JPS63147311A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS63147311A
JPS63147311A JP29514786A JP29514786A JPS63147311A JP S63147311 A JPS63147311 A JP S63147311A JP 29514786 A JP29514786 A JP 29514786A JP 29514786 A JP29514786 A JP 29514786A JP S63147311 A JPS63147311 A JP S63147311A
Authority
JP
Japan
Prior art keywords
semiconductor device
circuit
input
circuit part
circuit section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29514786A
Other languages
Japanese (ja)
Inventor
Ikuo Kurihara
郁夫 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP29514786A priority Critical patent/JPS63147311A/en
Publication of JPS63147311A publication Critical patent/JPS63147311A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To obtain a semiconductor device where each component device can be specified easily and surely by means of an existing inspection apparatus by installing a discriminating circuit part which has an electric characteristic in compliance with the discriminating information at a circuit part for a genuine device. CONSTITUTION:A circuit part, for a genuine device, which generates a prescribed output signal corresponding to an input signal and a discriminating circuit part which has an electric characteristic in compliance with the discriminating information at the circuit part for the genuine device are installed. For example, an internal device 6 at an input-protective circuit for a MOS semiconductor device or the like generates a prescribed output signal, from an output pad, which corresponds to a prescribed input signal coming from an input pad 1. To test a semiconductor device, a forward current is made to flow through protective diodes 3-5 and their forward voltage is measured. In addition, when an electric current is made to flow in such a way that the input pad 1 shows a voltage which is lower than a ground level, the forward voltage causes a difference whose value corresponds to the difference caused by adding the diode 5. If this voltage is measured, it is possible to discriminate which circuit it is from the outside.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は半導体装置、特にシリコンウエノ1等の基板上
に形成される半導体集積回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to a semiconductor device, and particularly to a semiconductor integrated circuit formed on a substrate such as silicon wafer 1.

〔従来技術〕[Prior art]

半導体装置は通常半導体基板、即ちウェハ上に多数個同
時に製造される。この製造の仕様として同一種類の半導
体装置を同一基板上に製造する場合と、異なる2種以上
の半導体装置を同一基板上に製造する場合とがある。半
導体装置の製造工程においてはシリコン基板を一つの単
位として一括して処理、検査等を行なう為、特に半導体
装置の動作試験において、後者の場合それぞれ異なる半
導体装置を区別して扱うことが必要となる。
A large number of semiconductor devices are usually manufactured simultaneously on a semiconductor substrate, that is, a wafer. The manufacturing specifications include cases in which the same type of semiconductor devices are manufactured on the same substrate, and cases in which two or more different types of semiconductor devices are manufactured on the same substrate. In the manufacturing process of semiconductor devices, silicon substrates are treated and inspected as one unit, so in the latter case, it is necessary to treat different semiconductor devices separately, especially in operation tests of semiconductor devices.

同一基板上に混在して製造された半導体装置を識別する
ために従来取られた方法m≠ミか上の各半導体装置の位
置を紙などに記録しておき、これを参照して識別する方
法、あるいは作業者の目視により識別する方法などがあ
った。これらの方法は繁雑であり目視による識別では大
量の処理は不可能である。
A conventional method used to identify semiconductor devices that are mixedly manufactured on the same substrate: record the position of each semiconductor device on paper, etc., and refer to this for identification. Alternatively, there was a method of identification by visual inspection by the worker. These methods are complicated and cannot be used to process large amounts of data by visual identification.

さらに、半導体基板より個々の半導体装置に切断分離し
て特定のパッケージに組立てた後については前述の手段
では識別できない。
Furthermore, after the semiconductor substrate has been cut and separated into individual semiconductor devices and assembled into a specific package, it cannot be identified by the above-mentioned means.

可能となる。この場合においてもその装置が動作不良を
示した場合には全く不可能となり、半導体装置の製造工
程の管理上重要な情報である歩留りの計数が不可能とな
る。
It becomes possible. Even in this case, if the device exhibits a malfunction, it becomes completely impossible to count the yield, which is important information for managing the manufacturing process of semiconductor devices.

又、別の検査方法として半導体基板より分離切断する以
前の半導体基板の状態においては表面の形状を容易に観
察できるため、画像入力装置と判別装置を使用して表面
の形状検知により自動判別が可能であるが、パッケージ
に組み入れた後はX線装置等により透視して判定する必
要があり一段と困難となる。
In addition, as another inspection method, since the surface shape of the semiconductor substrate can be easily observed before it is separated and cut from the semiconductor substrate, automatic discrimination is possible by detecting the surface shape using an image input device and a discrimination device. However, after it is assembled into a package, it is necessary to see through it using an X-ray device or the like to make a determination, which makes it even more difficult.

〔発明の目的〕[Purpose of the invention]

本発明は上述従来例の困難さを解決して、既存の検査装
置を用いて容易かつ確実な各装置の特定ができる半導体
装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to solve the difficulties of the above-mentioned conventional example and to provide a semiconductor device in which each device can be easily and reliably identified using existing inspection equipment.

〔実施例〕〔Example〕

以下、本発明の実施例を第1〜4図を用いて説明する。 Embodiments of the present invention will be described below with reference to FIGS. 1 to 4.

第1図及び第2図は半導体装置の入力端子部について部
分的に回路を示したものである。
FIGS. 1 and 2 partially show a circuit of an input terminal portion of a semiconductor device.

1は入力パッド、2は入力保護回路、3. 4.5は入
力保護ダイオード、6は内部素子である。内部素子は入
力バッドlからの所定入力信号に対し、所定の出力信号
を不図示の出力パッドより発生するためのものである。
1 is an input pad, 2 is an input protection circuit, 3. 4.5 is an input protection diode, and 6 is an internal element. The internal elements are for generating a predetermined output signal from an output pad (not shown) in response to a predetermined input signal from the input pad l.

第2図に示された半導体装置は実使用時において第1図
のものと同様の働きをする。
The semiconductor device shown in FIG. 2 functions similarly to the one shown in FIG. 1 during actual use.

第2図に示す回路はMO3型半導体装置等の入力保護回
路として用いる回路であり、装置の運搬。
The circuit shown in FIG. 2 is a circuit used as an input protection circuit for MO3 type semiconductor devices, etc., and is used for transportation of the device.

組立作業中に人体や機械から与えられるサージ電圧が内
部素子に加わらないようにして半導体装置の内部素子の
破壊を防止している。
This prevents damage to the internal elements of the semiconductor device by preventing surge voltages applied from the human body or machinery from being applied to the internal elements during assembly work.

第1図の回路は第2図の回路と比較してGND側のダイ
オードを1測置列に追加したものである。
The circuit shown in FIG. 1 is different from the circuit shown in FIG. 2 in that a diode on the GND side is added to one measurement column.

入力保護の機能については、このダイオード4の追加は
内部素子に実害を与えるような大きな電圧については同
じ様に内部素子に伝わらないのでほとんど影響を与えな
い。又、実使用においても、このダイオード3.4.5
は入力電圧に対しては不導体として働くだけなので、ダ
イオード5の有無はほとんど関係ない。
Regarding the input protection function, the addition of the diode 4 has almost no effect because large voltages that would cause actual damage to the internal elements are not transmitted to the internal elements in the same way. Also, in actual use, this diode 3.4.5
Since it only acts as a non-conductor with respect to the input voltage, the presence or absence of the diode 5 is almost irrelevant.

半導体装置の試験を行う場合にはICテスタ等を用い、
入力パッドから試験のための信号の入力を行う。具体的
には入力保護回路の保護ダイオードに順方向電流を流し
、その順方向電圧を測定する。
When testing semiconductor devices, use an IC tester etc.
Input signals for testing from the input pad. Specifically, a forward current is caused to flow through the protection diode of the input protection circuit, and its forward voltage is measured.

第1図と第2図の回路では、入力パッドを接地(GND
)レベルより低い電位となるよう電流を流した場合ダイ
オード5を1個追加した分の順方向電圧差が生じる。こ
の電圧を測定することで外部より第1図の回路であるか
第2図の回路であるか判別が可能となきる。あらかじめ
各々の半導体装置に対して、この組合せを決定して製造
しておくことで、まだカッティングされず基板上に並ん
だ状態°においても、各半導体装置が基板より切り離さ
れてパッケージ内へ組込まれた後であっても、各端子の
電気的測定を行って、それぞれの端子の電圧値の組み合
わせを検出することにより、あらかじめ決められている
組合せと比較して容易に半導体装置の判定ができる。試
験は、入力パッドlをGNDレベルより所定量低い電位
にして、その時に流れる電流値の差によって回路の判別
を行うようにしてもよい。
In the circuits of Figures 1 and 2, the input pad is connected to ground (GND).
) When a current is caused to flow so that the potential is lower than the level, a forward voltage difference corresponding to the addition of one diode 5 occurs. By measuring this voltage, it becomes possible to determine from the outside whether the circuit is the one shown in FIG. 1 or the circuit shown in FIG. By determining and manufacturing this combination for each semiconductor device in advance, each semiconductor device can be separated from the substrate and assembled into a package even if it is not cut yet and is lined up on the substrate. By performing electrical measurements on each terminal and detecting a combination of voltage values at each terminal even after the test has been completed, it is possible to easily determine the semiconductor device by comparing it with a predetermined combination. In the test, the input pad 1 may be set at a potential lower than the GND level by a predetermined amount, and the circuit may be determined based on the difference in the current value flowing at that time.

第4図は本発明の他の実施例で、これはダイオード5を
入力パッドに対し高電位側電源、電圧端子(VDD)の
側に設けである。
FIG. 4 shows another embodiment of the present invention, in which a diode 5 is provided on the side of the high potential power supply, voltage terminal (VDD), with respect to the input pad.

第4図の回路においては判別のための入力電流を入力パ
ッドの電位が電源電位より高(なるように流すと、その
時の電圧は第2図の回路に比べてダイオード1個分だけ
に当る電圧差が出る。これにより第2図の回路と第4図
との回路を区別できる。
In the circuit of Figure 4, if the input current for discrimination is passed so that the potential of the input pad is higher than the power supply potential, the voltage at that time will be the voltage equivalent to only one diode compared to the circuit of Figure 2. This makes it possible to distinguish between the circuit of FIG. 2 and the circuit of FIG. 4.

入力パッドの電位を電源電位より所定量高くして、この
時流れる電流値の差によって判別するようにしてもよい
The potential of the input pad may be set higher than the power supply potential by a predetermined amount, and the determination may be made based on the difference in the current value flowing at this time.

〔効 果〕〔effect〕

以上説明したように、半導体装置に以上のような識別用
付加回路を設けることにより、多品種の半導体装置を製
造販売等の目的で管理を行う場合に自動的な取り扱いを
容易にかつ安価に実施することが可能となる。又、本体
回路の良、不良にかかわらず識別用付加回路を別に設け
ているので、こちらを用いて識別可能で、不良率の計算
にも効果的である。
As explained above, by providing a semiconductor device with the above-described additional circuit for identification, automatic handling can be easily and inexpensively performed when managing a wide variety of semiconductor devices for purposes such as manufacturing and sales. It becomes possible to do so. In addition, since an additional circuit for identification is separately provided regardless of whether the main body circuit is good or defective, it can be identified using this, and it is also effective in calculating the defective rate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はダイオードを1ケ付加した入力回路間第2図は
通常の入力回路図
Figure 1 shows an input circuit with one diode added. Figure 2 shows a normal input circuit.

Claims (3)

【特許請求の範囲】[Claims] (1)入力信号に対し所定の出力信号を発生する為の実
素子回路部と、前記実素子回路部の識別情報に対応した
電気的特性を持つ識別用回路部とを有する事を特徴とす
る半導体装置。
(1) It is characterized by having a real element circuit section for generating a predetermined output signal in response to an input signal, and an identification circuit section having electrical characteristics corresponding to identification information of the real element circuit section. Semiconductor equipment.
(2)前記識別用回路部は、前記実素子回路部に電流が
流れないような電位状態の時に電流が流れる事を特徴と
する特許請求の範囲第1項記載の半導体装置。
(2) The semiconductor device according to claim 1, wherein a current flows through the identification circuit section when the potential state is such that no current flows through the actual element circuit section.
(3)前記識別用回路部は、前記実素子回路部に所定範
囲外の電圧が印加されるのを防ぐ為の保護回路部を有す
る事を特徴とする特許請求の範囲第1項記載の半導体装
置。
(3) The semiconductor device according to claim 1, wherein the identification circuit section has a protection circuit section for preventing a voltage outside a predetermined range from being applied to the actual element circuit section. Device.
JP29514786A 1986-12-11 1986-12-11 Semiconductor device Pending JPS63147311A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29514786A JPS63147311A (en) 1986-12-11 1986-12-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29514786A JPS63147311A (en) 1986-12-11 1986-12-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS63147311A true JPS63147311A (en) 1988-06-20

Family

ID=17816877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29514786A Pending JPS63147311A (en) 1986-12-11 1986-12-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS63147311A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011077073A (en) * 2009-09-29 2011-04-14 Shinko Electric Ind Co Ltd Stacked semiconductor device and method of connection test in the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011077073A (en) * 2009-09-29 2011-04-14 Shinko Electric Ind Co Ltd Stacked semiconductor device and method of connection test in the same

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