JPS63164451A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63164451A JPS63164451A JP31246186A JP31246186A JPS63164451A JP S63164451 A JPS63164451 A JP S63164451A JP 31246186 A JP31246186 A JP 31246186A JP 31246186 A JP31246186 A JP 31246186A JP S63164451 A JPS63164451 A JP S63164451A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- semiconductor device
- dimethylsiloxane
- resin composition
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000003822 epoxy resin Substances 0.000 claims abstract description 81
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 81
- 239000000203 mixture Substances 0.000 claims abstract description 32
- -1 dimethylsiloxane Chemical class 0.000 claims abstract description 22
- 229920003986 novolac Polymers 0.000 claims abstract description 15
- 239000011256 inorganic filler Substances 0.000 claims abstract description 6
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 4
- 150000002897 organic nitrogen compounds Chemical class 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 238000007789 sealing Methods 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 2
- 229920005989 resin Polymers 0.000 description 20
- 239000011347 resin Substances 0.000 description 20
- 229920001296 polysiloxane Polymers 0.000 description 7
- 230000035882 stress Effects 0.000 description 7
- 239000007863 gel particle Substances 0.000 description 6
- 238000001721 transfer moulding Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000004668 long chain fatty acids Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035946 sexual desire Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、低応力性に優れた封止樹脂を備え、信頼性
が極めて向上している半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor device that is equipped with a sealing resin that has excellent low stress properties and has extremely improved reliability.
トランジスタ、ＩＣ，ＬＳＩ等の半導体素子は、機械的
強度、耐湿性の点からセラミックスや樹脂を用いて封止
されている。このうちセラミックスパツケージは耐湿性
、熱放散性が良好なため、信頼性の極めて高い封止が可
能であり、それによって高度な信頼性を有する半導体装
置を得ることができる。しかしながら、セラミックス材
料が高価であり、また量産性に劣る欠点があるため最近
では樹脂による半導体素子の封止が主流を占めている。Semiconductor elements such as transistors, ICs, and LSIs are sealed using ceramics and resins from the viewpoint of mechanical strength and moisture resistance. Among these, the ceramic package has good moisture resistance and heat dissipation, so it can be sealed with extremely high reliability, and thereby a highly reliable semiconductor device can be obtained. However, ceramic materials are expensive and have disadvantages in that they are not suitable for mass production, so recently, resins have become the mainstream for encapsulating semiconductor elements.
それらの樹脂のなかでもエポキシ樹脂組成物が賞月され
ているが、ＤＲＡＭ、ＭＰＵに代表される半導体素子の
高集積化、大型化に伴い、半導体装置の使用時に発生す
る熱による障害および半導体素子に加えられる熱応力が
大きくなってきていて、半導体素子のパッシベーション
膜にクラックが発生したりアルミ配線が変形したりする
不良が発生し易い状態になっており、半導体装置の信頼
性という点で不安がある。このため、上記封止樹脂の熱
伝導性の向上ならびに熱応力の低減について強い要請が
あり、そのような樹脂の開発が特に望まれている。Among these resins, epoxy resin compositions have been praised, but as semiconductor devices such as DRAMs and MPUs become more highly integrated and larger, damage caused by heat that occurs when semiconductor devices are used, and Thermal stress applied to semiconductor devices is increasing, and defects such as cracks in the passivation film of semiconductor elements and deformation of aluminum wiring are likely to occur, raising concerns about the reliability of semiconductor devices. There is. Therefore, there is a strong demand for improving the thermal conductivity and reducing thermal stress of the sealing resin, and the development of such a resin is particularly desired.
上記のような要望に応えて、低応力半導体封止用エポキ
シ樹脂組成物としては、エポキシ樹脂。In response to the above demands, epoxy resins are used as low-stress epoxy resin compositions for semiconductor encapsulation.
ノボラック型フェノール樹脂硬化剤、離型剤および低応
力化剤としてのゴム成分等を配合したエポキシ樹脂組成
物が広く用いられている。しかしながら、このような低
応力エポキシ樹脂組成物を用い、トランスファー成形し
て得られる半導体装置は、上記樹脂封止形半導体装置に
要求される低応力性の要請を満たさず、満足すべき低応
力性を備えていない、また、上記のようなエポキシ樹脂
組成物を用いてトランスファー成形する場合において、
ゴム等の柔軟性のある低力化剤が、成形される半導体装
置の表面から脱離して金型汚れの原因になるという難点
も生じている。他方、本願発明における（Ａ）成分の合
成に用いると同様のジメチルシロキサンを用い、これと
ノボラック型エポキシ樹脂とをメチルエチルケトン（Ｍ
ＥＫ）中で、予め反応させて所謂シリコーンゲル粒子を
つ（す、これを低応力化剤止してエポキシ樹脂組成物中
に配合するという技術が、先行発明中に実施例として記
載されている（特開昭５８−２１４１７号公報）。とこ
ろが、このようにして得られる、シリコーンゲル粒子を
配合したエポキシ樹脂組成物においては、シリコーンゲ
ル粒子は粒子状でそれぞれ独立して遊離状態で存在して
いるため、トランスファー成形時において、やはりシリ
コーンゲルが脱離し、金型汚れを引き起こすという難点
を生じている。Epoxy resin compositions containing a novolak type phenolic resin curing agent, a mold release agent, a rubber component as a stress reducing agent, etc. are widely used. However, semiconductor devices obtained by transfer molding using such low-stress epoxy resin compositions do not meet the low-stress requirements for the resin-encapsulated semiconductor devices, and do not have sufficient low-stress properties. In addition, in the case of transfer molding using the epoxy resin composition as described above,
Another problem arises in that the flexible force-reducing agent, such as rubber, detaches from the surface of the semiconductor device being molded, causing mold stains. On the other hand, using the same dimethylsiloxane used in the synthesis of component (A) in the present invention, this and a novolac type epoxy resin were mixed with methyl ethyl ketone (M
The technique of reacting in advance to form so-called silicone gel particles in EK) and incorporating them into an epoxy resin composition with a stress-lowering agent is described as an example in the prior invention. (Japanese Unexamined Patent Publication No. 58-21417) However, in the epoxy resin composition blended with silicone gel particles obtained in this way, the silicone gel particles are present in a particulate form independently and in a free state. Therefore, during transfer molding, the silicone gel also comes off and causes mold stains, which is a problem.
この発明は、このような事情に鑑みなされたもので、製
造の際に金型汚れ等を生じることなく、しかも低応力性
に優れていて、信頼性の高い半導体装置の提供をその目
的とする。This invention was made in view of the above circumstances, and its purpose is to provide a highly reliable semiconductor device that does not cause mold contamination during manufacturing, has excellent low stress properties, and is highly reliable. .
上記の目的を達成するため、この発明の半導体装置は、
エポキシ樹脂、フェノールノボラック樹脂および無機質
充填剤を必須成分とするエポキシ樹脂組成物であって、
下記の（Ａ）成分を含有するエポキシ樹脂組成物を用い
て半導体素子が封止されてなるという構成をとる。In order to achieve the above object, the semiconductor device of the present invention includes:
An epoxy resin composition comprising an epoxy resin, a phenol novolac resin, and an inorganic filler as essential components,
The structure is such that a semiconductor element is sealed using an epoxy resin composition containing the following component (A).
（Ａ）エポキシ樹脂中に、末端にアミノプロピル基を有
する分子！！ｔ２０００〜２００００のジメチルシロキ
サン（Ｓｉ含有量２０〜２５重量％）を添加し反応させ
ることにより得られる、上記エポキシ樹脂からなる母相
中に上記ジメチルシロキサンが母相のエポキシ樹脂と化
学結合した状態で分散している反応生成物。(A) A molecule with an aminopropyl group at the end in an epoxy resin! ! The above-mentioned dimethylsiloxane is chemically bonded to the epoxy resin of the parent phase in the parent phase consisting of the above-mentioned epoxy resin, which is obtained by adding and reacting dimethylsiloxane of t2000 to 20,000 (Si content 20 to 25% by weight). Dispersed reaction products.
すなわち、本発明者は、上記先行発明（特開昭５８−２
１４１７号参照）を基礎に一連の研究を重ねた結果、先
行発明で用いたと同様のジメチルシロキサンをノボラッ
ク型エポキシ樹脂等のエポキシ樹脂中に添加配合して反
応させると、上記工゛ポキシ樹脂を母相とし、その母相
中でジメチルシロキサンが１〜１０μ蹟のシリコーンゲ
ル粒子をつくり、かつその生成シリコーンゲル粒子が、
母相となるエポキシ樹脂と化学結合した状態で分散して
いる所謂、海−島構造になることを突き止めた。そして
、このような海−島構造をもつ変性エポキシ樹脂を、エ
ポキシ樹脂組成物に用いるエポキシ樹脂の少なくとも一
部に代えて使用すると、金型汚れの発生が防止されるよ
うになり、しかも低応力性も実現されるようになること
を見いだしこの発明に到達した。That is, the present inventor has disclosed that the above-mentioned prior invention (JP-A-58-2
As a result of a series of studies based on the above (see No. 1417), it was found that when dimethylsiloxane similar to that used in the prior invention is added and blended into an epoxy resin such as a novolak type epoxy resin and reacted, the above-mentioned epoxy resin becomes phase, dimethylsiloxane forms silicone gel particles of 1 to 10 μm in the matrix, and the produced silicone gel particles are
It was discovered that the material forms a so-called sea-island structure in which it is dispersed in a chemically bonded state with the epoxy resin that serves as the matrix. When a modified epoxy resin with such a sea-island structure is used in place of at least a portion of the epoxy resin used in an epoxy resin composition, mold fouling can be prevented and the stress can be reduced. This invention was achieved by discovering that sexual desire can also be realized.
この発明に用いるエポキシ樹脂組成物は、上記変性エポ
キシ樹脂を（Ａ）成分として含有するものである。The epoxy resin composition used in this invention contains the above-mentioned modified epoxy resin as component (A).
上記（Ａ）成分は、例えば、ノボラック型エポキシ樹脂
と、末端にアミノプロピル基を有する分子１２０００〜
２００００のジメチルシロキサン（Ｓｉ含有ｉ２０〜２
５重景％）であって下記の−Ｃ式（１）で表されるもの
とを用いて得られる。The above component (A) is, for example, a novolac type epoxy resin and a molecule having an aminopropyl group at the end of 12,000 to
20000 dimethylsiloxane (Si containing i20~2
5 double view%) and is expressed by the following -C formula (1).
（ｎ＝１５〜１６０］
上記のジメチルシロキサンと反応させるエポキシ樹脂は
、特に限定するものではないが、エポキシ当量１９０〜
２１０のノボラック型エポキシ樹脂、特にタレゾールノ
ボラック型エポキシ樹脂を用いると好結果が得られるよ
うになる。しかし、ビスフェノールノボラック型エポキ
シ樹脂等も使用可能である。である。そして、このよう
なエポキシ樹脂と上記ジメチルシロキサンとを反応させ
るに際し、ノボラック型エポキシ樹脂等のエポキシ樹脂
７５重量部（以下「部」と略す）と上記ジメチルシロキ
サン２５部とを予備反応させることにより、エポキシ樹
脂母相中に粒子径１〜１０μｍのシリコーンゴムの分散
した海−島構造をもつ変性エポキシ樹脂が得られるよう
になる。これについて、より詳しく説明すると、例えば
、１６０〜１８０℃に溶融した０−タレゾールノボラッ
ク型エポキシ樹脂に、上記ジメチルシロキサンを先に述
べた割合で添加し、２〜６時間ディスパー形の分散機等
を用いて分散混合し反応させることにより得ることがで
きる。上記母相となるエポキシ樹脂とジメチルシロキサ
ンの割合は、先に述べた割合に限定されるものではなく
、前者６０〜９０部に対して、後者は４０〜１０部の割
合になる範囲内であれば自由に選択することができる。(n=15 to 160) The epoxy resin to be reacted with the above dimethylsiloxane is not particularly limited, but has an epoxy equivalent of 190 to
210 novolak type epoxy resins, especially Talezol novolac type epoxy resins, have been used with good results. However, bisphenol novolak type epoxy resins and the like can also be used. It is. When reacting such an epoxy resin with the dimethylsiloxane, 75 parts by weight (hereinafter abbreviated as "parts") of an epoxy resin such as a novolac type epoxy resin and 25 parts of the dimethylsiloxane are preliminarily reacted. A modified epoxy resin having a sea-island structure in which silicone rubber having a particle size of 1 to 10 μm is dispersed in the epoxy resin matrix can be obtained. To explain this in more detail, for example, the above-mentioned dimethylsiloxane is added to the 0-talesol novolac type epoxy resin melted at 160 to 180°C in the ratio mentioned above, and the mixture is heated using a disper type dispersion machine for 2 to 6 hours. It can be obtained by dispersion mixing and reaction using. The ratio of the epoxy resin and dimethylsiloxane that form the above matrix is not limited to the ratio mentioned above, but may be within the range of 60 to 90 parts of the former and 40 to 10 parts of the latter. You can choose freely.
特に好適なのは、後者が２５〜１０部の割合である。Particularly preferred is a proportion of 25 to 10 parts of the latter.
以上の範囲内であれば、エポキシ樹脂母相中にシリコー
ンゴムが分散した海−島構造をもつ変性エポキシ樹脂が
得られるようになる。Within the above range, a modified epoxy resin having a sea-island structure in which silicone rubber is dispersed in the epoxy resin matrix can be obtained.
上記のようにして得られた（Ａ）成分の変性エポキシ樹
脂は、エポキシ樹脂組成物に通常用いられる変性されて
いないエポキシ樹脂の全部に代えて用いてもよいし、そ
の一部に代えて用いてもよい。一部に代えて用いるとき
には、その割合を８５〜７０重景％（以下「％」と略す
）程度にすることが好適である。この場合、変性エポキ
シ樹脂と変性されていないエポキシ樹脂とは、相互に同
種であってもよいし異種であってもよい。そして、この
ような変性エポキシ樹脂は、エポキシ樹脂組成物全体中
の１０〜１５％になるように設定することが低応力性等
の観点から好ましい。The modified epoxy resin of component (A) obtained as described above may be used in place of all or part of the unmodified epoxy resin normally used in epoxy resin compositions. You can. When used in place of a portion of the image, it is preferable that the ratio be approximately 85 to 70 percent (hereinafter abbreviated as "%"). In this case, the modified epoxy resin and the unmodified epoxy resin may be of the same kind or different kinds. From the viewpoint of low stress properties, it is preferable to set such modified epoxy resin to 10 to 15% of the total epoxy resin composition.
なお、上記変性エポキシ樹脂と変性されていないエポキ
シ樹脂とを併用する場合において、変性されていないエ
ポキシ樹脂は特に限定するものではないが、エポキシ当
１）９０〜２１０のノボラック型エポキシ樹脂を用いる
ことが好ましい。In addition, when the above-mentioned modified epoxy resin and unmodified epoxy resin are used together, the unmodified epoxy resin is not particularly limited; is preferred.
上記変性エポキシ樹脂、変性されていないエポキシ樹脂
の硬化剤としては、軟化点が７０℃以上のフェノールノ
ボラック樹脂、クレゾールノボラック樹脂が用いられる
。なお、上記フェノール樹脂硬化剤と、上記変性エポキ
シ樹脂を含むエポキシ樹脂全体との配合割合は、エポキ
シ当量／水酸基当量が０．９〜１．２の範囲内になるよ
うに設定することが好適である。この当量比が１に近い
程好結果が得られる。As a curing agent for the above-mentioned modified epoxy resin and unmodified epoxy resin, a phenol novolak resin or a cresol novolac resin having a softening point of 70° C. or higher is used. The blending ratio of the phenolic resin curing agent and the entire epoxy resin including the modified epoxy resin is preferably set so that the epoxy equivalent/hydroxyl equivalent is within the range of 0.9 to 1.2. be. The closer this equivalence ratio is to 1, the better the results.
また、この発明に用いるエポキシ樹脂組成物には、上記
の成分原料以外に無機質充填剤が用いられる。このよう
な無機質充填剤は、粒径１００μｍ以下の球状（長径ａ
、短径す、ｂ／ａ＝Ｑ、５〜１．０）のフィラーを用い
ることが好ましい。使用割合は、樹脂総量に対して重ｆ
ｆｉ基準で２．０〜２．５倍程度になるようにすること
が好ましい。上記の球状フィラーの材質は特に限定する
ものではないが、−Ｃに、球状のシリカ粉末が用いられ
る。このような粒径１００μｍ以下の球状フィラーを用
いることにより、低応力効果が増大すると同時に、無ａ
￥を充填剤に起因する半導体素子のパッシベーション膜
の損傷が防止されるようになる。In addition to the above-mentioned raw materials, an inorganic filler is used in the epoxy resin composition used in the present invention. Such an inorganic filler has a spherical shape (major axis a) with a particle size of 100 μm or less.
, short axis, b/a=Q, 5 to 1.0) is preferably used. The usage ratio is based on the total amount of resin.
It is preferable to set it to about 2.0 to 2.5 times based on fi standard. Although the material of the above-mentioned spherical filler is not particularly limited, spherical silica powder is used for -C. By using such a spherical filler with a particle size of 100 μm or less, the low stress effect is increased and at the same time there is no aeration.
Damage to the passivation film of the semiconductor device caused by the filler can be prevented.
また、この発明に用いるエポキシ樹脂組成物には、任意
成分として有機窒素化合物を用いることができる。この
よう１な有機窒素化合物は、下記の一般式（２）
で表されるものであり、このような有機窒素化合物をエ
ポキシ樹脂組成物全体の０．２１〜０．１６％の割合で
配合すると、これがエポキシ樹脂の硬化触媒としての作
用を発揮するようになり、耐水性の高い封止樹脂が得ら
れるようになる。Moreover, an organic nitrogen compound can be used as an optional component in the epoxy resin composition used in this invention. Such organic nitrogen compounds are represented by the following general formula (2), and when such organic nitrogen compounds are blended at a ratio of 0.21 to 0.16% of the entire epoxy resin composition, This comes to function as a curing catalyst for the epoxy resin, and a sealing resin with high water resistance can be obtained.
なお、この発明に用いるエポキシ樹脂組成物には、離型
剤としての長鎖脂肪酸の金属塩ワックスや着色剤等、通
常エポキシ樹脂組成物に用いられる添加剤が必要に応じ
て配合される。この発明で用いるエポキシ樹脂組成物は
、上記の原料を用い従来公知の方法で製造できるもので
あり、例えば前記原料をトライブレンドまたは溶融混合
のいずれかの方法で均一に分散混合して粉砕し、必要に
応じて打錠するということにより得ることができる。The epoxy resin composition used in the present invention may contain additives normally used in epoxy resin compositions, such as long-chain fatty acid metal salt wax as a mold release agent and a coloring agent, if necessary. The epoxy resin composition used in this invention can be produced by a conventionally known method using the above-mentioned raw materials. For example, the above-mentioned raw materials are uniformly dispersed and mixed by either tri-blending or melt-mixing, and then pulverized. It can be obtained by tabletting as required.
このようにして得られたエポキシ樹脂組成物を用いての
半導体素子の封止は、通常の方法、例えばトランスファ
ー成形等の公知のモールド成形により行うことができ、
それによってこの発明の半導体装置が得られるようにな
る。The semiconductor element can be encapsulated using the epoxy resin composition thus obtained by a conventional method, for example, by known molding such as transfer molding.
Thereby, the semiconductor device of the present invention can be obtained.
このようにしてトランスファー成形等のモールド成形を
行う場合、上記エポキシ樹脂組成物は、ジメチルシロキ
サンが母相のエポキシ樹脂と化学結合した状態になって
いるため脱離せず、したがって、金型汚れが生じない。When molding such as transfer molding is performed in this way, the dimethylsiloxane in the epoxy resin composition is chemically bonded to the epoxy resin as the matrix, so it does not separate, resulting in mold stains. do not have.
以上のように、この発明の半導体装置は、上記のような
樹脂封止に際して、金型汚れを招かず、しかも（Ａ）成
分の変性樹脂の作用によって、封止樹脂が優れた低応力
性を備えており、それによって高い信顧度を有している
。すなわち、この発明によれば、半導体素子として高集
積化、大型化されているものに対しても充分対応でき、
半導体素子のパッシベーション膜に対するクラックやア
ルミ配線等の変形等の発生を防止することができる。As described above, the semiconductor device of the present invention does not cause mold contamination during resin encapsulation as described above, and the encapsulation resin has excellent low stress properties due to the action of the modified resin of component (A). As a result, it has a high degree of trust. That is, according to the present invention, it is possible to sufficiently cope with highly integrated and large-sized semiconductor devices.
It is possible to prevent cracks in the passivation film of the semiconductor element, deformation of aluminum wiring, etc. from occurring.
つぎに、実施例について比較例と併せて詳しく説明する
。Next, examples will be described in detail together with comparative examples.
〔実施例１〜３〕
まず、０−タレゾールノボラックエポキシ樹脂７５部を
１６０〜１８０℃に溶融し、これに分子１）００００程
度の前記一般式（１）で表されるジメチルポリシロキサ
ン（シリカ含有量２０〜２５％）をエポキシ樹脂７５部
に対し、ジメチルポリシロキサン２５部の割合になるよ
うに添加した、その状態で１６０〜１８０℃の温度にお
いて分散機を用い３時間攪拌混合し、反応生成物を冷却
したのち粉砕して変性樹脂をつくった。これを変性樹脂
ａとする。つぎに、この変性樹脂ａと、後記の第１表に
示す原料を同表に示す割合で配合し、８０℃に加熱した
ミキシングロール機に掛けて１０分間混練したのちシー
ト状に形成した。ついで、このシート状体を冷却粉砕し
エポキシ樹月、旨組成物粉末をつくった。[Examples 1 to 3] First, 75 parts of 0-talesol novolac epoxy resin is melted at 160 to 180°C, and dimethylpolysiloxane (silica 20 to 25%) was added to 75 parts of epoxy resin in a ratio of 25 parts of dimethylpolysiloxane, and stirred and mixed using a disperser at a temperature of 160 to 180°C for 3 hours to react. The product was cooled and ground to produce a modified resin. This is referred to as modified resin a. Next, this modified resin a and the raw materials shown in Table 1 below were blended in the proportions shown in the same table, kneaded for 10 minutes on a mixing roll machine heated to 80°C, and then formed into a sheet. Then, this sheet-like material was cooled and ground to produce an epoxy powder composition.
〔比較例１〕
先行発明（特開昭５８−２１４１７号）の実施例と同様
にしてシリコーンゲル粒子をつくり、これをエポキシ樹
脂組成物中に同様の割合で配合し変性樹脂すをつくった
。この変性樹脂すを変性樹脂ａに代えて用いた以外は、
前記実施例と同様にしてエポキシ樹脂組成物粉末をつく
った。[Comparative Example 1] Silicone gel particles were prepared in the same manner as in the example of the prior invention (Japanese Unexamined Patent Publication No. 58-21417), and the particles were blended into an epoxy resin composition in the same ratio to prepare a modified resin. Except that this modified resin A was used in place of modified resin A.
An epoxy resin composition powder was prepared in the same manner as in the previous example.
〔比較例２〕
変性樹脂ａに代えて、フェノールノボラックエポキシ樹
脂を用いた。それ以外は、前記実施例と同様にしてエポ
キシ樹脂組成物粉末をつくった。[Comparative Example 2] A phenol novolac epoxy resin was used in place of modified resin a. Except for the above, an epoxy resin composition powder was prepared in the same manner as in the previous example.
（以下余白）
以上の実施例および比較例で得られたエポキシ樹脂組成
物粉末を用い、っぎのような試験を行い半導体装置の性
能を評価した。(The following is a blank space) Using the epoxy resin composition powders obtained in the above Examples and Comparative Examples, the following tests were conducted to evaluate the performance of semiconductor devices.
（余白）
第一」Ｌ−表
（以下余白）
第一」し−表
パッケージクラック発生率の測定と同様な成形条件で４
２ｐｉｎＤＩＰパツケージをつくり、これを−８０℃と
２００℃の２分サイクルによる熱衝撃性テストを行い、
Ａ１スライド量（アルミ配線のスライド量）を測定した
。搭載したチップサイズは６． ＯＸ ３． ＯＸ Ｏ
，４３ｔであり、ＡＩのスライド量は上記熱衝撃性テス
ト終了後、熱発煙硝酸でパッケージを解体し、電子顕微
鏡を用いてスライド量を測定することによって行った。(Margin) 1st L-table (hereinafter margin) 1st L-table 4 under the same molding conditions as the measurement of package crack occurrence rate
We made a 2-pin DIP package and conducted a thermal shock test using a 2-minute cycle of -80℃ and 200℃.
A1 sliding amount (sliding amount of aluminum wiring) was measured. The installed chip size is 6. OX 3. OXO
, 43 tons, and the sliding amount of AI was determined by disassembling the package with hot fuming nitric acid after the above thermal shock test, and measuring the sliding amount using an electron microscope.
（以下余白）
第一」Ｌ−表
上記第２表〜第５表から明らかなように、上記実施例に
係る成形ｉ料で樹脂封止された半導体装置は、その封止
樹脂が、低熱応力性に優れているため、パッケージクラ
ック、ＡＩスライド量、パッシベーションクラック数が
少なく、しかもトランスファーモールド成形に対して、
金型汚れを生じないことがわかる。(Left space below) 1st L-Table As is clear from the above Tables 2 to 5, the semiconductor device resin-encapsulated with the molding material according to the above example has a low thermal stress due to the encapsulation resin. Because of its excellent properties, there are fewer package cracks, fewer AI slides, and fewer passivation cracks, and moreover, it is suitable for transfer molding.
It can be seen that mold stains do not occur.
Claims (5)
無機質充填剤を必須成分とするエポキシ樹脂組成物であ
つて、下記の（Ａ）成分を含有するエポキシ樹脂組成物
を用いて半導体素子が封止されてなることを特徴とする
半導体装置。 （Ａ）エポキシ樹脂中に、末端にアミノプロピル基を有
する分子量２０００〜２００００のジメチルシロキサン
（Ｓｉ含有量２０〜２５重量％）を添加し反応させるこ
とにより得られる、上記エポキシ樹脂からなる母相中に
上記ジメチルシロキサンが母相のエポキシ樹脂と化学結
合した状態で分散している反応生成物。(1) An epoxy resin composition containing an epoxy resin, a phenol novolac resin, and an inorganic filler as essential components, in which a semiconductor element is encapsulated using an epoxy resin composition containing the following component (A). A semiconductor device characterized by: (A) In a matrix consisting of the above epoxy resin, obtained by adding and reacting dimethylsiloxane with a molecular weight of 2000 to 20000 having an aminopropyl group at the terminal (Si content 20 to 25% by weight) to the epoxy resin. A reaction product in which the above-mentioned dimethylsiloxane is dispersed in a chemically bonded state with the epoxy resin as the parent phase.
５重量部に対して上記末端アミノプロピル基含有ジメチ
ルシロキサン２５重量部の割合で反応させた反応生成物
である特許請求の範囲第１項記載の半導体装置。(2) Component (A) is the above-mentioned novolac type epoxy resin 7
2. The semiconductor device according to claim 1, which is a reaction product obtained by reacting 5 parts by weight of the terminal aminopropyl group-containing dimethylsiloxane in a ratio of 25 parts by weight.
５重量％含有されている特許請求の範囲第１項または第
２項記載の半導体装置。(3) Component (A) is present in the epoxy resin composition at 10 to 1
The semiconductor device according to claim 1 or 2, which contains 5% by weight.
ラーである特許請求の範囲第１項ないし第３項のいずれ
かに記載の半導体装置。(4) The semiconductor device according to any one of claims 1 to 3, wherein the inorganic filler is a spherical filler with a particle size of 100 μm or less.
る特許請求の範囲第１項ないし第４項のいずれかに記載
の半導体装置。(5) The semiconductor device according to any one of claims 1 to 4, which contains an organic nitrogen compound as an optional component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61312461A JP2587043B2 (en) | 1986-12-26 | 1986-12-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61312461A JP2587043B2 (en) | 1986-12-26 | 1986-12-26 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7057735A Division JP2703733B2 (en) | 1995-03-16 | 1995-03-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63164451A true JPS63164451A (en) | 1988-07-07 |
| JP2587043B2 JP2587043B2 (en) | 1997-03-05 |
Family
ID=18029476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61312461A Expired - Lifetime JP2587043B2 (en) | 1986-12-26 | 1986-12-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2587043B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02305860A (en) * | 1989-02-10 | 1990-12-19 | Toray Ind Inc | Thermosetting resin composition, cured product of resin, prepreg, and fiber-reinforced plastics |
| JPH0885718A (en) * | 1995-03-16 | 1996-04-02 | Nitto Denko Corp | Semiconductor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62260817A (en) * | 1986-05-08 | 1987-11-13 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and sealed semiconductor device |
| JPS62280215A (en) * | 1986-05-29 | 1987-12-05 | Shin Etsu Chem Co Ltd | Epoxy resin composition |
| JPS6317928A (en) * | 1986-07-10 | 1988-01-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JPS6317927A (en) * | 1986-07-09 | 1988-01-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
-
1986
- 1986-12-26 JP JP61312461A patent/JP2587043B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62260817A (en) * | 1986-05-08 | 1987-11-13 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and sealed semiconductor device |
| JPS62280215A (en) * | 1986-05-29 | 1987-12-05 | Shin Etsu Chem Co Ltd | Epoxy resin composition |
| JPS6317927A (en) * | 1986-07-09 | 1988-01-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JPS6317928A (en) * | 1986-07-10 | 1988-01-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02305860A (en) * | 1989-02-10 | 1990-12-19 | Toray Ind Inc | Thermosetting resin composition, cured product of resin, prepreg, and fiber-reinforced plastics |
| JPH0885718A (en) * | 1995-03-16 | 1996-04-02 | Nitto Denko Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2587043B2 (en) | 1997-03-05 |
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