JPS6319854A - Switching element - Google Patents

Abstract

PURPOSE:To bring the size of an element close to the superfine size of molecule level by a method wherein the first-the third oxidation-reduction substance films are formed of an oxidation-reduction substance, and a switching element which displays transistor characteristics or switching characteristics is constituted by utilizing the difference in redox potential. CONSTITUTION:A neutral lead film 3, which is an oxidation-reduction substance, is formed on a substrate 1 covering electrodes 2a-2c. Then, the first and the third neutral red films 3a and 3c are formed on the electrodes 2a and 2c by removing the part where the electrode 2b is covered by the film 3 by an ion sputtering method and the like. Lastly, the second toluidine blue film 4 is formed by adhering to the third neutral red films 3a and 3c, and a switching element is obtained. Then, a fixed negative voltage V2 is applied between the electrodes 2a and 2c, and when the fixed negative voltage Vl running between the electrodes 2a and 2c is turned ON or OFF, the current running between the electrodes 2a and 2c can be turned ON or OFF.

Description

[Detailed Description of the Invention] [Field of Industrial Application] This invention relates to a switching element in the field of integrated circuits, and by using a redox substance as a constituent material of the element, the size of the element can be reduced to an ultra-fine size at the molecular level. It is designed to be able to accommodate large numbers of people (from several tens to hundreds of people), and to achieve high density and high speed.

[Conventional technology]

Conventionally, a field effect transistor (FET) shown in FIG. 4 has been used as a switching element in an integrated circuit. In the figure, 11 is an n-type silicon substrate, 12 is a channel region, 13 is a P layer, 14 is a 5in2 film, and 15 is a
16 is a source electrode, 16 is a gate electrode, and 17 is a drain electrode. The transistor operation or switching operation of this conventional FET is performed by controlling the gate voltage applied through the gate electrode. That is, the number of current carriers in the surface layer between the source electrode 15 and the drain electrode 17 is changed by the gate voltage, thereby controlling the current.

[Problem that the invention seeks to solve]

Since conventional switch elements are configured as described above, microfabrication is possible, and currently LS using switch elements with the above structure or rectifying elements with a similar structure.
As I, a 256-bit LSI has been put into practical use.

Incidentally, in order to increase the memory capacity and operation speed of integrated circuits, it is essential to miniaturize the elements themselves, but Si
In devices using ultra-fine patterns of about 0.2 μm, the mean free path of electrons becomes almost equal to the device size, which has the limitation that independence of the devices cannot be maintained.

In this way, silicon technology, which continues to develop day by day, is expected to eventually hit a wall in terms of miniaturization. What we can do is needed.

The present invention has been made in view of the above circumstances, and particularly aims to create an electric circuit element whose size can be brought close to ultra-fine size at the molecular level by using a redox substance as a constituent material of the electric circuit element. The purpose is to obtain a switching element among them.

[Means for solving problems]

By the way, in living organisms, there are multiple types of proteins V (hereinafter referred to as electron transfer proteins) that have the ability to transfer electrons in a predetermined direction. They are embedded with a certain orientation and have a specific intermolecular arrangement so that electron transfer occurs between molecules.

This electron transfer fluorescent substance involves an oxidation-reduction (redox) reaction during electron transfer, and can flow electrons from the 9 levels of the redox potential of each electron transfer protein to the positive order. It is thought that this would allow the movement of electrons to be controlled at the molecular level.

Furthermore, recent findings indicate that it is possible to form an electron transfer complex capable of electron transfer by combining electron transfer substances other than electron transfer proteins that exist in living organisms. .

Therefore, if an electron carrier with an appropriate redox potential is
It is thought that if the types (A and B) are used and a three-layer adhesive bond is made with A-B-A, it is possible to form a bond that produces transistor characteristics or switching characteristics by utilizing the difference in redox potential. The present inventor created this invention by paying attention to this fact.

Therefore, the switch element according to the present invention includes a first redox material film made of a first redox material, and a second redox film having a redox potential different from the redox potential of the first redox material. A second redox substance film made of a reducing substance and adhesively bonded to the first redox substance film, and a third redox substance having a redox potential different from the redox potential of the first redox substance. is,
a third redox material film adhesively bonded to the first redox material film; and a third redox material film adhesively bonded to the first redox material film; Second. The first. Second. It is configured by providing a third electrode.

[Effect]

In this invention, transistor characteristics or switching characteristics are generated by at least two types of redox substances having different redox potentials. That is, FIG. 5 (al,
To explain using the schematic diagram of the A-B-A type redox substance complex in (b) and the relationship between its redox potentials, in this complex formed by joining redox substances A, B, and A, A, B
, the distribution of redox potential of the redox substance A can be changed by controlling the voltage applied to the redox substance B, and as a result, the p −
It is possible to obtain an element exhibiting transistor characteristics or switching characteristics similar to those of an n-p junction.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1(d) shows a switch element according to an embodiment of the present invention, in which ■ is a substrate having gun edge characteristics, 2a to
2C are electrodes provided on the substrate 1 at predetermined intervals, and the electrode 2b has an insulating layer (not shown) made of, for example, oxide or resin formed on its surface. 3a
3c is a first neutral red film which is a redox material film on electrode 2a, and 3c is a third neutral red film on electrode 2C. 4 is a second toluidine blue film which is an oxidation-reduction material film, which covers the electrically conductive JP 2b on the substrate 1 and forms the first toluidine blue film. It is formed so as to be adhesively bonded to the third neutral red films 3a and 3c. Also Ni 1-Tralresodo,
The redox potential of toluidine blue is -325 respectively.
mV, +115mV.

Next, the manufacturing method of this example will be explained based on FIGS. 1(a) to 1(d).

First, as shown in FIG.
Forms ~2C. Next, as shown in FIG. The following methods ① to ② are methods for forming the substrate, namely ① A method of irreversibly chemically and physically adsorbing a compound having a functional group onto the substrate surface (see Figure 2).
a) or (b)) ■ A method that utilizes the oxide layer on the substrate surface, that is, first, 10H groups are created on the substrate surface by alkali treatment, and this and chlorosilane, which is an organosilicon compound, are used.
A method of fixing functional groups through -0-3i- bonds by reaction with , or alkoxysilane (Fig. 2 (C)) ■ Appropriate chemical treatment is applied to the surface of a carbon substrate to form chemical bonds on the surface of the substrate. Possible 1000H groups.

-NH2 group, -COC/! A method of introducing a group and fixing the desired functional group via an amide bond using these substituents (Figure 2 (d)) ■ Dissolve the redox resin in a suitable organic solvent, coat it on the substrate surface, A method to create a thin film with functional groups by drying ■ A method to create a thin film of monomers, polymers, etc. on the substrate surface by vapor deposition method ■ A method to create a thin film of monomers, polymers, etc. on the substrate surface by sputtering method ■ A method of electrodeposition using electrophoresis (electrodeposition method) ■ A method of mixing with stearic acid etc. to form an LB film and pulling it onto a substrate (Among the LB peritoneal methods, ■ - ■, ■ Any of the methods of ~■ can be used.

Next, as shown in FIG. 1C, by removing the portion of the neutral red film 3 that covers the electrode 2b by ion sputtering or the like, a first layer is formed on the electrodes 2a and 2c. Third neutral red film 3a
, 3c. The films 3a and 3c may be formed by forming a neutral red film only on the electrodes 2a and 2c by masking from the beginning. And finally, the first
As shown in FIG.
The switch element of this example can be obtained.

Next, the functions and effects will be explained with reference to FIG.

FIG. 3 (al) is a schematic diagram showing the voltage application state of the switch element of this example, and FIG. 3 ('b) is a diagram showing the redox potential state of each redox substance at this time.

In the same figure (b), the redox potential in the C state shown by the solid line indicates the state where voltages ■ and ■2 are not applied, and -
The redox potential in the B state shown by the dotted line indicates the state when the voltage V is not applied and the voltage V2 is applied as a negative voltage to the electrode 2c (off state B), and the redox potential in the C state shown by the broken line shows the state when the voltage V2 is applied as a negative voltage to the electrode 2c. 2 shows a state (on state flu) when voltage 2 is applied in the same manner as in state b, and voltage 2 is applied as a negative voltage with respect to the voltage Jffi2c.

In the bH state, electrons do not flow between the electrode 2c and the electrode 2a,
In the C state, i electrons flow. That is, a constant negative voltage (2) is applied between the electrodes 2C and 2a, and the voltage between the electrodes 2C and 2b is
By turning on and off the constant negative voltage 1 between the electrodes 2c and 23, it is possible to turn on and off the current flowing between the electrodes 2c and 23, and switching characteristics can be realized. ■
. is the difference in redox potential between neutral red and toluidine blue.

According to this embodiment, a switching element that operates in the same way as a conventional semiconductor switching element (pnp junction type) can be converted into a molecular-level M? & It can be realized as a small-sized element, and by using this element, an integrated circuit that can achieve high density and high speed can be obtained.

In the above examples, neutral red and toluidine blue, which are redox dyes, were used as redox substances, but of course other redox dyes such as methylene blue, methylcabri blue, gallocyanine, indophenol, indigo, and phenol can also be used. It may also be safranin, an organometallic complex such as a derivative of phthalocyanine, porphyrin, annulene, or poly-2-
It may also be a redox resin such as vinylphenothiazine.

Further, in the above embodiment, a case was explained in which the switch element was configured using two types of redox substances, but this may be configured using three or more types of redox substances, and the same be effective.

〔Effect of the invention〕

As described above, according to the present invention, redox substances having mutually different redox potentials are used as the first oxidation-reduction substances. A second and third redox substance film is formed to separate each redox substance.

Since we constructed a switching element that exhibits transistor characteristics or switching characteristics by utilizing the difference in the redox potential of An integrated circuit capable of speeding up can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing a method for manufacturing a switch element according to an embodiment of the present invention, FIG. 2 is a diagram showing a specific example of a method for forming a film of a redox substance on a substrate, and FIG. al
3('b) is a diagram showing the redox potential state of each redox substance, and FIG. 4 is an example of a switch element with a conventional MO3 configuration. A cross-sectional configuration diagram shown in FIG. 5 (al is a schematic diagram showing an A-B-A type redox substance complex, and FIG. 5 (b) is a diagram showing its redox potential state. In the figure, 1 is a substrate, 2a is a second electric scraper, 2b is a first electrode, 2c is a third electrode, 3 is a neutral red film, 3a
3C is the first neutral-lend film, 3C is the third neutral-lend film, and 4 is the second toluidine blue film. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (6)

[Claims] (1) A first redox substance film made of a first redox substance; and a second redox substance film made of a second redox substance having a redox potential different from the redox potential of the first redox substance;
a second redox material film adhesively bonded to the redox material film; and a third redox material having a redox potential different from that of the first redox material; a third redox material film adhesively bonded; second and third electrodes electrically connected to the second and third redox material films, respectively; and electrical influence on the first redox material film. a first electrode for providing the above-mentioned oxidation-reduction substances, and is configured to generate transistor characteristics or switching characteristics by utilizing a difference in redox potential of each of the redox substances. (2) The first, second, and third electrodes are metal electrodes,
2. The switch element according to claim 1, wherein the first electrode has an insulating layer formed on its surface. (3) The above-mentioned redox substance is viologens, flavins, organometallic complexes, redox pigments, or combinations of these substances and other organic substances, or The switch element according to item 2. (4) The switch element according to claim 3, wherein the redox dye is methylene blue, methylcabriblue, galocyanine, indophenol, indigo, phenosafranin, neutral red, or toluidine blue. (5) The switch element according to claim 3, wherein the organometallic complex is a derivative of phthalocyanine, porphyrin, or annulene. (6) The switch element according to claim 3, wherein the other organic substance is polyvinyl alcohol.