JPS63181385A - Cooler for cryogenic computer - Google Patents
Cooler for cryogenic computerInfo
- Publication number
- JPS63181385A JPS63181385A JP62012376A JP1237687A JPS63181385A JP S63181385 A JPS63181385 A JP S63181385A JP 62012376 A JP62012376 A JP 62012376A JP 1237687 A JP1237687 A JP 1237687A JP S63181385 A JPS63181385 A JP S63181385A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- cooling plate
- low
- cryostat
- cooled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 30
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Landscapes
- Devices That Are Associated With Refrigeration Equipment (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はコンビ、−夕の冷却装置に係り、特に冷却源と
して極低温冷凍機を使用して好適な極低温コンピュータ
の冷却装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a combination cooling system, and more particularly to a cooling system for a cryogenic computer that uses a cryogenic refrigerator as a cooling source. be.
半導体素子を実装したCPUおよびメモリを極低温に冷
却して動作させるコンビ、−夕の公知例としてはエヌ、
ビー、ニス、スペシャルパブリケーシ璽ン607(19
81年)第93頁から第102頁(NBS、 8pec
ial Pub目canon 607(1981)P
93〜102)にをいて超電導コンピュータの冷却シス
テムが論じられている。A combination that operates by cooling a CPU and memory mounted with semiconductor elements to an extremely low temperature.
Bee, Varnish, Special Publication Code 607 (19
1981) pages 93 to 102 (NBS, 8pec)
ial Pub canon 607 (1981) P
93-102), cooling systems for superconducting computers are discussed.
上記従来技術は超電動現象を応用したコンピュータに関
する冷却システムの概念を示したものであるが、CPU
およびメモリを液化ガスの中に直接浸漬する方式である
ため、クライオスタットの構造が複雑になるうえ、液化
ガスの取扱いが煩雑になるという問題があった。The above-mentioned conventional technology shows the concept of a cooling system for a computer that applies the superelectric phenomenon.
Moreover, since the memory is directly immersed in the liquefied gas, the structure of the cryostat is complicated, and the handling of the liquefied gas is complicated.
本発明の目的は、構造が簡単で、液化ガスの取扱いを必
要としない極低温コンピュータの冷却装置を提供するこ
とにある。An object of the present invention is to provide a cooling device for a cryogenic computer that has a simple structure and does not require the handling of liquefied gas.
上記の目的は、断熱膨張によって低温になった動作ガス
を流すガス流路を内蔵し、ガスを流すことによつて自身
も低温になる冷却板と、CPUおよびメ、モリとして機
能する半導体素子を埋設した基板を熱交換可能のように
密着状態に装着することによって達成される。The above purpose is to have a built-in gas flow path through which operating gas that has become cold due to adiabatic expansion, a cooling plate that also becomes cold when the gas flows through it, and a semiconductor element that functions as a CPU, memory, and memory. This is achieved by mounting the buried substrate in close contact to enable heat exchange.
圧縮機、熱交換器、膨張タービンを使って発生した墜冷
によって冷却された冷却板とCPUおよびメモリを実装
した基板含熱的に接触させることによってCPUおよび
メモリの冷却が可能になるので液化ガスを使月する必要
がなく、クライオスタットの構造が簡単になろうえ、液
化ガスの取扱い作業が不要になる。The CPU and memory can be cooled by bringing them into thermal contact with the cooling plate that has been cooled by down cooling generated using a compressor, heat exchanger, and expansion turbine. The structure of the cryostat becomes simpler, and the work of handling liquefied gas becomes unnecessary.
以下1本発明の一実施例を第1図、第2図によって説明
する。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
1は0M08等の半導体素子を実装したCPU。1 is a CPU mounted with a semiconductor element such as 0M08.
2は同様のメモリ、3は入出力インターフ、イス、4は
CPU1およびメモリ2と入出力インターフェイス3の
間を連絡するリード線、5は低温部品を収納するクライ
オスタット、6は動作ガス(例えばヘリウム)を圧縮す
る圧縮機、7は熱交換器、8は膨張タービン、9は冷却
板、10.11はヘッダー、認は高圧ライン%z3は低
圧ライン%14は基板、郷は半導体素子、!6は冷却板
9の中に設けられた動作ガスの流路、17は冷却板9と
CPUI(又はメモリ2)の基板14を密着接触させる
ための結合用金具(ボルト、ナツト等)である。2 is a similar memory, 3 is an input/output interface, a chair, 4 is a lead wire connecting between the CPU 1 and memory 2, and the input/output interface 3, 5 is a cryostat that houses low temperature parts, and 6 is an operating gas (for example, helium). , 7 is a heat exchanger, 8 is an expansion turbine, 9 is a cooling plate, 10.11 is a header, % is a high pressure line %z3 is a low pressure line % 14 is a substrate, Go is a semiconductor element, ! Reference numeral 6 denotes a working gas flow path provided in the cooling plate 9, and 17 denotes coupling fittings (bolts, nuts, etc.) for bringing the cooling plate 9 into close contact with the substrate 14 of the CPUI (or memory 2).
次に本実施例の作用について説明すると、圧縮機6を吐
出された高圧の動作ガスは高圧ライン鵞を経て熱交換器
7に入る。熱交換器7を通る過程で低圧、低温の戻りガ
スと熱交換して冷却され、高圧、低温のガスとなり、膨
張タービン8に供給される。膨張タービン8に入っよ高
圧、低温の動作ガスは、ここで断熱膨張して低圧で、さ
らに低温のガスとなって冷却板9のヘッダー10に送ら
れる。ヘッダー10に送り込まれた動作ガスは冷却板9
の中の流路16 (一般には複数)を通り、出口側のヘ
ッダー11に集められ、熱交換器7の低圧側、低圧ライ
ン13を経て圧縮機6にもどる。低温の動作ガスが流路
16を流れることによって、冷却板9が低温になり、冷
却板9に密着して装着されたCPUI(およびメモリ2
)の基板14が冷却され、さらに半導体素子市が冷却さ
れる。Next, the operation of this embodiment will be explained. The high pressure working gas discharged from the compressor 6 enters the heat exchanger 7 through the high pressure line. In the process of passing through the heat exchanger 7, the gas is cooled by exchanging heat with the low-pressure, low-temperature return gas, and becomes a high-pressure, low-temperature gas, which is then supplied to the expansion turbine 8. The high-pressure, low-temperature working gas that enters the expansion turbine 8 undergoes adiabatic expansion here, becomes a low-pressure, even lower-temperature gas, and is sent to the header 10 of the cooling plate 9. The operating gas fed into the header 10 is transferred to the cooling plate 9.
It passes through channels 16 (generally more than one) in the header 11 on the outlet side and returns to the compressor 6 via the low pressure side of the heat exchanger 7 and the low pressure line 13. As the low-temperature operating gas flows through the flow path 16, the cooling plate 9 becomes low temperature, and the CPU (and memory 2) mounted in close contact with the cooling plate 9
) is cooled, and the semiconductor element is further cooled.
こ二で冷却板9の材質としては熱伝導率のよい銅、アル
ミニウム等がよく、基板14の材質としては電気絶縁性
にすく0れ、熱伝導率のよいセラミック等が適している
。The material for the cooling plate 9 is preferably copper, aluminum, etc., which have good thermal conductivity, and the material for the substrate 14 is preferably ceramic, which has good electrical insulation properties and good thermal conductivity.
本実施例によれば、CPUIおよびメモリ2を液化ガス
に浸漬することなく冷却することができるので、クライ
オスタット5の内部に液化ガス槽を設けなくてすみ、ク
ライオスタット5の構造が簡単になるうえ、液化ガスを
取扱う煩雑さがなくなるという効果がある。According to this embodiment, since the CPUI and memory 2 can be cooled without being immersed in liquefied gas, there is no need to provide a liquefied gas tank inside the cryostat 5, and the structure of the cryostat 5 is simplified. This has the effect of eliminating the complexity of handling liquefied gas.
第3図、第4図は本発明の他の実施例を示すもので、第
1図の実施例との相違点は動作ガスが冷却板9を通った
後に膨張タービン8に入るようになっており、冷却板9
の流路16の中を流れるガスが高圧だという点である。3 and 4 show other embodiments of the present invention, and the difference from the embodiment of FIG. 1 is that the working gas enters the expansion turbine 8 after passing through the cooling plate 9. cage, cooling plate 9
The gas flowing through the flow path 16 is at high pressure.
したがって、冷却板9の流路16を流れるガスの密度が
大きくなり、流路16の断面積およびガス流量が同じで
みればガス流通が低くなる。ガス流速が低下すると伝達
特性も低下し、基板14さらにはCPU lおよびメモ
リ2の冷却性能も低下する。Therefore, the density of the gas flowing through the channel 16 of the cooling plate 9 increases, and if the cross-sectional area of the channel 16 and the gas flow rate are the same, the gas flow becomes low. As the gas flow rate decreases, the transfer characteristics also decrease, and the cooling performance of the substrate 14 as well as the CPU 1 and the memory 2 also decreases.
それを防止するための手段として流路16の断面積を小
さくしてガス流速を増すとともに、冷却板9と基板14
の密着度をよくするために、結合金具17の数を増すべ
く1周辺のみでな曵流路16の間にも結合金具18を追
加した構造としている。As a means to prevent this, the cross-sectional area of the flow path 16 is reduced to increase the gas flow velocity, and the cooling plate 9 and the substrate 14 are
In order to improve the degree of adhesion, the number of coupling fittings 17 is increased by adding coupling fittings 18 not only around one periphery but also between the channels 16.
本発明によれば、CPUおよびメモリを液化ガスに浸漬
することな畷冷却する二とができるのでクライオスタッ
トの内部に液化ガス槽を設けなくてすみクライオスタッ
トの構造が簡単になるうえ。According to the present invention, since the CPU and memory can be cooled without immersing them in liquefied gas, there is no need to provide a liquefied gas tank inside the cryostat, and the structure of the cryostat is simplified.
液化ガスを取扱う煩雑さがなくなるという効果がある。This has the effect of eliminating the complexity of handling liquefied gas.
第1図は本発明の一実施例であるシステム系統図、第2
図は第1図の1−1断面図、第3図は本発明の他の実施
例を示すシステム系統図、第4図は第3図のn−n断面
因である。
1・・・・・・CPU、2・・・・・・メモリ、3・・
・・・・インターフェイス、5・・・・・・保冷槽、6
・・・・・・圧縮機、8・・・・・・膨張タービン、9
・・・・・・冷却板
41図
−’212図Figure 1 is a system system diagram that is an embodiment of the present invention;
The figures are a cross-sectional view taken along line 1-1 in FIG. 1, FIG. 3 is a system system diagram showing another embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along line nn in FIG. 1...CPU, 2...Memory, 3...
...Interface, 5...Cold tank, 6
...Compressor, 8...Expansion turbine, 9
・・・・・・Cooling plate 41 figure-'212 figure
Claims (1)
下で動作させるコンピュータの冷却装置において、圧縮
機、熱交換器、膨張機およびこれらの各機器を連結する
配管からなり、膨張機前後の配管途中にガスの流路を有
する冷却板を配置するとともに該冷却板に前記半導体素
子を埋設した基板を密着状態に装着したことを特徴とす
る極低温コンピュータの冷却装置。1. In a cooling system for a computer that uses semiconductor elements for the CPU and memory and operates at extremely low temperatures, it consists of a compressor, heat exchanger, expander, and piping that connects these devices, and the piping before and after the expander 1. A cooling device for a cryogenic computer, characterized in that a cooling plate having a gas flow path is disposed therebetween, and a substrate in which the semiconductor element is embedded is tightly attached to the cooling plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62012376A JPS63181385A (en) | 1987-01-23 | 1987-01-23 | Cooler for cryogenic computer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62012376A JPS63181385A (en) | 1987-01-23 | 1987-01-23 | Cooler for cryogenic computer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63181385A true JPS63181385A (en) | 1988-07-26 |
Family
ID=11803550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62012376A Pending JPS63181385A (en) | 1987-01-23 | 1987-01-23 | Cooler for cryogenic computer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63181385A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6771509B2 (en) | 1992-05-20 | 2004-08-03 | Seiko Epson Corporation | Cartridge for electronic devices |
US7804688B2 (en) | 1992-05-20 | 2010-09-28 | Seiko Epson Corporation | Apparatus including processor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5327769A (en) * | 1976-08-25 | 1978-03-15 | Akebono Brake Ind Co Ltd | Automatic adjusting device for drum brake clearance |
JPS5590730A (en) * | 1978-12-26 | 1980-07-09 | Bendix Corp | Automatic abrasion adjuster for lining of nonnservo type drum brake |
-
1987
- 1987-01-23 JP JP62012376A patent/JPS63181385A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5327769A (en) * | 1976-08-25 | 1978-03-15 | Akebono Brake Ind Co Ltd | Automatic adjusting device for drum brake clearance |
JPS5590730A (en) * | 1978-12-26 | 1980-07-09 | Bendix Corp | Automatic abrasion adjuster for lining of nonnservo type drum brake |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6771509B2 (en) | 1992-05-20 | 2004-08-03 | Seiko Epson Corporation | Cartridge for electronic devices |
US6845014B2 (en) | 1992-05-20 | 2005-01-18 | Seiko Epson Corporation | Cartridge for electronic devices |
US7035108B2 (en) | 1992-05-20 | 2006-04-25 | Seiko Epson Corporation | Information processing device |
US7345883B2 (en) | 1992-05-20 | 2008-03-18 | Seiko Epson Corporation | Processing device |
US7359202B2 (en) | 1992-05-20 | 2008-04-15 | Seiko Epson Corporation | Printer apparatus |
US7583505B2 (en) | 1992-05-20 | 2009-09-01 | Seiko Epson Corporation | Processor apparatus |
US7804688B2 (en) | 1992-05-20 | 2010-09-28 | Seiko Epson Corporation | Apparatus including processor |
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