JPS6314876A - 非晶質薄膜形成装置 - Google Patents
非晶質薄膜形成装置Info
- Publication number
- JPS6314876A JPS6314876A JP61160127A JP16012786A JPS6314876A JP S6314876 A JPS6314876 A JP S6314876A JP 61160127 A JP61160127 A JP 61160127A JP 16012786 A JP16012786 A JP 16012786A JP S6314876 A JPS6314876 A JP S6314876A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrodes
- magnetic field
- electrode plates
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000005684 electric field Effects 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 13
- 239000012495 reaction gas Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 abstract description 15
- 230000007935 neutral effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 241000255925 Diptera Species 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- -1 argon ions Chemical class 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000252233 Cyprinus carpio Species 0.000 description 1
- 241001136824 Pyrgotidae Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61160127A JPS6314876A (ja) | 1986-07-08 | 1986-07-08 | 非晶質薄膜形成装置 |
DE3750349T DE3750349T2 (de) | 1986-05-09 | 1987-05-06 | Anordnung zur Herstellung von Dünnschichten. |
EP87106535A EP0244842B1 (en) | 1986-05-09 | 1987-05-06 | Apparatus for forming thin film |
CA000536654A CA1279411C (en) | 1986-05-09 | 1987-05-08 | Method and apparatus for forming thin film |
KR1019870004508A KR910002819B1 (ko) | 1986-05-09 | 1987-05-08 | 비정질박막의 형성방법 및 장치 |
US07/047,328 US4901669A (en) | 1986-05-09 | 1987-05-08 | Method and apparatus for forming thin film |
KR1019900021941A KR910010168B1 (ko) | 1986-05-09 | 1990-12-27 | 비정질박막 형성장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61160127A JPS6314876A (ja) | 1986-07-08 | 1986-07-08 | 非晶質薄膜形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6314876A true JPS6314876A (ja) | 1988-01-22 |
JPH0576549B2 JPH0576549B2 (enrdf_load_stackoverflow) | 1993-10-22 |
Family
ID=15708451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61160127A Granted JPS6314876A (ja) | 1986-05-09 | 1986-07-08 | 非晶質薄膜形成装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6314876A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01215025A (ja) * | 1988-02-24 | 1989-08-29 | Tel Sagami Ltd | プラズマcvd装置 |
WO1996027690A1 (fr) * | 1995-03-07 | 1996-09-12 | Essilor International | Procede et appareil pour le depot assiste par plasma sur un substrat a deux faces |
-
1986
- 1986-07-08 JP JP61160127A patent/JPS6314876A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01215025A (ja) * | 1988-02-24 | 1989-08-29 | Tel Sagami Ltd | プラズマcvd装置 |
WO1996027690A1 (fr) * | 1995-03-07 | 1996-09-12 | Essilor International | Procede et appareil pour le depot assiste par plasma sur un substrat a deux faces |
FR2731370A1 (fr) * | 1995-03-07 | 1996-09-13 | Cie Generale D Optique Essilor | Procede pour le depot assiste par plasma d'au moins une couche mince sur un substrat a deux faces, et reacteur correspondant |
Also Published As
Publication number | Publication date |
---|---|
JPH0576549B2 (enrdf_load_stackoverflow) | 1993-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |