JPS63145767A - Sensor for monitoring vapor deposition - Google Patents

Sensor for monitoring vapor deposition

Info

Publication number
JPS63145767A
JPS63145767A JP29221286A JP29221286A JPS63145767A JP S63145767 A JPS63145767 A JP S63145767A JP 29221286 A JP29221286 A JP 29221286A JP 29221286 A JP29221286 A JP 29221286A JP S63145767 A JPS63145767 A JP S63145767A
Authority
JP
Japan
Prior art keywords
electron beam
filament
light
monitoring
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29221286A
Other languages
Japanese (ja)
Other versions
JPH0248625B2 (en
Inventor
Sumio Sakai
酒井 純朗
Shunichi Murakami
俊一 村上
Akira Nadaguchi
灘口 明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP29221286A priority Critical patent/JPH0248625B2/en
Publication of JPS63145767A publication Critical patent/JPS63145767A/en
Publication of JPH0248625B2 publication Critical patent/JPH0248625B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To prevent degradation in monitoring accuracy by the light of a filament for generating an electron beam, by providing a magnetic field to the passage of the electron beam at the time of monitoring the light emitted by the electron beam of the flow of a material to be evaporated for vapor deposition in a vacuum deposition device. CONSTITUTION:This monitoring sensor 10 for vacuum deposition monitors a vapor deposition speed by casting the electron beam (e) generated from the filament 25 to the metal vapor flow 20 in the vacuum deposition device, taking the emitted light specific to said vapor out of a hole 22 and converting the same to an electric signal by a photodetector. The magnetic field B orthogonal with the electric field between the filament 25 which is the cathode of such sensor and an anode 27 for accelerating the electron beam (e) is formed of a magnet 3 to curve the route of the electron beam (e). viewing of the light from the filament 25 from a place where the electron beam (e) bombards the material to be evaporated and generates the emitted light is thereby prohibited and the accuracy of the above-mentioned photodetection signal by the light of the filament is improved.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は、電子衝撃されて励起された蒸発物が発生す
る電子衝撃光を、雑音に煩わされることなく検出するよ
うにした、真空蒸着のモニタリング用センサーに関する
Detailed Description of the Invention (Industrial Application Field) This invention is a vacuum evaporation method that detects electron impact light generated by evaporated matter excited by electron impact without being bothered by noise. Regarding monitoring sensors.

(従来の技術) 蒸発物を電子衝撃して励起し、この励起した蒸発物が準
安定状態に戻る際に生ずる電子衝撃光の強度を検出して
蒸発速度を測定する装置として、例えば第2図(米国特
許第4,036,167号)に示すようなものがある。
(Prior art) An example of an apparatus for measuring the evaporation rate by exciting the evaporated material by bombarding it with electrons and detecting the intensity of the electron impact light generated when the excited evaporated material returns to a metastable state is shown in FIG. (U.S. Pat. No. 4,036,167).

この第2図に示すEIE  S  (Electron
  Impact  Emission  5pect
roscopy)センサー10は、直方体の形状を示し
、底板12、これに対応する上板(内部を見せるために
取り外しである)、2個の対向する側板14,15(1
5は内部を見せるために一部を残して大部分が取り外さ
れている)によって囲まれている。底板12と上板には
、モニターしようとする蒸発物の一部Mを通過させるた
めの蒸気流路20.が設けられている。
The EIE S (Electron
Impact Emission 5pect
The sensor 10 exhibits the shape of a rectangular parallelepiped, and includes a bottom plate 12, a corresponding top plate (removed to show the inside), and two opposing side plates 14, 15 (1
5, most of which have been removed to reveal the interior). The bottom plate 12 and the top plate are provided with a vapor flow path 20 for passing a portion M of the evaporated matter to be monitored. is provided.

側板15には、蒸気流路20を通過した蒸気流Mに対し
て直角方向の光路を提供するための穴2が設けられてい
る。
The side plate 15 is provided with a hole 2 for providing an optical path perpendicular to the steam flow M passing through the steam flow path 20.

励起用電子ビームeは、第2図の右端に示されるフィラ
メント25を加熱することによって発生され、モニター
しようとする蒸発物Mを構成する原子の外殻電子を励起
するのに充分な200eV以下の比較的低いエネルギー
の電子を発生させるように加速されている。陽極27は
、蒸気流路20の向こう側の端板6の部分に配置され、
フィラメント25で発生された励起用電子eが、蒸気流
Mを横切って走行するように構成されている。
The excitation electron beam e is generated by heating the filament 25 shown at the right end of FIG. They are accelerated to produce relatively low energy electrons. The anode 27 is disposed in a portion of the end plate 6 on the other side of the steam flow path 20,
The excitation electrons e generated by the filament 25 are configured to travel across the vapor flow M.

正に帯電した収束電極28.29は、制限された形状を
持つ励起用ビームを形成するように電子ビーム経路eに
配置されている。
Positively charged focusing electrodes 28, 29 are arranged in the electron beam path e to form an excitation beam with a restricted shape.

蒸気流路20を通過した蒸気流Mは、フィラメント25
、収束電極28、および29を用いて発生・加速された
励起用電子eによって励起され、この励起されたものが
準安定状態に戻る際に生ずる、その蒸気の物質特有の発
光pは、穴22を通して外部に取り出される。この取り
出された光pは、光学フィルタあるいはモノクロメータ
を介した後、フォトマルのような光検出器によって電気
信号に変換され、蒸着速度のモニターやコントロールに
利用される。
The steam flow M that has passed through the steam flow path 20 passes through the filament 25
, focusing electrodes 28 and 29 are used to generate and accelerate the excitation electrons e, and when the excited electrons return to a metastable state, the light emission p peculiar to the substance of the vapor is emitted from the hole 22. It is taken out to the outside through. The extracted light p passes through an optical filter or a monochromator, and then is converted into an electrical signal by a photodetector such as a photomultiplier, and is used for monitoring and controlling the deposition rate.

(発明が解決しようとする問題点) 第2図に示すような構成の従来の真空蒸着のモニタリン
グ用センサーは、陰極に高温のフィラメント25を用い
るため、フィラメント自体の発光が蒸気の発光に重畳し
てノイズとなり、蒸気の発光pが微弱なときは、発光p
がそのノイズの中に埋没されてしまって検出が不可能に
なる欠点があった。
(Problems to be Solved by the Invention) Since the conventional vacuum evaporation monitoring sensor configured as shown in FIG. 2 uses a high-temperature filament 25 as the cathode, the light emission of the filament itself is superimposed on the light emission of the vapor. When the luminescence p of the vapor is weak, the luminescence p
This has the disadvantage that it is buried in the noise and cannot be detected.

例えば、MBE装置でGaAs、InP、InGaAs
P等のm−v族、Zn5e、ZnS等のn−VI族の薄
膜を作成するとき、分子線はV族では4原子分子、■族
では2原子分子が発生する。
For example, in MBE equipment, GaAs, InP, InGaAs
When forming a thin film of an m-v group such as P, or an n-VI group such as Zn5e, ZnS, etc., a four-atom molecular beam is generated for the V group, and a diatomic molecule is generated for the ■ group.

そして例えばAsの分子線を発生させると、その分子か
らの発光は、300nm以上の長波長側にある。
For example, when a molecular beam of As is generated, the light emitted from the molecule is on the long wavelength side of 300 nm or more.

さて、従来の熱フィラメントを用いる真空蒸着のモニタ
ーリング用センサーによる、上記Asの分子線の発光の
測定値をグラフに描かせてみたところ、第3図の曲線へ
のようになっていた。分析したところ、300nm以上
の光が強度にして、As蒸気の予期される発光量の10
0倍近くもあった。これは明らかにフィラメントからの
発光が重畳された為である。当然のことながらAsから
の発光は完全にその中に埋没されて検出不能となってい
た。
Now, when I plotted a graph of the measured values of the light emission of the As molecular beam using a conventional sensor for monitoring vacuum evaporation using a hot filament, it turned out to be a curve like that shown in Figure 3. Analysis revealed that the intensity of light with a wavelength of 300 nm or more is 10% of the expected luminescence amount of As vapor.
It was almost 0 times. This is clearly because the light emission from the filament was superimposed. Naturally, the light emitted from As was completely buried in it and could not be detected.

(発明の目的) 本発明は、フィラメントの発光に起因するノイズを取り
除き、蒸気の発光が微弱なときも安定に、蒸気の発光を
検出することの出来る真空蒸着のモニタリング用センタ
ーの提供を目的とする。
(Objective of the Invention) The purpose of the present invention is to provide a monitoring center for vacuum evaporation that can remove noise caused by filament light emission and stably detect vapor emission even when the vapor emission is weak. do.

(問題点を解決するための手段) 本発明は、陰極から出た電子が、陽極に向かって走行し
、蒸発物を電子衝撃するまでの電子ビーム経路の少なく
とも一部に、前記陽極・陰極間の電界に直交する磁場を
設定する。
(Means for Solving the Problems) The present invention provides a method in which the electrons emitted from the cathode travel toward the anode and are placed between the anode and the cathode in at least a part of the electron beam path until they impact the evaporated matter. Set the magnetic field orthogonal to the electric field.

(作用) 電子ビームを、上記のように設定した磁場内を通過させ
ることによって、電子ビーム経路を太きく湾曲させ、電
子が蒸発物を衝撃して発光を生ずる場所からは電子の発
生源のフィラメントが見通せないようにし、発生源から
の雑音の混入を防止する。
(Function) By passing the electron beam through the magnetic field set as above, the electron beam path is curved sharply, and from the place where the electrons impact the evaporated material and generate light emission, the electron beam is passed through the filament of the electron source. to prevent noise from being mixed in from the source.

(実施例) 次にこの発明を実施例により図を用いて詳細に説明する
(Example) Next, the present invention will be explained in detail by way of an example using figures.

第2図A、  Bは第2図の平面断面図、正面図である
が、これに対応して、本発明の実施例を、第1図A、第
1図Bのように示すことが出来る。同一部材には同一符
号を付しであるので説明を省略する。
2A and 2B are a plan sectional view and a front view of FIG. 2, and correspondingly, embodiments of the present invention can be shown as in FIGS. 1A and 1B. . Identical members are designated by the same reference numerals, and therefore their explanations will be omitted.

この実施例では、電子ビーム即ち電界に直角の方向に磁
石3を用いて磁界Bが印加されている。
In this embodiment, a magnetic field B is applied using a magnet 3 in a direction perpendicular to the electron beam, ie, the electric field.

30は、2つの磁石3を連結する継鉄である。この磁界
のため、電子ビームは図示のように湾曲した経路をとり
、電子ビームeが蒸発物Mと交差する発光場所からは、
フィラメント25は隠れて見通せないようになっている
。従って、発光pの中にフィラメント25の光が雑音と
して混入し検出されるような従来の不具合は除去される
30 is a yoke that connects the two magnets 3. Because of this magnetic field, the electron beam takes a curved path as shown in the figure, and from the emission point where the electron beam e intersects the evaporator M,
The filament 25 is hidden and cannot be seen. Therefore, the conventional problem that the light from the filament 25 is mixed into the emitted light p and detected as noise is eliminated.

この実施例の装置で、条件を同一にして測定した、上記
Asの分子線の発光の測定値のグラフを、第3図の曲線
Bに示す。フィラメントを発してノイズとなっていた3
 00 nm以上の光が消失した為、As蒸気の発光が
埋没を免れて姿を現し、明瞭に記録されているのが・判
る。
Curve B in FIG. 3 is a graph of the measured values of the light emission of the As molecular beam, which was measured using the apparatus of this example under the same conditions. The filament was emitting noise 3
It can be seen that because the light of 0.00 nm or more disappeared, the light emitted from the As vapor escaped the burial and appeared and was clearly recorded.

As以外の蒸発物についても、上記同様の好成績が得ら
れた。
Similar good results were obtained for evaporated substances other than As.

(発明の効果) 本発明は以上説明したような構成と作用を有しているの
で、フィラメントの発光に起因するノイズを取り除き、
蒸気の発光が微弱なときも安定に、蒸気の発光を検出す
ることの出来る真空蒸着のモニタリング用センターが提
供される。
(Effects of the Invention) Since the present invention has the configuration and operation as described above, noise caused by light emission of the filament is removed,
Provided is a vacuum deposition monitoring center that can stably detect vapor emission even when the vapor emission is weak.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図Aは、本発明の真空蒸着のモニターリング用セン
サーの1実施例の平面断面図。 第1図Bは、その正面図。 第2図は、従来の真空蒸着のモニターリング用センサー
の斜視図。 第2図A、  Bは、その第1[JA、Bと同様の図。 第3図は、Asの分子線の発光の測定値のグラフであっ
て、曲線Bは本発明の装置のもの、曲線Aは従来のHa
のものを示す。 10・・・センサー、   12・・・底板、14.1
5・・・側板、  16.17・・・端板、20・・・
蒸気流路、   22・・・穴、25・・・フィラメン
ト、28.29・・・収束電極、30・・・継鉄、  
3・・・磁石、  e・・・電子ビーム、M・・・蒸発
物、  p・・・発光。 特許出願人 日電アネルバ株式会社 代理人 弁理士   村上 健次 41九歩−舌 〔mw)
FIG. 1A is a plan sectional view of one embodiment of the vacuum deposition monitoring sensor of the present invention. FIG. 1B is a front view thereof. FIG. 2 is a perspective view of a conventional vacuum deposition monitoring sensor. Figures 2A and 2B are similar to the first figure [JA,B]. FIG. 3 is a graph of measured values of light emission of molecular beams of As, where curve B is that of the device of the present invention and curve A is that of the conventional Ha
Show things. 10...Sensor, 12...Bottom plate, 14.1
5...Side plate, 16.17...End plate, 20...
Steam flow path, 22... Hole, 25... Filament, 28.29... Focusing electrode, 30... Yoke,
3... Magnet, e... Electron beam, M... Evaporated matter, p... Luminescence. Patent Applicant Nichiden Anelva Co., Ltd. Agent Patent Attorney Kenji Murakami 41 Nine Steps - Tongue [mw]

Claims (1)

【特許請求の範囲】[Claims] (1)電子衝撃によって励起された蒸発物が、準安定状
態に戻る際に発生する電子衝撃光の発光強度を検出して
、前記蒸発物の蒸発速度を測定するように構成した真空
蒸着のモニタリング用センサーにおいて、 蒸発物を電子衝撃するための電子を発生する陰極から、
電子が陽極に向かって走行して該蒸発物を照射する領域
に至るまでの電子ビーム経路の少なくとも一部に、前記
陽極・陰極間の電界に直交する磁界を設定したことを特
徴とする真空蒸着のモニタリング用センター。
(1) Monitoring of vacuum evaporation configured to measure the evaporation rate of the evaporated material by detecting the emission intensity of electron impact light generated when the evaporated material excited by electron impact returns to a metastable state In the sensor, from the cathode that generates electrons to bombard the evaporated matter
Vacuum evaporation characterized in that a magnetic field orthogonal to the electric field between the anode and the cathode is set in at least a part of the electron beam path from where the electrons travel toward the anode to the region where the evaporated material is irradiated. monitoring center.
JP29221286A 1986-12-08 1986-12-08 SHINKUJOCHAKUNOMONITARINGUYOSENSAA Expired - Lifetime JPH0248625B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29221286A JPH0248625B2 (en) 1986-12-08 1986-12-08 SHINKUJOCHAKUNOMONITARINGUYOSENSAA

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29221286A JPH0248625B2 (en) 1986-12-08 1986-12-08 SHINKUJOCHAKUNOMONITARINGUYOSENSAA

Publications (2)

Publication Number Publication Date
JPS63145767A true JPS63145767A (en) 1988-06-17
JPH0248625B2 JPH0248625B2 (en) 1990-10-25

Family

ID=17778967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29221286A Expired - Lifetime JPH0248625B2 (en) 1986-12-08 1986-12-08 SHINKUJOCHAKUNOMONITARINGUYOSENSAA

Country Status (1)

Country Link
JP (1) JPH0248625B2 (en)

Also Published As

Publication number Publication date
JPH0248625B2 (en) 1990-10-25

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