JPS63193866U - - Google Patents
Info
- Publication number
- JPS63193866U JPS63193866U JP8468087U JP8468087U JPS63193866U JP S63193866 U JPS63193866 U JP S63193866U JP 8468087 U JP8468087 U JP 8468087U JP 8468087 U JP8468087 U JP 8468087U JP S63193866 U JPS63193866 U JP S63193866U
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- detected
- sensor
- degrees
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
Description
第1図は本考案の磁気センサの実施例を示す平
面図、第2図は同上の等価回路図、第3図乃至第
6図はそれぞれ同上の製造工程を示す平面図、第
7図は第6図の―線拡大断面図、第8図はこ
の磁気センサの電極層の端部にリード線を接続し
た状態を示す部分拡大断面図、第9図aは製品と
しての磁気センサを示す平面図、第9図bは同上
の側面図、第10図は第1図に示す磁気センサに
おける磁界の方向と出力電圧の波形との関係を示
す説明図、第11図a,bはそれぞれ回転円板に
よる磁界とバイアス磁界との関係を示すベクトル
図、第12図は第1図に示す磁気センサのバイア
ス磁界なしでの出力電圧を示す波形図、第13図
は第9図a,bに示す製品としての磁気センサの
変形例を示す側面図、第14図は従来の磁気セン
サを示す平面図、第15図は従来の磁気センサに
回転円板から磁界を印加する状態を示す平面図、
第16図は従来の磁気センサの出力電圧の波形図
である。
1……磁気センサ、2……絶縁基板、3A,3
B……センサ部、4……電極層群、7A,7B…
…第1、第2の主センサ、8A,8B……第1、
第2の補助センサ、25……バイアス磁界印加手
段、30……被検出体としての回転円板。
FIG. 1 is a plan view showing an embodiment of the magnetic sensor of the present invention, FIG. 2 is an equivalent circuit diagram of the same, FIGS. 3 to 6 are plan views showing the manufacturing process of the same, respectively, and FIG. 6 is an enlarged sectional view taken along the line ``-'', FIG. 8 is a partial enlarged sectional view showing a state in which lead wires are connected to the ends of the electrode layers of this magnetic sensor, and FIG. 9a is a plan view showing the magnetic sensor as a product. , FIG. 9b is a side view of the same as above, FIG. 10 is an explanatory diagram showing the relationship between the direction of the magnetic field and the waveform of the output voltage in the magnetic sensor shown in FIG. 1, and FIGS. 11a and b are the rotating disks, respectively. Figure 12 is a waveform diagram showing the output voltage of the magnetic sensor shown in Figure 1 without a bias magnetic field, Figure 13 is the product shown in Figures 9a and b. FIG. 14 is a plan view showing a conventional magnetic sensor; FIG. 15 is a plan view showing a state in which a magnetic field is applied from a rotating disk to the conventional magnetic sensor;
FIG. 16 is a waveform diagram of the output voltage of a conventional magnetic sensor. 1...Magnetic sensor, 2...Insulating substrate, 3A, 3
B...Sensor section, 4...Electrode layer group, 7A, 7B...
...first and second main sensors, 8A, 8B...first,
Second auxiliary sensor, 25...bias magnetic field applying means, 30...rotating disk as a detected object.
Claims (1)
磁気抵抗効果素子に生じる被検出体からの磁界変
化に基づく磁気抵抗の変化を利用して被検出体の
検出を行う磁気センサにおいて、それぞれ磁気抵
抗効果素子により形成され、かつ、ブリツジ接続
により差動的に動作する主センサ及び補助センサ
からなるセンサ部と、このセンサ部に作用する被
検出体からの磁界に対し所定の方向のバイアス磁
界を印加するバイアス磁界印加手段とを有し、前
記被検出体からの磁界とバイアス磁界との合成磁
界の方向変化を利用して被検出体の変位方向を検
出可能としたことを特徴とする磁気センサ。 (2) 前記バイアス磁界の方向は、被検出体から
の磁界の方向に対し0度、45度、90度の各方
向のうちから選ばれるものである実用新案登録請
求の範囲第1項記載の磁気センサ。[Claims for Utility Model Registration] (1) A magnetoresistive element is formed on a substrate, and a change in magnetoresistance caused by a change in the magnetic field from the object to be detected is used to generate a magnetoresistive element on the substrate. In a magnetic sensor that performs detection, there is a sensor section consisting of a main sensor and an auxiliary sensor, each formed by a magnetoresistive element and operating differentially by bridge connection, and a magnetic field from a detected object that acts on this sensor section. and a bias magnetic field applying means for applying a bias magnetic field in a predetermined direction to the object to be detected, and the direction of displacement of the object to be detected can be detected by using a change in direction of a composite magnetic field of the magnetic field from the object to be detected and the bias magnetic field. A magnetic sensor characterized by the following. (2) The direction of the bias magnetic field is selected from among directions of 0 degrees, 45 degrees, and 90 degrees with respect to the direction of the magnetic field from the detected object. magnetic sensor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8468087U JPS63193866U (en) | 1987-05-29 | 1987-05-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8468087U JPS63193866U (en) | 1987-05-29 | 1987-05-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63193866U true JPS63193866U (en) | 1988-12-14 |
Family
ID=30939402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8468087U Pending JPS63193866U (en) | 1987-05-29 | 1987-05-29 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63193866U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004051298A1 (en) * | 2002-11-29 | 2004-06-17 | Yamaha Corporation | Magnetic sensor and temperature dependency characteristic compensation method for the same |
JP2007078700A (en) * | 1998-08-07 | 2007-03-29 | Asahi Kasei Corp | Semiconductor magnetoresistive device |
-
1987
- 1987-05-29 JP JP8468087U patent/JPS63193866U/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007078700A (en) * | 1998-08-07 | 2007-03-29 | Asahi Kasei Corp | Semiconductor magnetoresistive device |
WO2004051298A1 (en) * | 2002-11-29 | 2004-06-17 | Yamaha Corporation | Magnetic sensor and temperature dependency characteristic compensation method for the same |
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