JPS6314876A - 非晶質薄膜形成装置 - Google Patents

非晶質薄膜形成装置

Info

Publication number
JPS6314876A
JPS6314876A JP61160127A JP16012786A JPS6314876A JP S6314876 A JPS6314876 A JP S6314876A JP 61160127 A JP61160127 A JP 61160127A JP 16012786 A JP16012786 A JP 16012786A JP S6314876 A JPS6314876 A JP S6314876A
Authority
JP
Japan
Prior art keywords
substrate
electrodes
magnetic field
electrode plates
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61160127A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0576549B2 (enrdf_load_stackoverflow
Inventor
Masayoshi Murata
正義 村田
Takashi Yamamoto
山本 鷹司
Yoshio Ieyumi
家弓 喜雄
Hiroshi Fujiyama
寛 藤山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP61160127A priority Critical patent/JPS6314876A/ja
Priority to DE3750349T priority patent/DE3750349T2/de
Priority to EP87106535A priority patent/EP0244842B1/en
Priority to CA000536654A priority patent/CA1279411C/en
Priority to KR1019870004508A priority patent/KR910002819B1/ko
Priority to US07/047,328 priority patent/US4901669A/en
Publication of JPS6314876A publication Critical patent/JPS6314876A/ja
Priority to KR1019900021941A priority patent/KR910010168B1/ko
Publication of JPH0576549B2 publication Critical patent/JPH0576549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP61160127A 1986-05-09 1986-07-08 非晶質薄膜形成装置 Granted JPS6314876A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP61160127A JPS6314876A (ja) 1986-07-08 1986-07-08 非晶質薄膜形成装置
DE3750349T DE3750349T2 (de) 1986-05-09 1987-05-06 Anordnung zur Herstellung von Dünnschichten.
EP87106535A EP0244842B1 (en) 1986-05-09 1987-05-06 Apparatus for forming thin film
CA000536654A CA1279411C (en) 1986-05-09 1987-05-08 Method and apparatus for forming thin film
KR1019870004508A KR910002819B1 (ko) 1986-05-09 1987-05-08 비정질박막의 형성방법 및 장치
US07/047,328 US4901669A (en) 1986-05-09 1987-05-08 Method and apparatus for forming thin film
KR1019900021941A KR910010168B1 (ko) 1986-05-09 1990-12-27 비정질박막 형성장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61160127A JPS6314876A (ja) 1986-07-08 1986-07-08 非晶質薄膜形成装置

Publications (2)

Publication Number Publication Date
JPS6314876A true JPS6314876A (ja) 1988-01-22
JPH0576549B2 JPH0576549B2 (enrdf_load_stackoverflow) 1993-10-22

Family

ID=15708451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61160127A Granted JPS6314876A (ja) 1986-05-09 1986-07-08 非晶質薄膜形成装置

Country Status (1)

Country Link
JP (1) JPS6314876A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01215025A (ja) * 1988-02-24 1989-08-29 Tel Sagami Ltd プラズマcvd装置
WO1996027690A1 (fr) * 1995-03-07 1996-09-12 Essilor International Procede et appareil pour le depot assiste par plasma sur un substrat a deux faces

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01215025A (ja) * 1988-02-24 1989-08-29 Tel Sagami Ltd プラズマcvd装置
WO1996027690A1 (fr) * 1995-03-07 1996-09-12 Essilor International Procede et appareil pour le depot assiste par plasma sur un substrat a deux faces
FR2731370A1 (fr) * 1995-03-07 1996-09-13 Cie Generale D Optique Essilor Procede pour le depot assiste par plasma d'au moins une couche mince sur un substrat a deux faces, et reacteur correspondant

Also Published As

Publication number Publication date
JPH0576549B2 (enrdf_load_stackoverflow) 1993-10-22

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees