and 2b to a plurality of the buffer memories M1 M4 so as not to compete against each other and, at the same time, by controlling the order of lithography of a plurality of the element forming regions in the lithographed objects 9a and 9b properly. With this constitution, the quantity of the lithographed objects subjected to an exposure process by electron beam lithography in a unit period can be increased.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to electron beam lithography technology, and in particular, in phosphorography in the manufacture of semiconductor devices, an electron beam sensitive resist coated on a semiconductor wafer or the like is exposed to an electron beam. The present invention relates to a technique that is effective when applied to electron beam exposure in which a predetermined figure is exposed by irradiation.

[Conventional technology]

Regarding electron beam lithography technology in the manufacture of semiconductor devices, etc., Kogyo Kenkyukai Co., Ltd., published on November 1981, [Electronic Materials J November 1981 issue, P110~
It is described on page 116.

By the way, in the phosphorography technology used in the manufacture of semiconductor devices, in order to cope with the miniaturization of semiconductor devices and the miniaturization of a wide variety of products, light is transmitted through an original plate such as a photomask to transfer a predetermined pattern onto a semiconductor wafer. Instead of exposure, exposure may be performed by directly drawing a predetermined figure on a semiconductor wafer coated with an electron beam-sensitive resist using an electron beam.

In this case, drawing data generated by an automatic design system based on the semiconductor integrated circuit structure formed on a semiconductor wafer is generally stored in a storage medium such as a large-capacity magnetic disk, and is then After the electron beam is transferred to an easily accessible buffer memory, a control unit that controls the electron optical system etc. controls the electron beam based on the drawing data held in the buffer memory, thereby marking the surface of a semiconductor wafer, etc. The shape is drawn.

[Problem that the invention seeks to solve]

On the other hand, since the above-mentioned lithography data is usually extremely large and requires a relatively long time to transfer, the exposure operation using an electron beam lithography system has a lower throughput of semiconductor wafers per unit time than light exposure. What will happen is inevitable.

Therefore, for example, it is conceivable to simply connect multiple series of buffer memories and electron beam exposure systems in parallel to a storage medium such as a large-capacity magnetic disk to improve the throughput.

However, when multiple types of semiconductor elements are mixed and formed inside a single semiconductor wafer for the purpose of efficiently manufacturing a wide variety of semiconductor elements in small quantities, such as logic elements, For each type of semiconductor element to be drawn in the process, drawing data must be transferred from a storage medium such as a magnetic disk to a buffer memory. The inventors have discovered that there is a problem in that the degree of contribution to an increase in the number of semiconductor wafers produced is low.

Considering that each electron beam lithography system is expensive, this becomes an important problem in improving productivity in manufacturing semiconductor devices.

An object of the present invention is to provide an electron beam lithography technique that can reduce the waiting time for transferring lithography data from a lithography data storage unit to a buffer memory and increase the number of objects to be drawn per unit time. It is about providing.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Means for solving problems]

A brief overview of typical inventions disclosed in this application is as follows.

That is, a plurality of electron beam lithography systems that draw predetermined figures on an object to be drawn using electron beams controlled based on predetermined drawing data, a lithography data storage section that holds the drawing data, and a plurality of electron beam lithography systems. The electron beam lithography system is equipped with a plurality of buffer memories interposed between the two and temporarily holds the lithography data transferred from the lithography data storage section, and each electron beam lithography system can be connected to any of the plurality of buffer memories. This technology provides a new electron beam lithography technology.

[Effect]

According to the above-mentioned means, for example, mutually different drawing data are transferred from a drawing data storage unit holding a plurality of drawing data to a plurality of buffer memories, and each of the plurality of electron beam drawing systems By using different drawing data transferred to each buffer memory alternately so as not to conflict with each other, in each electron beam drawing system, there is a waiting time for transferring drawing data from the drawing data storage section to the buffer memory. It becomes possible to continuously draw different types of figures using different drawing data without causing any problems, and it is possible to increase the number of objects to be drawn per unit time.

〔Example〕

FIG. 1 is a block diagram showing the main parts of an electron beam lithography apparatus that is an embodiment of the present invention.

The electron beam lithography apparatus of this embodiment includes a lithography data storage section 1,
Multiple buffer memories M 1 , buffer memories IJ M
2. Buffer memory M3. Buffer memory M4,
It includes a plurality of electron beam lithography systems A and a plurality of electron beam lithography systems B.

The drawing data storage unit 1 is composed of, for example, a large-capacity magnetic disk, and is used to draw drawings of multiple types of figures obtained by design automation using an image processing system, automatic placement and wiring system, etc. (not shown). This is where data etc. are held.

The electron beam lithography systems A and B each have an electron beam control signal generating section 2a, an electron beam lithography section 3as, an electron beam control signal generating section 2b, and an electron beam lithography section 3b.

The electron beam lithography section 3a and the electron beam lithography section 3b include an electron optical system 8as consisting of an electron beam source 4a, a shaper 5a, a lens 13a, a deflector 7a, etc., and an electron beam source 4b, a shaper 5b, a lens 6b, and a deflector. An electron optical system 8b consisting of a device 7b, etc. is provided, and directly below each of the electron optical systems 8a and 8b is a substrate such as a semiconductor wafer, which is movable by being placed on an x-y stage (not shown). It is configured such that a drawn object 9a and a drawn object 9b are positioned.

Then, it is emitted from the electron beam sources 4a and 4b, passes through the electron optical systems 8a and 8b, and then passes through the electron optical systems 8a and 8b.
The shape and arrival position of the photoelectronic surface of the electron beam tOa and the electron beam 10b that reach any one of the plurality of rectangular element formation areas in the objects 9a and 9b positioned directly under By controlling the electron beam control signal generators 2a and 2b that generate control signals for the electron optical systems 8a and 8b based on data, the electron beam 10a and the A predetermined figure is drawn by each of the resistors 10b, and the electron beam sensitive resist or the like coated on the right side of the object to be drawn 9a and the surface of a predetermined element formation region of 9b is exposed to the predetermined figure.

On the other hand, a switching control section 11 is interposed between the drawing data storage section 1 and the plurality of buffer memories M1 to M4.
Drawing data of mutually different figures is configured to be transferred to each of M1 to M4.

In this case, between the plurality of buffer memories M1 to M4 and the electron beam control signal generation sections 2a and 2b of the plurality of electron beam lithography systems A and B, a plurality of buffers of the electron beam control signal generation sections 2a and 2b are provided. A switching control section 12 that individually switches connections to the memories M1 to M4 is interposed, and the plurality of electron beam control signal generation sections 2a and 2b can control the plurality of buffer memos 'J M 1-M without competing with each other.
The structure is such that it can be connected to any one of 4.

Further, each of the above-mentioned units is configured to be centrally managed by the control computer 13.

The operation of this embodiment will be explained below.

Consider a case where semiconductor elements of different types are mixed and formed in each of the objects to be drawn 9a and 9b.

First, the electron beam drawing units 3a and 3b have an object 9 to be drawn, such as a semiconductor wafer, whose surface is coated with an electron beam-sensitive resist.
a and 9b are set, and the objects to be drawn 9a and 9
The type and arrangement information of semiconductor elements to be formed in each of the plurality of rectangular element formation regions in each of b are grasped in advance by the control computer 13. .

Next, by appropriately controlling the switching control section 11 by the control computer 13, a plurality of different drawing data corresponding to a plurality of types of semiconductor elements to be formed on the objects 9a and 9b are transferred from the drawing data storage section 1 to a plurality of different drawing data. Buffer memory M1
~ M4 and are individually transferred and held respectively.

Thereafter, by appropriately operating the switching control section 12,
The electron beam control signal generators 2a and 2b of the plurality of electron beam lithography systems A and B each have a plurality of buffer memories M.
1 to M4 so as not to conflict with each other.

For example, in the illustrated state, the electron beam control signal generator 2a
and 2b are connected to buffer memory M1 and buffer memo UM3, respectively.

Further, in the electron beam lithography units 3a and 3b, the device forming regions in which semiconductor devices of different types of the set objects 9a and 9b are to be formed are determined by the control computer 1.
Based on the arrangement information grasped in 3, the electron optical system 8a
and 8b.

In the electron beam drawing system A, the electron beam control signal generating section 2a controls the electron optical system 8a based on the drawing data obtained by accessing the buffer memory M1, thereby controlling a predetermined portion of the object 9a to be drawn. A predetermined figure is drawn on each element forming region by an electron beam 10a, and an electron beam sensitive resist coated on the surface of the element forming region is exposed to the predetermined figure.

At the same time, in the electron beam drawing system B, the electron beam drawing system B controls the electron optical system 8b based on the drawing data held in the buffer memo 'JM3 to which the electron beam control signal generating section 2b is connected. A predetermined figure different from the object to be drawn 9a is drawn in a predetermined rectangular formation area by an electron beam 10b, and the electron beam sensitive resist coated on the surface of the object to be drawn 9b is exposed to the predetermined figure.

Thereafter, by appropriately controlling the switching control section 12, the electron beam control signal generating sections 2a and 2b of the electron beam lithography systems A and B are set to one of the other plurality of buffer memories M1 to M4 so as not to compete with each other. At the same time, in the objects to be drawn 9a and 9b, the element formation area corresponding to the drawing data held in one of the buffer memories M1 to M4 to which the electron beam control signal generation units 2a and 2b are connected is switched. are positioned directly below the electron optical systems 8a and 8b, and immediately print a predetermined figure using the electron beams 10a and 10b without waiting for transfer of drawing data from the drawing data storage unit 1 to the plurality of buffer memories M1 to M4. Exposure work is performed by drawing.

As described above, in this embodiment, the following effects can be obtained.

(]), the electron beam control signal generation units 2a and 2b of the plurality of electron beam lithography systems A and B are connected to the plurality of buffer memory IJs.
Since it can be connected to any of M1 to M4,
By switching the connections of the electron beam control signal generating units 2a and 2b to the plurality of buffer memories M1 to M4 so as not to compete with each other, and by appropriately controlling the drawing order of the plurality of element formation regions on the objects 9a and 9b. , a plurality of elements of each of the objects 9a and 9b can be formed in the plurality of electron beam lithography systems A and 2 without causing a waiting time for transferring the lithography data from the lithography data storage unit 1 to the plurality of buffer memories M1 to M4. It becomes possible to continuously draw different types of figures in each area.

Thereby, it is possible to increase the number of objects 9a and 9b to be exposed by electron beam lithography per unit time.

(2) As a result of the above (1), objects to be drawn 9a and 9 such as semiconductor wafers formed with a mixture of different types of semiconductor elements
To reduce the price per performance of an electron beam lithography system without needing to unnecessarily increase the number of multiple expensive electron beam lithography systems A and B for the purpose of increasing the number of exposures per unit time of b. Can be done.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

The above explanation has mainly been about the application of the invention made by the present inventor to the electron beam exposure technology involved in the manufacture of semiconductor devices, which is the background field of application, but the invention is not limited to this. , can be widely applied to techniques for drawing a predetermined figure using electron beam irradiation.

〔Effect of the invention〕

A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

That is, a plurality of electron beam lithography systems that draw a predetermined figure on an object to be drawn using electron beams that are controlled based on predetermined drawing data, a lithography data storage section that holds the drawing data, and a plurality of the electron beam lithography systems. and a plurality of buffer memories that are interposed between the electron beam drawing system and the drawing data storage section and temporarily hold the drawing data transferred from the drawing data storage section, and each of the electron beam drawing systems has a plurality of buffer memories. For example, different drawing data can be transferred from a drawing data storage unit holding multiple drawing data to multiple buffer memories, and each of the plural electron beam drawing systems can be connected to In each electron beam lithography system, by alternately using different lithography data transferred to each of multiple buffer memories so as not to conflict with each other, the lithography data is transferred from the lithography data storage section to the buffer memory. It becomes possible to continuously draw different types of figures using different drawing data without any waiting time, and it is possible to increase the number of objects to be drawn per unit time.

[Brief explanation of the drawing]

FIG. 1 is a block diagram showing the main parts of an electron beam lithography apparatus that is an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Drawing data storage part, 2a, 2b... Electron beam control signal generation part, 3a, 3b... Electron beam drawing part, 4a,
4b...-Electron beam source, 5a, 5b... Forming machine, 5a,
5b...Lens, 7a. 7b... Deflector, 8a, 3b... Electron optical system, 9a
, 9b... object to be drawn, 10a, 10b-... electron beam,
11... Switching control section, 12... Switching control section, 13.
...Control computer, A, B...Electron beam lithography system, Ml, M
2. M3. M4...Buffer memory.

Claims (1)

[Scope of Claims] 1. A plurality of electron beam lithography systems that draw predetermined figures on an object to be drawn using electron beams that are controlled based on predetermined drawing data, and a drawing data storage unit that holds the drawing data. A plurality of buffer memories are provided between the plurality of electron beam lithography systems and temporarily hold the lithography data transferred from the lithography data storage section, and each of the electron beam lithography systems has a plurality of buffer memories. An electron beam lithography apparatus characterized in that it is connectable to any of the buffer memories. 2. Drawing data of mutually different figures is transferred from the drawing data storage section to each of the plurality of buffer memories, and each of the plurality of electron beam drawing systems is alternately connected to each different buffer memory. An electron beam lithography apparatus according to claim 1. 3. The object to be drawn is a semiconductor wafer coated with an electron beam sensitive resist, and an exposure operation is performed to draw a predetermined figure on the semiconductor wafer with an electron beam and expose it to light. The electron beam lithography apparatus according to item 1.