JPS63204670A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS63204670A JPS63204670A JP62036302A JP3630287A JPS63204670A JP S63204670 A JPS63204670 A JP S63204670A JP 62036302 A JP62036302 A JP 62036302A JP 3630287 A JP3630287 A JP 3630287A JP S63204670 A JPS63204670 A JP S63204670A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- emitting diode
- light emitting
- optical fiber
- radiation type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 239000013307 optical fiber Substances 0.000 claims abstract description 21
- 238000001228 spectrum Methods 0.000 claims abstract description 16
- 238000004891 communication Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract 6
- 230000002238 attenuated effect Effects 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005253 cladding Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 101100059652 Mus musculus Cetn1 gene Proteins 0.000 description 1
- 101100059655 Mus musculus Cetn2 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、端面放射型発光ダイオードと光ファイバとが
結合されてなる光半導体装置において、その光出力の温
度依存性を低減するために、端面放射型発光ダイオード
と光７アイバとの光軸間に、前記端面放射型発光ダイオ
ードの所定の放射光スペクトルよりも短び長側の放射光
スペクトルを減衰するフィルタを設けるものである。Detailed Description of the Invention [Summary] The present invention provides an optical semiconductor device in which an edge-emitting light emitting diode and an optical fiber are coupled, in order to reduce the temperature dependence of its optical output. A filter is provided between the optical axes of the diode and the optical fiber to attenuate the emitted light spectrum on the shorter and longer sides than the predetermined emitted light spectrum of the edge-emitting light emitting diode.
本発明は光半導体装置、特にその端面放射型発光ダイオ
ードと、光ファイバとの結合に関する。The present invention relates to an optical semiconductor device, particularly to coupling an edge-emitting light emitting diode thereof to an optical fiber.
従来の技術を、第５図を参照して説明する。 A conventional technique will be explained with reference to FIG.
第５囚は、通常の端面放射型発光ダイオードであシ、囚
はその断面図、０３）はその上向図である。The fifth cell is a normal edge-emitting light emitting diode, and the cell 03) is a cross-sectional view of the diode, and 03) is a top view thereof.
第５幽囚に示す様に、この趨向放射型発光ダイオードは
、インジウム−燐（ＩｎＰ）からなるｎ型基、［７１及
びその上部に形成されｆｔ Ｉ ｎ ＰからなるＰ型ｖ
Ｌ流阻止層２に設けられたＶ溝内にＩｎＰからなるｎ型
クラッド層３、及びノンドーグのインジウ・砒素・燐
（ＩｎＧａＡｓＰ）からなる活性層４が形成され、更に
その上部には、ＩｎＰからなるＰ型クラッド層５及びＰ
型のＩｎＧａＡｓＰからなるコンタクト層６が順次形成
されている。また、素子の上面は、ｍ５図（Ｂｌに示す
様に、絶Ｎｍ７によって、絶縁姑なされてシシ、光取出
し面となって−るＡ端面側にのみ、この絶縁膜７が除去
されて、電流注入領域が設けられてしる。As shown in the fifth prisoner, this directional emission type light emitting diode has an n-type group made of indium-phosphorous (InP), [71] and a p-type v made of ft I n P formed on the top of the n-type group [71].
An n-type cladding layer 3 made of InP is placed in the V-groove provided in the L-flow blocking layer 2, and non-doped indium, arsenic, and phosphorus are added.
An active layer 4 made of (InGaAsP) is formed, and further above it, a P-type cladding layer 5 made of InP and a P-type cladding layer 5 made of InP are formed.
A contact layer 6 made of type InGaAsP is successively formed. In addition, as shown in Figure M5 (Bl), the insulation film 7 is removed only on the A end face side, which serves as the light extraction surface, and the insulating film 7 is removed by Nm7. An injection region is provided.
上記した端面放射型発光ダイオードは、その発光径を２
〜３（μｍ）にまで小さくできるため、通常、一般に使
用されているモードフィールド径がＩＯμｍ程度のシン
グルモード光ファイバに高効率で結合させることができ
る。The edge-emitting light emitting diode described above has an emission diameter of 2
Since it can be made as small as ~3 (μm), it can be coupled with high efficiency to a commonly used single mode optical fiber having a mode field diameter of about IO μm.
しかし、この端面放射型発光ダイオードは、先導波路の
パスが長すため素子が低温になると、その光出力が自然
放出による発光のみで無く、誘導放出による発光を伴な
い、その結果、第６因に示す様に、その光出力が急増す
る場合があった。このため、従来は安定した光出力を光
ファイバに供給できず、信頼性の昆論光通信ができない
と論う問題点を有していた。However, in this edge-emitting type light emitting diode, the path of the leading waveguide is long, so when the device becomes low temperature, the light output is not only light emission due to spontaneous emission, but also light emission due to stimulated emission, and as a result, the 6th factor As shown in Figure 2, there were cases in which the optical output suddenly increased. For this reason, conventional methods have had problems in that stable optical output cannot be supplied to the optical fiber and reliable optical communication cannot be achieved.
本発明け、上述した問題点に鑑み、端面放射型発光ダイ
オードと、光ファイバとが結合されてなる光半導体装置
において、安定した光出力を光ファイバに供給するもの
であり、それは、端面放射型発光ダイオードと、光ファ
イバとの光軸間に、上記端面放射型発光ダイオードの所
定の放射光スペクトルよりも短波長１１１１１の放射光
スペクトルを減衰するフィルタを設けることによって実
親する。In view of the above-mentioned problems, the present invention provides an optical semiconductor device in which an edge-emitting type light emitting diode and an optical fiber are coupled, in which stable light output is supplied to the optical fiber. This is accomplished by providing a filter between the optical axes of the light emitting diode and the optical fiber, which attenuates the spectrum of emitted light with a shorter wavelength 11111 than the predetermined spectrum of emitted light of the edge emitting type light emitting diode.
前記し念通常の端面放射型発光ダイオードは、低温に々
ると前記した様に、その光出力が急増するが、それと共
に％第７因に示す様に、その放射光スペクトルのピーク
値が短波長側にシフトする。As mentioned above, when an ordinary edge-emitting light emitting diode is exposed to low temperatures, its light output increases rapidly, but at the same time, as shown in the seventh factor, the peak value of its emitted light spectrum becomes shorter. Shift to the wavelength side.
これば温度の低下に伴なって素子内部のエネルギ・ギャ
ップが狭くなるためであシ、本発明けこの様に温度低下
によって短波長側にシフトした放射光スペクトルをフィ
ルタによって減衰させることによって、光出力の増加を
防止することが可能である。This is because the energy gap inside the element narrows as the temperature decreases, and the present invention uses a filter to attenuate the emitted light spectrum that has shifted toward shorter wavelengths due to the temperature decrease. It is possible to prevent an increase in output.
以下、本発明の一実施例を第１図を参照して詳卸１に説
明する。８１１１図は本実施例による光ファイバの結合
を示す断面図である。Hereinafter, one embodiment of the present invention will be explained in detail with reference to FIG. FIG. 8111 is a cross-sectional view showing the coupling of optical fibers according to this embodiment.
第１図において、９は発光素子部であシ、その内部には
、肌７図に示した温度特性を有する通常の端面放射型発
光ダイオードからなるテップｌ】、ワインド１６．１７
球レンズ１２などが設けられてｂる。甘た、１０け光フ
ァイバ１５の結合部であυ、その内部には、光ファイバ
１５、収束用の球レンズ１２及び本発明によシフィルタ
１４が設けられてｂる。In FIG. 1, reference numeral 9 denotes a light emitting element section, inside of which is a typical edge-emitting type light emitting diode having the temperature characteristics shown in FIG.
A ball lens 12 and the like are provided. In addition, it is a coupling part of ten optical fibers 15, and inside thereof, the optical fibers 15, a converging ball lens 12, and a filter 14 according to the present invention are provided.
Ｃのフィルタ１４はアルミナＣＡｌｔ（：）ｓ）、酸化
シリコン（Ｓ ＋ Ｏｔ） ｓ酸化チタン（Ｆｉｓｔ）
などの薄膜が多層に設けられ念ものであシ、第２−に示
す様に、１２８０−１２５０（ｎｍ）以下の波長を有す
るスペクトル強度を減衰する様、設計されておシ、この
フィルタ】４を通過した光のスペクトル強度け、第３図
に示す様に、温度が低下し念場合においても殆んど増加
しない。C filter 14 is made of alumina CAlt(:)s), silicon oxide (S + Ot), titanium oxide (Fist)
This filter is designed to attenuate the spectral intensity having a wavelength of 1280-1250 (nm) or less, as shown in Section 2. As shown in FIG. 3, the spectral intensity of the light that has passed through the tube decreases in temperature and will hardly increase even in the unlikely event.
以上の結果、本実施例によると、第４図に示す様に温度
依存性の小さい安定した光出力を光ファイバｌａに供給
することができる。As a result of the above, according to this embodiment, a stable optical output with little temperature dependence can be supplied to the optical fiber la, as shown in FIG.
ま念、フィルタ１４は、チップ１１と光７アイ合におい
ても同様の効果が得られることは自明である。It is obvious that the same effect can be obtained when the filter 14 and the optical 7-eye are combined with the chip 11.
以上述べた様に、本発明によると温度依存性の小さい安
定した光出力を光７アイバに供給できる念め信頼性の高
い光通信を行なうことができる。As described above, according to the present invention, it is possible to perform highly reliable optical communication in which stable optical output with little temperature dependence can be supplied to the optical fiber.
第１図は、本発明の実Ｍ 汐ｉ１による光ファイバの結
合を示すＷ、ＦＡ′２ｆ禎は本発明の実施例に係るフィ
ルタの透過率を示す図、第３図は、実施例による放射光
スペクトルの温度特性を示す図、第４スけ実施例による
効果を示す図、第５囚は通常の端面放射型発光ダイオー
ドを示す図、第６図は従来技術の問題点を説明する図、
第７図＃′ｉｎ面放射型発光ダイオードの放射光スペク
トルの温度特性を示す図である。
図において、１けｎ型基鈑、 ２ｒｆｉＰ型電流附止
層、３＃ｔｎ型クラッド層、４け活性層、５けＰ型りラ
ッド周、６けＰ型コンタクトＭ１７け絶縁膜、８け電流
注入窓、９け発光素子部、１０け結合部、１１はチップ
、１２及び１３け球レンズ、１４ばフィルタ、】５け光
７アイバ、１６及び１７１−ｔウィンドである。
スＬＳ’ａ透過率
第 Ｚ 図
置方１りｊｌ＝、、ｒる曹”射光ヌヘ０クトルｔ％五度
特性早 、５ 図
不発［１１１突を例による上古カー遍度考性穿 ４
図
温度（６Ｃ）
流面１１射堀金尤夕′イア−）：グラ呈度苔性早 ６
図
１２００ ｆＺ５ＤＢＯＯ１３５０１４００テ１
ｙ長ｉ′−ｎｗｒ ）
憎Ｉｌ尤スバクト１しめ五度特）匣
乎 ワ 図FIG. 1 is a diagram showing the coupling of optical fibers by the actual Mshio i1 of the present invention, W, FA′2f is a diagram showing the transmittance of the filter according to the embodiment of the present invention, and FIG. A diagram showing the temperature characteristics of the optical spectrum, a diagram showing the effect of the fourth embodiment, a diagram showing the effect of the fourth embodiment, a diagram showing a normal edge-emitting light emitting diode, and a diagram explaining the problems of the conventional technology.
FIG. 7 is a diagram showing the temperature characteristics of the emitted light spectrum of the #'in surface-emitting light emitting diode. In the figure, 1 digit n-type substrate, 2 rfiP type current stop layer, 3#tn type cladding layer, 4 digits active layer, 5 digits P type rad circumference, 6 digits P type contact, 17 digits insulating film, 8 digits current. Input window, 9 light emitting elements, 10 coupling parts, 11 chip, 12 and 13 ball lenses, 14 filter, 5 light 7 eyes, 16 and 171-t windows. LS'a transmittance No. 1
Figure Temperature (6C) Flow surface 11: Glazing degree: Mossy early 6
Figure 1200 fZ5DBOO13501400Te1
y length i'-nwr) hate Il 尤subact 1 closing fifth special) 匣乎wa figure
Claims (1)
れてなる光半導体装置において、該端面放射型発光ダイ
オードと、該光ファイバとの光軸間に、該端面放射型発
光ダイオードの所定の放射光スペクトルよりも短波長側
の放射光スペクトルを減衰するフィルタを有することを
特徴とする光半導体装置。In an optical semiconductor device in which an edge-emitting light-emitting diode and an optical fiber are coupled, a predetermined emitted light spectrum of the edge-emitting light-emitting diode is disposed between the optical axes of the edge-emitting light-emitting diode and the optical fiber. An optical semiconductor device comprising a filter that attenuates a spectrum of emitted light on the shorter wavelength side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62036302A JPS63204670A (en) | 1987-02-19 | 1987-02-19 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62036302A JPS63204670A (en) | 1987-02-19 | 1987-02-19 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63204670A true JPS63204670A (en) | 1988-08-24 |
Family
ID=12466024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62036302A Pending JPS63204670A (en) | 1987-02-19 | 1987-02-19 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63204670A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03273688A (en) * | 1990-03-22 | 1991-12-04 | Eastman Kodak Japan Kk | Light-emitting device |
| JP2010505250A (en) * | 2006-09-29 | 2010-02-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optoelectronic element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS574179A (en) * | 1980-06-09 | 1982-01-09 | Toshiba Corp | Optical nonlinear distortion compensator for semiconductor light-emitting element |
| JPS59139685A (en) * | 1982-12-30 | 1984-08-10 | アセア・アクチ−ボラグ | Temperature correcting device for light emitting element |
-
1987
- 1987-02-19 JP JP62036302A patent/JPS63204670A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS574179A (en) * | 1980-06-09 | 1982-01-09 | Toshiba Corp | Optical nonlinear distortion compensator for semiconductor light-emitting element |
| JPS59139685A (en) * | 1982-12-30 | 1984-08-10 | アセア・アクチ−ボラグ | Temperature correcting device for light emitting element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03273688A (en) * | 1990-03-22 | 1991-12-04 | Eastman Kodak Japan Kk | Light-emitting device |
| JP2010505250A (en) * | 2006-09-29 | 2010-02-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optoelectronic element |
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