JPS63202003A - Manufacture of thin film varistor - Google Patents
Manufacture of thin film varistorInfo
- Publication number
- JPS63202003A JPS63202003A JP62034340A JP3434087A JPS63202003A JP S63202003 A JPS63202003 A JP S63202003A JP 62034340 A JP62034340 A JP 62034340A JP 3434087 A JP3434087 A JP 3434087A JP S63202003 A JPS63202003 A JP S63202003A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- zno
- varistor
- polycrystalline
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000654 additive Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 230000000996 additive effect Effects 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 description 12
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、電子機器の小型化（一応じて、その中の電
子回路に組み込むのに適した薄＠／（リスクの製造方法
に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a manufacturing method for reducing the size of electronic equipment (accordingly, it is suitable for being incorporated into electronic circuits therein). be.
従来、ＩＣやＬＳＩ等の電子機器の電子回路を異常過電
圧から保護するため、印加する電圧が高くなると抵抗が
急激に減少する、ＺｎＯを主成分とし、Ｂｉ２Ｏ３、Ｃ
ｏ２Ｏ３ｌＭｎＯ２、および５ｂ２０３等を副成分とす
るＺｎＯ焼結体バリスタが広く実用化されており、この
ようなバリスタの電圧（Ｖ）−を流（Ｉ）特性はＩ Ｑ
ＣＶ によって表わされ、このα：電圧非直線指数が
大きいほど非オーム性のすぐれた、すなわち過電圧に対
して鋭敏に作動するバリスタとなり、現在のところα−
５０〜１００程度のものが得られている。Conventionally, in order to protect the electronic circuits of electronic devices such as ICs and LSIs from abnormal overvoltage, ZnO as the main component, Bi2O3, C
ZnO sintered varistors containing o2O3lMnO2, 5b203, etc. as subcomponents have been widely put into practical use, and the voltage (V) - current (I) characteristics of such varistors are IQ
CV: The larger the voltage nonlinearity index, the better the non-ohmic property, that is, the more sensitive the varistor is to overvoltage.Currently, α-
About 50 to 100 have been obtained.
この２００焼結体バリスタ（−おける上記のようなバリ
スタ特性の発現は、その焼結体中のＺｎＯ粒子間の粒界
に存在する、前記副成分で形成される電位障壁に起因し
ており、そのため、バリスタの立上り電圧は、電極間に
直列（＝並んでいる粒界の数に比例するので、ＺｎＯ粒
子の粒径と焼結体の厚みによって決定される。The above-mentioned varistor characteristics of this 200 sintered body varistor (-) are due to the potential barrier formed by the above-mentioned subcomponents existing at grain boundaries between ZnO particles in the sintered body, Therefore, the rising voltage of the varistor is proportional to the number of grain boundaries arranged in series between the electrodes, and is therefore determined by the grain size of the ZnO particles and the thickness of the sintered body.
したがって、所定の立上り電圧を有するバリスタを得る
ためには、自動的にその厚みが決ってしまうところから
、民生用として使用される立上り電圧：１００〜２００
ｖを有するＺｎＯ焼結体バリスタでは、通常１ｒｍ程度
の厚みが必要となる。Therefore, in order to obtain a varistor with a predetermined rise voltage, its thickness is automatically determined, so the rise voltage used for consumer use is 100 to 200.
A ZnO sintered body varistor having a thickness of about 1 rm is usually required.
一方、近年では電子部品の小型化、高密度化が進んで、
各種の軽歌小型化された民生用電子機器が開発されるよ
うになって、これらの電子機器の中に組み込まれている
半導体ＩＣ％ＬＳＩを異常過電圧から保護する必要に迫
られているが、上記のＺｎＯ焼結体バリスタでは、立上
り電圧に応じてその厚みが決ってしまうため、小型化に
限界があり、そこでこの小型化の要望に対して、 Ｚｎ
Ｏと、Ｂｉ２Ｏ３、ＣＯ２Ｏ３９Ｍｎ０２ ＋および５
ｂ２０３等のバリア、９として有効な添加物とからなる
ターゲットを用い、高周波スパッタリング法（＝よって
基板上に前記ターゲットと同一組成のアモルファス薄膜
を形成した後、５００℃に加熱処理することにより、前
記薄膜内部でＺｎＯの微結晶化と、それによって形成さ
れたＺｎＯ粒界への前記添加物の偏析とを起こして、前
記アモルファス薄膜を、ＺｎＯ粒界に前記添加物が偏析
したＺｎＯ多結晶嘆とする、約５００ＯＡの厚みで約１
００ｖの立上り電圧を示す薄膜バリスタの製造方法が提
案されている（特開昭５８−８６７０４号公報参照）。On the other hand, in recent years, electronic components have become smaller and more dense.
As various types of miniaturized consumer electronic devices are being developed, there is a growing need to protect the semiconductor IC%LSIs built into these electronic devices from abnormal overvoltage. Since the thickness of the ZnO sintered varistor mentioned above is determined according to the rising voltage, there is a limit to miniaturization.
O, Bi2O3, CO2O39Mn02 + and 5
Using a target consisting of a barrier such as b203 and an effective additive as 9, a high-frequency sputtering method (=therefore, after forming an amorphous thin film with the same composition as the target on the substrate, heat treatment at 500 ° C. Microcrystallization of ZnO occurs inside the thin film and segregation of the additive to the ZnO grain boundaries formed thereby, turning the amorphous thin film into a ZnO polycrystalline structure in which the additive is segregated to the ZnO grain boundaries. 1 with a thickness of about 500OA
A method for manufacturing a thin film varistor exhibiting a rise voltage of 00V has been proposed (see Japanese Patent Laid-Open No. 86704/1983).
しかしながら、上記の薄膜バリスタの製造方法において
は、アモルファス薄膜を熱処理して、それを結晶化する
際に、その薄膜が体積変化を起こして基体から剥離した
り、あるいは薄膜バリスタ中にクラックが生ずるという
問題があった。However, in the above method for manufacturing a thin film varistor, when the amorphous thin film is heat-treated and crystallized, the thin film may change in volume and peel off from the substrate, or cracks may occur in the thin film varistor. There was a problem.
そこで、本発明者等は、このような状況に鑑みて種々研
究を重ねた結果、
Ｂ２Ｏ３等の添加物（以下、単に添加物ともいう）を含
まないＺｎＯ単味のターゲツト材を用いて、スパッタリ
ング法により薄膜を形成すると、この薄膜はアモルファ
ス膜とはならないで、ＺｎＯ単味の多結晶質膜となると
ころに着目して、この薄膜の上に、前記添加物からなる
薄膜を任意の成膜法により形成させた後、これらの薄膜
に熱処理を施すと、前記添加物はＺｎＯ単味の多結晶質
膜中の粒界に拡散、偏析して、 ＺｎＯ薄膜バリスタが
生成し、そして前記ＺｎＯ単味の多結晶質膜は、成膜し
たとき既に結晶質となっているところから、前記熱処理
に際して、従来法でみられるような結晶化に基づく剥離
やクラックを生じないで、健全な薄膜バリスタとなるこ
と、
を見出した。In view of this situation, the inventors of the present invention have conducted various studies, and as a result, the present inventors have succeeded in sputtering using a target material consisting of ZnO alone, which does not contain additives such as B2O3 (hereinafter also simply referred to as additives). When a thin film is formed by this method, this thin film does not become an amorphous film, but becomes a polycrystalline film made of ZnO alone. When these thin films are heat-treated after being formed by the method, the additives diffuse and segregate to the grain boundaries in the polycrystalline ZnO film to form a ZnO thin film varistor, and the ZnO film Aji's polycrystalline film is already crystalline when it is formed, so during the heat treatment, it does not cause peeling or cracking due to crystallization that occurs with conventional methods, and can be used to form a healthy thin film varistor. I discovered what will become.
この発明は、上記知見に基づいて発明されたもので、剥
離やクラックを生じないで基板上に健全なＺｎＯ薄膜バ
リスタを形成できる、ＺｎＯ薄膜バリスタの製造方法を
提供することを目的とし、スパッタリング法を用いて、
基板上にＺｎＯ多結晶質薄膜を形成させ、ついでこのＺ
ｎＯ多結晶質薄膜上に、ＺｎＯバリスタを形成させるの
に有効な添加物の薄膜を形成させた後、これらの薄膜を
熱処理して、前記添加物を前記ＺｎＯ多結晶質薄膜中の
粒界に拡散、偏析させることを特徴とするものである。This invention was invented based on the above knowledge, and aims to provide a method for manufacturing a ZnO thin film varistor that can form a healthy ZnO thin film varistor on a substrate without peeling or cracking. Using,
A ZnO polycrystalline thin film is formed on the substrate, and then this ZnO
After forming a thin film of an additive effective for forming a ZnO varistor on the nO polycrystalline thin film, these thin films are heat-treated to bring the additive to the grain boundaries in the ZnO polycrystalline thin film. It is characterized by diffusion and segregation.
１、スパッタリング法によるＺｎＯ多結晶質薄膜の形成
この発明においては、高周波スパッタリングが好都合に
便用され、これらのスパッタリング法により、通常、Ｚ
ｎＯ焼結体をターゲツト材として、石英ガラス、アルミ
ナ等からなる基板上に、厚さ： ５０００〜２０００Ｏ
ＡのＺｎＯ多結晶質薄膜が形成され、この薄膜を溝成す
るＺｎＯ結晶粒の平均粒径は通常３００〜２０００人で
ある。1. Formation of ZnO polycrystalline thin film by sputtering method In this invention, high frequency sputtering is advantageously used, and these sputtering methods usually
Using the nO sintered body as a target material, it was deposited on a substrate made of quartz glass, alumina, etc. to a thickness of 5000 to 2000O.
A ZnO polycrystalline thin film is formed, and the average grain size of the ZnO crystal grains forming grooves in this thin film is usually 300 to 2000 grains.
２、添加物の薄膜の形成
ＺｎＯ多結晶質薄膜中のＺｎＯ粒界に存在して、この薄
膜にバリスタ特性を付与する添加物としては、従来Ｚｎ
Ｏバリスタにおいて使用されているあらゆる添加物、例
えばＢｉ２Ｏ３＝ Ｃｏ２Ｏ３２Ｍｎ０２．５ｂ２０３
。2. Formation of thin film of additives Conventionally, Zn
Any additives used in O varistors, e.g. Bi2O3 = Co2O32Mn02.5b203
.
Ｂｉ 、 Ｃｒ２Ｏ３、ＮｉＯ等を使用することができ
、これらの添加物からなる薄膜は、上記ＺｎＯ多結晶質
薄膜が基体上に形成された後、前記添加物のいずれか１
種または２種以上からなる焼結体をターゲット材として
、前記第１項で述べたスパッタリング法のいずれかによ
り、あるいはその池の適宜の成膜法、例えば真空蒸着に
より、前記ＺｎＯ多結晶質薄膜上に、通常１００〜６ｏ
ｏｉの厚みに成膜される。Bi, Cr2O3, NiO, etc. can be used, and a thin film made of these additives can be formed by adding any one of the additives after the ZnO polycrystalline thin film is formed on the substrate.
The ZnO polycrystalline thin film is formed by using a seed or a sintered body consisting of two or more types as a target material by any of the sputtering methods described in Section 1 above, or by an appropriate film-forming method such as vacuum evaporation. above, usually 100~6o
A film is formed to a thickness of oi.
３、 熱処理
上述のＺｎＯ多結晶質薄膜と添加物薄膜に熱処理を施す
ことにより、添加物薄膜を構成している添加物は、この
薄膜と隣接しているＺｎＯ多結晶質薄膜中に拡散、偏析
して、そのＺｎＯ多結晶質薄膜中Ｃ二電位障壁を形成し
、それによってＺｎＯ多結晶質薄膜をＺｎＯ薄膜バリス
タに変えるが、このような添加物の拡散、偏析を起こさ
せる熱処理は、一般に、前記２種の薄膜を、加熱炉中、
アルゴンや空気等の雰囲気の下で、温度：４００〜７０
０’Ｃ＋二６０〜３００分間保持することによって、遂
行される。3. Heat treatment By applying heat treatment to the above-mentioned ZnO polycrystalline thin film and additive thin film, the additives constituting the additive thin film are diffused and segregated into the ZnO polycrystalline thin film adjacent to this thin film. This forms a C2 potential barrier in the ZnO polycrystalline thin film, thereby converting the ZnO polycrystalline thin film into a ZnO thin film varistor. However, heat treatment that causes such diffusion and segregation of additives generally The two types of thin films are heated in a heating furnace,
Under an atmosphere such as argon or air, temperature: 400-70
This is accomplished by holding for 60-300 minutes at 0'C+2.
ついで、この発明を実施例によって説明する。 Next, the invention will be explained by way of examples.
実施例１
ターゲツト材と−してＺｎＯ焼結体を、また真空蒸着の
原料として純度：９９．９％の１３ｉ板材を用意し、ま
ず、（Ａｒ ＋ ０２ ） 、ガス雰囲気中で、高周波
スパッタリングにより、第１図のａ）に示されるように
、厚さ：１■の円い石英ガラス基板１上に厚さ＝１）Ｉ
ｍ Ｘ ｌｉ径： ３．ａｍを有するＺｎＯ多結晶質
薄膜２を形成させた後、この薄膜２の上に、真空蒸着に
より厚さ：約２ｏｏｉのＢｉ薄膜３を形成させた。Example 1 A ZnO sintered body was prepared as a target material, and a 13i plate material with a purity of 99.9% was prepared as a raw material for vacuum evaporation. , as shown in Figure 1 a), on a circular quartz glass substrate 1 with a thickness of 1.
m x li diameter: 3. After forming a ZnO polycrystalline thin film 2 having an am content, a Bi thin film 3 having a thickness of about 2 ooi was formed on this thin film 2 by vacuum evaporation.
ついで、基板１上に順次析出形成させた上記薄膜１およ
び２に、加熱炉中Ａｔ雰囲気の下に温度＝５００℃に４
時間加熱保持する熱処理を施して、ＺｎＯ薄膜中の粒界
中にＢｉを拡散、偏析させ、それによってこのＺｎＯ薄
膜にバリスタ特性を与えた。Next, the thin films 1 and 2 deposited sequentially on the substrate 1 were heated at a temperature of 500° C. in a heating furnace under an At atmosphere.
A heat treatment of heating and holding for a period of time was performed to diffuse and segregate Bi into the grain boundaries in the ZnO thin film, thereby imparting varistor properties to the ZnO thin film.
その後、ＺｎＯ薄膜上に残留しているＢｉ薄膜を完全に
除去するため、５％硝酸で洗浄し、水洗し、乾燥した後
、第１図のｂ）−二示されるように、ＺｎＯ薄膜バリス
タ４のまわりに環状のＭ電極５を真空蒸着により形成し
て、バリスタ素子とした。Thereafter, in order to completely remove the Bi thin film remaining on the ZnO thin film, the ZnO thin film varistor 4 was washed with 5% nitric acid, water, and dried, as shown in b)-2 of Fig. 1. An annular M electrode 5 was formed around it by vacuum deposition to form a varistor element.
以上の方法によって５０個のバリスタ素子を作製したと
ころ、前記熱処理によるＺｎＯ薄膜の剥離とクラックは
全く生じなかった。 なお、これらの素子のバリスタ特
性を示す立上り電圧およびα値はそれぞれ９５Ｖおよび
６０であった。When 50 varistor elements were manufactured using the above method, no peeling or cracking of the ZnO thin film occurred due to the heat treatment. Note that the rising voltage and α value indicating the varistor characteristics of these elements were 95 V and 60, respectively.
実施例２
厚さ＝１圏の円い石英基板１上に、真空蒸着により厚さ
＝２μｍのｐｔ電極膜６を形成し、このｐｔ電極嘆６の
上に、実施例１に形成させたのと同様な厚さ：１１Ｉｍ
のＺｎＯ多結晶質薄膜を形成し、さらに、このＺｎＯ薄
膜上に、高周波スパッタリングによって＠厚：３ｏｏｉ
のＢｉ２Ｏ３薄膜を形成した後、これらのＺｎＯ薄膜お
よびＢｉ２Ｏ３薄嘆に、大気中で温度＝６００℃に５時
間加熱保持する熱処理を施して、ＺｎＯ多結晶質薄膜に
バリスタ特性を与え、ついでこのようにして製造された
ＺｎＯ薄膜バリスタ７の上にＭ電極５を真空蒸着により
形成して、第２図に示されるようなバリスタ素子を製造
した。Example 2 A PT electrode film 6 with a thickness of 2 μm was formed on a circular quartz substrate 1 with a thickness of 1 by vacuum evaporation, and on this PT electrode film 6, the same film as in Example 1 was formed. Thickness similar to: 11Im
A ZnO polycrystalline thin film of
After forming a Bi2O3 thin film of An M electrode 5 was formed by vacuum deposition on the ZnO thin film varistor 7 manufactured in the above manner, thereby manufacturing a varistor element as shown in FIG.
以上の方法により５０個のバリスタ素子を作製して、そ
れらのＺｎＯ薄膜の健全性について調査したところ、実
施例１と同様（−１前記熱処理によるＺｎＯ薄膜の剥離
とクラックは全く生じていないことがわかった。Fifty varistor elements were fabricated using the above method, and the soundness of their ZnO thin films was investigated. As in Example 1, (-1) it was found that no peeling or cracking occurred in the ZnO thin film due to the heat treatment. Understood.
なお、上記のような構造を有するバリスタ素子において
は、熱処理後にＢｉ２Ｏ３薄膜が残留していても、バリ
スタ特性を得ることができる。 また、これらの素子の
バリスタ特性を測定したところ、立上り電圧およびα値
はそれぞれ１２Ｖおよび６０であった。 このように立
上り電圧が実施例１と較べて低いのは、ＺｎＯ薄膜中の
ＺｎＯ結晶粒がその薄膜の厚み方向（ユ成長して、その
方向に並んだＺｎＯ結晶粒界の数が比較的少なくなって
いるためであった。Note that in the varistor element having the above structure, even if the Bi2O3 thin film remains after the heat treatment, varistor characteristics can be obtained. Furthermore, when the varistor characteristics of these elements were measured, the rise voltage and α value were 12 V and 60, respectively. The reason why the rising voltage is lower than in Example 1 is that the ZnO crystal grains in the ZnO thin film grow in the thickness direction of the thin film, and the number of ZnO crystal grain boundaries aligned in that direction is relatively small. This was because
以上述べた説明から明らかなように、この発明によると
、クラックや基板からの剥離を生ずることなく、種々の
小型化した電子機器Ｃ二組み込むのに適した健全なＺｎ
Ｏ薄膜バリスタを提供できるという産業上有用な効果が
得られる。As is clear from the above explanation, according to the present invention, healthy Zn suitable for incorporating into various miniaturized electronic devices C2 can be produced without causing cracks or peeling from the substrate.
The industrially useful effect of being able to provide an O thin film varistor is obtained.
＄１図のａ）はこの発明の実施例ζ二おける成膜状態を
示す断面図、第１図のｂ）は前記実施例Ｃ；よって製造
された薄膜バリスタをバリスタ素子として示す断面図、
そして第２図はこの発明の別の実施例によって製造され
た薄膜バリスタをバリスタ素子として示す断面図である
。 図において１・・・石英ガラス基板、 ２・・・
ＺｎＯ多結晶質薄膜。
３・・・Ｂｉ薄模、 ４，７・・・ＺｎＯ薄嘆バ
リスタ。
５・・・Ｍ電極、 ６・・・ｐｔ電極。Figure 1 a) is a cross-sectional view showing the state of film formation in Example ζ2 of the present invention, and b) in Figure 1 is a cross-sectional view showing the thin film varistor manufactured according to Example C as a varistor element.
FIG. 2 is a sectional view showing a thin film varistor manufactured according to another embodiment of the present invention as a varistor element. In the figure, 1... quartz glass substrate, 2...
ZnO polycrystalline thin film. 3... Bi thin pattern, 4,7... ZnO thin varistor. 5...M electrode, 6...pt electrode.
Claims (1)
薄膜を形成させ、ついでこのＺｎＯ多結晶質薄膜上に、
ＺｎＯバリスタを形成させるのに有効な添加物の薄膜を
形成させた後、これらの薄膜を熱処理して、前記添加物
を前記ＺｎＯ多結晶質薄膜中の粒界に拡散、偏析させる
ことを特徴とする、ＺｎＯ多結晶質薄膜中の粒界に前記
添加物が拡散、偏析してなる薄膜バリスタの製造方法。A ZnO polycrystalline thin film is formed on the substrate using a sputtering method, and then on this ZnO polycrystalline thin film,
After forming thin films of additives effective for forming ZnO varistors, these thin films are heat-treated to diffuse and segregate the additives to grain boundaries in the ZnO polycrystalline thin film. A method for manufacturing a thin film varistor in which the additive is diffused and segregated at grain boundaries in a ZnO polycrystalline thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62034340A JPS63202003A (en) | 1987-02-17 | 1987-02-17 | Manufacture of thin film varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62034340A JPS63202003A (en) | 1987-02-17 | 1987-02-17 | Manufacture of thin film varistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63202003A true JPS63202003A (en) | 1988-08-22 |
Family
ID=12411411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62034340A Pending JPS63202003A (en) | 1987-02-17 | 1987-02-17 | Manufacture of thin film varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63202003A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5886702A (en) * | 1981-11-19 | 1983-05-24 | 松下電器産業株式会社 | Method of producing varistor |
-
1987
- 1987-02-17 JP JP62034340A patent/JPS63202003A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5886702A (en) * | 1981-11-19 | 1983-05-24 | 松下電器産業株式会社 | Method of producing varistor |
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