JPS63164374A - Semiconductor laser device and manufacture thereof - Google Patents

Semiconductor laser device and manufacture thereof

Info

Publication number
JPS63164374A
JPS63164374A JP30860086A JP30860086A JPS63164374A JP S63164374 A JPS63164374 A JP S63164374A JP 30860086 A JP30860086 A JP 30860086A JP 30860086 A JP30860086 A JP 30860086A JP S63164374 A JPS63164374 A JP S63164374A
Authority
JP
Japan
Prior art keywords
layer
ingaalp
gaas
contact layer
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30860086A
Other versions
JPH0734493B2 (en
Inventor
Masayuki Ishikawa
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP30860086A priority Critical patent/JPH0734493B2/en
Publication of JPS63164374A publication Critical patent/JPS63164374A/en
Publication of JPH0734493B2 publication Critical patent/JPH0734493B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To prepare a semiconductor laser device having high reliability, holding high productivity and reproducibility by forming a current constriction layer consisting of InGaAlP through a contact layer composed of GaAs, InGaP, etc.
CONSTITUTION: An n-GaAs buffer layer 12 is shaped onto an n-GaAs substrate 11. A double hetero-junction structure section made up of an n-InGaAlP clad layer 13, an InGaP active layer 14 and a p-InGaAlP clad layer 15 is formed onto the buffer layer 12. A p-InGaP contact layer 16 and a p-GaAs contact layer 17 are shaped onto the clad layer 15. An InGaAlP current constriction layer 18 in which an opening section is formed to a section as a current path is shaped onto the contact layer 17. A p side electrode 19 is formed onto the current constriction layer 18 and the contact layer 17 exposed in the opening section, and an n side electrode 20 is shaped under the substrate 11. Currents can be constricted excellently by the current constriction layer 18, and a light- emitting region in the active region 14 is specified to a striped shape, thus allowing laser oscillation.
COPYRIGHT: (C)1988,JPO&Japio
JP30860086A 1986-12-26 1986-12-26 Semiconductor laser - The device and method of manufacturing the same Expired - Lifetime JPH0734493B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30860086A JPH0734493B2 (en) 1986-12-26 1986-12-26 Semiconductor laser - The device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30860086A JPH0734493B2 (en) 1986-12-26 1986-12-26 Semiconductor laser - The device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPS63164374A true JPS63164374A (en) 1988-07-07
JPH0734493B2 JPH0734493B2 (en) 1995-04-12

Family

ID=17982988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30860086A Expired - Lifetime JPH0734493B2 (en) 1986-12-26 1986-12-26 Semiconductor laser - The device and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JPH0734493B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0420691A2 (en) * 1989-09-28 1991-04-03 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of fabricating the same
US5235194A (en) * 1989-09-28 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with InGaAlP

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0420691A2 (en) * 1989-09-28 1991-04-03 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of fabricating the same
US5103271A (en) * 1989-09-28 1992-04-07 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method of fabricating the same
US5235194A (en) * 1989-09-28 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with InGaAlP

Also Published As

Publication number Publication date
JPH0734493B2 (en) 1995-04-12

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