JPS63206471A - Method and device for forming carbon film - Google Patents
Method and device for forming carbon filmInfo
- Publication number
- JPS63206471A JPS63206471A JP3980087A JP3980087A JPS63206471A JP S63206471 A JPS63206471 A JP S63206471A JP 3980087 A JP3980087 A JP 3980087A JP 3980087 A JP3980087 A JP 3980087A JP S63206471 A JPS63206471 A JP S63206471A
- Authority
- JP
- Japan
- Prior art keywords
- disk
- area
- counter electrode
- carbon film
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 18
- 229910052799 carbon Inorganic materials 0.000 title claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 13
- 150000002500 ions Chemical class 0.000 claims abstract description 16
- 229910021385 hard carbon Inorganic materials 0.000 abstract description 12
- 238000009832 plasma treatment Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 29
- 239000007789 gas Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 9
- 229930195733 hydrocarbon Natural products 0.000 description 7
- 150000002430 hydrocarbons Chemical class 0.000 description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、電算機用磁気ディスク装置に用いられる磁気
ディスク、特に薄膜磁気ディスクに好適な硬質炭素保護
膜を形成する方法と装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for forming a hard carbon protective film suitable for magnetic disks used in magnetic disk drives for computers, particularly thin film magnetic disks.
［従来の技術］
メタンなどの炭化水素気体をグロー放電のエネルギによ
り分解すると、条件によっては、ダイヤモンド状カーボ
ンや、ｉカーボンと呼ばれる硬質な炭素皮膜が堆積する
ことは公知である。この硬質炭素膜は、磁気ディスクの
保護膜として有用であり、各種の考案ｉ１＜されている
。硬質炭素皮膜の形成には、高エネルギのイオンを基板
表面に照射しつつ膜形成するか、あるいは、基板を６０
０℃以上に熱しつつ膜形成する方法がとられている。[Prior Art] It is known that when a hydrocarbon gas such as methane is decomposed by the energy of glow discharge, a hard carbon film called diamond-like carbon or i-carbon is deposited depending on the conditions. This hard carbon film is useful as a protective film for magnetic disks, and various ideas have been developed. To form a hard carbon film, it is necessary to form the film while irradiating the substrate surface with high-energy ions, or to form the film while irradiating the substrate surface with high energy ions.
A method is used in which the film is formed while being heated to 0° C. or higher.
［発明が解決しようとする問題点］
しかしながら、上記従来の方法には、次のような欠点が
あった。[Problems to be Solved by the Invention] However, the above conventional method has the following drawbacks.
先ず、後者の方法では、磁気ディスクの場合、基板とし
てアルミニウムなどの融点の低い材料を使用するため、
基板を６００°Ｃ以上に熱することができず、膜形成が
困難となる欠点があった。First, in the latter method, in the case of magnetic disks, a material with a low melting point such as aluminum is used as the substrate.
There was a drawback that the substrate could not be heated above 600°C, making it difficult to form a film.
一方、前者の方法は、３００°Ｃ以下の低温で皮膜形成
が可能である。その例としては、■高エネルギイオンを
基板表面に照射する方法、■直流バイアスを基板に印加
してイオンを加速して基板表面に当てる方法、■高周波
二極放電によって炭化水素ガスを分解し高周波印加側電
極にイオンを当てる方法がある。On the other hand, the former method allows film formation at a low temperature of 300°C or lower. Examples include: ■ irradiating the substrate surface with high-energy ions, ■ applying a DC bias to the substrate to accelerate the ions and hitting the substrate surface, and ■ decomposing hydrocarbon gas using high-frequency bipolar discharge. There is a method of applying ions to the electrode on the application side.
この場合、■の高エネルギイオンを基板表面に照射する
方法は、成膜速度が遅く、磁気ディスクのような大面積
に均一に成膜するには高価なイオン源を使用する必要が
あるという問題がある。また、■の直流バイアスを印加
する方法や、■の高周波二極放電によって高周波印加側
電極にイオンを当てる方法は、ディスクおよびディスク
を保持しているキャリアを高電圧にする必要があり、不
要な放電を防止するための絶縁方式が非常に複雑になる
という問題がある。In this case, the method (2) of irradiating the substrate surface with high-energy ions has the problem that the film formation rate is slow and that an expensive ion source must be used to uniformly form a film over a large area such as a magnetic disk. There is. In addition, the method (2) of applying a DC bias and the method (2) of applying ions to the high-frequency application side electrode by high-frequency bipolar discharge require that the disk and the carrier holding the disk be brought to a high voltage. There is a problem in that the insulation method for preventing discharge becomes very complicated.
本発明は、上記問題点を解決した高周波プラズマを用い
ディスク上に硬質炭素皮膜を形成する方法および装置を
提供せんとするものである。The present invention aims to provide a method and apparatus for forming a hard carbon film on a disk using high-frequency plasma, which solves the above-mentioned problems.
［問題点を解決するための手段］
本発明にかかる皮膜形成方法は、ディスクおよびディス
クを保持するディスクキャリアを接地し、ディスクの被
処理部に対向して設けた対向電極に高周波電圧を印加す
ることによってプラズマを保持し、この対向電極の面積
を被処理部の面積より十分大きくすることにより、被処
理部分の表面電位の平均値をプラズマ電位の平均値に対
して大きな負の電位となし、これにより高エネルギのイ
オンを被処理表面に流出させて皮膜を形成させるもので
あ−る。[Means for Solving the Problems] In the film forming method according to the present invention, a disk and a disk carrier holding the disk are grounded, and a high frequency voltage is applied to a counter electrode provided opposite to a portion of the disk to be processed. By holding the plasma, and by making the area of this counter electrode sufficiently larger than the area of the part to be treated, the average value of the surface potential of the part to be treated is made to be a large negative potential with respect to the average value of the plasma potential, This causes high-energy ions to flow out onto the surface to be treated to form a film.
この方法を実施するための装置として、ディスクおよび
ディスクを保持するディスクキャリアを接地した接地電
極を設ける。この接地電極に対向して対向電極が設けら
れる。この対向電極は、接地電極にプラズマが当る面積
よりも十分に大きな面積を有する電極である。As an apparatus for carrying out this method, a ground electrode is provided which grounds the disk and the disk carrier holding the disk. A counter electrode is provided opposite this ground electrode. This counter electrode is an electrode having a sufficiently larger area than the area where the plasma hits the ground electrode.
なお、好ましくは、対向電極をディスクの両面に設けて
、両面同時に炭素皮膜を形成する構成とする。Preferably, counter electrodes are provided on both sides of the disk, and carbon films are formed on both sides at the same time.
ここで、「被処理面積より十分大きな面積を有する対向
電極」という概念をより定量的に示す。Here, the concept of "a counter electrode having a sufficiently larger area than the area to be processed" will be explained more quantitatively.
磁気ディスクにプラズマが接する部分の面積を８１、対
向電極にプラズマが接する部分の面積を８２として、Ｓ
、／ Ｓ□の値が１の場合は、それぞれの部分とプラズ
マの間に等しい電位差が生じるようになっている。しか
しながら、ｓ＊／ ｓ、 ＞ １の場合には、処理部分
とプラズマ間の電位差の方が大きくなる。上記の効果は
Ｓｔ／Ｓｔが１よりわずかでも大きければ実現されるが
、Ｓ２／Ｓ、が大きい程処理部分とプラズマ間の電位差
が大きくなり、処理効率が向上されるので、十分な効果
を得るにはＳｚ／Ｓ＋が１．５より大きいことが望まし
く、スパッタエツチングなどのように更に大きなエネル
ギのイオンが必要な場合にはｓｚ／ｓｔが３より大きい
ことが望ましい。Assuming that the area of the part where the plasma contacts the magnetic disk is 81 and the area of the part where the plasma contacts the counter electrode is 82, S
, /S□ is 1, an equal potential difference is generated between each part and the plasma. However, if s*/s, > 1, the potential difference between the treated part and the plasma will be larger. The above effect can be achieved if St/St is even slightly larger than 1, but the larger S2/S is, the larger the potential difference between the processing area and the plasma becomes, and the processing efficiency is improved, so a sufficient effect can be obtained. It is desirable for Sz/S+ to be greater than 1.5, and when ions with even higher energy are required, such as in sputter etching, it is desirable that sz/st be greater than 3.
本発明におけるプラズマを形成するための反応性ガスど
しては、メタン、エタン、プロパン、エチレン、アセチ
レン、ベンゼン、トルエン等の炭化水素がある。これら
の炭化水素は、気体のものはガス状態で、また、液体の
ものは蒸気として使用する。また、炭化水素と水素の混
合ガスを使用することもできる。Reactive gases for forming plasma in the present invention include hydrocarbons such as methane, ethane, propane, ethylene, acetylene, benzene, and toluene. These hydrocarbons are used in the gas state if they are gaseous, and in the form of vapor if they are liquid. It is also possible to use a mixed gas of hydrocarbon and hydrogen.
［作用］
本発明は、皮膜を形成すべきディスクを接地側とし、そ
れに対向する対向電極に１００ＫＨｚ〜１００ＭＨ。[Function] In the present invention, the disk on which the film is to be formed is set as the ground side, and the counter electrode facing the disk is set at 100 KHz to 100 MHZ.
の高周波電圧を印加することにより炭化水素または炭化
水素と水素の混合ガスのプラズマを保持し、接地側電極
（ディスク）表面に炭素皮膜を形成する。By applying a high frequency voltage of , a plasma of hydrocarbon or a mixed gas of hydrocarbon and hydrogen is maintained, and a carbon film is formed on the surface of the ground side electrode (disk).
本発明の特徴は、対向電極の面積をディスク（接地側電
極）の被処理部の面積より十分大きくしたことである。A feature of the present invention is that the area of the counter electrode is made sufficiently larger than the area of the processed portion of the disk (ground side electrode).
上記周波数範囲の高周波放電においては電子の移動速度
が正イオンの移動速度に比べ著しく大きいために生ずる
シース電圧降下が、二つの電極の有効面積比によって変
化し、面積の小さい電極の電圧降下が大きくなる。ただ
し、上記の有効面積とはプラズマが触れている部分の面
積である。したがって、ディスクの被処理部の面積に対
し対向電極のプラズマに触れている面積を十分大きくす
ることにより、プラズマ電位か被処理部表面の電位に対
して高電位となり、高エネルギのイオンが被処理部表面
に流入する状況を作り出すことができ、硬質炭素皮膜が
形成される。In high-frequency discharge in the above frequency range, the sheath voltage drop that occurs because the moving speed of electrons is significantly higher than the moving speed of positive ions changes depending on the effective area ratio of the two electrodes, and the voltage drop of the electrode with a small area is large. Become. However, the effective area mentioned above is the area of the part that the plasma is in contact with. Therefore, by making the area of the opposing electrode in contact with the plasma sufficiently large compared to the area of the disk to be processed, the plasma potential will be higher than the potential of the surface of the processed area, and high-energy ions will be This creates a situation in which carbon flows into the surface of the part, forming a hard carbon film.
上記したように、ディスクの被処理部（接地側電極）と
対向電極の有効面積比は、少なくとも１：３、好ましく
は１：５以上とする。また、高周波電圧の振幅はＩＫＶ
以上であることが好ましい。As described above, the effective area ratio between the processed portion of the disk (ground side electrode) and the counter electrode is at least 1:3, preferably 1:5 or more. Also, the amplitude of the high frequency voltage is IKV
It is preferable that it is above.
本発明により形成される硬質炭素皮膜は、アモルファス
構造の炭素膜であり、ビッカース硬度１０００以上の硬
質かつ摩耗しにくい膜である。The hard carbon film formed by the present invention is a carbon film with an amorphous structure, and is a hard film with a Vickers hardness of 1000 or more and is hard to wear.
［実施例］ 以下、本発明の実施例について説明する。[Example] Examples of the present invention will be described below.
先ず図面を参照して、装置について説明する。First, the apparatus will be described with reference to the drawings.
第１図において、本装置は、真空槽１に設けられ、真空
排気ポンプ（図示せず）に連結される排気口２と、プラ
ズマ処理室３と、高周波印加機構４と、ディスクキャリ
ア保持機構５と、反応性ガス供給機構（図示せず）に連
結されるガス導入口６とからなる。In FIG. 1, this apparatus includes an exhaust port 2 provided in a vacuum chamber 1 and connected to a vacuum pump (not shown), a plasma processing chamber 3, a high frequency application mechanism 4, and a disk carrier holding mechanism 5. and a gas inlet 6 connected to a reactive gas supply mechanism (not shown).
上記プラズマ処理室３は、真空槽ｌ内に配置された対向
電極７と、接地電極であるディスク９とに囲まれた空間
として形成される。このプラズマ処理室３内に反応性ガ
スを導入して、高周波電圧を印加することにより、プラ
ズマを形成する。The plasma processing chamber 3 is formed as a space surrounded by a counter electrode 7 arranged in a vacuum chamber 1 and a disk 9 serving as a ground electrode. A reactive gas is introduced into the plasma processing chamber 3 and a high frequency voltage is applied to form plasma.
図示しない反応性ガス供給機構からのプラズマ処理室３
への反応性ガスの導入は、ガス導入口６から行なわれる
。゛この場合、対向電極７に小孔８を多数設けておくこ
とにより、ガスをプラズマ処理室３内に均等に導入する
ことができる。Plasma processing chamber 3 from a reactive gas supply mechanism (not shown)
The reactive gas is introduced through the gas inlet 6. In this case, by providing a large number of small holes 8 in the counter electrode 7, the gas can be evenly introduced into the plasma processing chamber 3.
上記ディスク９は、ディスクキャリア１０により、対向
電極７と対向する状態で保持される。The disk 9 is held by a disk carrier 10 in a state facing the counter electrode 7.
ディスクキャリア１０は、ディスクキャリア保持機構５
によって保持され、真空槽１とともに接地される。The disk carrier 10 has a disk carrier holding mechanism 5
and is grounded together with the vacuum chamber 1.
対向電極７の面積は、接地電極（ディスク）に当るプラ
ズマの面積よりも十分大きな面積になっている。本実施
例においては、ディスク９を接地側電極とし、それに対
向する対向電極７に１００ＫＨ。The area of the counter electrode 7 is sufficiently larger than the area of the plasma hitting the ground electrode (disk). In this embodiment, the disk 9 is used as the ground side electrode, and the counter electrode 7 facing it is applied with a voltage of 100 KH.
ないし１００ＭＩ（、の高周波電圧を高周波印加機構４
から供給する。The high frequency voltage applying mechanism 4
Supplied from.
次に、本発明による硬質炭素皮膜形成方法を実際に適用
した場合を例にとって更に説明する。Next, a case in which the method for forming a hard carbon film according to the present invention is actually applied will be further explained using an example.
第１図に示した装置に、８インチのアルミ基板（膜厚２
ｍ層上にＮ−Ｐメッキ層（下地層） 、 Ｃｏ −Ｎｉ
−Ｃｒ系スパッタ層（磁性層）を形成した磁気ディス
ク９を、ディスクキャリア１０に取り付けてセットした
。ついで、真空槽１を予備排気した後、メタンガスを導
入し、０．０５ｍｔｏｒｒに保持し、対向電極７ ニ１
３．５６ＭＨｚ、電圧振＠２ ＫＶ（７）高周波電圧を
印加し、プラズマを発生させた。An 8-inch aluminum substrate (film thickness 2
N-P plating layer (base layer) on the m layer, Co-Ni
A magnetic disk 9 on which a -Cr-based sputtered layer (magnetic layer) was formed was attached and set on a disk carrier 10. Next, after preliminary evacuation of the vacuum chamber 1, methane gas was introduced and maintained at 0.05 mtorr, and the counter electrode 7
A high frequency voltage of 3.56 MHz and a voltage amplitude of 2 KV (7) was applied to generate plasma.
５分間の処理の結果、５００人の硬質炭素膜が形成され
た。処理中、異常放電の発生は見られなかった。上記処
理を行なったディスクは、処理前に此べ耐摺動寿命が大
幅に向上した。As a result of the 5 minute treatment, a 500 hard carbon film was formed. No abnormal discharge was observed during the treatment. The sliding life of the disks subjected to the above treatment was significantly improved before the treatment.
［発明の効果］
以上説明したように、本発明によれば、回転電極を接地
し対向電極に高周波電圧を印加してプラズマを保持する
ようにし、高電圧部を電極部に限定したため、ディスク
に高周波電圧を印加した場合の機構上の問題、不要な放
電の発生、および絶縁の問題をまったくなくすことがで
きる。[Effects of the Invention] As explained above, according to the present invention, the rotating electrode is grounded and a high frequency voltage is applied to the opposing electrode to maintain plasma, and the high voltage part is limited to the electrode part. Mechanical problems, unnecessary discharges, and insulation problems that occur when high-frequency voltages are applied can be completely eliminated.
更には、対向電極の面積をディスクの処理部（接地側電
極）の面積より十分大きな面積にしたので、高エネルギ
のイオンが被処理部表面に流入する状況を作り出すこと
ができ、硬質の炭素皮膜の形成を容易に行なうことがで
きる。Furthermore, since the area of the counter electrode is made sufficiently larger than the area of the processing section (ground side electrode) of the disk, it is possible to create a situation in which high-energy ions flow into the surface of the processing section, creating a hard carbon film. can be easily formed.
本方法は、ディスクをキャリアで保持しつつ移動させ、
連続に多層膜を形成する方法および装置において特に効
果を発揮する。また不要な放電の発生を防止できるため
欠陥の少ない皮膜を再現性よく得ることかできる。This method involves moving the disc while holding it in a carrier,
It is particularly effective in methods and devices for continuously forming multilayer films. Furthermore, since unnecessary discharge can be prevented from occurring, a film with few defects can be obtained with good reproducibility.
第１図は、本発明の一実施例であり、炭素皮膜形成装置
の全体構成図である。
１・・・真空槽、２・・・排気口、３・・・プラズマ処
理室、４・・・高周波印加機構、５−・・ディスクキャ
リア保持機構、６・・・ガス導入口、７−・・対向電極
、８・・・小孔、９・・・ディスク。FIG. 1 is an embodiment of the present invention, and is an overall configuration diagram of a carbon film forming apparatus. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 2... Exhaust port, 3... Plasma processing chamber, 4... High frequency application mechanism, 5-... Disk carrier holding mechanism, 6... Gas inlet, 7-... - Counter electrode, 8... small hole, 9... disk.
Claims (1)
大きい面積を持つ対向電極とを真空槽中に配置した後、
該真空槽中に、炭素を含む反応性ガスを導入し、ディス
クを接地し、対向電極に高周波電圧を印加してプラズマ
を形成し、該プラズマを、ディスクの平面電位の平均値
がプラズマ電位の平均値に対して負の大きな値となるよ
う保持して、高エネルギのイオンを被処理表面に流出さ
せて皮膜を形成することを特徴とする炭素皮膜形成方法
。 ２、対向電極をディスクの両面に配置して、プラズマを
ディスクの両面側に各々形成して、両面同時に皮膜を形
成することを特徴とする特許請求の範囲第１項記載の炭
素皮膜形成方法。 ３、ディスクを保持すると共に接地するディスク保持機
構と、該ディスクの被処理部に対向して配置される対向
電極とを真空槽中に備え、 かつ、上記対向電極を、上記ディスクの被処理部の面積
より十分大きく設定して構成することを特徴とする炭素
皮膜形成装置。 ４、上記対向電極をディスクの両面に配置した特許請求
の範囲第３項記載の炭素皮膜形成装置。[Claims] 1. After placing a disk and a counter electrode having an area sufficiently larger than the area of the processed portion of the disk in a vacuum chamber,
A reactive gas containing carbon is introduced into the vacuum chamber, the disk is grounded, and a high frequency voltage is applied to the counter electrode to form plasma. A carbon film forming method characterized by forming a film by maintaining high-energy ions to a surface to be treated so as to have a large negative value with respect to an average value. 2. The method for forming a carbon film according to claim 1, characterized in that counter electrodes are arranged on both sides of the disk, plasma is formed on both sides of the disk, and a film is formed on both sides at the same time. 3. A vacuum chamber is provided with a disk holding mechanism that holds the disk and is grounded, and a counter electrode placed opposite the processed portion of the disk, and the counter electrode is placed opposite the processed portion of the disk. 1. A carbon film forming apparatus characterized in that the device is configured to have an area sufficiently larger than the area of the carbon film forming apparatus. 4. The carbon film forming apparatus according to claim 3, wherein the counter electrodes are arranged on both sides of the disk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62039800A JPH0674505B2 (en) | 1987-02-23 | 1987-02-23 | Carbon film forming method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62039800A JPH0674505B2 (en) | 1987-02-23 | 1987-02-23 | Carbon film forming method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63206471A true JPS63206471A (en) | 1988-08-25 |
| JPH0674505B2 JPH0674505B2 (en) | 1994-09-21 |
Family
ID=12563030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62039800A Expired - Lifetime JPH0674505B2 (en) | 1987-02-23 | 1987-02-23 | Carbon film forming method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0674505B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0421276A2 (en) * | 1989-09-30 | 1991-04-10 | Nukem GmbH | Process and apparatus for coating parts with cubic bornitride or diamond |
| EP0730266A2 (en) * | 1995-02-06 | 1996-09-04 | Hitachi, Ltd. | Apparatus for plasma-processing a disk substrate and method of manufacturing a magnetic disk |
| US6468617B1 (en) | 1993-07-20 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| JP2013072132A (en) * | 2011-09-29 | 2013-04-22 | Ulvac Japan Ltd | Film-forming apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60114576A (en) * | 1983-11-28 | 1985-06-21 | Canon Inc | Manufacture of deposited film |
-
1987
- 1987-02-23 JP JP62039800A patent/JPH0674505B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60114576A (en) * | 1983-11-28 | 1985-06-21 | Canon Inc | Manufacture of deposited film |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0421276A2 (en) * | 1989-09-30 | 1991-04-10 | Nukem GmbH | Process and apparatus for coating parts with cubic bornitride or diamond |
| US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| US6468617B1 (en) | 1993-07-20 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| EP0730266A2 (en) * | 1995-02-06 | 1996-09-04 | Hitachi, Ltd. | Apparatus for plasma-processing a disk substrate and method of manufacturing a magnetic disk |
| EP0730266A3 (en) * | 1995-02-06 | 1998-07-01 | Hitachi, Ltd. | Apparatus for plasma-processing a disk substrate and method of manufacturing a magnetic disk |
| JP2013072132A (en) * | 2011-09-29 | 2013-04-22 | Ulvac Japan Ltd | Film-forming apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0674505B2 (en) | 1994-09-21 |
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