JPS6319866A - Rectifying element - Google Patents
Rectifying elementInfo
- Publication number
- JPS6319866A JPS6319866A JP61164199A JP16419986A JPS6319866A JP S6319866 A JPS6319866 A JP S6319866A JP 61164199 A JP61164199 A JP 61164199A JP 16419986 A JP16419986 A JP 16419986A JP S6319866 A JPS6319866 A JP S6319866A
- Authority
- JP
- Japan
- Prior art keywords
- redox
- rectifying element
- film
- substance
- neutral red
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PGSADBUBUOPOJS-UHFFFAOYSA-N neutral red Chemical compound Cl.C1=C(C)C(N)=CC2=NC3=CC(N(C)C)=CC=C3N=C21 PGSADBUBUOPOJS-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 10
- 229950003937 tolonium Drugs 0.000 claims abstract description 8
- HNONEKILPDHFOL-UHFFFAOYSA-M tolonium chloride Chemical compound [Cl-].C1=C(C)C(N)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 HNONEKILPDHFOL-UHFFFAOYSA-M 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims description 26
- 125000002524 organometallic group Chemical group 0.000 claims description 3
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical group C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 claims description 2
- 235000000177 Indigofera tinctoria Nutrition 0.000 claims description 2
- 150000004303 annulenes Chemical class 0.000 claims description 2
- 229940097275 indigo Drugs 0.000 claims description 2
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 claims description 2
- RSAZYXZUJROYKR-UHFFFAOYSA-N indophenol Chemical compound C1=CC(O)=CC=C1N=C1C=CC(=O)C=C1 RSAZYXZUJROYKR-UHFFFAOYSA-N 0.000 claims description 2
- 229960000907 methylthioninium chloride Drugs 0.000 claims description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical group N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000004032 porphyrins Chemical class 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 1
- 150000002211 flavins Chemical class 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000000049 pigment Substances 0.000 claims 1
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 1
- SOUHUMACVWVDME-UHFFFAOYSA-N safranin O Chemical compound [Cl-].C12=CC(N)=CC=C2N=C2C=CC(N)=CC2=[N+]1C1=CC=CC=C1 SOUHUMACVWVDME-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 20
- 230000027756 respiratory electron transport chain Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 108090000623 proteins and genes Proteins 0.000 description 5
- 102000004169 proteins and genes Human genes 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 3
- 230000033116 oxidation-reduction process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 108091006149 Electron carriers Proteins 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- KIUKXJAPPMFGSW-DNGZLQJQSA-N (2S,3S,4S,5R,6R)-6-[(2S,3R,4R,5S,6R)-3-Acetamido-2-[(2S,3S,4R,5R,6R)-6-[(2R,3R,4R,5S,6R)-3-acetamido-2,5-dihydroxy-6-(hydroxymethyl)oxan-4-yl]oxy-2-carboxy-4,5-dihydroxyoxan-3-yl]oxy-5-hydroxy-6-(hydroxymethyl)oxan-4-yl]oxy-3,4,5-trihydroxyoxane-2-carboxylic acid Chemical compound CC(=O)N[C@H]1[C@H](O)O[C@H](CO)[C@@H](O)[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@H](O[C@H]2[C@@H]([C@@H](O[C@H]3[C@@H]([C@@H](O)[C@H](O)[C@H](O3)C(O)=O)O)[C@H](O)[C@@H](CO)O2)NC(C)=O)[C@@H](C(O)=O)O1 KIUKXJAPPMFGSW-DNGZLQJQSA-N 0.000 description 1
- WFTANRQHHUQOIH-UHFFFAOYSA-N 1-ethenyl-10h-phenothiazine Chemical compound S1C2=CC=CC=C2NC2=C1C=CC=C2C=C WFTANRQHHUQOIH-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- ADAUKUOAOMLVSN-UHFFFAOYSA-N gallocyanin Chemical compound [Cl-].OC(=O)C1=CC(O)=C(O)C2=[O+]C3=CC(N(C)C)=CC=C3N=C21 ADAUKUOAOMLVSN-UHFFFAOYSA-N 0.000 description 1
- 229920002674 hyaluronan Polymers 0.000 description 1
- 229960003160 hyaluronic acid Drugs 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 methyl capri blue Chemical compound 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- OARRHUQTFTUEOS-UHFFFAOYSA-N safranin Chemical compound [Cl-].C=12C=C(N)C(C)=CC2=NC2=CC(C)=C(N)C=C2[N+]=1C1=CC=CC=C1 OARRHUQTFTUEOS-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、集積回路分野における整流素子に関するも
ので、酸化還元物質を該素子の構成材料として用いるこ
とにより、そのサイズを分子レベルの超微細な大きさく
数十〜数百人）に近づけることができ、高密度、高速化
を図ることができるようにしたものである。[Detailed Description of the Invention] [Field of Industrial Application] This invention relates to a rectifying element in the field of integrated circuits, and by using a redox substance as a constituent material of the element, the size of the rectifying element can be reduced to ultra-fine size at the molecular level. It is designed to be able to accommodate large numbers of people (from several tens to hundreds of people), and to achieve high density and high speed.
従来、集積回路に用いられている整流素子としては、第
５図に示すＭ ＯＳ構造のものがあった。Conventionally, a rectifying element used in an integrated circuit has a MOS structure as shown in FIG.
図において、１１はｐ形シリコン基板、１２はｎ影領域
、１３はｐ影領域、１４はｎ影領域、１５は５ｉｎ２膜
、１６．１７は電極であり、これら２つの電極１６．１
７間でｐ−ｎ接合（ｐ影領域１３−ｎ影領域１４接合）
が形成され、これにより整流特性が実現されている。In the figure, 11 is a p-type silicon substrate, 12 is an n-shade region, 13 is a p-shade region, 14 is an n-shade region, 15 is a 5in2 film, 16.17 is an electrode, and these two electrodes 16.1
p-n junction between 7 (p shadow area 13 - n shadow area 14 junction)
is formed, thereby realizing rectifying characteristics.
従来のＭＯ３構造の整流素子は以上のように構成されて
いるため、微細加工が可能であり、現在では上記構造の
整流素子あるいはこれとｉ（以の構造のトランジスタ素
子を用いたＬＳＩとして、２５６にビットＬＳＩが実用
化されている。Since the conventional MO3 structure rectifying element is configured as described above, microfabrication is possible, and at present, the rectifying element with the above structure or this and i (as an LSI using a transistor element with the following structure), 256 Bit LSI has been put into practical use.
ところで、集積回路のメモリ容量と演算速度を上昇させ
るには、素子そのものの微細化が不可欠であるが、Ｓｉ
を用いる素子では０．２μｍ程度の超微細パターンで電
子の平均自由行程と素子サイズとがほぼ等しくなり、素
子の独立性が保たれなくなるという限界を抱えている。Incidentally, in order to increase the memory capacity and operation speed of integrated circuits, it is essential to miniaturize the elements themselves, but Si
In devices using ultra-fine patterns of about 0.2 μm, the mean free path of electrons becomes almost equal to the device size, which has the limitation that independence of the devices cannot be maintained.
このように、日々発展を続けているシリコンテクノロジ
ーも、微細化の点ではいずれは壁に突きあたることが予
想され、新しい原理に基づく電気回路素子であって０．
２μｍの壁を破ることのできるものが求められている。In this way, silicon technology, which continues to develop day by day, is expected to eventually hit a wall in terms of miniaturization, and electric circuit elements based on new principles are 0.
There is a need for something that can break through the 2 μm wall.
この発明は、かかる状況に鑑みてなされたもので、酸化
還元物質を電気回路素子の構成材料として用いることに
より、そのサイズを分子レベルの超微細な大きさまで近
づけることのできる電気回路素子を、特にそのうちの整
流素子を得ることを目的とする。The present invention has been made in view of the above circumstances, and particularly aims to create an electric circuit element whose size can be brought close to ultra-fine size at the molecular level by using a redox substance as a constituent material of the electric circuit element. The purpose is to obtain a rectifying element among them.
ところで、生体内には、電子を定められた方向へ運ぶ電
子伝達能を有する蛋白質（以下、電子伝達蛋白質と記す
）が複数種類存在しており、該電子伝達蛋白質は、例え
ば生体膜中に一定の配向性をもって埋め込まれ、分子間
で電子伝達が起こるように特異的な分子間配置をとって
いる。By the way, in living organisms, there are multiple types of proteins (hereinafter referred to as electron transfer proteins) that have the ability to transfer electrons in a predetermined direction. It is embedded with a specific orientation, and has a specific intermolecular arrangement so that electron transfer occurs between molecules.
この電子伝達蛋白質は、電子伝達時に酸化還元（レドッ
クス）反応を伴い、各電子伝達蛋白質のレドックス電位
の負の準位から正の順位へと電子を流すことができるも
のであり、これを利用すれば電子の動きを分子レベルで
制御することができると考えられる。These electron transfer proteins involve an oxidation-reduction (redox) reaction during electron transfer, allowing electrons to flow from the negative level of the redox potential of each electron transfer protein to the positive level. It is thought that the movement of electrons can be controlled at the molecular level.
また、最近の知見によれば、生体内に存在している電子
伝達蛋白質以外の電子伝達物質を組み合わせて電子伝達
が可能な電子伝達複合体を形成することが可能であるこ
とが示されている。Furthermore, recent findings indicate that it is possible to form an electron transfer complex capable of electron transfer by combining electron transfer substances other than electron transfer proteins that exist in living organisms. .
従って、適当なレドックス電位を持つ電子伝達物質を２
種類（Ａ及びＢ）用い、Ａ−Ｂと２層接着接合すれば、
それらのレドックス電位の差異を利用して整流特性を生
ずる接合を形成できると考えられる。本件発明者はこの
ことに着目してこの発明を創作したものである。Therefore, if an electron carrier with an appropriate redox potential is
If you use types (A and B) and bond two layers with A-B,
It is thought that it is possible to form a junction that produces rectifying characteristics by utilizing the difference in their redox potentials. The present inventor created this invention by paying attention to this fact.
そこで本発明に係る整流素子は、第１の酸化還元物質で
作成された第１酸化還元物質膜と、上記第１酸化還元物
質のレドックス電位と異なるレドックス電位を有する第
２の酸化還元物質で作成され上記第１酸化還元物質膜に
接着接合された第２酸化還元物質膜と、それぞれ上記第
１．第２酸化還元物質膜に電気的に接続される第１．第
２の電極とを設けて構成したものである。Therefore, the rectifying element according to the present invention is made of a first redox substance film made of a first redox substance and a second redox substance having a redox potential different from the redox potential of the first redox substance. and a second redox material film adhesively bonded to the first redox material film; The first oxide film is electrically connected to the second redox material film. It is configured by providing a second electrode.
この発明においては、レドックス電位の異なる少なくと
も２種類の酸化還元物質により整流特性を発生させる。In this invention, rectification characteristics are generated by at least two types of redox substances having different redox potentials.
即ち、第４図（ａ）、 （ｂｌのＡ−Ｂ型酸化還元物質
複合体の模式図とそのレドックス電位の関係を用いて説
明すると、異なるレドックス電位を有する２つの酸化還
元物質Ａ、Ｂを接合してなる複合体は、電子は、図中実
線矢印で示すようにレドックス電位の負の準位から正の
準位へは容易に流れるが、逆方向（図中破線矢印方向）
へは流れにくく整流特性を呈し、この複合体を用いるこ
とによりｎ型半導体とｐ型半導体とを接合してなるｐ−
ｎ接合と類似の性質を示す整流素子を得ることができる
。That is, to explain using the schematic diagram of the A-B type redox substance complex shown in FIG. In the composite formed by joining, electrons easily flow from the negative level of the redox potential to the positive level as shown by the solid line arrow in the figure, but in the opposite direction (in the direction of the broken line arrow in the figure)
By using this composite, p- type semiconductor and p-type semiconductor are joined.
A rectifying element exhibiting properties similar to those of an n-junction can be obtained.
以下、この発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図＋ｄ）はこの発明の一実施例による整流素子を示
し、図において、ｌは絶縁特性を持つ基板、２ａ、
２ｂはそれぞれ基板１上に所定の間隔を置いて設けられ
た電極、３は酸化還元物質膜であるニュートラルレッド
膜、４は同じくトルイジンブルー膜である。またニュー
トラルレッド、トルイジンブルーのレドックス電位はそ
れぞれ一３２５ｍＶ、＋１１５ｍＶである。FIG. 1+d) shows a rectifying element according to an embodiment of the present invention, in which l is a substrate with insulating properties, 2a,
2b are electrodes provided on the substrate 1 at predetermined intervals, 3 is a neutral red film which is a redox substance film, and 4 is also a toluidine blue film. Further, the redox potentials of neutral red and toluidine blue are -325 mV and +115 mV, respectively.
次に、本実施例の製造方法を第１図（ａ＋〜（ｄｌに基
づいて説明する。Next, the manufacturing method of this embodiment will be explained based on FIG. 1 (a+ to (dl).
まず、第１図（８１に示すように、基板１上に電橋２ａ
、２ｂを形成する。次に第１図（ｂ）に示すように、上
記基板１上に上記電極２ａ、２ｂを覆ってニュートラル
レッド膜３を形成する。ここでこの膜３の形成には、酸
化還元物質からなる膜を基板上に形成する方法であると
ころの下記■〜■の方法
すなわち、
■ 官能基をもった化合物を基板表面に不可逆的に化学
・物理吸着させる方法（第２図（ａ）又は（ｂ））■
基板表面の酸化物層を利用する方法即ち、まずアルカリ
処理により電極表面に一〇Ｈ基を作り、これと有機ケイ
素化合物であるクロロシランやアルコキシシランとの反
応により、−０−３ｉ−結合を通じて、官能基を固定す
る方法（第２図（Ｃ））
■ カーボン基板表面に適当な化学的処理を施し、化学
結合可能な−ＣＯＯＨ基、−ＮＨ２基。First, as shown in FIG. 1 (81), place the electric bridge 2a on the board 1.
, 2b. Next, as shown in FIG. 1(b), a neutral red film 3 is formed on the substrate 1, covering the electrodes 2a and 2b. Here, this film 3 is formed by the methods described in the following ■ to ■, which are methods of forming a film made of a redox substance on a substrate.・Physical adsorption method (Figure 2 (a) or (b)) ■
A method that utilizes the oxide layer on the surface of the substrate. First, 10H groups are created on the electrode surface by alkali treatment, and this is reacted with organosilicon compounds such as chlorosilane or alkoxysilane to form -0-3i- bonds. Method for fixing functional groups (Fig. 2 (C)) ■ Appropriate chemical treatment is applied to the surface of the carbon substrate to form -COOH groups and -NH2 groups that can be chemically bonded.
−ｃｏｃｚ基を導入し、これらの置換基を利用したアミ
ド結合を介して目的官能基を固定する方法（第２図（ｄ
））
■ 酸化還元樹脂を適当なを機溶剤に熔かし、基板表面
にコーティングし、乾固させて官能基をもった薄膜を作
成する方法
■ 蒸着法によりｔｆｆｉ体及び高分子などの薄膜を電
極表面に生成する方法
■ 及びスパッタリング法により単量体及び高分子など
の薄膜を電極表面に生成する方法■ 電気泳動を利用し
て電着する方法（＠着法）■ ステアリン酸などと混合
してＬＢ膜を作り重陽上に引上げる方法（ＬＢ腹膜法。A method of introducing a -cocz group and fixing a desired functional group via an amide bond using these substituents (see Figure 2 (d)
)) ■ A method of melting a redox resin in a suitable organic solvent, coating it on the substrate surface, and drying it to create a thin film with functional groups.■ Creating a thin film of tffi and polymers by vapor deposition method. A method of forming a thin film of monomers and polymers on the electrode surface using a sputtering method. A method of electrodeposition using electrophoresis (@deposition method). A method of creating an LB membrane and raising it above the hyaluronic acid (LB peritoneal method).
のうち■〜■、■〜■のいずれかの方法を用いることが
できる。次に第１図（Ｃ１に示すように、上記ニュート
ラルレッド膜３のうち上記電極２ａを覆っている部分を
イオンスパッタリングなどによって除去することにより
、上記電極２ｂ上のみにニュートラルレッド膜３を形成
する。これは、始めからマスキングによって上記電極２
ｂ上のみにニュートラルレッド膜を成膜して形成しても
よい。Among them, any one of methods ① to ② and ② to ② can be used. Next, as shown in FIG. 1 (C1), by removing the portion of the neutral red film 3 that covers the electrode 2a by ion sputtering or the like, a neutral red film 3 is formed only on the electrode 2b. This is done by masking the electrode 2 from the beginning.
A neutral red film may be formed only on b.
そして最後に、第１図（ｄｉに示すように、トルイジン
ブルー膜４を電極２ａを覆ってニュートラルレッド膜３
に接着接合するよう上記■〜■のいずれかの方法によっ
て形成し、本実施′例の整流素子を得ることができる。Finally, as shown in FIG.
The rectifying element of this embodiment can be obtained by forming the rectifier element by any one of the methods (1) to (4) above so as to adhesively bond the rectifying element to the rectifying element.
このような構成になる素子では、電極２ａと電極２ｂ間
に電圧■を印加したとき、第４図（ａｌ、 ｆｂｌを用
いて述べた作用と同様に、電子はレドックス電位の差異
によりニュートラルレッド３からトルイジンブルー４へ
流れる。第３図はこのときの電圧−電流（Ｖ−Ｉ）特性
を示し、本素子は整流特性を呈することがわかる。In an element having such a configuration, when a voltage (■) is applied between the electrode 2a and the electrode 2b, the electrons change to neutral red 3 due to the difference in redox potential, similar to the effect described using FIG. 4 (al, fbl). to Toluidine Blue 4. Fig. 3 shows the voltage-current (V-I) characteristics at this time, and it can be seen that this element exhibits rectifying characteristics.
従って、上記構成により分子レベルの超微細な大きさの
整流素子を実現でき、該素子を用いて高密度、高速度化
が可能な集積回路を得ることができる。Therefore, with the above configuration, it is possible to realize a rectifying element with an ultra-fine size on a molecular level, and by using this element, it is possible to obtain an integrated circuit that can achieve high density and high speed.
なお、上記実施例では酸化還元物質として、酸化還元色
素であるニュートラルレッド、トルイジンブルーを用い
たが、これはもちろん他の酸化還元色素１例えばメチレ
ンブルー、メチルカプリブルー、ガロシアニン、インド
フェノール、インジゴ、フェノサフラニンなどであって
もよく、またフタロシアニン、ポルフィリン、アヌレン
などの誘導体である有機金属錯体、あるいはポリ−２−
ビニルフェノチアジンなどの酸化還元樹脂であってもよ
い。In the above examples, neutral red and toluidine blue, which are redox dyes, were used as redox substances, but of course other redox dyes such as methylene blue, methyl capri blue, gallocyanine, indophenol, indigo, and phenol can also be used. It may also be safranin, an organometallic complex such as a derivative of phthalocyanine, porphyrin, annulene, or poly-2-
It may also be a redox resin such as vinylphenothiazine.
また、上記実施例では酸化還元物質膜を２層累積した場
合について説明したが、これは３層以上異積させてもよ
く、上記実施例と同様の効果が得られる。Further, in the above embodiment, the case where two layers of redox substance films are stacked has been described, but three or more layers may be stacked differently, and the same effect as in the above embodiment can be obtained.
以上のように、この発明によれば、相互にレドックス電
位の異なる酸化還元物質で第１．第２の電子伝達物質膜
を形成し、各酸化還元’Ｔｈｆｆのレドックス電位の差
異を利用して整流素子を構成したので、整流素子サイズ
を分子レベルの超微細な大きさに近づけることができ、
該素子を用いて集積回路の高密度化、高速度化が可能な
集積回路を得ることができる。As described above, according to the present invention, redox substances having mutually different redox potentials are used as the first oxidation-reduction substances. By forming a second electron carrier film and constructing a rectifying element by utilizing the difference in redox potential of each oxidation-reduction 'Thff, the size of the rectifying element can be brought close to ultra-fine size at the molecular level.
Using this element, it is possible to obtain an integrated circuit that can achieve higher density and higher speed integrated circuits.
第１図はこの発明の一実施例による整流素子を製造する
方法を示す工程別断面図、第２図は酸化還元物質を基板
上に成膜する方法の具体例を示す図、第３図は上記整流
素子の電圧−電流特性を示す図、第４図（ａ）はＡ−Ｂ
型酸化還元物質複合体を示す模式図、第４図（ｂ）はそ
のレドックス電位状態を示す図、第５図は従来のＭ Ｏ
Ｓ構成の整流素子の一例を示す断面構成図である
図において、■は基板、２ａ、 ２ｂは電極、３はニ
ュートラルレッド膜、４はトルイジンブルー膜である。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a cross-sectional view of each step showing a method for manufacturing a rectifying element according to an embodiment of the present invention, FIG. 2 is a view showing a specific example of a method of forming a film of a redox substance on a substrate, and FIG. A diagram showing the voltage-current characteristics of the above rectifying element, FIG. 4(a) is A-B
Fig. 4(b) is a diagram showing its redox potential state, and Fig. 5 is a schematic diagram showing a type of redox substance complex.
In the figure, which is a cross-sectional configuration diagram showing an example of a rectifying element having an S configuration, ■ is a substrate, 2a and 2b are electrodes, 3 is a neutral red film, and 4 is a toluidine blue film. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (6)
質膜と、 上記第１酸化還元物質のレドックス電位と異なるレドッ
クス電位を有する第２の酸化還元物質で作成され、上記
第１酸化還元物質膜に接着接合された第２酸化還元物質
膜と、 上記第１、第２酸化還元物質膜にそれぞれ電気的に接続
された第１、第２の電極とを備え、上記各酸化還元物質
のレドックス電位の差異を利用して整流特性を発生させ
るようにした整流素子。(1) a first redox substance film made of a first redox substance; a second redox substance having a redox potential different from the redox potential of the first redox substance; a second redox material film adhesively bonded to the reducing material film; and first and second electrodes electrically connected to the first and second redox material films, respectively; A rectifying element that generates rectifying characteristics by utilizing the difference in redox potential between.
徴とする特許請求の範囲第１項記載の整流素子。(2) The rectifier element according to claim 1, wherein the first and second electrodes are metal electrodes.
、有機金属錯体、酸化還元色素、又はこれらの物質と他
の有機物との結合体であることを特徴とする特許請求の
範囲第１項又は第２項記載の整流素子。(3) The above-mentioned redox substance is viologens, flavins, organometallic complexes, redox pigments, or combinations of these substances and other organic substances, or 2. The rectifying element according to item 2.
ブリブルー、ガロシアニン、インドフェノール、インジ
ゴ、フェノサフラニン、ニュートラルレッド、又はトル
イジンブルーであることを特徴とする特許請求の範囲第
３項記載の整流素子。(4) The rectifying element according to claim 3, wherein the redox dye is methylene blue, methylcabri blue, galocyanine, indophenol, indigo, phenosafranin, neutral red, or toluidine blue.
リン、又はアヌレンの誘導体であることを特徴とする特
許請求の範囲第３項記載の整流素子。(5) The rectifying element according to claim 3, wherein the organometallic complex is a derivative of phthalocyanine, porphyrin, or annulene.
ことを特徴とする特許請求の範囲第３項記載の整流素子
。(6) The rectifying element according to claim 3, wherein the other organic substance is polyvinyl alcohol.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61164199A JPS6319866A (en) | 1986-07-11 | 1986-07-11 | Rectifying element |
| US07/068,297 US4764415A (en) | 1986-07-01 | 1987-07-01 | Electric element using oxidation-reduction substances |
| DE19873721793 DE3721793A1 (en) | 1986-07-01 | 1987-07-01 | ELECTRICAL ELEMENT USING OXIDATION REDUCTION SUBSTANCES |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61164199A JPS6319866A (en) | 1986-07-11 | 1986-07-11 | Rectifying element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6319866A true JPS6319866A (en) | 1988-01-27 |
Family
ID=15788556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61164199A Pending JPS6319866A (en) | 1986-07-01 | 1986-07-11 | Rectifying element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6319866A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02257674A (en) * | 1989-03-29 | 1990-10-18 | Mitsubishi Electric Corp | Rectifying device |
| JPH02260575A (en) * | 1989-03-31 | 1990-10-23 | Mitsubishi Electric Corp | Rectifier |
| CN1084349C (en) * | 1998-06-19 | 2002-05-08 | 清华大学 | Process for preparing poly-beta-hydroxy-butyrate |
-
1986
- 1986-07-11 JP JP61164199A patent/JPS6319866A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02257674A (en) * | 1989-03-29 | 1990-10-18 | Mitsubishi Electric Corp | Rectifying device |
| JPH02260575A (en) * | 1989-03-31 | 1990-10-23 | Mitsubishi Electric Corp | Rectifier |
| CN1084349C (en) * | 1998-06-19 | 2002-05-08 | 清华大学 | Process for preparing poly-beta-hydroxy-butyrate |
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