JPS63197324A - Gas source cell - Google Patents
Gas source cellInfo
- Publication number
- JPS63197324A JPS63197324A JP3012287A JP3012287A JPS63197324A JP S63197324 A JPS63197324 A JP S63197324A JP 3012287 A JP3012287 A JP 3012287A JP 3012287 A JP3012287 A JP 3012287A JP S63197324 A JPS63197324 A JP S63197324A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- heating part
- heat
- duct
- source cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 238000002844 melting Methods 0.000 claims abstract description 5
- 230000008018 melting Effects 0.000 claims abstract description 4
- 239000007769 metal material Substances 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 239000007789 gas Substances 0.000 abstract description 76
- 239000010409 thin film Substances 0.000 abstract description 12
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 7
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 5
- 239000010935 stainless steel Substances 0.000 abstract description 5
- 230000003197 catalytic effect Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052785 arsenic Inorganic materials 0.000 abstract description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 239000012212 insulator Substances 0.000 abstract 4
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 238000004227 thermal cracking Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241001504505 Troglodytes troglodytes Species 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、真空中で薄膜を堆積させる装置に月いられ
るガスソースセルに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention This invention relates to a gas source cell that can be used in an apparatus for depositing thin films in vacuum.
この発明は、原料気体を加熱する機構を有するガスソー
スセルにおいて、高融点金属よりなる気体加熱部を有し
、該気体加熱部に原料気体を導く気体の流路の少くとも
一部が非金属材料よりなる構造にすることにより、目的
とするｆｉ膜の特性を劣化させるようなガスの放出が少
く、消費電力の少いガスソースセルを得るものである。This invention provides a gas source cell having a mechanism for heating a raw material gas, which has a gas heating section made of a high melting point metal, and at least a part of a gas flow path that guides the raw material gas to the gas heating section is made of a non-metallic metal. By making the structure made of the material, it is possible to obtain a gas source cell that releases less gas that would deteriorate the characteristics of the target FI film and consumes less power.
従来、図２に示す様に、気体加熱部１を含む原料気体の
流路がすべて金属製であるか、または、図３に示す様に
気体加熱部にセラミックを用いたガスソースセルが知ら
れていた。Conventionally, gas source cells have been known in which the flow path for the raw material gas including the gas heating section 1 is entirely made of metal, as shown in FIG. 2, or in which the gas heating section is made of ceramic, as shown in FIG. was.
原料気体として、アルシン（ＡｓＨ３）やホスフィン（
Ｐｌｈ）を用いる場合、原料気体を効率的に熱分解する
ためには、通常６００℃以上の温度を必要とする。この
ため図２に示すような、気体加熱部を含むすべての気体
の流路が金属で構成されている従来のガスソースセルに
おいては、金属の良好な熱伝導性のため、高温に保たれ
た気体加熱部１より、導管部２．気体導入部３及び取付
はフランジ４に熱が逃げやすい。このため熱効率が悪く
なる欠点があった。また、上記気体加熱部１より逃げた
熱のため、ステンレス鋼よりなる導管部２．気体導入部
３．取付はフランジ４等の温度が上昇する。Arsine (AsH3) and phosphine (
When using Plh), a temperature of 600° C. or higher is usually required to efficiently thermally decompose the raw material gas. For this reason, in a conventional gas source cell as shown in Figure 2, in which all gas flow paths including the gas heating section are made of metal, the high temperature is maintained due to the good thermal conductivity of metal. From the gas heating section 1, the conduit section 2. Heat easily escapes to the flange 4 in the gas introduction part 3 and the mounting. For this reason, there was a drawback that thermal efficiency deteriorated. Also, due to the heat escaping from the gas heating section 1, the conduit section 2 made of stainless steel. Gas introduction part 3. During installation, the temperature of the flange 4, etc. increases.
温度が上昇した壁面からは、ＣＯ，Ｈ，０等のガス放出
が大きくなる。特にステンレス鋼は、高温になると、Ｃ
Ｏのガス放出が著しく大きくなる。放出されたＣＯ等の
ガスが、目的とする薄膜の特性に悪影響を及ぼすため、
良好な特性をもつ薄膜が得られない欠点もあった。また
、図３に示すように、気体加熱部１にアルミナ、石英ガ
ラス等のセラミックスを用いた従来のガスソースセルで
は、以下に示すような欠点があった。即ち、セラミック
ス特にアルミナのような焼結材料は、高温では材料の表
面及び内部からのガス放出が大きく、そのため、良好な
薄質を持つ薄膜を得られない欠点があった。Gases such as CO, H, and 0 are released from the wall surface where the temperature has increased. In particular, when stainless steel reaches high temperatures, C
Outgassing of O becomes significantly large. Because the released gases such as CO have a negative effect on the properties of the target thin film,
Another drawback was that a thin film with good properties could not be obtained. Furthermore, as shown in FIG. 3, the conventional gas source cell in which the gas heating section 1 is made of ceramics such as alumina or quartz glass has the following drawbacks. That is, ceramics, particularly sintered materials such as alumina, have the disadvantage that gas is released from the surface and inside of the material to a large extent at high temperatures, making it difficult to obtain thin films with good quality.
また、気体加熱部を構成するセラミックス自体自体の分
解、蒸発のために、良好な特性をもつ薄膜を得られない
欠点もあった０例えば、目的とする薄膜がｌｌｌ−Ｖ族
化合物半導体であり、気体加熱部に石英ガラスを用いた
場合、石英ガラスを起源とするシリコンが目的とする化
合物半導体にドーピングされてしまい、良好な特性を持
つ薄膜が得られないことが、従来より指摘されている。In addition, there is also the disadvantage that thin films with good properties cannot be obtained due to decomposition and evaporation of the ceramics that constitute the gas heating section.For example, if the desired thin film is a III-V group compound semiconductor, It has been pointed out that when quartz glass is used in the gas heating section, silicon originating from the quartz glass is doped into the target compound semiconductor, making it impossible to obtain a thin film with good properties.
また、気体加熱部１にタンタルを用いた場合、アルシン
やホスフィンの熱分解を促進する触媒作用がタンタルに
あることが従来より指摘されている。ところが、気体加
熱部をセラミックスで構成した場合、セラミックスには
触媒作用がないため、熱分解を効率的に行うためには気
体加熱部１をより高温にしなければならない。このため
前記の気体加熱部を構成するセラミックスの表面及び内
部からの放出ガス及び／または、セラミックス自体の分
解、蒸発がより加速され、良好な特性を持つ薄膜が得ら
れない欠点があった。Furthermore, it has been pointed out that when tantalum is used in the gas heating section 1, tantalum has a catalytic action that promotes thermal decomposition of arsine and phosphine. However, when the gas heating section is made of ceramics, the gas heating section 1 must be heated to a higher temperature in order to efficiently perform thermal decomposition, since ceramics do not have a catalytic effect. For this reason, the gas released from the surface and inside of the ceramic constituting the gas heating section and/or the decomposition and evaporation of the ceramic itself are accelerated, resulting in the disadvantage that a thin film with good properties cannot be obtained.
以上の欠点を解決するために本発明においては、原料気
体を加熱する機構を有するガスソースセルにおいて、高
融点金属よりなる気体加熱部を有し、該気体加熱部に原
料気体を導く気体の流路の少くとも一部が非金属材料よ
りなる構成とした。In order to solve the above-mentioned drawbacks, the present invention provides a gas source cell having a mechanism for heating source gas, which includes a gas heating section made of a high melting point metal, and a gas flow that guides the source gas to the gas heating section. At least a portion of the path is made of non-metallic material.
上記の構成とすることにより、本発明を用いれば、気体
加熱部からのガス放出を少くし、かつ気体加熱部からの
熱の逃げを小さくすることができる。With the above configuration, if the present invention is used, gas emission from the gas heating section can be reduced, and heat escape from the gas heating section can be reduced.
第１図に本発明の実施例であるガスソースセルを示す。 FIG. 1 shows a gas source cell that is an embodiment of the present invention.
本実施例のガスソースセルでは、ステンレス鋼よりなる
気体導入部３と、タンタルよりなる気体加熱部１と、気
体加熱部１の少なくとも、一部の周囲に設けられ気体加
熱部１を加熱するヒーター５と、ヒーター５の周囲に設
けられ、気体加熱部１の熱が外部に散逸することを防ぐ
熱シールド６と、前記気体加熱部ｌの一端に分子線噴出
ロアと、気体加熱部１の分子線噴出ロアとは反対の端に
接続した熱絶縁部９と、熱絶縁部９と気体導入部３とを
結ぶ導管２と、気体加熱部１の内部に設けられた内部熱
シールド８とを有する構造を持つ。ここで、ヒーター５
．熱シールド６、内部熱シールド８は、タンタルよりな
る。また、導管２はステンレス鋼、熱絶縁部９は石英ガ
ラスよりなる。ヒーター５に通電加熱することにより、
気体加熱部２が熱せられる。ヒーター５に供給される電
力は熱電対１０の出力をもとに制御される。The gas source cell of this embodiment includes a gas introduction part 3 made of stainless steel, a gas heating part 1 made of tantalum, and a heater provided around at least a part of the gas heating part 1 to heat the gas heating part 1. 5, a heat shield 6 provided around the heater 5 to prevent the heat of the gas heating section 1 from dissipating to the outside, a molecular beam ejection lower at one end of the gas heating section 1, and a molecular beam jetting lower at one end of the gas heating section 1; It has a thermal insulation part 9 connected to the end opposite to the line ejection lower, a conduit 2 connecting the thermal insulation part 9 and the gas introduction part 3, and an internal heat shield 8 provided inside the gas heating part 1. Has structure. Here, heater 5
．． The heat shield 6 and the internal heat shield 8 are made of tantalum. Further, the conduit 2 is made of stainless steel, and the thermal insulation part 9 is made of quartz glass. By heating the heater 5 with electricity,
The gas heating section 2 is heated. The electric power supplied to the heater 5 is controlled based on the output of the thermocouple 10.
気体導入部３より導入された原料気体は、導管２及び熱
絶縁部９により気体加熱部１に導かれ、気体加熱部１で
加熱される。原料気体がアルシン（ＡｓＨｉ）である場
合、アルシンは気体加熱部１で熱分解され、水素（Ｈｚ
）、ヒ素（Ａｓ、＾Ｓｌ、 Ａｓａ ”−”）となって
、分子線噴出ロアより噴出する。前記熱分解は、気体加
熱部を構成するタンクルの触媒作用により促進される。The raw material gas introduced from the gas introduction section 3 is guided to the gas heating section 1 through the conduit 2 and the thermal insulation section 9, and is heated in the gas heating section 1. When the raw material gas is arsine (AsHi), arsine is thermally decomposed in the gas heating section 1 and hydrogen (Hz
), arsenic (As, ^Sl, Asa ``-'') is ejected from the molecular beam ejection lower. The thermal decomposition is promoted by the catalytic action of the tanker that constitutes the gas heating section.
この時、内部熱シールド８により、気体加熱部１から熱
絶縁部９及び導管２への熱放射が防がれる。さらに、熱
絶縁部９により、気体加熱部１から導管２への熱伝導が
低減される。At this time, the internal heat shield 8 prevents heat radiation from the gas heating section 1 to the thermal insulation section 9 and the conduit 2. Furthermore, the thermal insulation section 9 reduces heat conduction from the gas heating section 1 to the conduit 2.
このため、気体加熱部１より導管２への熱の伝達は、著
しく低減される。したがって、導管２．取付フランジ４
の温度上昇を最小限におさえられ、かつ、熱効率を高め
られる。Therefore, the transfer of heat from the gas heating section 1 to the conduit 2 is significantly reduced. Therefore, conduit 2. Mounting flange 4
temperature rise can be minimized and thermal efficiency can be increased.
以上説明したように、本発明を用いれば、目的とする薄
膜の特性を劣化させるガスの放出を少く、従って良好な
特性の薄膜を堆積させ得る、かつ消費電力の少いガスソ
ースセルを得ることができる。As explained above, by using the present invention, it is possible to obtain a gas source cell that releases less gas that degrades the properties of the target thin film, can deposit a thin film with good properties, and consumes less power. Can be done.
第１図は、本発明の実施例であるガスソースセル、第２
図及び第３図は、従来のガスソースセルの構造を表す断
面図である。
ｌ・・・気体加熱部 ２・・・導管
３・・・気体導入部 ４・・・取付はフランジ５・・
・ヒーター ６・・・熱シールド７・・・分子線噴
出口 ８・・・内部熱シールド９・・・熱絶縁部
１０・・・熱電対以上
出願人 セイコー電子工業株式会社
絹ＢＦ４の〃スンースゼル（ｌｌ Ｗｒｅｎ父
革を米η゛スゾースセルめば〒屓ｎ図
第１図 第２図
一十
ｆ米のｊ゛スンースセル晧〇
第３図
旧刃FIG. 1 shows a gas source cell, a second embodiment, which is an embodiment of the present invention.
3 and 3 are cross-sectional views showing the structure of a conventional gas source cell. l...Gas heating part 2...Conduit 3...Gas introduction part 4...Flange 5...
・Heater 6...Heat shield 7...Molecular beam outlet 8...Internal heat shield 9...Heat insulation part
10... Thermocouples and above Applicant: Seiko Electronic Industries Co., Ltd. Silk BF4 Sun Suzell (father of ll Wren)
If you sell leather to rice η ゛ suzose cell 〒屓n fig. 1 fig. 2
Claims (3)
において、高融点金属よりなる気体加熱部を有し、該気
体加熱部に原料気体を導く気体の流路の少なくとも一部
が非金属材料よりなるガスソースセル。(1) A gas source cell having a mechanism for heating raw material gas, which has a gas heating section made of a high-melting point metal, and at least a part of the gas flow path that guides the raw material gas to the gas heating section is made of a non-metallic material. gas source cell.
範囲第１項記載のガスソースセル。(2) The gas source cell according to claim 1, wherein the non-metallic material is quartz glass.
第１項及び第２項記載のガスソースセル。(3) The gas source cell according to claims 1 and 2, wherein the high melting point metal is tantalum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3012287A JPS63197324A (en) | 1987-02-12 | 1987-02-12 | Gas source cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3012287A JPS63197324A (en) | 1987-02-12 | 1987-02-12 | Gas source cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63197324A true JPS63197324A (en) | 1988-08-16 |
Family
ID=12294975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3012287A Pending JPS63197324A (en) | 1987-02-12 | 1987-02-12 | Gas source cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63197324A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03214724A (en) * | 1990-01-19 | 1991-09-19 | Fuji Electric Corp Res & Dev Ltd | Thin-film manufacturing method |
-
1987
- 1987-02-12 JP JP3012287A patent/JPS63197324A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03214724A (en) * | 1990-01-19 | 1991-09-19 | Fuji Electric Corp Res & Dev Ltd | Thin-film manufacturing method |
| JP2555209B2 (en) * | 1990-01-19 | 1996-11-20 | 株式会社富士電機総合研究所 | Thin film manufacturing method |
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