JPS6315412A - Chemical vapor growth method - Google Patents
Chemical vapor growth methodInfo
- Publication number
- JPS6315412A JPS6315412A JP15923286A JP15923286A JPS6315412A JP S6315412 A JPS6315412 A JP S6315412A JP 15923286 A JP15923286 A JP 15923286A JP 15923286 A JP15923286 A JP 15923286A JP S6315412 A JPS6315412 A JP S6315412A
- Authority
- JP
- Japan
- Prior art keywords
- chemical vapor
- wafer
- high speed
- reaction vessel
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000000126 substance Substances 0.000 title abstract 2
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は薄膜形成方法のひとつである化学気相成長方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a chemical vapor deposition method which is one of thin film forming methods.
化学気相成長方法に於いては原料の種類、加熱方法、炉
の形状等、種々のものが実用化されておシ、ここで述べ
るまでもないが、ＡＭＴ社のキロ’ａ、Ｘ’ａ、、≠７
６’ｌｌ、箋等のものがあった。Various types of chemical vapor deposition methods have been put into practical use, including the types of raw materials, heating methods, and shapes of furnaces. ,,≠7
There were things like 6'll, paper notes, etc.
化学気相成長方法に於ける物質移動論的解析は横型炉に
於いてはＫｖｅｒｓｔｙｎ らが、バレル型炉に関し
ては藤井らが行っているが、形成する膜のガス流方向へ
の均一性を向上させるためにはレイノルズ数を大きくす
る必要がある。すなわち、ガスの流速をあげる、あるい
は成長圧力を下げることが有効である。しかし、量産用
の大型の気相成長装置において、例えば、前述のＡＭＴ
社≠７６０Ｘ等では、ＩＸＸ〜２Ｘ箋Ｓｌ、Ｍの流量が
必要であり、レイノルズ数も数十程度しか確保できない
という問題点を有する。Mass transfer theoretical analysis in chemical vapor deposition methods has been carried out by Kverstyn et al. for horizontal furnaces and by Fujii et al. for barrel furnaces, but it is important to improve the uniformity of the formed film in the gas flow direction. In order to achieve this, it is necessary to increase the Reynolds number. That is, it is effective to increase the gas flow rate or lower the growth pressure. However, in large-scale vapor phase growth equipment for mass production, for example, the above-mentioned AMT
760X, etc., requires a flow rate of IXX to 2X Sl, M, and has the problem that the Reynolds number can only be secured on the order of several dozen.
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは、実効的なガスの流量を増加させ
、レイノルズ数を大きくすることによυ、均一性のよい
化学気相成長方法を提供するところにある。Therefore, the present invention is intended to solve these problems, and its purpose is to increase the effective gas flow rate and increase the Reynolds number to achieve chemical vapor deposition with good uniformity. It's about providing a method.
本発明の化学気相成長方法は、ウエノ・−及びサセプタ
を高速に移動することによシ、実効的なガスの流速を大
きくして層流を作り、レイノルズ数を大きくすることを
特徴とする。The chemical vapor deposition method of the present invention is characterized in that the effective gas flow rate is increased to create a laminar flow and the Reynolds number is increased by moving the Ueno gas and the susceptor at high speed. .
第１図は、本発明の実施例における反応容器の断面模式
図であって、１は赤外加熱ランプ、２はウェハである。FIG. 1 is a schematic cross-sectional view of a reaction vessel in an example of the present invention, where 1 is an infrared heating lamp and 2 is a wafer.
３はサセプタであり、高速回転でのウェハ保持が可能な
形状となっている。４は原料ガス導入口かつ、回転軸で
あり、高速回転が可能である。もちろん、原料ガス導入
口を別に設けることは可能である。５はガス排気口、６
は反応容器である。化学気相成長方法では、流速として
、５〜５＼（、／−）程度がよく用いられるが、本発明
の実施例で、６ Ｘ（ａｎφ）程度の反応容器であれば
、ガス流量がＩ Ｘ Ｓ Ｌ Ｍと小さくても、２＼〜
２ＸＸ（ｒｐｍ ）程の回転を与えれば、実効的な流速
を犬きくすることができる。3 is a susceptor, which has a shape capable of holding a wafer at high speed rotation. 4 is a raw material gas inlet and a rotating shaft, which is capable of high-speed rotation. Of course, it is possible to provide a separate source gas inlet. 5 is a gas exhaust port, 6
is the reaction vessel. In the chemical vapor deposition method, a flow rate of about 5 to 5\(,/-) is often used, but in the embodiment of the present invention, if the reaction vessel is about 6X (anφ), the gas flow rate is I Even if it is small as X S L M, 2\~
By applying a rotation of about 2XX (rpm), the effective flow velocity can be increased.
第２図も本発明の実施例であるが、サセプタを多層構造
として、処理速度の増大を図ったものである。第１図の
サセプタを積層したものであり、基本的には同じである
が、加熱方法は高周波透導加熱、あるいは抵抗加熱であ
る。１〜６は第１図と同じ、７は加熱用コイルあるいは
ヒーターである。FIG. 2 also shows an embodiment of the present invention, in which the susceptor has a multilayer structure to increase the processing speed. It is a stack of the susceptors shown in FIG. 1, and is basically the same, but the heating method is high frequency transmission heating or resistance heating. 1 to 6 are the same as in FIG. 1, and 7 is a heating coil or heater.
以上述べたように本発明によれば、ウエノ・−を移動さ
せない場合に比べて、１Ｘ倍から１００倍のレイノルズ
数を容易に得ることが可能である。As described above, according to the present invention, it is possible to easily obtain a Reynolds number that is 1X to 100 times that of the case where the Ueno-- is not moved.
特に、量産用装置でガスの流速を現状よりも増大するこ
とは、不可能であったが、不発明では、従来以下のガス
の流量で、従来以上の実効的ガス流速を得ることができ
る。さらに、通常１”ｌｌ＼ＳＬＭ以上のキャリアガス
を用いていた装置では、ガスの流量を大幅に小さくする
ことが可能で、コスト的にも、安全上の点からも大きな
効果がちる。In particular, it has been impossible to increase the gas flow rate higher than the current level with a mass-production device, but with the present invention, an effective gas flow rate higher than the conventional one can be obtained with a gas flow rate lower than the conventional one. Furthermore, in an apparatus that normally uses a carrier gas of 1"ll\SLM or more, it is possible to significantly reduce the gas flow rate, which has great effects in terms of cost and safety.
第１図は本発明の化学気相成長方法を用いた反応容器の
断面模式図。
第２図は、処理枚数を向上した本発明の化学気相成長方
法を用いた反応容器の断面模式図。
１・・・赤外線加熱ランプ
２・・・ウェハー
５・・・サセプタ
４・・・原料ガス導入口、兼、回転軸
５・・・ガス排気口
６・・・反応容器
７・・・加熱用コイル
以 上
出願人 セイコーエプソン株式会社
ら十FIG. 1 is a schematic cross-sectional view of a reaction vessel using the chemical vapor deposition method of the present invention. FIG. 2 is a schematic cross-sectional view of a reaction vessel using the chemical vapor deposition method of the present invention that increases the number of substrates processed. 1... Infrared heating lamp 2... Wafer 5... Susceptor 4... Raw material gas inlet, rotating shaft 5... Gas exhaust port 6... Reaction vessel 7... Heating coil Applicants: Seiko Epson Corporation et al.
Claims (1)
導体素子製造工程に於いて、ウェハーを高速に移動する
ことにより、原料及びキャリアガスに対してウェハー表
面に数十程度のレイノルズ数を有する層流を作ることを
特徴とする化学気相成長方法。In the semiconductor device manufacturing process of growing semiconductors, insulators, or metal thin films, by moving the wafer at high speed, a laminar flow with a Reynolds number of about several dozen is created on the wafer surface for raw materials and carrier gas. A chemical vapor deposition method characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15923286A JPS6315412A (en) | 1986-07-07 | 1986-07-07 | Chemical vapor growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15923286A JPS6315412A (en) | 1986-07-07 | 1986-07-07 | Chemical vapor growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6315412A true JPS6315412A (en) | 1988-01-22 |
Family
ID=15689226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15923286A Pending JPS6315412A (en) | 1986-07-07 | 1986-07-07 | Chemical vapor growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6315412A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102576669A (en) * | 2009-07-16 | 2012-07-11 | 圆益Ips股份有限公司 | Apparatus for manufacturing semiconductors |
| CN103184434A (en) * | 2011-12-31 | 2013-07-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray apparatus, tray and semiconductor processing apparatus |
-
1986
- 1986-07-07 JP JP15923286A patent/JPS6315412A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102576669A (en) * | 2009-07-16 | 2012-07-11 | 圆益Ips股份有限公司 | Apparatus for manufacturing semiconductors |
| JP2012533876A (en) * | 2009-07-16 | 2012-12-27 | ウォニク アイピーエス カンパニ リミテッド | Semiconductor manufacturing equipment |
| CN103184434A (en) * | 2011-12-31 | 2013-07-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray apparatus, tray and semiconductor processing apparatus |
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