JPS63206008A - Oscillator - Google Patents

Oscillator

Info

Publication number
JPS63206008A
JPS63206008A JP3880087A JP3880087A JPS63206008A JP S63206008 A JPS63206008 A JP S63206008A JP 3880087 A JP3880087 A JP 3880087A JP 3880087 A JP3880087 A JP 3880087A JP S63206008 A JPS63206008 A JP S63206008A
Authority
JP
Japan
Prior art keywords
base
substrate
face
hole
dielectric constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3880087A
Other languages
Japanese (ja)
Inventor
Kenichi Odaka
小高 賢一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu General Ltd
Original Assignee
Fujitsu General Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu General Ltd filed Critical Fujitsu General Ltd
Priority to JP3880087A priority Critical patent/JPS63206008A/en
Publication of JPS63206008A publication Critical patent/JPS63206008A/en
Pending legal-status Critical Current

Links

Landscapes

  • Control Of Motors That Do Not Use Commutators (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

PURPOSE:To easily manufacture a small-sized oscillator by coating a metallic film to the inside of a hole made to a high dielectric constant base, one face and side face and forming an oscillation circuit to the other face of the base by a microstrip line. CONSTITUTION:The thickness of the base 9 having a high dielectric constant is selected as 1/4 of a guide wavelength lambdag in the resonance frequency. A resonance hole 6 is provided to an optional position of the base 9, the inside of the hole 6, the bottom face and the side face of the base 9 are coated by conductive metallic films 5, 7 to form the resonator. The oscillation circuit is formed to the upper face of the base 9 by using the microstrip line 2. The lambdag/4 coaxial dielectric resonator formed to the base and a hybrid integrated circuit on the upper face are coupled electrically to generate a prescribed frequency. Thus, the manufacturing man-hour is reduced and the product is made small in size.

Description

【発明の詳細な説明】 「産業上の利用分野」 本発明は、高周波回路における誘電体共振子を利用した
発振器に関するものである。
DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to an oscillator using a dielectric resonator in a high frequency circuit.

「従来の技術」 従来、誘電体共振子を用いた発振器は第2図に示すよう
にアルミナ基板などの低誘電率基板(1)の一方の面に
マイクロストリップライン(2)による回路を形成し、
他方の面にはアース用の金属膜(3)を形成し、このア
ース用金属膜(3)に、高誘電率誘電体共振子(4)の
導電性金属膜(5)を半田付けし、また、前記マイクロ
ストリップライン(2)と共振子(4)の穴(6)の金
属膜(7)は、共振子(4)と低誘電率基板(1)にビ
ス(8)などを貫通し半田付けによって電気的に接続さ
れていた。
"Prior Art" Conventionally, an oscillator using a dielectric resonator has a microstrip line (2) circuit formed on one surface of a low dielectric constant substrate (1) such as an alumina substrate, as shown in Figure 2. ,
A grounding metal film (3) is formed on the other surface, and a conductive metal film (5) of a high dielectric constant dielectric resonator (4) is soldered to this grounding metal film (3). Further, the metal film (7) in the hole (6) of the microstrip line (2) and the resonator (4) is formed by passing a screw (8) or the like through the resonator (4) and the low dielectric constant substrate (1). They were electrically connected by soldering.

「発明が解決しようとする問題点」 このような発振器はアルミナ基板などの低誘電率基板(
1)に一方の面に金属膜(3)を形成し、他方の面にマ
イクロストリップライン(2)を形成し、また、共振子
(4)も高誘電体層(9)の外周や穴(6)の内側に金
属膜(5)(7)を形成し、これらを手作業によってビ
ス(8)等を貫通し半田付けして組立てなければならず
、余計な作業工数のがかるものであった。また、このよ
うな従来の共振子はマイクロIC化することが困難であ
るなどの問題点があった。
``Problems to be solved by the invention'' Such oscillators are manufactured using low dielectric constant substrates such as alumina substrates (
1), a metal film (3) is formed on one surface, a microstrip line (2) is formed on the other surface, and the resonator (4) is also formed on the outer periphery of the high dielectric layer (9) or the hole ( Metal films (5) and (7) were formed on the inside of 6), and these had to be assembled by hand by penetrating screws (8) etc. and soldering them, which required an extra number of man-hours. . Furthermore, such conventional resonators have had problems such as difficulty in fabricating them into micro ICs.

r問題点を解決するための手段」 本発明は以上のような問題点を解決するためになされた
もので、高誘電率の誘電体からなる基板の任意の位置に
共振用の穴を設け、この穴の内部、前記基板の一方の面
および側面に導電性金属膜を形成して共振子となし、前
記基板の他方の面にマイクロストリップラインによる発
振回路を形成したことを特徴とするものである。
``Means for Solving Problems'' The present invention was made to solve the above problems, and includes providing resonance holes at arbitrary positions on a substrate made of a dielectric material with a high dielectric constant, A conductive metal film is formed inside the hole and on one surface and side surface of the substrate to form a resonator, and an oscillation circuit using a microstrip line is formed on the other surface of the substrate. be.

「作用」 このように構成すれば、高誘電体層が基板を兼用するこ
ととなって低誘電率基板が省略され、かつこの高誘電体
層の基板の厚さをλg/4とすれば。
"Function" With this configuration, the high dielectric constant layer also serves as the substrate, and the low dielectric constant substrate is omitted, and the thickness of the substrate of the high dielectric constant layer is set to λg/4.

波長λJの発振回路となる。ここでλlは共振周波数に
対応する管内波長である。
This becomes an oscillation circuit with wavelength λJ. Here, λl is the tube wavelength corresponding to the resonant frequency.

「実施例」 第1図に基づいて本発明の詳細な説明する。"Example" The present invention will be explained in detail based on FIG.

(9)は高誘電率誘電体からなる基板であり、この基板
(9)の厚さは共振周波数の管内波長をλ嘗としたとき
、λ#/4とする。この基板(9)には任意の位置に共
振用の穴(6)が設けられ、この穴(6)の内部と基板
(9)の底面および側面は導電性金属膜(7)(5)で
被層され基板(9)の上面にはマイクロストリップライ
ン(2)によって発振回路を形成する。
Reference numeral (9) denotes a substrate made of a high permittivity dielectric material, and the thickness of this substrate (9) is λ#/4, where λ is the internal wavelength of the resonant frequency. This substrate (9) is provided with a resonance hole (6) at an arbitrary position, and the inside of this hole (6) and the bottom and side surfaces of the substrate (9) are covered with a conductive metal film (7) (5). An oscillation circuit is formed on the upper surface of the overlayered substrate (9) by a microstrip line (2).

このようにして基板に形成したλざ/4同軸型誘電体共
振子と基板の上面に形成したハイブリッド集積化回路を
電気的に結合することにより所定の周波数を発生する発
振器が得られる。
By electrically coupling the λ/4 coaxial dielectric resonator thus formed on the substrate and the hybrid integrated circuit formed on the upper surface of the substrate, an oscillator that generates a predetermined frequency can be obtained.

「発明の効果」 本発明は以上のように構成したので、従来のように高誘
電率誘電体共振子を手作業によって低誘電率基板に半田
付けする必要がなく余計な作業工数をかけずにすみ、ま
た共振子が基板とともに一体に形成されているために極
めて小型化され取り付は場所に制約されたりすることが
ないなどの効果を有するものである6
"Effects of the Invention" Since the present invention is configured as described above, it is not necessary to manually solder a high dielectric constant dielectric resonator to a low dielectric constant substrate as in the conventional method, and it is possible to eliminate unnecessary work man-hours. Furthermore, since the resonator is integrally formed with the substrate, it is extremely compact and has the advantage of not being restricted by location.6

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による発振器の一実施例を示す断面図、
第2図は従来の発振器の断面図である。 (1)・・・低誘電率基板、(2)・・・マイクロスト
リップライン、(3)・・・金属膜、(4)・・・共振
子、(5)・・・金属膜、(6)・・・穴、(7)・・
・金属膜、(8)・・・ビス、(9)・・・高誘電率基
板。 出 願 人  株式会社富士通ゼネラル第  1  図
FIG. 1 is a sectional view showing an embodiment of an oscillator according to the present invention;
FIG. 2 is a cross-sectional view of a conventional oscillator. (1)...Low dielectric constant substrate, (2)...Microstrip line, (3)...Metal film, (4)...Resonator, (5)...Metal film, (6 )...hole, (7)...
- Metal film, (8)... screw, (9)... high dielectric constant substrate. Applicant Fujitsu General Ltd. Figure 1

Claims (2)

【特許請求の範囲】[Claims] (1)高誘電率の誘電体からなる基板の任意の位置に共
振用の穴を設け、この穴の内部、前記基板の一方の面お
よび側面に導電性金属膜を形成して共振子となし、前記
基板の他方の面にマイクロストリップラインによる発振
回路を形成したことを特徴とする発振器。
(1) A resonant hole is provided at any position on a substrate made of a dielectric material with a high dielectric constant, and a conductive metal film is formed inside the hole and on one side and side surfaces of the substrate to form a resonator. . An oscillator, characterized in that an oscillation circuit using a microstrip line is formed on the other surface of the substrate.
(2)基板の厚さはλ_g/4(λ_gは共振周波数に
対応する管内波長)としたことを特徴とする特許請求の
範囲第1項記載の発振器。
(2) The oscillator according to claim 1, wherein the thickness of the substrate is λ_g/4 (λ_g is the tube wavelength corresponding to the resonant frequency).
JP3880087A 1987-02-20 1987-02-20 Oscillator Pending JPS63206008A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3880087A JPS63206008A (en) 1987-02-20 1987-02-20 Oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3880087A JPS63206008A (en) 1987-02-20 1987-02-20 Oscillator

Publications (1)

Publication Number Publication Date
JPS63206008A true JPS63206008A (en) 1988-08-25

Family

ID=12535371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3880087A Pending JPS63206008A (en) 1987-02-20 1987-02-20 Oscillator

Country Status (1)

Country Link
JP (1) JPS63206008A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698906A (en) * 1980-01-10 1981-08-08 Mitsubishi Electric Corp Voltage controlled oscillator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698906A (en) * 1980-01-10 1981-08-08 Mitsubishi Electric Corp Voltage controlled oscillator

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