JPS63140435A - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPS63140435A JPS63140435A JP61286299A JP28629986A JPS63140435A JP S63140435 A JPS63140435 A JP S63140435A JP 61286299 A JP61286299 A JP 61286299A JP 28629986 A JP28629986 A JP 28629986A JP S63140435 A JPS63140435 A JP S63140435A
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- thin film
- copper
- zinc sulfide
- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 20
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 20
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010949 copper Substances 0.000 claims abstract description 18
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 229910052718 tin Inorganic materials 0.000 claims abstract description 14
- 239000011135 tin Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 abstract description 24
- 230000003287 optical effect Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 abstract description 8
- 239000000843 powder Substances 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 239000010937 tungsten Substances 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000007704 transition Effects 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001938 differential scanning calorimetry curve Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) ・ 本発明は情報記録媒体に関する。[Detailed description of the invention] (Industrial application field) - The present invention relates to an information recording medium.
(従来の技術)
近年来、各種の技術分野において高密度記録再生が要求
されるようになり、色々な形式の情報記録媒体による高
密度記録再生が行なわれるようになったが、その一つと
して非晶質の状態と結晶の状態との間の相転移が可逆的
に行なわれるような記録材料を用いた書換え可能な情報
記録媒体についての研究も盛んに行なわれるようになっ
た。(Prior Art) In recent years, high-density recording and reproduction has been required in various technical fields, and high-density recording and reproduction has been carried out using various types of information recording media. Research on rewritable information recording media using recording materials that reversibly undergo a phase transition between an amorphous state and a crystalline state has also become active.
そして、従来、書換えの可能な情報記録媒体を構成する
ために、非晶質の状態と結晶の状態との間の相転移が可
逆的に行なわれるような記録材料として発表されている
記録材料としては、例えばTe0x−Ge−5nや、5
n−Te−8sなどがあり、これらの記録材料をプラス
チックス製の基板あるいはガラス製の基板上に所定の厚
さの薄膜となるように成膜し、急熱急冷の条件、または
除熱徐冷の条件によりレーザ光で交互に照射することに
より、記録材料の薄膜の光学特性を可逆的に変化させて
、書換えの可能な情報記録媒体として使用されるように
していた。Conventionally, in order to construct a rewritable information recording medium, a recording material that undergoes a reversible phase transition between an amorphous state and a crystalline state has been announced. For example, Te0x-Ge-5n, 5
n-Te-8s, etc. These recording materials are formed into a thin film of a predetermined thickness on a plastic substrate or a glass substrate, and then subjected to rapid heating and cooling conditions or heat removal and slow cooling conditions. By alternately irradiating it with laser light under cold conditions, the optical properties of the thin film of the recording material were reversibly changed, allowing it to be used as a rewritable information recording medium.
(発明が解決しようとする問題点)
ところが、非晶質の状態と結晶の状態との間の相転移が
可逆的に行なわれることを利用する書換え可能な記録材
料として従来発表されている記録材料は数が少なく、ま
た、従来の記録材料は結晶化温度が低いことにより、非
晶質状態から結晶状態への相転移が容易に生じて、記録
された情報が失われるようなことが起こるために記録情
報の保存性が悪く、さらに、記録材料中で使用されてい
るテルルが酸化し易いために、テルルの酸化により記録
特性に経時的な劣化が生じることが問題になった。(Problems to be Solved by the Invention) However, recording materials that have been previously announced as rewritable recording materials that utilize the reversible phase transition between an amorphous state and a crystalline state Due to the low crystallization temperature of conventional recording materials, a phase transition from an amorphous state to a crystalline state easily occurs, resulting in the loss of recorded information. Furthermore, since the tellurium used in the recording material is easily oxidized, the oxidation of tellurium causes deterioration of the recording characteristics over time, which has become a problem.
(問題点を解決するための手段)
本発明はテルル、錫、硫化亜鉛、銅との混合物からなる
非晶質の薄膜を基板に付着形成した情報記録媒体、すな
わち、非晶質の状態と結晶の状態との間の相転移が確実
に可逆的に行なわれうる書換え可能な記録材料であって
、非晶質状態の安定性を左右する結晶化温度の高温度化
を図って、非晶質の状態が長期間にわたって保持されう
るような特性の安定な書換え可能な情報記録媒体で、し
かも、テルルの酸化が抑制されるような情報記録媒体を
提供して前記した従来の諸問題点を解決したものである
。(Means for Solving the Problems) The present invention provides an information recording medium in which an amorphous thin film made of a mixture of tellurium, tin, zinc sulfide, and copper is adhered to a substrate, that is, an amorphous state and a crystalline state. This is a rewritable recording material that can reliably undergo a phase transition between the amorphous state and the amorphous state. To solve the above-mentioned conventional problems by providing a stable rewritable information recording medium with characteristics such that the state can be maintained for a long period of time, and in which oxidation of tellurium is suppressed. This is what I did.
(実施例)
以下、添付図面を参照して本発明の情報記録媒体の具体
的な内容を詳細に説明する。第1図は本発明の情報記録
媒体の一部の縦断側面図であって。(Example) Hereinafter, specific contents of the information recording medium of the present invention will be explained in detail with reference to the accompanying drawings. FIG. 1 is a longitudinal sectional side view of a part of the information recording medium of the present invention.
第1図において1は基板、2は記録材料により基板1上
に成膜された薄膜であり、この記録材料の薄膜2は、そ
れの成膜時の状態においてテルル、錫、硫化亜鉛、銅と
の混合物からなる非晶質の薄膜となされている。In FIG. 1, 1 is a substrate, and 2 is a thin film formed on the substrate 1 using a recording material.The thin film 2 of this recording material contains tellurium, tin, zinc sulfide, and copper in the state at the time of film formation. It is made into an amorphous thin film consisting of a mixture of
本発明の情報信号記録媒体、すなわち、テルル、錫、硫
化亜鉛、銅との混合物からなる非晶質の薄膜2を基板1
に付着形成した情報記録媒体は、例えば次のようにして
作られる。The information signal recording medium of the present invention, that is, an amorphous thin film 2 made of a mixture of tellurium, tin, zinc sulfide, and copper is deposited on a substrate 1.
The information recording medium formed by adhering to the substrate is produced, for example, in the following manner.
硫化亜鉛(ZnS)の粉末と、テルル(Te)の粉末と
、錫(S n)の粉末と、銅(Cu)の粉末とを。Zinc sulfide (ZnS) powder, tellurium (Te) powder, tin (Sn) powder, and copper (Cu) powder.
それぞれ別個のタングステン製のボートに入れ、I X
IO’Paの真空度の真空雰囲気中で通電加熱によって
前記した4個のボート中の粉末を、前記した真空雰囲気
中に設置されているプリグループ付きの円盤状のアクリ
ル基板またはガラス基板に共蒸着して、前記のプリグル
ープ付きの基板1上に膜厚が略々1100nの記録材料
による非晶質の薄膜2を成膜する。Each in a separate tungsten boat, I
The powder in the four boats described above is co-deposited by electrical heating in a vacuum atmosphere with a vacuum degree of IO'Pa onto a disc-shaped acrylic substrate or glass substrate with a pre-group installed in the vacuum atmosphere. Then, an amorphous thin film 2 of a recording material having a film thickness of approximately 1100 nm is formed on the substrate 1 with the pre-groups.
前記のようにして基板1上に付着形成された記録材料に
よる非晶質の薄膜2は、テルル、錫、硫化亜鉛、銅との
混合物からなる非晶質の薄膜2であり、第2図は前記し
た記録材料の非晶質の薄膜の示差走査熱量計(ディファ
レンシャル・スキャニング・カロリーメータ)によるD
SC曲線である。The amorphous thin film 2 of the recording material deposited on the substrate 1 as described above is an amorphous thin film 2 made of a mixture of tellurium, tin, zinc sulfide, and copper, and FIG. D of the amorphous thin film of the recording material described above by a differential scanning calorimeter
It is an SC curve.
第2図によると前記した記録材料の非晶質の薄膜2すな
わちテルル、錫、硫化亜鉛、銅との混合物による非晶質
の薄膜は、170℃付近に非晶質の状態から結晶状態に
転移する際の発熱ピークが観察されるが、この相転移を
起こす温度(結晶化温度Tx)は、硫化亜鉛と銅との一
方または双方のものの添加量の増加によって高くなる。According to FIG. 2, the amorphous thin film 2 of the recording material described above, that is, the amorphous thin film made of a mixture of tellurium, tin, zinc sulfide, and copper, transitions from an amorphous state to a crystalline state at around 170°C. An exothermic peak is observed during this phase transition, but the temperature at which this phase transition occurs (crystallization temperature Tx) increases as the amount of one or both of zinc sulfide and copper increases.
そして、前記した結晶化温度Txが高い程、非晶質の状
態から結晶の状態への相転移が起こり難くなるために、
記録された情報の劣化が少なく、長期にわたって情報を
保存することが可能になる。The higher the crystallization temperature Tx mentioned above, the more difficult it is for phase transition from an amorphous state to a crystalline state to occur.
Deterioration of recorded information is reduced, making it possible to preserve information for a long period of time.
前記した硫化亜鉛は相転移を起こす温度(結晶化温度T
x)を上昇させて非晶質の状態(成膜直後の状態)を安
定にするだけではなく、耐湿度性及び耐酸化性をも著る
しく向上させる。The above-mentioned zinc sulfide has a phase transition temperature (crystallization temperature T).
x), which not only stabilizes the amorphous state (the state immediately after film formation), but also significantly improves humidity resistance and oxidation resistance.
テルル、錫、硫化亜鉛、銅との混合物からなる非晶質の
薄膜2を基板1に付着形成した本発明の情報記録媒体に
は、まず、前記の記録材料の非晶質の薄膜2に例えばフ
ラッシュランプを用いて光学的なエネルギを加えること
により、成膜直後の非晶質の状態を結晶状態に相転移さ
せるイニシャライズ(あるいは初期結晶化)が行なわれ
、それにより薄膜2の光学特性が変化する。In the information recording medium of the present invention, in which an amorphous thin film 2 made of a mixture of tellurium, tin, zinc sulfide, and copper is deposited on a substrate 1, first, the amorphous thin film 2 of the recording material is coated with, for example, By applying optical energy using a flash lamp, initialization (or initial crystallization) that changes the phase from the amorphous state immediately after film formation to the crystalline state is performed, which changes the optical properties of the thin film 2. do.
第3図はテルル、錫、硫化亜鉛、銅との混合物からなる
非晶質の薄膜2における光の反射率と、その薄膜を前記
のように初期結晶化した状態における光の率射率とを示
す特性曲線図である。この第3図に示されている薄膜2
の光の反射率の特性曲線によると、初期結晶化によって
光の波長が780nm〜830nmの光に対する光の反
射率が上昇していることが判かる。Figure 3 shows the light reflectance of an amorphous thin film 2 made of a mixture of tellurium, tin, zinc sulfide, and copper, and the light emissivity of the thin film in the initial crystallized state as described above. FIG. Thin film 2 shown in this FIG.
According to the characteristic curve of light reflectance, it can be seen that the reflectance of light with a wavelength of 780 nm to 830 nm increases due to initial crystallization.
そして、前記のイニシャライズによって結晶状態とされ
た記録材料による薄膜2を有する情報記録媒体は、それ
が所定の回転数(例えば、毎分1800回転)で回転さ
れている状態において、5〜9mwの出力の半導体レー
ザがら情報信号によって強度変調されているレーザ光(
波長780nm)の光スポットで、結晶状態にされてい
る記録材料による薄膜2を照射すると、前記した記録材
料の薄膜2におけるレーザ光の照射部分が相転移によっ
て非晶質の状態に戻されて情報信号の記録が行なわれる
。The information recording medium having the thin film 2 made of the recording material brought into a crystalline state by the initialization has an output of 5 to 9 mW when it is rotated at a predetermined rotation speed (for example, 1800 revolutions per minute). A laser beam whose intensity is modulated by an information signal from a semiconductor laser (
When the thin film 2 made of the recording material in the crystalline state is irradiated with a light spot with a wavelength of 780 nm, the portion of the thin film 2 of the recording material irradiated with the laser beam returns to the amorphous state due to a phase transition, and the information is transferred. Recording of the signal takes place.
次に、情報記録媒体の回転数を1/4程度に下げて、8
〜15mwのレーザ光を照射すると、前記した非晶質の
状態の情報信号の記録部分は再び結晶状態に相転移して
情報信号の消去が行なわれる。記録と消去との動作は1
00回以上繰返して行なうことが可能である。Next, reduce the rotation speed of the information recording medium to about 1/4, and
When irradiated with a laser beam of ~15 mw, the information signal recording portion in the amorphous state undergoes a phase transition again to the crystalline state, and the information signal is erased. Recording and erasing operations are 1
It is possible to repeat this process 00 times or more.
前記した記録材料の薄膜2、すなわち、テルル、鑓、硫
化亜鉛、銅との混合物からなる非晶質の薄膜2は、それ
に対して光学的エネルギが付与されることによって、そ
れの光学的性質が著るしく変化するだけではなく、同時
に電気伝導度等も大きく変化するものであるから、本発
明の情報記録媒体を用いて情報信号の記録再生を行なう
場合には、記録時に光学的エネルギではなく、電気的、
熱的エネルギを用いて情報信号の記録を行なうことも可
能であり、また、情報記録媒体からの情報信号の再生に
際しては、光の透過率(光の反射率)の変化の検出とい
うような光学的特性の変化を検出する手段を用いる他に
、電気抵抗の変化、静電容量値の変化の検出というよう
な他の検出手段を用いて情報信号の再生を行なうように
することも可能である。The thin film 2 of the recording material described above, that is, the amorphous thin film 2 made of a mixture of tellurium, zinc sulfide, and copper, has its optical properties changed by applying optical energy to it. Not only does the electrical conductivity change significantly, but at the same time electrical conductivity etc. also change significantly. Therefore, when recording and reproducing information signals using the information recording medium of the present invention, it is necessary to use not only optical energy but also electrical conductivity during recording. ,Electrical,
It is also possible to record information signals using thermal energy, and optical techniques such as detecting changes in light transmittance (light reflectance) can be used to reproduce information signals from information recording media. In addition to using means for detecting changes in physical characteristics, it is also possible to reproduce information signals using other detection means, such as detecting changes in electrical resistance or changes in capacitance. .
前記したテルル、錫、硫化亜鉛、銅との混合物からなる
非晶質の薄膜2を基板1に付着形成した本発明の情報記
録媒体における前記した薄膜2の組成の一例を挙げると
、硫化亜鉛が12原子%。To give an example of the composition of the thin film 2 described above in the information recording medium of the present invention in which the amorphous thin film 2 made of a mixture of tellurium, tin, zinc sulfide, and copper is deposited on the substrate 1, zinc sulfide is 12 atom%.
テルルが55原子%〜60原子%、錫が14原子%〜2
0!JK子%、#が10原子%〜20i子%である。Tellurium is 55 at% to 60 at%, tin is 14 at% to 2
0! JK % and # are 10 atomic % to 20 atomic %.
(発明の効果)
以上、詳細に説明したところから明らかなように本発明
の情報記録媒体は、テルル、&l、硫化亜鉛、銅との混
合物からなる非晶質の薄膜を基板に付着形成して構成し
たことにより、物理的な特性及び化学的な特性の双方の
特性が安定で、書換可能な光ディスクを容易に提供する
ことができるのであり、この本発明の情報記録媒体によ
れば、既述した従来の諸問題点はすべて良好に解決され
るのである。(Effects of the Invention) As is clear from the above detailed explanation, the information recording medium of the present invention has an amorphous thin film made of a mixture of tellurium, &l, zinc sulfide, and copper deposited on a substrate. With this configuration, it is possible to easily provide a rewritable optical disc with stable physical and chemical properties.According to the information recording medium of the present invention, the above-mentioned All the problems of the prior art have been successfully solved.
第1図は本発明の情報記録媒体の一部の縦断側面図、第
2図は記録材料の薄膜2のDSC曲線、第3I3!は薄
膜の光に対する反射率特性曲線である。
1・・・基板、2・・・記録材料の薄膜。FIG. 1 is a vertical cross-sectional side view of a part of the information recording medium of the present invention, FIG. 2 is a DSC curve of a thin film 2 of recording material, and FIG. 3I3! is the reflectance characteristic curve of the thin film for light. 1...Substrate, 2...Thin film of recording material.
Claims (1)
薄膜を基板に付着形成した情報記録媒体An information recording medium in which an amorphous thin film made of a mixture of tellurium, tin, zinc sulfide, and copper is adhered to a substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61286299A JPS63140435A (en) | 1986-12-01 | 1986-12-01 | Information recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61286299A JPS63140435A (en) | 1986-12-01 | 1986-12-01 | Information recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63140435A true JPS63140435A (en) | 1988-06-13 |
Family
ID=17702578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61286299A Pending JPS63140435A (en) | 1986-12-01 | 1986-12-01 | Information recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63140435A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103451689A (en) * | 2012-06-01 | 2013-12-18 | 日立电线株式会社 | Copper-based material and method for producing the same |
-
1986
- 1986-12-01 JP JP61286299A patent/JPS63140435A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103451689A (en) * | 2012-06-01 | 2013-12-18 | 日立电线株式会社 | Copper-based material and method for producing the same |
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