JPS6315486A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6315486A
JPS6315486A JP16030086A JP16030086A JPS6315486A JP S6315486 A JPS6315486 A JP S6315486A JP 16030086 A JP16030086 A JP 16030086A JP 16030086 A JP16030086 A JP 16030086A JP S6315486 A JPS6315486 A JP S6315486A
Authority
JP
Japan
Prior art keywords
laser
resonators
laser element
beat
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16030086A
Other languages
Japanese (ja)
Inventor
Morichika Yano
矢野　盛規
Hiroshi Hayashi
寛 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16030086A priority Critical patent/JPS6315486A/en
Publication of JPS6315486A publication Critical patent/JPS6315486A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a semiconductor laser that is easily made and is equipped with sufficiently stabilized oscillation wavelengths by composing a mechanism so that the oscillation wavelengths can be selected according to beat which is produced on the basis of an interference phenomenon of laser beams emitted between resonators consisting of a laser element part and a waveguide. CONSTITUTION:When the first clad layer 12 and an active layer 13 are formed on a substrate 11, recessed parts, corresponding to grooves 9 and 10 formed at the GaAs substrate 11, are formed in the first clad layer 12 on the grooves 9 and 10 and the active layer 13 is formed while it is being pulled in the recessed parts located in the first clad layer 12. Oscillating operations of laser elements 1 and 2 are formed by two kinds of resonators comprising laser element 1-waveguide 7laser element 2 and laser element 1-waveguide 8-laser element 2. Thus, beat is produced by an interference phenomenon of laser beams developed between the resonators having different lengths and wavelength selectivity is obtained by a mechanism of beat and accordingly a semiconductor laser performs the laser oscillating operations having stable selected wavelengths.

Description

【発明の詳細な説明】 （イ）産業上の利用分野 この発明は、通信、品１測、情報処理などの分野に利用
される発振波長の安定化された半導体レーザ装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application This invention relates to a semiconductor laser device with a stabilized oscillation wavelength, which is used in fields such as communications, product inspection, and information processing.

（ロ）従来の技術 光計測をはじめ光通信、光情報処理などの光応用分野に
おいて、半導体レーザの用途が拡大され−るにつれて、
発振波長の安定化が重要な課題となってきている。発振
波長の安定化された半導体し一ザとして従来より分布帰
還型し〜ザや干渉レーザが提案されてきた。(b) Conventional technology As the use of semiconductor lasers expands in optical application fields such as optical measurement, optical communication, and optical information processing,
Stabilizing the oscillation wavelength has become an important issue. Distributed feedback lasers and interference lasers have been proposed as semiconductor lasers with stabilized oscillation wavelengths.

（ハ）発明が解決しようとする問題点 しかしながら、このような従来の半導体レーザにおいて
は、素子構造上製作が困難であることや、発振波長の十
分な安定性が得られにくいという問題点が残されている
。(c) Problems to be solved by the invention However, such conventional semiconductor lasers still have problems such as difficulty in manufacturing due to the element structure and difficulty in obtaining sufficient stability of the oscillation wavelength. has been done.

この発明はこのような事情を考慮してなされたもので、
製作が容易でかつ充分に発振波長が安定化された半導体
レーザ装置を提供するものである。This invention was made in consideration of these circumstances,
It is an object of the present invention to provide a semiconductor laser device that is easy to manufacture and whose oscillation wavelength is sufficiently stabilized.

（ニ）問題点を解決するための手段 この発明は、２つのレーザ素子部とそれらのレーザ素子
部間を結ぶ光路長の異なる複数の導波路とを備えて、前
記レーザ素子部と前記各導波路からなる複数の共振器を
形成し、各共振器間のレーザ光の干渉に基くビートの発
生により発振波長が選択されることを特徴とする半導体
レーザ装置である。(d) Means for Solving the Problems This invention comprises two laser element parts and a plurality of waveguides having different optical path lengths connecting the laser element parts, and the laser element part and each of the waveguides are provided with a plurality of waveguides having different optical path lengths. This semiconductor laser device is characterized in that a plurality of resonators formed of wave paths are formed, and an oscillation wavelength is selected by generating a beat based on interference of laser light between the resonators.

（ホ）作　用 半導体レーザ装置のレーザ素子部と光路長の異なる複数
の導波路からなる各共振器によって発振が形成されると
、異なる光路長の共振器間のレーザ光の干渉により、ビ
ートが生じ、波長選択性が得られる。(E) Operation When oscillation is formed by the laser element part of the semiconductor laser device and each resonator made up of a plurality of waveguides with different optical path lengths, the beat is caused by the interference of the laser light between the resonators with different optical path lengths. wavelength selectivity.

（へ）実施例 以下、図面に示す実施例に基づいてこの発明を詳述する
。なお、これによってこの発明が限定されるものではな
い。(f) Examples Hereinafter, the present invention will be described in detail based on examples shown in the drawings. Note that this invention is not limited to this.

第１図はこの発明の一実施例の半導体レーザ装置の平面
的な配置を示す説明図、第２図は第１図のＡ−Ａ矢視断
面を模式的に示す説明図である。FIG. 1 is an explanatory diagram showing a planar arrangement of a semiconductor laser device according to an embodiment of the present invention, and FIG. 2 is an explanatory diagram schematically showing a cross section taken along the line A--A in FIG.

第１図にＪ５いてレーザ素子１および２が平行に配置さ
れており、それらはそれぞれ２つの導波路７および８で
結合されている。３および４は回折格子によって形成さ
れたハーフミラ−１５および６は回折格子によって形成
された完全ミラー、９゜１０は第２図に示すＧａＡＳＭ
板１１に形成された溝、１６はレーザ素子１の端部に設
けられた反射膜である。At J5 in FIG. 1, laser elements 1 and 2 are arranged in parallel and are coupled by two waveguides 7 and 8, respectively. 3 and 4 are half mirrors formed by diffraction gratings, 15 and 6 are full mirrors formed by diffraction gratings, and 9 and 10 are GaASMs shown in FIG.
The groove 16 formed in the plate 11 is a reflective film provided at the end of the laser element 1.

第２図において、１２はＧａＡＳ基板上に形成されたＱ
ａ　ＡＩ　ＡＳ第１クラッド層、１３はＧａＡｌ’Ａｓ
活性層、１４はＱａ　Ａｔ　Ａｓ第２クラッド層、１５
は電極形成用の（３ａ　Ａｓである。導波路部７．８で
はこの電極形成用のＧａ　Ａｓがホトリソグラフィ法で
除去され、回折格子３および５が第２クラッド層１４に
形成される。In FIG. 2, 12 is a Q formed on a GaAS substrate.
a AI AS first cladding layer, 13 is GaAl'As
active layer, 14 Qa At As second cladding layer, 15
is (3a As) for forming electrodes. In the waveguide section 7.8, this GaAs for forming electrodes is removed by photolithography, and diffraction gratings 3 and 5 are formed on the second cladding layer 14.

ここで、基板１１の上に第１クラッド層１２および活性
層１３が形成される際には、第１クラッド層１２にはＧ
ａＡＳ基板１１に形成された溝９゜１０に対応して、そ
れらの上部に凹部が形成され、活性層１３は、第１クラ
ッド層１２の四部に引込まれ′つつ形成される。従って
、導波路７および８における活性層１３は、レーザ素子
１および２における活性層１３より十分に薄く形成され
、導波路７および８でのレーク“光の吸収損失は無視出
来る程度に減少する。Here, when the first cladding layer 12 and the active layer 13 are formed on the substrate 11, the first cladding layer 12 has G
Recesses are formed above the grooves 9 and 10 formed in the aAS substrate 11, and the active layer 13 is formed while being drawn into the four parts of the first cladding layer 12. Therefore, the active layers 13 in the waveguides 7 and 8 are formed sufficiently thinner than the active layers 13 in the laser elements 1 and 2, and the absorption loss of Rake light in the waveguides 7 and 8 is reduced to a negligible extent.

このような構成において、レーザ素子１，２の発振は、
レーザ索子１−導波路７−レーザ素子２と、レーザ素子
１−導波路８−レーザ素子２の２つの共振器によって形
成されることになる。従つて、異った長さの共振器間の
レーザ光の干渉によりビートが生じ、このビートの作用
で波長選択性が得られる。即ち半導体レーザは安定した
選択波長のレーザ発振を行なうことになる。。なお、こ
のように構成された半導体レーザ装置の発振波長が選択
されかつ安定化するのは、異なる共振器の共振条件を両
者とも満足した波長のみが優先するためである。In such a configuration, the oscillation of the laser elements 1 and 2 is as follows.
It is formed by two resonators: laser cable 1 - waveguide 7 - laser element 2 and laser element 1 - waveguide 8 - laser element 2. Therefore, a beat is generated by the interference of laser light between resonators of different lengths, and wavelength selectivity is obtained by the action of this beat. That is, the semiconductor laser performs stable laser oscillation at the selected wavelength. . The reason why the oscillation wavelength of the semiconductor laser device configured in this manner is selected and stabilized is that only wavelengths that satisfy the resonance conditions of different resonators are prioritized.

この実施例の半導体レーザ装置を発振させると、周囲温
度を室温から５０℃まで変えても発振縦モードの跳びが
なく、発振波長の変化は０．６５人／℃稈度Ｃあり、波
長の安定性にすぐれていることが確認された。When the semiconductor laser device of this example is oscillated, there is no jump in the oscillation longitudinal mode even if the ambient temperature is changed from room temperature to 50°C, the oscillation wavelength changes by 0.65 people/°C, and the wavelength is stable. It was confirmed that it has excellent sex.

（ト）発明の効果 この発明によれば、製作が容易でかつ簡単な構成であり
ながら、発振波長が充分に安定化された半導体レーザ装
置が提供される。(G) Effects of the Invention According to the present invention, a semiconductor laser device is provided which is easy to manufacture and has a simple configuration, and whose oscillation wavelength is sufficiently stabilized.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明の一実施例の平面を示す説明図、第２
図は第１図のＡ−△矢視断面を示す説明図である。 １．２・・・・・・レーザ素子、 ３．４・・・・・・ハーフミラ−回折格子、５．６・・
・・・・完全ミラー回折格子、７．８・・・・・・導波
路、　　　　　　９，１０・・・・・・溝、１１・・・
・・・Ｇａ　ＡＳ基板、 １２・・・・・・Ｇａ　ＡＩ　Ａｓ第１クラッド層、１
３・・・・・・Ｇａ　ＡＩ　Ａｓ活性層、１４・・・・
・・Ｇａ　ＡＩ　Ａｓ第２クラッド層、１５・・・・・
・電極形成用ＧａＡｓ、１６・・・・・・反ｒ１１膜。FIG. 1 is an explanatory diagram showing a plane of an embodiment of the present invention, and FIG.
The figure is an explanatory diagram showing a cross section taken along the line A-△ in FIG. 1. 1.2... Laser element, 3.4... Half mirror diffraction grating, 5.6...
...Full mirror diffraction grating, 7.8...Waveguide, 9,10...Groove, 11...
...Ga AS substrate, 12...Ga AI As first cladding layer, 1
3...Ga AI As active layer, 14...
...Ga AI As second cladding layer, 15...
- GaAs, 16... anti-r11 film for electrode formation.

Claims (1)

【特許請求の範囲】[Claims] １、２つのレーザ素子部とそれらのレーザ素子部間を結
ぶ光路長の異なる複数の導波路とを備えて、前記レーザ
素子部と前記各導波路からなる複数の共振器を形成し、
各共振器間のレーザ光の干渉に基くビートの発生により
発振波長が選択されることを特徴とする半導体レーザ装
置。1, comprising two laser element parts and a plurality of waveguides having different optical path lengths connecting the laser element parts, forming a plurality of resonators made of the laser element part and each of the waveguides;
A semiconductor laser device characterized in that an oscillation wavelength is selected by generating a beat based on interference of laser light between each resonator.
JP16030086A 1986-07-08 1986-07-08 Semiconductor laser Pending JPS6315486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16030086A JPS6315486A (en) 1986-07-08 1986-07-08 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16030086A JPS6315486A (en) 1986-07-08 1986-07-08 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6315486A true JPS6315486A (en) 1988-01-22

Family

ID=15711982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16030086A Pending JPS6315486A (en) 1986-07-08 1986-07-08 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6315486A (en)

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