JPS63143505A - Production of solid state color image pickup device - Google Patents
Production of solid state color image pickup deviceInfo
- Publication number
- JPS63143505A JPS63143505A JP61291081A JP29108186A JPS63143505A JP S63143505 A JPS63143505 A JP S63143505A JP 61291081 A JP61291081 A JP 61291081A JP 29108186 A JP29108186 A JP 29108186A JP S63143505 A JPS63143505 A JP S63143505A
- Authority
- JP
- Japan
- Prior art keywords
- film
- colored
- dyed
- photoelectric conversion
- recesses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000007787 solid Substances 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 238000004043 dyeing Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000003384 imaging method Methods 0.000 claims description 13
- 238000005553 drilling Methods 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 13
- 108010010803 Gelatin Proteins 0.000 abstract description 11
- 229920000159 gelatin Polymers 0.000 abstract description 11
- 239000008273 gelatin Substances 0.000 abstract description 11
- 235000019322 gelatine Nutrition 0.000 abstract description 11
- 235000011852 gelatine desserts Nutrition 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000000975 dye Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 239000001045 blue dye Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000001046 green dye Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 239000001044 red dye Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
Landscapes
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、カラー固体撮像装置の製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method of manufacturing a color solid-state imaging device.
従来の技術
従来のカラー固体撮像装置の製造方法について図面を参
照しながら説明する。2. Description of the Related Art A conventional method for manufacturing a color solid-state imaging device will be described with reference to the drawings.
第２図は従来のカラー固体撮像装置の製造方法を段階的
に示すものである。FIG. 2 shows a step-by-step process for manufacturing a conventional color solid-state imaging device.
Ｐ型シリコン基板１に公知の所定の方法により選択拡散
、エツチング処理、開孔などを行ない、固体撮像装置に
必要なＮ型領域を設けＰＮ接合光電変換部２、素子分離
シリコン酸化膜３、パッシベーション膜として堆積シリ
コン酸化膜４を形成する。（第２図ａ）
次に、被染色膜として感光性をもたせたゼラチンを塗布
し、フォトリソ法により、所定のＰＮ接合光電変換部上
のみ被染色膜を残し、所定の染料、たとえば赤色染料で
もって染色し、着色膜５を形成する。さらに、着色膜間
の防染用としてアクリル系感光性樹脂を塗布し、フォト
リソ法により中間膜６ａを形成する。（第２図ｂ）
次に、上記と同様に、所定のＰＮ接合光電変換部上に被
染色膜をフォトリソ法によって形成し、所定の染料たと
えば、緑色染料でもって染色し、着色膜７を形成する。Selective diffusion, etching, opening, etc. are performed on the P-type silicon substrate 1 by a known predetermined method to provide an N-type region necessary for a solid-state imaging device, and a PN junction photoelectric conversion section 2, an element isolation silicon oxide film 3, and a passivation layer are formed. A deposited silicon oxide film 4 is formed as a film. (Figure 2a) Next, photosensitive gelatin is applied as a dyed film, and by photolithography, the dyed film is left only on the predetermined PN junction photoelectric conversion part, and a predetermined dye, for example, red dye is applied. It is dyed to form a colored film 5. Furthermore, an acrylic photosensitive resin is applied for resisting between the colored films, and an intermediate film 6a is formed by photolithography. (Fig. 2b) Next, in the same manner as above, a film to be dyed is formed on a predetermined PN junction photoelectric conversion part by photolithography, and dyed with a predetermined dye, for example, a green dye, to form a colored film 7. do.
その後、防染用として、アクリル系感光性樹脂を用いて
フォトリソ法により中間膜６ｂを形成する。さらに、所
定のＰＮ接合光電変換部上に被染色膜を７オトリソ法を
用いて形成し、所定の染料たとえば青色染料でもって染
色し、着色膜８を形成する。そののち、カラー固体撮像
装置を保護するため、アクリル系感光性樹脂を塗布し、
フォトリン法により保護膜９を形成する。（第２図Ｃ）
発明が解決しようとする問題点
しかしながら、上記のような構成では、第２図Ｃに例示
したような斜め光１０が入射することがあり、カラーフ
ィルタを通った光とカラーフィルタを通らない光が混っ
てＰＮ接合光電変換部に入射することがある。この原因
は、着色膜の間に中間膜が存在するからで、この影響は
、色数が増え、特に上層の着色膜で大きくなる。したが
って、この斜め光の入射を極力防ぐことが課題となって
いた。Thereafter, an intermediate film 6b is formed for resist dyeing by photolithography using an acrylic photosensitive resin. Furthermore, a dyed film is formed on a predetermined PN junction photoelectric conversion portion using a 7-otolithography method, and is dyed with a predetermined dye, such as a blue dye, to form a colored film 8. After that, acrylic photosensitive resin was applied to protect the color solid-state imaging device.
A protective film 9 is formed by the photorin method. (Figure 2C) Problems to be Solved by the Invention However, in the above configuration, oblique light 10 as illustrated in Figure 2C may be incident, and the light passing through the color filter and the color Light that does not pass through the filter may be mixed and enter the PN junction photoelectric conversion section. This is because there is an intermediate film between the colored films, and this effect becomes greater as the number of colors increases, especially in the upper colored film. Therefore, it has been a challenge to prevent the incidence of this oblique light as much as possible.
本発明は、これらの課題を解決するためになされたもの
で、斜め光の入射を減少させ実用に足るカラー固体撮像
装置の製造方法を提供するものである。The present invention has been made to solve these problems, and provides a method for manufacturing a color solid-state imaging device that reduces the incidence of oblique light and is suitable for practical use.
問題点を解決するための手段
本発明のカラー固体撮像装置の製造方法は、所定の光電
変換部上のパッシベーション膜ヲカラーモザイクフィル
タに要する膜厚分だけ穿ち、パッシベーション膜に凹部
を形成し、前記凹部に被染色膜を形成し、所定の染料で
もって染色を施すことを繰返し行なうことから構成され
ている。Means for Solving the Problems In the method of manufacturing a color solid-state imaging device of the present invention, a passivation film on a predetermined photoelectric conversion section is bored by the film thickness required for a color mosaic filter, a recess is formed in the passivation film, and a recess is formed in the passivation film. It consists of repeatedly forming a dyed film in the recessed portions and dyeing them with a predetermined dye.
作 用
この構成によって、全ての着色膜を同一平面上に形成す
ることができる。Function: With this configuration, all colored films can be formed on the same plane.
実施例
本発明の一実施例について図面を参照しながら以下に説
明する。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第１図は、本発明の一実施例のカラー固体撮像装置の製
造方法を段階的に示すものである。FIG. 1 shows step-by-step a method for manufacturing a color solid-state imaging device according to an embodiment of the present invention.
Ｐ型シリコン基板１００に公知の所定の方法によシ選択
拡散、エツチング処理、゛開孔などを行ない、固体撮像
装置に必要なＮ型領域を設けＰＮ接合光電変換部１０１
、素子分離シリコン酸化膜１ｏ２、パッシベーション膜
として堆積シリコン酸化膜１０３を形成する。（第１図
ａ）次に、堆積シリコン酸化膜１０３上にポジレストを
塗布し、所定のＰＮ接合光電変換部上のみフォトリン法
でポジレジストを取り除いたポジレジストパターン１０
４を形成する。次に、ウェットエツチング法またはドラ
イエツチング法によシ、着色膜として必要な膜厚分だけ
堆積シリコン酸化膜１０３を除去し、堆積シリコン酸化
膜内に凹部１０５を形成する。次に被染色膜としてネガ
型感光性をもたせたゼラチンを塗布し、ゼラチン塗布膜
１０６を形成する。（第１図ｂ）
次に、前記ポジレジストパターン１０４を形成したフォ
トマスクを用い、前記ゼラチン塗布膜１０６をフォトリ
ソ法でパターンニングし、被染色膜を形成する。該被染
色膜を所定の染料、たとえば赤色染料でもって染色を施
し、着色膜１０７を形成する。次に、ポジレジストパタ
ーン１０４を除去し、新たに、ポジレジストを塗布し、
所定のＰＮ接合光電変換部１０１上のみフォトリソ法で
ポジレジストを取り除いたポジレジストパターン１０８
を形成する。次に、ウェットエツチング法またはドライ
エツチング法により、着色膜として必要な膜厚分だけ堆
積シリコン酸化膜１０３を除去し、堆積シリコン酸化膜
内に凹部１０９を形成する。次に、被染色膜としてネガ
型感光性をもたせたゼラチンを塗布し、ゼラチン塗布膜
１１０を形成する。（第１図Ｃ）
次に、前記ポジレジストパターン１０８を形成したフォ
トマスクを用い、前記ゼラチン塗布膜１１０をフォトリ
ソ法でパターンニングシ、被染色膜を形成する。該被染
色膜を所定の染料、たとえば緑色染料でもって染色を施
し、着色膜１１１を形成する。次に、ポジレジストパタ
ーン１０８を除去する。次に、着色膜１０７、着色膜１
１１を形成したと同様の工程を繰り返して被染色膜を形
成し、所定の染料、たとえば青色染料でもって染色を施
し、着色膜１１２を形成し、着色膜１１２を形成時に用
いたポジレジストを除去し、新たに１アクリル系透明樹
脂によりカラーフィルタ保護のための保護膜１１３を形
成する。A P-type silicon substrate 100 is selectively diffused, etched, and pore-opened by a known predetermined method to provide an N-type region necessary for a solid-state imaging device and a PN junction photoelectric conversion section 101.
, an element isolation silicon oxide film 1o2, and a deposited silicon oxide film 103 as a passivation film. (FIG. 1a) Next, a positive resist pattern 10 is obtained by applying a positive resist onto the deposited silicon oxide film 103 and removing the positive resist only on a predetermined PN junction photoelectric conversion part using a photorin method.
form 4. Next, by wet etching or dry etching, the deposited silicon oxide film 103 is removed by a thickness necessary as a colored film, and a recess 105 is formed in the deposited silicon oxide film. Next, gelatin with negative photosensitivity is applied as a dyed film to form a gelatin coating film 106. (FIG. 1b) Next, using a photomask on which the positive resist pattern 104 is formed, the gelatin coating film 106 is patterned by photolithography to form a dyed film. The dyed film is dyed with a predetermined dye, for example, a red dye, to form a colored film 107. Next, the positive resist pattern 104 is removed and a new positive resist is applied.
A positive resist pattern 108 in which the positive resist is removed only on a predetermined PN junction photoelectric conversion section 101 by photolithography.
form. Next, by wet etching or dry etching, the deposited silicon oxide film 103 is removed by a thickness necessary for the colored film, and a recess 109 is formed in the deposited silicon oxide film. Next, gelatin with negative photosensitivity is applied as a dyed film to form a gelatin coating film 110. (FIG. 1C) Next, using a photomask with the positive resist pattern 108 formed thereon, the gelatin coating film 110 is patterned by photolithography to form a dyed film. The dyed film is dyed with a predetermined dye, for example, a green dye, to form a colored film 111. Next, the positive resist pattern 108 is removed. Next, colored film 107, colored film 1
A dyed film is formed by repeating the same process as in forming 11, and dyed with a predetermined dye, for example, a blue dye, to form a colored film 112, and the positive resist used when forming the colored film 112 is removed. Then, a protective film 113 for protecting the color filter is newly formed using acrylic transparent resin.
なお、本実施例では、ゼラチン塗布膜形成後、フォトリ
ン法で被染色膜をパターンニングし、染色を施し着色膜
を形成したが、感光性をもたないゼラチンを塗布し塗布
膜を形成し、染色の後、下層のポジレジストパターン除
去と同時にポジレジスト上のゼラチン塗布膜を除去し、
着色膜を形成してもよい。In this example, after forming a gelatin coating film, the dyed film was patterned using the photorin method and dyed to form a colored film. After dyeing, the gelatin coating film on the positive resist is removed at the same time as the underlying positive resist pattern is removed.
A colored film may also be formed.
発明の効果
以上の説明のように本発明は、中間膜を省くことができ
、各染色パターンが同一平面上にあることから斜め光の
入射による影響を抑えることができる。このように本発
明は、カラー固体撮像装置の製造方法に与える効果は大
なるものがある。Effects of the Invention As described above, in the present invention, the intermediate film can be omitted, and since each dyeing pattern is on the same plane, the influence of oblique light incident can be suppressed. As described above, the present invention has a great effect on the method of manufacturing a color solid-state imaging device.
第１図は本発明の一実施例のカラー固体撮像装置の製造
方法を段階的に示した断面図、第２図は従来のカラー固
体撮像装置の製造方法を段階的に示した断面図である。
１００・・・・・Ｐ型シリコン基板、１０１・・・・・
・ＰＮ接合光電変換部、１０２・・・・・・素子分離シ
リコン酸化膜、１ｏ３・・・・・・堆積シリコン酸化膜
、１０４゜１０８・・・・・・ポジレジストパターン、
１０６，１０９・・・・・・凹部、１０６，１１０・・
・・・・ゼラチン塗布膜、１０７．１１１，１１２・・
・・・・着色膜、１１３・・・・・保護膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ｆＩ
Ｉ！１図
ず００・−Ｐ’ｌシリコ靭FIG. 1 is a cross-sectional view showing step-by-step a method for manufacturing a color solid-state imaging device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a step-by-step method for manufacturing a conventional color solid-state imaging device. . 100...P-type silicon substrate, 101...
・PN junction photoelectric conversion section, 102...Element isolation silicon oxide film, 1o3...Deposited silicon oxide film, 104°108...Positive resist pattern,
106,109... recess, 106,110...
...gelatin coating film, 107.111,112...
...Colored film, 113...Protective film. Name of agent: Patent attorney Toshio Nakao and one other fI
I! 1 Zuzu00・-P'l silicon toughness
Claims (1)
、前記光電変換部上にパッシベーション膜を形成する工
程と、前記光電変換部上のパッシベーション膜をカラー
モザイクフィルタに要する膜厚分だけ穿って、パッシベ
ーション膜に凹部を形成し前記凹部に被染色性有機材料
を充填させて被染色膜を形成する工程と、前記被染色膜
に染色を施す工程とをそなえたことを特徴とするカラー
固体撮像装置の製造方法。A step of forming a plurality of photoelectric conversion sections on the surface of a semiconductor substrate, a step of forming a passivation film on the photoelectric conversion section, and a step of drilling the passivation film on the photoelectric conversion section by a film thickness required for a color mosaic filter. A color solid-state imaging device comprising the steps of forming a recess in a passivation film and filling the recess with an organic material to be dyed to form a film to be dyed, and a step of dyeing the film to be dyed. Method of manufacturing the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61291081A JPS63143505A (en) | 1986-12-05 | 1986-12-05 | Production of solid state color image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61291081A JPS63143505A (en) | 1986-12-05 | 1986-12-05 | Production of solid state color image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63143505A true JPS63143505A (en) | 1988-06-15 |
Family
ID=17764189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61291081A Pending JPS63143505A (en) | 1986-12-05 | 1986-12-05 | Production of solid state color image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63143505A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0250478A (en) * | 1988-08-12 | 1990-02-20 | Nec Kyushu Ltd | Color filter |
-
1986
- 1986-12-05 JP JP61291081A patent/JPS63143505A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0250478A (en) * | 1988-08-12 | 1990-02-20 | Nec Kyushu Ltd | Color filter |
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