JPS63200345A - Magneto-optical disk - Google Patents
Magneto-optical diskInfo
- Publication number
- JPS63200345A JPS63200345A JP3278887A JP3278887A JPS63200345A JP S63200345 A JPS63200345 A JP S63200345A JP 3278887 A JP3278887 A JP 3278887A JP 3278887 A JP3278887 A JP 3278887A JP S63200345 A JPS63200345 A JP S63200345A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- sensitivity
- magneto
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 40
- 239000011241 protective layer Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000035945 sensitivity Effects 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 11
- 230000007423 decrease Effects 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 150000004763 sulfides Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】 本発明は高感度な光磁気ディスクに関するものである。[Detailed description of the invention] The present invention relates to a highly sensitive magneto-optical disk.
〈従来技術〉
近年、高密度記録方法としてレーザー光によるビット書
き込み法が各種検討されている。中でも光磁気ディスク
は基板上に磁気記録層および保護層等を設けた構造をし
ており、レーザー光によって該記録媒体を局所的に加熱
し、0.1情報を磁化の向きの違いとして書き込み、磁
気光学効果を利用して読み出すというものである。この
方法は穿孔タイプと異なり、書込み、消去の繰返しが可
能なことから書換え型光ディスクと呼ばれ実用化をめざ
して精力的な開発が進められている。<Prior Art> In recent years, various bit writing methods using laser light have been studied as high-density recording methods. Among them, a magneto-optical disk has a structure in which a magnetic recording layer, a protective layer, etc. are provided on a substrate, and the recording medium is locally heated with laser light to write 0.1 information as a difference in the direction of magnetization. It is read using the magneto-optical effect. Unlike the perforated type, this method allows for repeated writing and erasing, so it is called a rewritable optical disk, and active development is underway with the aim of putting it into practical use.
磁気記録層は希土類元素(Gd、Tb、Dyなど)と遷
移金属(Fe、Co)の組合せからなる垂直磁化膜(以
下、磁性層と呼ぶ)を蒸着法あるいはスパッタリング法
などによって基板上に薄膜形成させることによって得ら
れる。The magnetic recording layer is a perpendicularly magnetized film (hereinafter referred to as a magnetic layer) made of a combination of rare earth elements (Gd, Tb, Dy, etc.) and transition metals (Fe, Co) formed on a substrate by vapor deposition or sputtering. obtained by letting
〈発明が解決しようとする問題点〉 しかしながら磁性層単独では、 (1)酸化劣化が極めて早く実用性がない。<Problem that the invention seeks to solve> However, the magnetic layer alone (1) Oxidative deterioration is extremely rapid and impractical.
(2)光磁気効果が十分得られず、再生信号のS/Nが
不十分である。(2) A sufficient magneto-optical effect is not obtained, and the S/N of the reproduced signal is insufficient.
という問題があり、この二点を解決する目的で、磁性層
を適当な屈折率、厚みをもった透明誘電体膜(以下、保
護層と呼ぶ)でサンドインチ構造とすることが一般的に
行われている。この保護層としては、例えば酸化ケイ素
、酸化ジルコニウム、酸化チタン、酸化ビスマスなどの
酸化物あるいは窒化アルミニウム、窒化ケイ素などの窒
化物、硫化亜鉛などの硫化物等、種々の化合物が提案さ
れている。In order to solve these two problems, it is common practice to form the magnetic layer into a sandwich structure with a transparent dielectric film (hereinafter referred to as a protective layer) having an appropriate refractive index and thickness. It is being said. Various compounds have been proposed for this protective layer, such as oxides such as silicon oxide, zirconium oxide, titanium oxide, and bismuth oxide, nitrides such as aluminum nitride and silicon nitride, and sulfides such as zinc sulfide.
しかし・ながら近年、より高速アクセスを目的としてデ
ィスクの回転数を大きくする検討もなされているが、こ
の場合、従来の構造では感度が不足するという問題があ
る。とりわけ保護層として窒化ケイ素、窒化アルミニウ
ムのような熱伝導率の高い材料を用いた場合、この問題
は深刻であり、より高出力の高価なレーザー光源が必要
となってしまう0通常このような場合、媒体感度を向上
させるために磁性層の組成を変更するなどの策がとられ
ているが、この方法ではその磁性層組成の持つ特性が変
わってしまうという欠点がある。However, in recent years, studies have been made to increase the number of rotations of the disk for the purpose of faster access, but in this case, there is a problem that the conventional structure lacks sensitivity. This problem is especially serious when a material with high thermal conductivity, such as silicon nitride or aluminum nitride, is used as the protective layer, and a higher-power, more expensive laser light source is required. In order to improve the medium sensitivity, measures have been taken to change the composition of the magnetic layer, but this method has the disadvantage that the characteristics of the magnetic layer composition change.
上記問題点を考慮しつつ、本発明者らは光磁気媒体の感
度を向上させるべく、種々の検討を行った結果、基板と
保護層の間に適当な厚さのSi層を加えることにより、
感度が大きく向上することを見出し、本発明に到った。Taking the above problems into consideration, the present inventors conducted various studies in order to improve the sensitivity of magneto-optical media, and found that by adding a Si layer of an appropriate thickness between the substrate and the protective layer,
It was discovered that the sensitivity was greatly improved, and the present invention was developed.
すなわち、本発明の目的は高感度な光磁気ディスクを提
供することにある。That is, an object of the present invention is to provide a highly sensitive magneto-optical disk.
〈問題点を解決するための手段〉
本発明は(1)透明基板上に保護層(八)、磁気記録層
、保jlt層(It)を設けたレーザー光による情報の
記録、再生および消去を行う光磁気ディスクにおいて、
透明基板と該保護層(八)の間に厚みが50人を超え、
200Å以下であるSi層を設けたことを特徴とする光
磁気ディスクを提供することにある。<Means for Solving the Problems> The present invention provides (1) a protective layer (8), a magnetic recording layer, and an insulating layer (It) provided on a transparent substrate to record, reproduce, and erase information using a laser beam; In magneto-optical disks,
The thickness between the transparent substrate and the protective layer (8) exceeds 50,
An object of the present invention is to provide a magneto-optical disk characterized by having a Si layer having a thickness of 200 Å or less.
以下本発明について詳述する。The present invention will be explained in detail below.
本発明における光磁気ディスクは基本的に以下の積層構
造を有している。すなわち透明基板/ S i層/保護
層(A)/磁気記録層(以下磁性[)/保護11 (1
1)/金属層である。このうち2つの保護1(A)。The magneto-optical disk according to the present invention basically has the following laminated structure. That is, transparent substrate/Si layer/protective layer (A)/magnetic recording layer (hereinafter referred to as magnetic [)/protection 11 (1
1)/Metal layer. Two of these are protection 1(A).
(B)は同一素材でもよく、また異なる二種以上の材料
の中から組みあわせた複合構造をとることもできる。ま
た最後の金属層はカーエンハンスメント効果を持たせる
ためのものであり、目的、特性に応じては必ずしも必要
としない。(B) may be made of the same material, or may have a composite structure in which two or more different materials are combined. Further, the last metal layer is for providing a car enhancement effect, and is not necessarily required depending on the purpose and characteristics.
本発明に用いられる透明基板としてはガラス、メタアク
リル樹脂、ポリカーボネート樹脂など、複屈折性の小さ
い通常の光磁気ディスク用基板が挙げられる。Examples of the transparent substrate used in the present invention include ordinary substrates for magneto-optical disks having low birefringence, such as glass, methacrylic resin, and polycarbonate resin.
SiNはこの基板上に電子ビーム蒸着、スパッタリング
法などにより形成される。このSiNは屈折率が大きく
、これを設けることにより光の閉じ込め効果が生じ、デ
ィスク媒体としての感度を向上させる性質を持つ反面、
熱伝導率が大きく、逆に感度を低下させる性質も併せも
つ。したがってSi層を設けたときの感度におよぼす効
果は、上記相反効果の和として表わされるため、この膜
厚をいくらにするかが重要となる* stiが薄すぎる
場合は光の閉じ込め効果が小さく、実質上感度向上に役
立たず、また逆に厚すぎる場合は、上記高い熱伝導率お
よびSi自身での光吸収により、感度低下および反射光
量の低下が顕著となる。したがってSiNの厚さは具体
的には50人を超え、200Å以下、好ましくは60〜
180人とする必要がある。この範囲内であればC/N
等を低下させることなく、厚さに応じて感度を変化させ
ることが可能であるが、より具体的にいくらの値にする
かは反射率、感度等の媒体への要求特性等を勘案して上
記範囲内で決定されるべきものである。SiN is formed on this substrate by electron beam evaporation, sputtering, or the like. This SiN has a high refractive index, and its provision creates a light confinement effect, improving the sensitivity of the disk medium.
It has high thermal conductivity and also has the property of reducing sensitivity. Therefore, the effect on sensitivity when a Si layer is provided is expressed as the sum of the above-mentioned reciprocal effects, so the thickness of this film is important. *If the sti is too thin, the light confinement effect will be small; If it is not substantially useful for improving sensitivity, and if it is too thick, the sensitivity and amount of reflected light will be significantly lowered due to the high thermal conductivity and light absorption by Si itself. Therefore, the thickness of SiN is specifically more than 50 and less than 200 Å, preferably 60 to 200 Å.
It is necessary to have 180 people. If within this range, C/N
It is possible to change the sensitivity according to the thickness without reducing the film thickness, etc., but the specific value to be set should be determined by taking into account the required characteristics of the medium such as reflectance and sensitivity. It should be determined within the above range.
本発明に用いられる保護層(^)、(B) としては
、酸化アルミニウム、酸化ジルコニウム、酸化クロム、
酸化チタン、酸化ビスマス、酸化ケイ素などの酸化物、
窒化ケイ素、窒化アルミニウムなどの窒化物、硫化i鉛
、硫化カドミウムなどの硫化物、炭化ケイ素などの炭化
物等が挙げられる。とりわけ既述のように窒化ケイ素(
SiNx) 、窒化アルミニウム(AINx)のような
熱伝導率が高い素材が本発明が有効である。The protective layers (^) and (B) used in the present invention include aluminum oxide, zirconium oxide, chromium oxide,
Oxides such as titanium oxide, bismuth oxide, silicon oxide,
Examples include nitrides such as silicon nitride and aluminum nitride, sulfides such as i-lead sulfide and cadmium sulfide, and carbides such as silicon carbide. In particular, as mentioned above, silicon nitride (
The present invention is effective for materials with high thermal conductivity such as SiNx) and aluminum nitride (AINx).
これら保護層の作製法は蒸着法、スパッタリング法、反
応性スパッタリング法、プラズマCVD法など種々の薄
膜形成技術の中から適宜選択することができる。The method for producing these protective layers can be appropriately selected from various thin film forming techniques such as vapor deposition, sputtering, reactive sputtering, and plasma CVD.
本発明に用いられる磁性層には特に限定はなく、光磁気
ディスクの記録媒体として用いられる通常の希土類元素
(Gd、Tb、Dyなど)と遷移金属(F e + G
o )の組合せが採用できる。これらは通常の合金薄
膜を作る方法で蒸着あるいはスパッタリングによって得
られる。組合せとしては、例えばTbFe、 GdC。The magnetic layer used in the present invention is not particularly limited, and may be made of rare earth elements (Gd, Tb, Dy, etc.) and transition metals (F e + G
o) Combinations can be adopted. These can be obtained by vapor deposition or sputtering using conventional methods for producing alloy thin films. Examples of the combination include TbFe and GdC.
のような三元素系、GdTbFe、 TbFeCoのよ
うな三元素系、GdTbFeCoのような四元素系等が
挙げられる。Examples include three-element systems such as , three-element systems such as GdTbFe and TbFeCo, and four-element systems such as GdTbFeCo.
これら保護層、磁性層の厚さはSi層の厚さに応じてエ
ンハンスメント効果を最良にする所望の値に設定される
が、通常100〜2000人の範囲である。The thickness of these protective layers and magnetic layers is set to a desired value that maximizes the enhancement effect depending on the thickness of the Si layer, but is usually in the range of 100 to 2,000.
金属層は見かけのカー回転角を増大させる目的で設ける
ものであり、必ずしも必要としないが、設ける場合、銅
、アルミニウム、クロムなど反射率の高い金属が好適で
ある。この場合厚さは通常200〜800人の範囲であ
る。The metal layer is provided for the purpose of increasing the apparent Kerr rotation angle, and is not necessarily required, but if provided, metals with high reflectivity such as copper, aluminum, and chromium are suitable. In this case the thickness usually ranges from 200 to 800 people.
〈発明の効果〉
上述のように本発明のディスクは基板と保護層(A)の
間に適当な厚さの5ililをつけることにより、感度
を向上させることができる。ところで、−aに光磁気デ
ィスクを実用に供する場合、取り汲いを容易にする目的
で、上述の積層構造の上に接着剤を介して裏うち、基板
を貼り合わせたり、あるいは両面を使用する目的で上述
の積層構造を二枚向かいあわせて接着剤を介して貼り合
わせたりする方法がとられるが、これらの場合、接着剤
層を通しての熱の逸散による感度低下が避けられず、そ
ういった点からも本発明は特に有効である。<Effects of the Invention> As described above, the sensitivity of the disk of the present invention can be improved by providing an appropriate thickness of 5 il between the substrate and the protective layer (A). By the way, when a magneto-optical disk is put to practical use in -a, for the purpose of making it easier to take it apart, it is necessary to bond the substrate on the above-mentioned laminated structure with an adhesive, or to use both sides. For this purpose, a method is used in which two sheets of the above-mentioned laminated structure are placed face to face and bonded together with an adhesive, but in these cases, a decrease in sensitivity due to heat dissipation through the adhesive layer is unavoidable. The present invention is also particularly effective.
〈実施例〉 以下、実施例を用いて本発明の詳細な説明する。<Example> Hereinafter, the present invention will be explained in detail using Examples.
実施例1
基板としてポリカーボネートを用い、スパッタリング法
によりSk[、反応性スパックリング法によりSiNx
層を順次成膜した。膜厚は31層が60人、80人、1
50人の3種類、5iNXjiはエンハンスメント効果
を最大にするよう前記81層膜厚に対してそれぞれ50
0人、400人、250人とした。Example 1 Polycarbonate was used as a substrate, Sk[ was formed by sputtering method, and SiNx was formed by reactive sputtering method.
The layers were deposited sequentially. The film thickness is 31 layers, 60 people, 80 people, 1
The three types of 5iNXji, 5iNXji, are 50% each for the 81 layer thickness to maximize the enhancement effect.
The numbers were 0, 400, and 250.
これらの保護層上に磁性層として約900人のTbFe
Co Nをスパッタリング法により作成した。更にこの
上に反応性スパッタリング法により、SiNx保護層を
約850人の膜厚で成膜し4層構造の記録媒体とした。Approximately 900 TbFe layers are applied as a magnetic layer on these protective layers.
Co N was created by sputtering method. Furthermore, a SiNx protective layer was formed on this layer to a thickness of about 850 mm by reactive sputtering to obtain a recording medium with a four-layer structure.
これらの記録媒体に回転数1800rpm、記録位置半
径30間、記録周波数I MHzの条件で記録を行った
場合の最適記録パワー(第2高調波が最小となる記録パ
ワー)及び再生時のC/Nを表1に示す。Optimal recording power (recording power that minimizes the second harmonic) and C/N during playback when recording is performed on these recording media at a rotation speed of 1800 rpm, a recording position radius of 30, and a recording frequency of I MHz. are shown in Table 1.
比較例 1
実施例1における31層のないものとして、ポリカーボ
ネート基板に直接SiNx層を反応性スパッタリング法
にて約850人の膜厚で形成したこと以外は実施例1と
同様にして記録媒体を作成した。Comparative Example 1 A recording medium was produced in the same manner as in Example 1, except that instead of having the 31 layer in Example 1, a SiNx layer was formed directly on the polycarbonate substrate by reactive sputtering to a thickness of approximately 850 mm. did.
比較例 2
実施例1における5ill膜厚の厚すぎる例として、ポ
リカーボネート基板上にスパッタリング法でSi層30
0人、反応性スパッタリング法で5iNIIIil 1
00人を順次形成したこと以外は実施例1と同様にして
記録媒体を作成した。Comparative Example 2 As an example of the 5ill film thickness in Example 1 being too thick, a Si layer 30 was formed on a polycarbonate substrate by sputtering.
0 people, 5iNIIIil 1 by reactive sputtering method
A recording medium was produced in the same manner as in Example 1 except that 00 persons were formed one after another.
これら比較例の記録媒体についても実施例1と同様に記
録再生テストを行った。結果を表1に示す。Recording and reproducing tests were also conducted on the recording media of these comparative examples in the same manner as in Example 1. The results are shown in Table 1.
表1に示した結果から明らかなように、比較例1のSi
Nを設けないものに比べて実施例1のSiNを設けたも
のは、記録に必要な最適パワーがSiNの膜厚の増加に
伴って減少、すなわち記録感度の向上が見られる。また
この範囲内ではC/Nの変化はほとんど認められない。As is clear from the results shown in Table 1, the Si of Comparative Example 1
Compared to the case where N is not provided, in the case where SiN of Example 1 is provided, the optimum power required for recording decreases as the SiN film thickness increases, that is, the recording sensitivity is improved. Further, within this range, almost no change in C/N is observed.
一方、Si層の膜厚を300人にまで厚くした比較例2
のものは反射率が5%以下となり十分なフォーカシング
及びトラッキングが行えず、記録・再生が不可能であっ
た。On the other hand, Comparative Example 2 in which the thickness of the Si layer was increased to 300
With those, the reflectance was less than 5%, and sufficient focusing and tracking could not be performed, making recording and reproduction impossible.
表 1Table 1
Claims (1)
を設けたレーザー光による情報の記録、再生および消去
を行う光磁気ディスクにおいて、透明基板と該保護層(
A)の間に厚みが50Åを超え、200Å以下であるS
i層を設けたことを特徴とする光磁気ディスクProtective layer (A), magnetic recording layer, protective layer (B) on transparent substrate
In a magneto-optical disk that records, reproduces and erases information using a laser beam provided with a transparent substrate and the protective layer (
S having a thickness of more than 50 Å and less than 200 Å during A)
Magneto-optical disk characterized by having an i-layer
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3278887A JPS63200345A (en) | 1987-02-16 | 1987-02-16 | Magneto-optical disk |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3278887A JPS63200345A (en) | 1987-02-16 | 1987-02-16 | Magneto-optical disk |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63200345A true JPS63200345A (en) | 1988-08-18 |
Family
ID=12368587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3278887A Pending JPS63200345A (en) | 1987-02-16 | 1987-02-16 | Magneto-optical disk |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63200345A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6129437A (en) * | 1984-07-20 | 1986-02-10 | Canon Inc | Photomagnetic recording medium |
JPS62172548A (en) * | 1986-01-23 | 1987-07-29 | Nec Corp | Photomagnetic recording medium |
-
1987
- 1987-02-16 JP JP3278887A patent/JPS63200345A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6129437A (en) * | 1984-07-20 | 1986-02-10 | Canon Inc | Photomagnetic recording medium |
JPS62172548A (en) * | 1986-01-23 | 1987-07-29 | Nec Corp | Photomagnetic recording medium |
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