JPS63192052A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS63192052A JPS63192052A JP2346087A JP2346087A JPS63192052A JP S63192052 A JPS63192052 A JP S63192052A JP 2346087 A JP2346087 A JP 2346087A JP 2346087 A JP2346087 A JP 2346087A JP S63192052 A JPS63192052 A JP S63192052A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cgl
- ctl
- photoreceptor
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 13
- WBFMCDAQUDITAS-UHFFFAOYSA-N arsenic triselenide Chemical compound [Se]=[As][Se][As]=[Se] WBFMCDAQUDITAS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 108091008695 photoreceptors Proteins 0.000 claims description 43
- 239000000969 carrier Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract description 13
- 230000036211 photosensitivity Effects 0.000 abstract description 13
- 239000010408 film Substances 0.000 abstract description 12
- 239000010409 thin film Substances 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 39
- 239000002356 single layer Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 206010034960 Photophobia Diseases 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 208000013469 light sensitivity Diseases 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 229910017000 As2Se3 Inorganic materials 0.000 description 1
- 101150020392 Cgl3 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 201000001113 congenital generalized lipodystrophy type 3 Diseases 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電子写真法による印刷機などに用いられる感光
体に係り、とくに多層構造を有する機能分離型の電子写
真用感光体に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a photoreceptor used in electrophotographic printing machines, etc., and particularly relates to a functionally separated electrophotographic photoreceptor having a multilayer structure. .
従来、電子写真法を用いた印刷機、例えば複写機やファ
クシミリなどに用いられる感光体の基本構造は、アルミ
ニウム（＾ｌ）、鉄（Ｆｅ） 、銅（Ｃｕ） 、ステン
レス等の導体或いは導電性処理の施されたガラスや高分
子フィルムなど導電性を有する材料を円筒形状、板状、
薄膜状にして基板とし、その基板上にＳｅ＋ Ｔｅ、
５ｅ−Ｔｅ＋ Ｓｅ、−Ａｓ＋ ＺｎＯ＋ ＣｄＳ＋
アモルファスＳｔなどの無機質の光導電性を有する物質
或いは銅フタロシアニン、アゾ系色素など有機質の光導
電性を有する物質を薄膜状に感光層として形成した単層
構造の感光体が知られている。Conventionally, the basic structure of photoreceptors used in printing machines using electrophotography, such as copying machines and facsimile machines, is made of conductors such as aluminum (^l), iron (Fe), copper (Cu), stainless steel, etc., or conductive materials. Conductive materials such as treated glass and polymer films are made into cylinders, plates, etc.
A thin film is formed into a substrate, and Se+Te,
5e-Te+ Se, -As+ ZnO+ CdS+
2. Description of the Related Art A photoreceptor having a single layer structure is known, in which a thin film of an inorganic photoconductive substance such as amorphous St, or an organic photoconductive substance such as copper phthalocyanine or an azo dye is formed as a photosensitive layer.
一方、最近になって感光体の光感度特性や生産性を向上
させる方法として、基板上に形成する感光層を二層の積
層構造とし、それぞれに別の機能を持たせるようにする
方法が採られるようになってきた。即ち、導電性基板に
接した第一の層は、前述した光導電性物質を主とした感
光層で、主に原画像からの光を吸収して光導電効果によ
ってキャリヤ（自由電荷）を発生する機能を持たせ、そ
の上に形成する第二の層は主に第一の層で発生したキャ
リヤを感光体表面にまで輸送する機能を持たせるもので
ある。従って、この表面側のキャリヤ輸送層（以下、Ｃ
ＴＬと略す）は、基板側のキャリヤ発生層（以下、ＣＧ
Ｌと略す）のキャリヤ発生効率を低下せしめないよう、
露光の際の光感度波長領域において可能な限り透明であ
ることが必要であり且つ高い電荷保持能力が要求される
。On the other hand, recently, as a method to improve the photosensitivity characteristics and productivity of photoreceptors, a method has been adopted in which the photosensitive layer formed on the substrate has a two-layered structure, and each layer has a different function. It has become possible to do so. That is, the first layer in contact with the conductive substrate is a photosensitive layer mainly made of the photoconductive substance mentioned above, which mainly absorbs light from the original image and generates carriers (free charges) by the photoconductive effect. The second layer formed thereon mainly has the function of transporting carriers generated in the first layer to the surface of the photoreceptor. Therefore, this surface side carrier transport layer (hereinafter referred to as C
(abbreviated as TL) is a carrier generation layer (hereinafter referred to as CG) on the substrate side.
In order not to reduce the carrier generation efficiency of (abbreviated as L),
It is necessary to be as transparent as possible in the photosensitivity wavelength region during exposure, and high charge retention ability is required.
また、感光体の表面側に形成されることから、ＣＧＬの
保護と共にそれ自身の機械的強度が高いことも要求され
る。Furthermore, since it is formed on the surface side of the photoreceptor, it is required to protect the CGL and to have high mechanical strength itself.
このような機能分離型の二層構造を有する感光体は、基
本的に上記単層型の感光体に比し総合的な性能が優れて
はいるが、ＣＧＬに有機質の先導電性材料を用いた場合
には全般的に光感度が低いという欠点を依然として有し
ている。また、Ｓｅや５ｅ−Ｔｅなどを用いた場合には
、周囲の温度が６０℃以上となったり、製作時に手が触
れるなど不純物が吸着すると結晶化しやす（耐久性が低
下するといった欠点がある。さらに、５ｅＩＣｄＳなど
を感光層として用いた場合、光感度を有する波長範囲が
狭く、特に長波長域の光感度が低いので、例えば半導体
発光ダイオード（ＬＥＤ）、半導体レーザーダイオード
を光源とするプリンタ用の感光体としては性能が不充分
である。A photoconductor with such a functionally separated two-layer structure basically has superior overall performance compared to the single-layer photoconductor described above, but it requires the use of an organic leading conductive material in the CGL. However, they still have the drawback of generally low photosensitivity. Furthermore, when Se, 5e-Te, etc. are used, they tend to crystallize (durability decreases) when the ambient temperature is 60° C. or higher or when impurities are adsorbed by touching them during production. Furthermore, when 5eICdS or the like is used as a photosensitive layer, the wavelength range in which it has photosensitivity is narrow, and the photosensitivity in the long wavelength range is particularly low. Its performance as a photoreceptor is insufficient.
一方、ＣＧＬの光導電性材料は溶剤に溶けにくいので、
ビニール系樹脂に分散させて用いることが多い、従って
このような方法で積層構造を形成する場合、ＣＧＬ上に
形成するＣＴＬの溶剤と前記樹脂とが相互作用を起こさ
ないようにする必要があり、そのため樹脂や溶剤の種類
の選択が極めて制限されしかも所望の特性を有するＣＣ
；Ｌ、 ＣＴＬも得にくいという問題が存在していた
。On the other hand, the photoconductive material of CGL is difficult to dissolve in solvents, so
It is often used by dispersing it in a vinyl-based resin. Therefore, when forming a laminated structure using this method, it is necessary to prevent interaction between the solvent of the CTL formed on the CGL and the resin. Therefore, the selection of resin and solvent types is extremely limited, and CC with desired characteristics is
There was also the problem that it was difficult to obtain L and CTL.
〔発明の目的〕一
本発明は、以上の点に鑑み、光感度が高くしがも長波長
領域でも光感度が低下せず広い光感度波長領域を有し且
つ比較的安価に得ることができる機能分離型の電子写真
用感光体を提供することを目的としている。[Object of the Invention] In view of the above points, the present invention has a high photosensitivity, does not reduce photosensitivity even in a long wavelength range, has a wide photosensitivity wavelength range, and can be obtained at a relatively low cost. The purpose of the present invention is to provide a functionally separated electrophotographic photoreceptor.
〔問題点を解決するための手段及び作用〕上記目的は本
発明によれば、導電性基板上にキャリヤ発生層（ＣＧＬ
）及びキャリヤ輸送層（ＣＴＬ）を順次積層した機能分
離型電子写真用窓光体において、上記ＣＧＬとしてアモ
ルファス三七レン化ヒ素の薄膜を形成することにより達
成される。[Means and effects for solving the problem] According to the present invention, the above object is achieved by forming a carrier generation layer (CGL) on a conductive substrate.
) and a carrier transport layer (CTL) are sequentially laminated in a functionally separated type electrophotographic window illuminator, and this is achieved by forming a thin film of amorphous arsenic triseptaenide as the CGL.
上記ＣＧＬ層としてのアモルファス三七レン化ヒ素のｉ
ｊｉ膜は約１０ＪＪＩＩ以下、好ましくは約１μｍの膜
厚に形成され得る。i of amorphous arsenic 37enide as the CGL layer
The ji film may be formed to a thickness of about 10JJII or less, preferably about 1 μm.
この発明によれば、感光層がＣＧＬとＣＴＬの二層に形
成されるとともにＣＧＬ層としてアモルファス三セレン
化ヒ素の薄膜が用いられるから、分光感度及び白色光感
度ともに優れた特性を有しており、しかもこの薄膜はＣ
ＴＬ層により被覆されているので感光体表面に欠陥が生
じた場合でもＣＧＬ層が保護されることができる。According to this invention, since the photosensitive layer is formed into two layers of CGL and CTL and a thin film of amorphous arsenic triselenide is used as the CGL layer, it has excellent characteristics in both spectral sensitivity and white light sensitivity. , and this thin film is C
Since it is covered with the TL layer, the CGL layer can be protected even if a defect occurs on the surface of the photoreceptor.
以下、添付の図面を参照して本発明の一実施例をさらに
説明する。Hereinafter, one embodiment of the present invention will be further described with reference to the accompanying drawings.
第１図は本発明による電子写真用感光体の基本構造の断
面を示すもので、感光体１は、ＡＩなどの導電性基板２
上に、光源からの光によってキャリヤを発生する機能を
もったキャリヤ発生層（ＣＯＬ）３と、発生したキャリ
ヤを表面に輸送する機能をもったキャリヤ輸送層（ＣＴ
Ｌ）４との二層構造を有する感光層で構成されている。FIG. 1 shows a cross section of the basic structure of a photoreceptor for electrophotography according to the present invention.
On the top, there is a carrier generation layer (COL) 3 which has the function of generating carriers by the light from the light source, and a carrier transport layer (CT) which has the function of transporting the generated carriers to the surface.
It is composed of a photosensitive layer having a two-layer structure with L)4.
ここで、ＣＧＬ３はアモルファス三七レン化ヒ素（以下
、ａ−ＡｓｔＳｌと略す）にて膜厚約１〜ＩＪ＋ｍの薄
膜に形成され得るａ ａ−ＡｓｚＳｅ２自体は長波長域
での光感度が比較的高い特徴を有しているため、このａ
−ＡｓｘＳｅｓを感光層とした感光体は、単層型感光体
において一部試みられてはいる。しかし、ａ−八Ｂａ５
ｅｓの材料自体が高価であることに加え以下の理由によ
り現在普及するまでに至っていない。即ち、単層型とし
て良好な画質を得るためには、どの光導電材料であって
も欠陥のない均一な表面を有する感光層が形成されなけ
ればならないが、これをａ−ＡｓｔＳｅｚで達成しよう
とすると約４０〜６０Ｊ−の膜厚が必要となる。しかし
ながら、このような厚さの均一な膜を従来の蒸着法、ス
パッタリング法或いはプラズマＣＶＤ法で得るには技術
的に極めて困難であり、製造コストも極めて高価となる
ことなどの理由による。Here, CGL3 can be formed into a thin film of amorphous arsenic 37enide (hereinafter abbreviated as a-AstSl) with a thickness of about 1 to IJ+m. Because it has high characteristics, this a
Some attempts have been made to create a photoreceptor using -AsxSes as a photoreceptor layer in the form of a single layer type photoreceptor. However, a-8Ba5
In addition to the fact that the ES material itself is expensive, it has not become widespread at present due to the following reasons. That is, in order to obtain good image quality as a single-layer type, a photosensitive layer must be formed with a uniform surface without defects, no matter what photoconductive material is used. Then, a film thickness of about 40 to 60 J- is required. However, it is technically extremely difficult to obtain a film with such a uniform thickness by conventional vapor deposition, sputtering, or plasma CVD methods, and the manufacturing cost is also extremely high.
そこで本発明者らは、このａ−ＡｓｔＳｅａをＣＧＬ
３とする機能分離型の感光体とした場合、充分実用化に
耐えるか、さらにこのＣＧ、Ｌ層の膜厚をどの程度域じ
ても欠陥が画質に影響しないか、またどのようなＣＴＬ
材料を用いればａ−ＡｓｘＳｅ３のＣＧＬの光感度特性
などを低下せしめないで済むかについて種々の実験を行
った。その結果゛、積層型感光体においてはａ−八５２
ｓｅｚのＣＧＬ層の厚みを従来の単層型から予想される
よりも迩かに薄くても良いことが判明したのである。Therefore, the present inventors developed this a-AstSea into CGL.
If we use a functionally separated type photoreceptor as shown in 3, will it be sufficiently durable for practical use? Furthermore, to what extent will the thickness of the CG and L layers not affect the image quality, and what kind of CTL?
Various experiments were conducted to determine whether the use of materials would prevent deterioration of the photosensitivity characteristics of CGL of a-AsxSe3. As a result, in the laminated photoconductor, a-852
It has been found that the thickness of the CGL layer of sez can be made much thinner than expected from the conventional single-layer type.
本発明者らは実験に先立ち、下記の条件により本発明に
よる機能分離型の感光体を製作した。まず導電性基板と
して、研磨された円筒形アルミニウム基板１を製作し、
この上に基板温度１６０℃。Prior to experiments, the present inventors manufactured a functionally separated photoreceptor according to the present invention under the following conditions. First, a polished cylindrical aluminum substrate 1 is manufactured as a conductive substrate,
On top of this, the substrate temperature is 160℃.
ａ−Ａｓ、Ｓｅ３の蒸発温度３００℃、真空度５ Ｘ
１０−’Ｔｏｒｒの条件下でａ−Ａｓ、Ｓｅ３をＬｐｍ
の膜厚に真空蒸着し、これをＣＧＬ２とした。さ、らに
、このＣＧＬの上に電荷輸送材料としてＮ−エチルカル
バゾール−３−アルデヒドメチルフェニルヒドラゾン〔
分子また溶剤としてテトラヒドロフランを用い、これら
電荷輸送材料、結着剤及び溶剤を重量比で１：１：８で
混合したものを均一な厚みで塗布し、１００℃で１時間
乾燥してＣＴＬ層とした。乾燥後のＣＴＬ層の膜厚は１
６ＪＩ１１である。a-As, Se3 evaporation temperature 300℃, degree of vacuum 5X
Lpm of a-As, Se3 under 10-'Torr condition
The film was vacuum-deposited to a film thickness of , and this was designated as CGL2. Furthermore, N-ethylcarbazole-3-aldehydemethylphenylhydrazone [
Using tetrahydrofuran as the molecule and solvent, a mixture of the charge transport material, binder and solvent in a weight ratio of 1:1:8 is applied to a uniform thickness and dried at 100°C for 1 hour to form a CTL layer. did. The thickness of the CTL layer after drying is 1
It is 6JI11.
このようにして得られた本発明による積層型感光体１の
光感度特性について、従来の５ｅ−Ｔｅ感光体及びｏｐ
ｃ感光体と比較したところ、下記第１表の結果を得た。Regarding the photosensitivity characteristics of the laminated photoreceptor 1 according to the present invention obtained in this way, the conventional 5e-Te photoreceptor and the op.
When compared with photoreceptor C, the results shown in Table 1 below were obtained.
］」−及
この表から明らかなように、本発明によれば従来の感光
体に比し白色光感度が０．７ ｌｕｘ秒と大きく、暗減
衰率（Ｄ Ｄ Ｒ）が３秒で ０．８４と少なく且つ分
光感度特性もＣＧＬの膜厚が１ｐｖａと極めて薄いにも
拘らず第２図に示したように感度が高くしかも長波長域
においてもかなりの感度を有しているといった優れた特
性を有する機能分離型の感光体が得られたのである。] - As is clear from this table, the present invention has a higher white light sensitivity of 0.7 lux seconds than the conventional photoreceptor, and a dark decay rate (DDR) of 0.7 lux seconds at 3 seconds. 84 and has excellent spectral sensitivity characteristics, as shown in Figure 2, despite the extremely thin CGL film thickness of 1 pva, it has high sensitivity and is quite sensitive even in the long wavelength range. A functionally separated photoreceptor having the following characteristics was obtained.
第２図において、白丸（○）は初期帯電電位を１／２に
するのに必要な露光エネルギーを示し、黒丸（・）は該
初期帯電電位をｌ／１０にするのに必要な露光エネルギ
ーを示す。In Figure 2, white circles (○) indicate the exposure energy necessary to reduce the initial charging potential to 1/2, and black circles (.) indicate the exposure energy necessary to reduce the initial charging potential to 1/10. show.
この感光体を、発光ダイオード（ＬＥＤ）を光源とする
プリンタに実装して繰り返し画像を得たが、極めて鮮明
な画像を再現性良く得ることができた。This photoreceptor was mounted on a printer using a light emitting diode (LED) as a light source to repeatedly obtain images, and extremely clear images with good reproducibility could be obtained.
尚、上記の実施例ではａ−八５２ｓｅｓの蒸気圧が高い
ことを利用し、比較的低温で真空蒸着する方法を述べた
が、反応性スパッタリング、プラズマＣ■Ｄなどの方法
で導電性基板上に上記ＣＧＬＪｉ及びＣＴＬ層を形成す
る方法を採り得ることは勿論である。In the above example, a method was described in which vacuum evaporation was performed at a relatively low temperature by taking advantage of the high vapor pressure of A-852ses. Of course, the method of forming the CGLJi and CTL layers described above can be adopted.
また、上記実施例においてａ−ＡｓｘＳｅ３によるＣＧ
Ｌの厚さがＩＪＪｌｌの場合についての特性を記述した
が、実験の結果この厚みが０．５７１１１程度でも電子
写真用感光体としての特性は達成されることが判った。In addition, in the above example, CG by a-AsxSe3
Although the characteristics have been described for the case where the thickness of L is IJJll, it was found from experiments that the characteristics as an electrophotographic photoreceptor can be achieved even when this thickness is about 0.57111.
ただ半導体発光ダイオードあるいは半導体レーザーなど
を光源として用い、比較的長波長領域（約６５０ｎｍ以
上）でより高い光感度を持たせ高性能の印刷機を得たい
場合には、このＣＧＬ層の厚みを上記１μよりも厚く数
μ〜１０／Ｉ１１程度とするのが好ましい。However, if you want to use a semiconductor light-emitting diode or semiconductor laser as a light source and obtain a high-performance printing machine with higher photosensitivity in a relatively long wavelength region (approximately 650 nm or more), the thickness of this CGL layer should be set as above. It is preferable to have a thickness of several microns to about 10/I11, which is thicker than 1 micron.
さらに、本発明による機能分離型の感光体は、ａ−Ａｓ
ｚＳｅｓを単層型として用いた感光体と分光感度はほぼ
同等であり、広範囲の波長領域で高感度が得られるとい
うことはＣＧＬ上のＣＴＬも充分な性能を有しているこ
とを示している。このＣＴＬの膜厚は光源光の透過率に
よって決められるだけでなくキャリヤ輸送の機能及び電
荷保持能力によって決められるべきであり、通常１０〜
３０７ｎ＋ｉの範囲となろう。Furthermore, the functionally separated photoreceptor according to the present invention is made of a-As
The spectral sensitivity is almost the same as that of a photoreceptor using zSes as a single layer type, and the fact that high sensitivity can be obtained in a wide wavelength range indicates that CTL on CGL also has sufficient performance. . The film thickness of this CTL is determined not only by the transmittance of the light source but also by the carrier transport function and charge retention ability, and is usually 10~
It will be in the range of 307n+i.
本発明の感光体を積層型とすることにより、ａ−＾３□
Ｓｅ、のＣＧＬは各種溶媒に対し安定なので、この有機
物系のＣＴＬに傷などの表面欠陥が生じた場合でも、例
えばアセトン、テトラヒドロフランでＣＴＬを溶解除去
でき、再びＣＴＬを塗布することによって感光体の再生
使用が可能となる０本発明者等は、実際にＣＴＬを除去
して新たにＣＴＬを形成して光特性を測定した結果、特
性の変化は見られなかった。By making the photoreceptor of the present invention a laminated type, a-^3□
CGL of Se is stable to various solvents, so even if surface defects such as scratches occur on this organic CTL, the CTL can be dissolved and removed using, for example, acetone or tetrahydrofuran, and the photoreceptor can be reapplied with CTL. The inventors of the present invention actually removed the CTL, formed a new CTL, and measured the optical characteristics, and as a result, no change in the characteristics was observed.
以上述べたように本発明によれば、導電性基板上に別機
能を有するＣＧＬとＣＴＬとを積層した感光体において
、上記ＣＧＬがａ−ＡｓｌＳｅ、により極めて薄い膜厚
で形成されているから、それが例えば１メ蒙程度と薄く
表面がたとえ不均一で欠陥があったとしても、その上を
有機物系からなるＣＴＬで被覆され、従って該ＣＧＬＨ
はＣＴＬ層により保護され得るので結果的に表面欠陥の
ない優れた電気特性を有する電子写真用感光体を得るこ
とができるのである。As described above, according to the present invention, in the photoreceptor in which CGL and CTL having different functions are laminated on a conductive substrate, the CGL is formed of a-AslSe with an extremely thin film thickness. Even if the surface is as thin as about 1 mm and has defects due to unevenness, it will be covered with CTL made of organic material, and therefore the CGLH
can be protected by the CTL layer, and as a result, it is possible to obtain an electrophotographic photoreceptor with no surface defects and excellent electrical properties.
従って、本発明によれば、高価なａ−ＡｓｘＳｅｓであ
っても膜厚が従来に比し、桁違いに薄くできるので材料
費が大幅に低減できると同時に、数ｐｍ程度の厚さで足
りるので技術的にも容易となり感光体が低価格で提供で
きることになる。Therefore, according to the present invention, even if the film is made of expensive a-AsxSes, the film thickness can be made much thinner than that of the conventional film, and the material cost can be significantly reduced. It is technically easier, and the photoreceptor can be provided at a lower price.
第１図は本発明による機能分離型電子写真用感光体の基
本構造を示す断面図である。第２図は本発明による感光
体の波長光感度特性を示すグラフである。
１−・−・・機能分離型電子写真用感光体； ２〜・・
・・導電性基板； ３’−ａ−ＡＳＩＳｅ！を用いた
キャリヤ発生層（ＣＧＬ）；４・−キャリヤ輸送層（、
ＣＴＬ）。
特許出願人：スクンレー電気株式会社
代 理 人：弁理士 平 山 −室
間 −弁理士 海 津 保 三第２図
ＩＬ表（ｎｍ）
特許庁長官 黒 １）明 雄 殿
１、事件の表示
昭和６２年特許願第２３４６０号
２、発明の名称
電子写真用感光体
３、補正をする者
事件との関係 特許出願人
住所 東京都目黒区中目黒２丁目９番１３号名称 （２
３０）スタンレー電気株式会社４、代理人
住所 〒１６０東京都新宿区四谷４−３０−２３ビルド
吉田９階 電話０３ （３５２） １８０８自
発
６、補正の対象
（別 紙）
（１）特許請求の範囲を下記の通り訂正する。
「（１）導電性基板上にキャリヤを発生させる機能を有
するキャリヤ発生層と発生したキャリヤを輸送する機能
を有するキャリヤ輸送層とが積層された機能分離型電子
写真用感光体において、上記キャリヤ発生層がアモルフ
ァス三七レン化ヒ素（ａ−Ａｓ＊５ｅｓ）にて形成され
ていることを特徴とする上記電子写真用感光体。
（２）前記ａ−Ａｓ２Ｓｅ３により形成されたキャリヤ
発生層の厚みが、実質的に１０」−程度以下、好ましく
はＩＪＪＩＩ程度であることを特徴とする特許請求の範
囲第１項に記載の電子写真用感光体。
（３）前記キャリヤ輸送層がＮ−メチル−Ｎ−フている
ことを特徴とする特許請求の範囲第１項に記載゛の電子
写真用感光体、Ｊ
（２）明細書第８頁第７〜８行の「Ｎ−エチルカルバゾ
ール−３−アルデヒドメチルフェニルヒドラゾン」を「
Ｎ−メチル−Ｎ−フェニルヒドラゾン−３−メチリデン
−９−エチルカルバゾール」に訂正する。
手続補正書帽釦
１、事件の表示
３、補正をする者
事件との関係 特許出願人
住所 東京都目黒区中目黒２丁目９番１３号名称 （２
３０）スタンレー電気株式会社４、代理人
住所 〒１６０東京都新宿区四谷４−３ ′ｏ−２３ビ
ルド吉日９階 電話０３（３５２）１８０８６、補正の
対象
明細書の「発明の詳細な説明」の欄
７、補正の内容
別紙のとおり
８、添付書類の目録
（特願昭６２−２３４６０号）
７．補正の内容
（１）明細書第４頁第９〜１０行の「半導体発光ダイオ
ード（ＬＥＤ）、半導体レーザーダイオード」を１発光
ダイオード（ＬＥＤ）、 レーザーダイオード１に訂
正する。
（２）同第１２頁第４行のｒ欠陥が１を削除する。
以上FIG. 1 is a sectional view showing the basic structure of a functionally separated electrophotographic photoreceptor according to the present invention. FIG. 2 is a graph showing the wavelength light sensitivity characteristics of the photoreceptor according to the present invention. 1--Functionally separated electrophotographic photoreceptor; 2--
...Conductive substrate; 3'-a-ASISe! carrier generation layer (CGL); 4-carrier transport layer (,
CTL). Patent applicant: Sukunley Electric Co., Ltd. Agent: Patent attorney Hirayama - Muroma - Patent attorney Kaizu Tamotsu Figure 2 IL table (nm) Commissioner of the Patent Office Kuro 1) Akio Tono 1, Display of the case 1988 Patent Application No. 23460 2, Name of the invention Electrophotographic photoreceptor 3, Relationship with the amended person's case Patent applicant address 2-9-13 Nakameguro, Meguro-ku, Tokyo Name (2
30) Stanley Electric Co., Ltd. 4, Agent address: 9th floor, Build Yoshida, 4-30-23 Yotsuya, Shinjuku-ku, Tokyo 160 Phone: 03 (352) 1808
Issue 6, Subject of Amendment (Attachment) (1) The scope of claims is amended as follows. (1) In a functionally separated electrophotographic photoreceptor in which a carrier generation layer having a function of generating carriers and a carrier transport layer having a function of transporting generated carriers are laminated on a conductive substrate, The above electrophotographic photoreceptor, characterized in that the layer is formed of amorphous arsenic 37renide (a-As*5es). (2) The carrier generation layer formed of a-As2Se3 has a thickness of 2. The electrophotographic photoreceptor according to claim 1, wherein the electrophotographic photoreceptor has a particle diameter of substantially less than about 10'', preferably about IJJII. (3) The electrophotographic photoreceptor according to claim 1, wherein the carrier transport layer comprises N-methyl-N-(2) Specification, page 8, No. 7 ~ Line 8 “N-ethylcarbazole-3-aldehydemethylphenylhydrazone” is changed to “
N-methyl-N-phenylhydrazone-3-methylidene-9-ethylcarbazole". Procedural amendment cap button 1, case display 3, person making the amendment Relationship with the case Patent applicant address 2-9-13 Nakameguro, Meguro-ku, Tokyo Name (2)
30) Stanley Electric Co., Ltd. 4, Agent Address: 9th Floor, Build Kitoshihichi, 4-3 'o-23 Yotsuya, Shinjuku-ku, Tokyo 160 Telephone: 03 (352) 18086, "Detailed Description of the Invention" in the Specification Subject to Amendment Column 7, contents of the amendment as shown in attached sheet 8, list of attached documents (Patent Application No. 1982-23460) 7. Contents of amendment (1) "Semiconductor light emitting diode (LED), semiconductor laser diode" on page 4, lines 9-10 of the specification is corrected to 1 light emitting diode (LED), laser diode 1. (2) The r defect on the 4th line of page 12 deletes 1. that's all
Claims (3)
るキャリヤ発生層と発生したキャリヤを輸送する機能を
有するキャリヤ輸送層とが積層された機能分離型電子写
真用感光体において、上記キャリヤ発生層がアモルファ
ス三セレン化ヒ素（ａ−Ａｓ＿２Ｓｅ＿３）にて形成さ
れていることを特徴とする上記電子写真用感光体。(1) In a functionally separated electrophotographic photoreceptor in which a carrier generation layer having a function of generating carriers and a carrier transport layer having a function of transporting generated carriers are laminated on a conductive substrate, the carrier generation layer The electrophotographic photoreceptor described above is formed of amorphous arsenic triselenide (a-As_2Se_3).
リヤ発生層の厚みが、実質的に１０μｍ程度以下、好ま
しくは１μｍ程度であることを特徴とする、特許請求の
範囲第１項に記載の電子写真用感光体。(2) The electrophotographic device according to claim 1, characterized in that the carrier generation layer formed of the a-As_2Se_3 has a thickness of substantially about 10 μm or less, preferably about 1 μm. Photoreceptor.
３−アルデヒドメチルフェニルヒドラゾンなどの有機物
質にて形成されていることを特徴とする、特許請求の範
囲第１項に記載の電子写真用感光体。(3) The carrier transport layer is N-ethylcarbazole-
The photoreceptor for electrophotography according to claim 1, characterized in that it is formed of an organic substance such as 3-aldehydemethylphenylhydrazone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2346087A JPS63192052A (en) | 1987-02-05 | 1987-02-05 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2346087A JPS63192052A (en) | 1987-02-05 | 1987-02-05 | Electrophotographic sensitive body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63192052A true JPS63192052A (en) | 1988-08-09 |
Family
ID=12111123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2346087A Pending JPS63192052A (en) | 1987-02-05 | 1987-02-05 | Electrophotographic sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63192052A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5546760A (en) * | 1978-09-29 | 1980-04-02 | Ricoh Co Ltd | Electrophotographic photoreceptor |
| JPS55155358A (en) * | 1979-05-23 | 1980-12-03 | Hitachi Ltd | Composite type electrophotographic plate |
-
1987
- 1987-02-05 JP JP2346087A patent/JPS63192052A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5546760A (en) * | 1978-09-29 | 1980-04-02 | Ricoh Co Ltd | Electrophotographic photoreceptor |
| JPS55155358A (en) * | 1979-05-23 | 1980-12-03 | Hitachi Ltd | Composite type electrophotographic plate |
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