JPS6318863B2 - - Google Patents
Info
- Publication number
- JPS6318863B2 JPS6318863B2 JP54164267A JP16426779A JPS6318863B2 JP S6318863 B2 JPS6318863 B2 JP S6318863B2 JP 54164267 A JP54164267 A JP 54164267A JP 16426779 A JP16426779 A JP 16426779A JP S6318863 B2 JPS6318863 B2 JP S6318863B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- semiconductor
- drain
- drain regions
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16426779A JPS5687369A (en) | 1979-12-18 | 1979-12-18 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16426779A JPS5687369A (en) | 1979-12-18 | 1979-12-18 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5687369A JPS5687369A (en) | 1981-07-15 |
JPS6318863B2 true JPS6318863B2 (enrdf_load_stackoverflow) | 1988-04-20 |
Family
ID=15789831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16426779A Granted JPS5687369A (en) | 1979-12-18 | 1979-12-18 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5687369A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5897872A (ja) * | 1981-12-08 | 1983-06-10 | Nec Corp | 不揮発性半導体記憶装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS581051Y2 (ja) * | 1978-07-03 | 1983-01-10 | 株式会社東芝 | 鉄道車両用砂散布装置 |
-
1979
- 1979-12-18 JP JP16426779A patent/JPS5687369A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5687369A (en) | 1981-07-15 |
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