JPS63197333U - - Google Patents
Info
- Publication number
- JPS63197333U JPS63197333U JP8917187U JP8917187U JPS63197333U JP S63197333 U JPS63197333 U JP S63197333U JP 8917187 U JP8917187 U JP 8917187U JP 8917187 U JP8917187 U JP 8917187U JP S63197333 U JPS63197333 U JP S63197333U
- Authority
- JP
- Japan
- Prior art keywords
- processed
- substrate
- incident window
- gas supply
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000006552 photochemical reaction Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案の一実施例の装置の断面図、第
２図は従来装置の断面図である。 １……シリコン基板、２……反応槽、６……レ
ーザ光、８，９，１０……ガスボンベ、１２……
光入射窓部、１５……ガス供給口、１６……ガス
排気口。
２図は従来装置の断面図である。 １……シリコン基板、２……反応槽、６……レ
ーザ光、８，９，１０……ガスボンベ、１２……
光入射窓部、１５……ガス供給口、１６……ガス
排気口。
Claims (1)
- 反応槽内に配置される被処理基板の周辺の光入
射窓側に近接して反応性ガス供給口、被処理基板
の反光入射窓側に排気口を備えたことを特徴とす
る光化学反応利用装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8917187U JPS63197333U (ja) | 1987-06-10 | 1987-06-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8917187U JPS63197333U (ja) | 1987-06-10 | 1987-06-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63197333U true JPS63197333U (ja) | 1988-12-19 |
Family
ID=30947914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8917187U Pending JPS63197333U (ja) | 1987-06-10 | 1987-06-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63197333U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07111246A (ja) * | 1993-10-12 | 1995-04-25 | Nec Corp | レーザｃｖｄ装置 |
-
1987
- 1987-06-10 JP JP8917187U patent/JPS63197333U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07111246A (ja) * | 1993-10-12 | 1995-04-25 | Nec Corp | レーザｃｖｄ装置 |