JPS63149554U - - Google Patents
Info
- Publication number
- JPS63149554U JPS63149554U JP4283687U JP4283687U JPS63149554U JP S63149554 U JPS63149554 U JP S63149554U JP 4283687 U JP4283687 U JP 4283687U JP 4283687 U JP4283687 U JP 4283687U JP S63149554 U JPS63149554 U JP S63149554U
- Authority
- JP
- Japan
- Prior art keywords
- recess
- pressure sensor
- semiconductor
- semiconductor substrate
- semiconductor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 238000005488 sandblasting Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例の構成説明図、第２
図は第１図の動作説明図、第３図は第２図の部品
説明図、第４図は第１図の動作説明図、第５図は
本考案の他の実施例の構成説明図、第６図は本考
案の別の実施例の構成説明図である。
１……半導体基板、２……凹部、３……ダイア
フラム、Ａ……マスク、Ｂ……穴、Ｃ……サンド
ブラストノズル、Ｄ……テープ、Ｅ……サンドブ
ラストノズル、Ｆ……テーブル。
Figure 1 is an explanatory diagram of the configuration of one embodiment of the present invention;
3 is an explanatory diagram of the operation of FIG. 1, FIG. 3 is an explanatory diagram of the parts of FIG. 2, FIG. 4 is an explanatory diagram of the operation of FIG. 1, and FIG. 5 is an explanatory diagram of the configuration of another embodiment of the present invention. FIG. 6 is a diagram illustrating the configuration of another embodiment of the present invention. 1... Semiconductor substrate, 2... Recess, 3... Diaphragm, A... Mask, B... Hole, C... Sandblasting nozzle, D... Tape, E... Sandblasting nozzle, F... Table.
Claims (1)
と、該凹部によつて形成され入力圧を受圧するダ
イアフラムとを具備する半導体圧力センサにおい
て、 前記凹部が前記半導体基板の凹部位置に対応し
て穴があけられたマスクを介したサンドブラスト
加工により形成されたことを特徴とする半導体圧
力センサ。[Claims for Utility Model Registration] A semiconductor pressure sensor comprising a semiconductor substrate, a recess formed in the semiconductor substrate, and a diaphragm formed by the recess and receiving input pressure, wherein the recess is connected to the semiconductor substrate. 1. A semiconductor pressure sensor, characterized in that it is formed by sandblasting through a mask with holes drilled corresponding to the recess positions of the semiconductor pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4283687U JPS63149554U (en) | 1987-03-24 | 1987-03-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4283687U JPS63149554U (en) | 1987-03-24 | 1987-03-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63149554U true JPS63149554U (en) | 1988-10-03 |
Family
ID=30859133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4283687U Pending JPS63149554U (en) | 1987-03-24 | 1987-03-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63149554U (en) |
-
1987
- 1987-03-24 JP JP4283687U patent/JPS63149554U/ja active Pending
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