JPS63193866U

JPS63193866U -

Info

Publication number: JPS63193866U
Application number: JP8468087U
Authority: JP
Priority date: 1987-05-29
Filing date: 1987-05-29
Publication date: 1988-12-14

Description

[Brief explanation of drawings]

第１図は本考案の磁気センサの実施例を示す平
面図、第２図は同上の等価回路図、第３図乃至第
６図はそれぞれ同上の製造工程を示す平面図、第
７図は第６図の―線拡大断面図、第８図はこ
の磁気センサの電極層の端部にリード線を接続し
た状態を示す部分拡大断面図、第９図ａは製品と
しての磁気センサを示す平面図、第９図ｂは同上
の側面図、第１０図は第１図に示す磁気センサに
おける磁界の方向と出力電圧の波形との関係を示
す説明図、第１１図ａ，ｂはそれぞれ回転円板に
よる磁界とバイアス磁界との関係を示すベクトル
図、第１２図は第１図に示す磁気センサのバイア
ス磁界なしでの出力電圧を示す波形図、第１３図
は第９図ａ，ｂに示す製品としての磁気センサの
変形例を示す側面図、第１４図は従来の磁気セン
サを示す平面図、第１５図は従来の磁気センサに
回転円板から磁界を印加する状態を示す平面図、
第１６図は従来の磁気センサの出力電圧の波形図
である。１……磁気センサ、２……絶縁基板、３Ａ，３
Ｂ……センサ部、４……電極層群、７Ａ，７Ｂ…
…第１、第２の主センサ、８Ａ，８Ｂ……第１、
第２の補助センサ、２５……バイアス磁界印加手
段、３０……被検出体としての回転円板。 FIG. 1 is a plan view showing an embodiment of the magnetic sensor of the present invention, FIG. 2 is an equivalent circuit diagram of the same, FIGS. 3 to 6 are plan views showing the manufacturing process of the same, respectively, and FIG. 6 is an enlarged sectional view taken along the line ``-'', FIG. 8 is a partial enlarged sectional view showing a state in which lead wires are connected to the ends of the electrode layers of this magnetic sensor, and FIG. 9a is a plan view showing the magnetic sensor as a product. , FIG. 9b is a side view of the same as above, FIG. 10 is an explanatory diagram showing the relationship between the direction of the magnetic field and the waveform of the output voltage in the magnetic sensor shown in FIG. 1, and FIGS. 11a and b are the rotating disks, respectively. Figure 12 is a waveform diagram showing the output voltage of the magnetic sensor shown in Figure 1 without a bias magnetic field, Figure 13 is the product shown in Figures 9a and b. FIG. 14 is a plan view showing a conventional magnetic sensor; FIG. 15 is a plan view showing a state in which a magnetic field is applied from a rotating disk to the conventional magnetic sensor;
FIG. 16 is a waveform diagram of the output voltage of a conventional magnetic sensor. 1...Magnetic sensor, 2...Insulating substrate, 3A, 3
B...Sensor section, 4...Electrode layer group, 7A, 7B...
...first and second main sensors, 8A, 8B...first,
Second auxiliary sensor, 25...bias magnetic field applying means, 30...rotating disk as a detected object.

Claims

[Claims for Utility Model Registration] (1) A magnetoresistive element is formed on a substrate, and a change in magnetoresistance caused by a change in the magnetic field from the object to be detected is used to generate a magnetoresistive element on the substrate. In a magnetic sensor that performs detection, there is a sensor section consisting of a main sensor and an auxiliary sensor, each formed by a magnetoresistive element and operating differentially by bridge connection, and a magnetic field from a detected object that acts on this sensor section. and a bias magnetic field applying means for applying a bias magnetic field in a predetermined direction to the object to be detected, and the direction of displacement of the object to be detected can be detected by using a change in direction of a composite magnetic field of the magnetic field from the object to be detected and the bias magnetic field. A magnetic sensor characterized by the following. (2) The direction of the bias magnetic field is selected from among directions of 0 degrees, 45 degrees, and 90 degrees with respect to the direction of the magnetic field from the detected object. magnetic sensor.