JPS6320016B2 - - Google Patents
Info
- Publication number
- JPS6320016B2 JPS6320016B2 JP21850084A JP21850084A JPS6320016B2 JP S6320016 B2 JPS6320016 B2 JP S6320016B2 JP 21850084 A JP21850084 A JP 21850084A JP 21850084 A JP21850084 A JP 21850084A JP S6320016 B2 JPS6320016 B2 JP S6320016B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- transparent electrode
- light emitting
- light
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000013307 optical fiber Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 18
- 239000000969 carrier Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は半導体測定装置、特にシリコン・ウエ
ハ中の少数キヤリヤの寿命の測定装置に関する。DETAILED DESCRIPTION OF THE INVENTION FIELD OF APPLICATION OF THE INVENTION The present invention relates to a semiconductor measurement device, and more particularly to a device for measuring the lifetime of minority carriers in silicon wafers.
従来、半導体中の少数キヤリヤの寿命は、シリ
コン・ウエハにオーミツク接触を有する電極を取
り付け、キセノン・ランプ光をインパルス照射し
て、出力信号の減衰を測定することによつて求め
ていた（JIS規格H0604、1978）。この方法は接触
法であり、抜取り検査にしか向かない。また測定
をオン・ラインで行なうことができない。
Conventionally, the lifetime of a minority carrier in a semiconductor was determined by attaching an electrode with ohmic contact to a silicon wafer, irradiating it with impulse light from a xenon lamp, and measuring the attenuation of the output signal (JIS standard). H0604, 1978). This method is a contact method and is suitable only for sampling inspections. Also, measurements cannot be performed on-line.
他方、非接触で測定する方法として、光を照射
してキヤリヤを注入し、さらにマイクロ波を当
て、その吸収の時間的応答から、少数キヤリヤの
寿命を知る方法を挙げることができる。しかしな
がら、この方法は、高価で複雑なマイクロ波発信
機、受波器、その他を必要とし、装置全体が複雑
でかつ高価となるという欠点がある。 On the other hand, as a non-contact measurement method, there is a method in which carriers are injected by irradiating light, microwaves are further applied, and the lifetime of minority carriers can be determined from the time response of absorption. However, this method has the disadvantage that it requires expensive and complicated microwave transmitters, receivers, etc., making the entire device complicated and expensive.
本発明の目的は、したがつて、非接触でシリコ
ン・ウエハ中の少数キヤリヤの寿命を測定するた
めの、簡単で安価な半導体測定装置を提供するこ
とである。
The object of the invention is therefore to provide a simple and inexpensive semiconductor measuring device for contact-free determination of the lifetime of minority carriers in silicon wafers.
上記目的を達成するために、本発明による半導
体測定装置は、測定しようとするシリコン・ウエ
ハを載置する、一方の電極の役をする架台と、上
記架台の上に載置されたシリコン・ウエハの上に
それと容量結合するように設けられた透明電極
と、一端が上記透明電極を介して上記シリコン・
ウエハと対向するように設けられた複数個の光学
フアイバと、上記複数個の光学フアイバの他端に
設けられた発光ダイオードと、上記発光ダイオー
ドを所定の順序にしたがつて順次発光させるため
の制御回路と、上記透明電極に発生した電位を検
出するための検出器とから成り、光照射に伴つて
生じる光起動力を上記透明電極のシリコン・ウエ
ハとの容量結合による電位の変化を検出すること
を要旨とする。
In order to achieve the above object, a semiconductor measuring device according to the present invention includes a pedestal serving as one electrode on which a silicon wafer to be measured is placed, and a silicon wafer placed on the pedestal. A transparent electrode is provided on top of the transparent electrode to be capacitively coupled thereto, and one end is connected to the silicon layer through the transparent electrode.
A plurality of optical fibers provided to face the wafer, a light emitting diode provided at the other end of the plurality of optical fibers, and control for sequentially causing the light emitting diodes to emit light in a predetermined order. It consists of a circuit and a detector for detecting the potential generated in the transparent electrode, and detects the change in potential due to capacitive coupling of the transparent electrode with the silicon wafer and the optical activation force generated due to light irradiation. The gist is:
本発明によれば、電位の変化を非接触で捕え、
しかも光学フアイバでスポツト照射するので、少
数キヤリヤの寿命を分布として測定することがで
きる。さらに、光源として発光ダイオードを用い
るので、電子回路によつて簡単に光変調すること
が可能であり、測定系に最適な変調周波数を自由
に選択することができる。さらに、発光ダイオー
ドから成る光源は小型で応答が速いので、電子ス
イツチにより多数個の発光ダイオードを順次切り
換え、走査することができ、寿命の分布を短時間
にかつ極めて簡単に行なうことができる。 According to the present invention, changes in potential are captured without contact,
Furthermore, since spot irradiation is performed using an optical fiber, the lifetime of minority carriers can be measured as a distribution. Furthermore, since a light emitting diode is used as a light source, it is possible to easily modulate the light using an electronic circuit, and the optimum modulation frequency for the measurement system can be freely selected. Furthermore, since the light source made of light emitting diodes is small and has a quick response, it is possible to sequentially switch and scan a large number of light emitting diodes using an electronic switch, making it possible to perform life distribution very easily and in a short time.
以下に、付図を参照しながら、実施例を用いて
本発明を一層詳細に説明するけれども、それらは
例示に過ぎず、本発明の枠を越えることなしにい
ろいろの変形や改良があり得ることは勿論であ
る。
Hereinafter, the present invention will be explained in more detail using examples with reference to the accompanying drawings, but these are merely illustrative, and it is understood that various modifications and improvements may be made without going beyond the scope of the present invention. Of course.
第１図は、シリコン・ウエハ１を紙面に垂直な
方向には機械的に移動させ、紙面に平行な方向に
は光学フアイバを配置することによつて走査を行
なう、本発明による半導体測定装置の構成を示す
ブロツク図である。移動架台２は金属で構成さ
れ、接地電極の役も兼ね、シリコン・ウエハ１は
この上に真空チヤツクで固定される。光学フアイ
バ４の一端は発光ダイオード３と対向するように
設けられている。光学フアイバ４の他端はアレー
を形成し、その上にIn2O3等のネサ膜で構成され
る透明電極５が設けられている。電源８から制御
回路９を介して所定の順序にしたがつて発光ダイ
オード３を順次発光させ、その光照射に伴つて生
じる光起電力の変化が前置増幅器６および位相検
出器７によつて検出される。 FIG. 1 shows a semiconductor measuring device according to the present invention, which performs scanning by mechanically moving a silicon wafer 1 in a direction perpendicular to the plane of the paper and by arranging an optical fiber in a direction parallel to the plane of the paper. FIG. 2 is a block diagram showing the configuration. The movable pedestal 2 is made of metal and also serves as a ground electrode, and the silicon wafer 1 is fixed thereon by a vacuum chuck. One end of the optical fiber 4 is provided to face the light emitting diode 3. The other end of the optical fiber 4 forms an array, on which a transparent electrode 5 made of a Nesa film such as In 2 O 3 is provided. The light emitting diodes 3 are caused to emit light sequentially in a predetermined order from a power source 8 via a control circuit 9, and changes in photovoltaic force caused by the light irradiation are detected by a preamplifier 6 and a phase detector 7. be done.
本発明による半導体測定装置の動作はつぎのよ
うにして行なわれる。制御回路９によつて発光ダ
イオード３は、光学フアイバ４のシリコン・ウエ
ハ１と対向する方の端から光が紙面に平行な方向
に逐次発生するような順序に発光させられ、その
ようにして一次元走査が行なわれる。光学フアイ
バ４は点光源としてシリコン・ウエハ１を照射
し、微小な領域に起電力を発生させる。光は交流
変調されており、透明電極５がシリコン・ウエハ
１から離れていても、上記起電力は容量結合によ
つて容易に外部に取り出される。容量結合を介
し、位相検出器７で検出される信号の位相θは、
電源８の出力に対して次のようになる。 The semiconductor measuring device according to the present invention operates as follows. The light emitting diodes 3 are caused to emit light by the control circuit 9 in such a sequence that light is emitted successively from the end of the optical fiber 4 facing the silicon wafer 1 in a direction parallel to the plane of the paper, and in this way An original scan is performed. The optical fiber 4 irradiates the silicon wafer 1 as a point light source and generates an electromotive force in a minute area. The light is alternating current modulated, and even if the transparent electrode 5 is away from the silicon wafer 1, the electromotive force can be easily extracted to the outside by capacitive coupling. The phase θ of the signal detected by the phase detector 7 through capacitive coupling is
The output of the power supply 8 is as follows.
θ＝θ0＋１／２tan-1（−2πfτ） ……(1)
ここで、θ0は接合インピーダンスや結合の静電
容量などの測定系から生じる位相変化分、ｆは発
光ダイオードの断続周波数、また、τはウエハの
少数キヤリヤ寿命である。θ0は波長の短い光を用
いて予め求めておけば、(1)式からτの変化がθの
変化として得られる。すなわち、電源８の電圧と
信号電圧との位相差を位相検出器で測定すれば、
シリコン・ウエハ中の少数キヤリヤの寿命の値は
非接触で測定できることになる。架台２は紙面に
垂直な方向に移動させられ、電気的に行なわれる
一次元走査とあわせて二次元の走査が行なわれ
る。θ=θ 0 +1/2tan -1 (-2πfτ) ...(1) Here, θ 0 is the phase change caused by the measurement system such as junction impedance and coupling capacitance, f is the intermittent frequency of the light emitting diode, Also, τ is the minority carrier lifetime of the wafer. If θ 0 is determined in advance using light with a short wavelength, a change in τ can be obtained as a change in θ from equation (1). That is, if the phase difference between the voltage of the power supply 8 and the signal voltage is measured with a phase detector,
The lifetime value of minority carriers in silicon wafers can be measured without contact. The pedestal 2 is moved in a direction perpendicular to the plane of the paper, and two-dimensional scanning is performed in addition to electrical one-dimensional scanning.
第２図は光学フアイバのシリコン・ウエハと対
向する方の端をモザイツク状に配置し、機械的に
行なわれる走査をなくした実施例を示す。この実
施例においては、走査はすべてエレクトロニツク
スによつて行なわれるので、装置は簡単となり、
安価に構成される。 FIG. 2 shows an embodiment in which the ends of the optical fibers facing the silicon wafer are arranged in a mosaic pattern, eliminating mechanical scanning. In this embodiment, all scanning is done by electronics, so the device is simple and
Configured inexpensively.
以上説明したように、本発明によれば、非接触
でシリコン・ウエハ中の少数キヤリヤの寿命を測
定する、簡単で安価な半導体測定装置を得ること
ができる。
As described above, according to the present invention, it is possible to obtain a simple and inexpensive semiconductor measuring device that non-contactly measures the lifetime of minority carriers in a silicon wafer.
第１図は本発明の一実施の態様における半導体
測定装置の構成を示すブロツク図、第２図は本発
明による、走査をすべてエレクトロニツクスによ
つて行なう実施の態様における、光学フアイバの
シリコン・ウエハと対向する方の端の平面図であ
る。
１……シリコン・ウエハ、２……架台、３……
発光ダイオード、４……光学フアイバ、５……透
明電極、６……前置増幅器、７……位相検出器、
８……電源、９……制御回路。
FIG. 1 is a block diagram showing the configuration of a semiconductor measuring device according to an embodiment of the present invention, and FIG. 2 is a block diagram showing the structure of a semiconductor measuring device according to an embodiment of the present invention in which scanning is performed entirely by electronics. FIG. 3 is a plan view of the end facing the wafer. 1... Silicon wafer, 2... Mount, 3...
Light emitting diode, 4... Optical fiber, 5... Transparent electrode, 6... Preamplifier, 7... Phase detector,
8...Power supply, 9...Control circuit.
Claims (1)
る一方の電極の役をする架台と、上記架台の上に
載置されたシリコン・ウエハの上にそれと容量結
合するように設けられた透明電極と、一端が上記
透明電極を介して上記シリコン・ウエハと対向す
るように設けられた複数個の光学フアイバと、上
記複数個の光学フアイバの他端に設けられた発光
ダイオードと、上記発光ダイオードを所定の順序
にしたがつて順次発光させるための制御回路と、
上記透明電極の電位を検出するための検出器とか
ら成ることを特徴とする半導体測定装置。1. A pedestal serving as one electrode on which the silicon wafer to be measured is placed; a transparent electrode provided on the silicon wafer placed on the pedestal so as to be capacitively coupled thereto; A plurality of optical fibers are provided such that one end thereof faces the silicon wafer through the transparent electrode, a light emitting diode is provided at the other end of the plurality of optical fibers, and the light emitting diode is connected to a predetermined position. a control circuit for sequentially emitting light in accordance with the order;
A semiconductor measuring device comprising: a detector for detecting the potential of the transparent electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21850084A JPS60100449A (en) | 1984-10-19 | 1984-10-19 | Semiconductor measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21850084A JPS60100449A (en) | 1984-10-19 | 1984-10-19 | Semiconductor measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60100449A JPS60100449A (en) | 1985-06-04 |
| JPS6320016B2 true JPS6320016B2 (en) | 1988-04-26 |
Family
ID=16720899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21850084A Granted JPS60100449A (en) | 1984-10-19 | 1984-10-19 | Semiconductor measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60100449A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697248A (en) * | 1992-09-16 | 1994-04-08 | Shin Etsu Handotai Co Ltd | Life time measuring device and measurement therewith |
| CN108762316A (en) * | 2018-06-13 | 2018-11-06 | 华北电力大学 | A kind of photoelectric sensor, solar energy heating control system and method |
-
1984
- 1984-10-19 JP JP21850084A patent/JPS60100449A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60100449A (en) | 1985-06-04 |
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