JPS63175226A - Production of magnetic recording medium - Google Patents
Production of magnetic recording mediumInfo
- Publication number
- JPS63175226A JPS63175226A JP495387A JP495387A JPS63175226A JP S63175226 A JPS63175226 A JP S63175226A JP 495387 A JP495387 A JP 495387A JP 495387 A JP495387 A JP 495387A JP S63175226 A JPS63175226 A JP S63175226A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- protective layer
- recording medium
- magnetic recording
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 229910002090 carbon oxide Inorganic materials 0.000 abstract 2
- 239000010408 film Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は磁気記録媒体の製造法に係り、特にその金a薄
ate性層上に保X1層を形成させる磁気記録媒体の製
造法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a magnetic recording medium, and more particularly to a method for manufacturing a magnetic recording medium in which a protective X1 layer is formed on a thin gold layer.
[従来の技術]
計算機の外部記憶装置等として使用される磁気ディスク
装置においては、高記録密度を達成する手段として金属
WI膜磁性層を有する磁気記録媒体が賞月されている。[Prior Art] In magnetic disk devices used as external storage devices for computers, etc., magnetic recording media having a metal WI film magnetic layer are being used as a means of achieving high recording density.
しかし金属薄膜磁性層はヘッドとの機械的接触によって
傷つき易く、また耐蝕性にも難点があるため、その上部
にこれらの欠点を補うための保IImを設けることが不
可欠である。However, since the metal thin film magnetic layer is easily damaged by mechanical contact with the head and has drawbacks in its corrosion resistance, it is essential to provide a retainer IIm on top of it to compensate for these drawbacks.
保護層が満たすべき条件としては、
1) 保護層の厚みぶんだけ実効的なヘッド浮上距離が
増し、記録再生特性が低下するため、できるだけ膜厚の
薄いものであること。The conditions that the protective layer must satisfy are as follows: 1) The thickness of the protective layer must be as thin as possible, since the effective flying distance of the head increases by the thickness of the protective layer and the recording and reproducing characteristics deteriorate.
2) 膜強度、l!付着力等が充分大きく、ヘッドとの
機械的摺動による保護膜の摩耗、剥離。2) Membrane strength, l! The adhesion force is sufficiently large that the protective film will wear out or peel off due to mechanical sliding with the head.
キズの発生等が起こらないこと。No scratches, etc. will occur.
3)ヘッドとの摩擦係数の小さいこと。3) Low coefficient of friction with the head.
4)成膜が容易で低コストであること。4) Film formation is easy and low cost.
5)耐蝕性に優れていること。5) Excellent corrosion resistance.
等が要求される。etc. are required.
これらの要求をほぼ満足する保護層としては従来炭素、
vi化珪素、vi化珪素を材料とするものが、一部の磁
気ディスクで採用されていた。Conventional protective layers that almost satisfy these requirements include carbon,
Silicon vi ride and those made of silicon vi ride have been used in some magnetic disks.
[発明が解決すべき問題点]
しかし前述の如く、磁気ディスクの保護層はより膜厚の
薄いものが要求されるが、従来の成膜法で形成されたこ
れらの保護層は一定以下の膜厚ではヘッドとの摺動に対
する機械的耐久性が不充分であるという欠点をもってい
た。[Problems to be solved by the invention] However, as mentioned above, the protective layer of a magnetic disk is required to have a thinner film thickness, but these protective layers formed by conventional film forming methods have a film thickness below a certain level. If the thickness is too thick, the mechanical durability against sliding with the head is insufficient.
本発明者はこのような事情に鑑み、一定膜厚以下の保護
層でも前述の条件を充分満足するような保護層の形成法
を鋭意検討の結果、本発明に到達した。In view of these circumstances, the inventors of the present invention have arrived at the present invention as a result of intensive studies on a method for forming a protective layer that fully satisfies the above-mentioned conditions even when the thickness of the protective layer is below a certain level.
[問題点を解決するための手段]
本発明の磁気記録媒体の製造法によれば、金属2I膜磁
性層上に設けられる保護層を、炭素もしくは酸化珪素も
しくは窒化珪素からなるターゲットを、ターゲット・基
板間距離とスパッタガス圧との積を5×10 Torr
−1以下とする条件下でスパッタすることにより形成せ
しめる。[Means for Solving the Problems] According to the method of manufacturing a magnetic recording medium of the present invention, the protective layer provided on the metal 2I film magnetic layer is replaced by a target made of carbon, silicon oxide, or silicon nitride. The product of the distance between the substrates and the sputtering gas pressure is 5×10 Torr.
It is formed by sputtering under conditions of -1 or less.
本発明の磁気記録媒体は、該保護層の膜厚を1000A
未満とすることによって得られる。In the magnetic recording medium of the present invention, the thickness of the protective layer is 1000A.
Obtained by making it less than.
炭素もしくは酸化珪素もしくは窒化珪素からなるターゲ
ットを、ターゲット−基板間距離とスパッタガス圧との
積が5×110−2TOrr−Cを越える条件下でスパ
ッタすることにより、保護層を形成した場合、該保護層
の膜厚を1000Δ以上にしないと充分な機械的耐久性
、耐摩耗性等を得ることができない。しかし100OA
以上の保護層を磁性in上に設けることは、ヘッドの実
効浮上距離がそれだけ増すことを意味し、記録再生特性
が低下するため、高記録密度媒体として不適当である。When a protective layer is formed by sputtering a target made of carbon, silicon oxide, or silicon nitride under conditions where the product of the target-substrate distance and the sputtering gas pressure exceeds 5 x 110-2 TOrr-C, Unless the thickness of the protective layer is 1000Δ or more, sufficient mechanical durability, abrasion resistance, etc. cannot be obtained. But 100OA
Providing the above protective layer on the magnetic layer means that the effective flying distance of the head increases accordingly, and the recording and reproducing characteristics deteriorate, making it unsuitable for use as a high recording density medium.
本発明に用いられるスパッタガスの種類については特に
これを限定しないが、スパッタ効率の高いアルゴンを主
体とするガスが工業上望ましい。Although the type of sputtering gas used in the present invention is not particularly limited, it is industrially desirable to use a gas mainly composed of argon because of its high sputtering efficiency.
特にターゲットが5i02またはSi3N4である場合
は、アルゴンに酸素または窒素を適宜混合することも、
得られる保護層の耐久性を改善するうえで効果がある。Especially when the target is 5i02 or Si3N4, it is also possible to mix oxygen or nitrogen with argon as appropriate.
It is effective in improving the durability of the resulting protective layer.
本発明の磁気記録媒体に使用される基板としては、アル
ミニウム、ガラス、セラミックス、プラスチックスなど
が可能である。またこの基板上に形成される金属薄膜磁
性層としては、Fe、Co。The substrate used in the magnetic recording medium of the present invention can be made of aluminum, glass, ceramics, plastics, etc. The metal thin film magnetic layer formed on this substrate is made of Fe or Co.
Ni等の磁性金属またはこれらを含む合金を蒸着。Vapor deposition of magnetic metals such as Ni or alloys containing these.
スパッタリング、メッキ、イオンブレーティング等の方
法で成膜したものを用いる。A film formed by a method such as sputtering, plating, or ion blating is used.
[作用1
本発明の方法により機械的耐久性に優れた保護層の得ら
れる理由は明らかではないが、基板間距離とスパッタガ
ス圧との積が5xlO−2Torr・α以下の条件でス
パッタリングが行われた場合、スパッタ粒子が基板に到
達する間にスパッタガスとの衝突で失うエネルギーが充
分小さく、高エネルギーのスパッタ粒子による成膜が行
われるため、保護膜と下地との付着力或いは保護膜を構
成する原子間の結合状態が改善されるためとも考えられ
る。[Effect 1] The reason why a protective layer with excellent mechanical durability can be obtained by the method of the present invention is not clear, but sputtering is performed under conditions where the product of the distance between substrates and the sputtering gas pressure is 5xlO-2Torr・α or less. When the sputtered particles reach the substrate, the energy lost due to collision with the sputtering gas is sufficiently small, and the film is formed using high-energy sputtered particles. This is also considered to be because the bonding state between the constituent atoms is improved.
[実施例]
以下に実施例をあげ、本発明を更に詳細に説明するが、
本発明の適用範囲はこれらの実施例によって何ら限定さ
れるものではない。[Example] The present invention will be explained in more detail with reference to Examples below.
The scope of application of the present invention is not limited in any way by these Examples.
実施例1〜4.比較例1〜5
円盤状のアルミ合金にNiPメツキ膜を被覆後、平均表
面粗さ70Aに研磨することにより基板を得た。Examples 1-4. Comparative Examples 1 to 5 A disk-shaped aluminum alloy was coated with a NiP plating film and then polished to an average surface roughness of 70A to obtain a substrate.
次にこの基板上にスパッタリング法により、非磁性下地
層を成膜した後Niを20原子パーセント含むGo合金
磁性層を膜厚500Aで成膜した。Next, a nonmagnetic underlayer was formed on this substrate by sputtering, and then a Go alloy magnetic layer containing 20 atomic percent of Ni was formed to a thickness of 500 Å.
更に保護膜としてグラフ7イトをターゲットとして表1
に示す条件下、Arガスでスパッタリングを行い、上記
磁性層上に製法を異とするカーボン層を形成した。ただ
しカーボン層の膜厚は全て900Aとした。Table 1 further targeted graph 7ite as a protective film.
Sputtering was performed using Ar gas under the conditions shown in Figure 1 to form a carbon layer manufactured using a different method on the magnetic layer. However, the thickness of all carbon layers was 900A.
このようにして得た磁気ディスクに対し、中心から40
mの点にフェライト球(3#IIIφ)を荷重6gfで
押しつけ、1100rpで回転摺動させてディスク表面
にキズが入るまでの時間を測定した。For the magnetic disk obtained in this way,
A ferrite ball (3#IIIφ) was pressed against the point m with a load of 6 gf, rotated and slid at 1100 rpm, and the time until scratches appeared on the disk surface was measured.
その結果を同じく表1に示した。The results are also shown in Table 1.
実施例5〜8.比較例6〜10
実施例1〜4.比較例1〜5と同じく、NiPメツキ被
覆アルミ合金基板上に金属薄膜磁性層を形成した後、保
護膜として酸化珪素をターゲットとして表2に示す条件
下、Arガス中でスパッタリングを行い製法を異とする
酸化珪素層を形成した。ただし酸化珪lA層の膜厚は全
て900Aとした。こうして得られた磁気ディスクの機
械的摺動に対する耐久テスト結果を同じく表2に示した
。Examples 5-8. Comparative Examples 6-10 Examples 1-4. As in Comparative Examples 1 to 5, a metal thin film magnetic layer was formed on a NiP plating-coated aluminum alloy substrate, and then sputtering was performed in Ar gas using silicon oxide as a target as a protective film under the conditions shown in Table 2. A silicon oxide layer was formed. However, the film thickness of the silicon oxide lA layer was all 900A. The results of the mechanical sliding durability test of the magnetic disk thus obtained are also shown in Table 2.
実施例9〜12.比較例11〜15
実施例1〜4.比較例1〜5と同じく、NiPメツキ被
覆アルミ合金基板上に金属薄膜磁性層を形成した後、保
護膜として窒化珪素をターゲットとして表3に示す条件
下、Arガス中でスパッタリングを行い製法を異とする
窒化珪素層を形成した。ただし窒化珪素層の膜厚は全て
900Aとした。こうして得られた磁気ディスクの機械
的摺動に対する耐久テスト結果を同じく表3に示した。Examples 9-12. Comparative Examples 11-15 Examples 1-4. As in Comparative Examples 1 to 5, a metal thin film magnetic layer was formed on a NiP plating-coated aluminum alloy substrate, and then sputtering was performed in Ar gas using silicon nitride as a target as a protective film under the conditions shown in Table 3. A silicon nitride layer was formed. However, the thickness of all silicon nitride layers was 900A. The results of the mechanical sliding durability test of the magnetic disk thus obtained are also shown in Table 3.
[発明の効果]
以上の説明から明らかなように、本発明の方法によれば
、金属磁性f1股上に設けられた保護層の膜厚が100
0A未満であるにもかかわらず、ヘッドとの摺動に対す
る耐久性の優れた磁気記録媒体を得ることができるため
、より高記録密度の磁気記録媒体の製造が可能である。[Effects of the Invention] As is clear from the above explanation, according to the method of the present invention, the thickness of the protective layer provided on the metal magnetic f1 crotch is 100 mm.
Although it is less than 0A, it is possible to obtain a magnetic recording medium that has excellent durability against sliding with the head, so it is possible to manufacture a magnetic recording medium with higher recording density.
Claims (2)
けられる保護層とで構成される磁気記録媒体を製造する
方法において、該保護層を炭素もしくは酸化珪素もしく
は窒化珪素からなるターゲットを、ターゲット・基板間
距離とスパッタガス圧との積を5×10^−^2Tor
r・cm以下とする条件下でスパッタすることにより形
成することを特徴とする磁気記録媒体の製造法。(1) In a method for manufacturing a magnetic recording medium consisting of at least a substrate, a metal thin film magnetic layer, and a protective layer provided on top of the substrate, the protective layer is replaced with a target made of carbon, silicon oxide, or silicon nitride. The product of the distance between the substrates and the sputtering gas pressure is 5 x 10^-^2 Tor.
1. A method for manufacturing a magnetic recording medium, characterized in that it is formed by sputtering under conditions of r.cm or less.
、該保護層の膜厚を1000Å未満となる様に形成させ
る磁気記録媒体の製造法。(2) A method for manufacturing a magnetic recording medium according to claim (1), in which the protective layer is formed to have a thickness of less than 1000 Å.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP495387A JPS63175226A (en) | 1987-01-14 | 1987-01-14 | Production of magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP495387A JPS63175226A (en) | 1987-01-14 | 1987-01-14 | Production of magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63175226A true JPS63175226A (en) | 1988-07-19 |
Family
ID=11597941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP495387A Pending JPS63175226A (en) | 1987-01-14 | 1987-01-14 | Production of magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63175226A (en) |
-
1987
- 1987-01-14 JP JP495387A patent/JPS63175226A/en active Pending
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